899 results on '"Makita Y"'
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202. Residual ion damage in GaAs:C prepared by combined ion beam and molecular beam epitaxy
203. Optical characterization of low-energy nitrogen-ion doped GaAs
204. In-plane photoconductivity of InAs/GaAs strained-layer structures prepared on variously oriented GaAs substrates
205. High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN
206. Ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGe~xC~y layers fabricated by Ge and C ion implantation [Nucl. Instr. and Meth. B 106 (1995) 289]
207. Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy
208. Ion-beam-induced epitaxial crystallisation of metastable Si~1~-~x~-~yGe~xC~y layers fabricated by Ge and C ion implantation
209. Novel optical features in Cd^+ ion-implanted LEC-grown GaAs
210. Modulation of noradrenergic transmission in the guinea‐pig mesenteric artery: an electrophysiological study.
211. The presynaptic regulation of noradrenaline release differs in mesenteric arteries of the rabbit and guinea‐pig.
212. Dielectric relaxation of NH4Al(SO4)2 · 12H2O
213. L1CAM mutation in a Japanese family with X-linked hydrocephalus: a study for genetic counseling
214. Photoluminescence studies of epitaxial Si~1~-~xGe~x and Si~1~-~x~-~yGe~xC~y layers on Si formed by ion beam synthesis
215. Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method
216. Expression of Cysteine Proteinases and Their Inhibitor, Cystatin , in Cultured Rat Mesangial Cells
217. Low-energy nitrogen-ion doping into GaAs and its optical properties
218. Formation of polycrystalline -FeSi~2 layers by ion-implantation and their optical properties
219. Characterization of molecular beam epitaxy grown CuInSe 2 on GaAs(001)
220. Heteroepitaxy and characterization of CuInSe 2 on GaAs(001)
221. Structural and optical characterization of -FeSi~2 layers on Si formed by ion beam synthesis
222. Electrochemical Intercalation of Alkali-Metal Ions into Birnessite-Type Manganese Oxide in Aqueous Solution
223. ChemInform Abstract: The Chemistry of Indoles. Part 43. A Convenient Synthetic Method for 4-Nitro-1,3,4,5-tetrahydrobenz(cd)indoles and its Application for an Alternative Synthesis of (.+-.)-6,7-Secoagroclavine.
224. Successful treatment of massive hemorrhage after percutaneous renal biopsy with transcatheter arterial embolization.
225. Structure of monoclinic rubidium dideuteriumphosphate, RbD2PO4, in the intermediate phase.
226. Magnetic property and electronic structure of b-FeSi2
227. NEW LUMINESCENCE BANDS IN HEAVILY BE-DOPED AND LOW-COMPENSATED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
228. Properties of CuInSe2epitaxial films grown on Pseudo lattice-matched substrates grown by molecular beam epitaxy
229. NEW LUMINESCENCE BANDS IN HEAVILY BE-DOPED AND LOW-COMPENSATED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
230. INSITU SUBPLANTATION OF LOW-ENERGY (similar to 100 EV) C+ INTO GAAS USING COMBINED ION BEAM AND MOLECULAR BEAM EPITAXY
231. Letter of intent for a study of CP violation in B meson decays
232. Optical and electrical properties of heavily carbon-doped GaAs fabricated by high-energy ion-implantation
233. LOW-TEMPERATURE PHOTOLUMINESCENCE FROM GAAS IMPINGED BY MASS-SEPARATED LOW-ENERGY C+ ION-BEAMS DURING MOLECULAR-BEAM EPITAXY
234. Growth of Ge1-xCxalloys on Si by combined low-energy ion beam and molecular beam epitaxy method
235. Structural characterization of MBE grown CuInSe2epitaxial layers
236. NANO-STRUCTURE GE FORMED IN THIN-FILM SIO2 USING ION-IMPLANTATION
237. Optical characteristics of CuInSe2 grown by molecular beam epitaxy
238. A WD-repeat-containing putative regulatory protein in anthocyanin biosynthesis in Perilla frutescens
239. DAMAGE-FREE ION-BEAM DOPING OF CARBON DURING MOLECULAR-BEAM EPITAXY OF GAAS
240. Optical characterization of CulnSe2 grown by molecular beam epitaxy
241. Synergistic effect of chlorpromazine and alkanals on the human red blood cells
242. FORMATION OF SHALLOW ENERGY-LEVELS IN MN+ IMPLANTED GAAS WITH EXTREMELY LOW-BACKGROUND IMPURITY CONCENTRATION
243. Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method
244. Polyhedral-faced GRIN rod lens as a microoptics component
245. Mechanisms of vasodilation induced by vasoactive intestinal polypeptide in rabbit mesenteric artery
246. Possibility of light-pulse generation from junction lasers by the external magnetic field
247. Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy
248. ChemInform Abstract: The Chemistry of Indoles. Part 35. Boronation-Thallation, a New Approach to the Synthesis of Indoles Having Aryl and/or a Heteroaryl Substituent at the 4-Position.
249. Development of an automatic electron diffraction pattern analyzing system
250. ChemInform Abstract: Total Syntheses of (.+-.)-Agroclavine-I (I), (.+-.)-6-Nor-chanoclavine-II (IIa), and (.+-.)-Chanoclavine-II (IIb).
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