Search

Your search keyword '"Liu Jinbiao"' showing total 583 results
Start Over Author "Liu Jinbiao"
583 results on '"Liu Jinbiao"'

204. FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

Author

Zhang, Qingzhu, primary, Yin, Huaxiang, additional, Luo, Jun, additional, Yang, Hong, additional, Meng, Lingkuan, additional, Li, Yudong, additional, Wu, Zhenhua, additional, Zhang, Yanbo, additional, Zhang, Yongkui, additional, Qin, Changliang, additional, Li, Junjie, additional, Gao, Jianfeng, additional, Wang, Guilei, additional, Xiong, Wenjuan, additional, Xiang, Jinjuan, additional, Zhou, Zhangyu, additional, Mao, Shujian, additional, Xu, Gaobo, additional, Liu, Jinbiao, additional, Qu, Yang, additional, Yang, Tao, additional, Li, Junfeng, additional, Xu, Qiuxia, additional, Yan, Jiang, additional, Zhu, Huilong, additional, Zhao, Chao, additional, and Ye, Tianchun, additional

Published
2016
Full Text
View/download PDF

206. Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Author

Duan, Ningyuan, Luo, Jun, Wang, Guilei, Liu, Jinbiao, Simoen, Eddy, Mao, Shujuan, Radamson, Henry, Wang, Xiaolei, Li, Junfeng, Wang, Wenwu, Zhao, Chao, Ye, Tianchun, Duan, Ningyuan, Luo, Jun, Wang, Guilei, Liu, Jinbiao, Simoen, Eddy, Mao, Shujuan, Radamson, Henry, Wang, Xiaolei, Li, Junfeng, Wang, Wenwu, Zhao, Chao, and Ye, Tianchun

Abstract

This brief explores the specific contact resistivity (rho(c)) of NiGe/n- and p-Ge contacts with and without carbon pregermanidation implantation. It is found that in the presence of carbon, not only the thermal stability of NiGe films is improved, but also the rho(c) of the NiGe/n- and p-Ge contacts is reduced remarkably due to enhanced phosphorus (P) and boron (B) dopant segregation (DS) at the NiGe/Ge interface after nickel germanidation. At 500 degrees C germanidation temperature, the.c values are reduced from 1.1 x 10(-4) Omega-cm(2) and 2.9 x 10(-5) Omega-cm(2) for NiGe/n- and p-Ge contacts without carbon to 7.3 x 10(-5) Omega-cm(2) and 1.4 x 10(-5) Omega-cm(2) for their counterparts with carbon, respectively., QC 20170116

Published
2016
Full Text
View/download PDF

207. Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Author

Duan, Ningyuan, primary, Luo, Jun, additional, Wang, Guilei, additional, Liu, Jinbiao, additional, Simoen, Eddy, additional, Mao, Shujuan, additional, Radamson, Henry, additional, Wang, Xiaolei, additional, Li, Junfeng, additional, Wang, Wenwu, additional, Zhao, Chao, additional, and Ye, Tianchun, additional

Published
2016
Full Text
View/download PDF

210. (Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping

Author

Luo, Jun, primary, Liu, Jinbiao, additional, Simoen, Eddy, additional, Wang, Guilei, additional, Mao, Shujuan, additional, Radamson, Henry H, additional, Duan, Ningyuan, additional, Li, Junfeng, additional, Wang, Wenwu, additional, Chen, Dapeng, additional, Zhao, Chao, additional, and Ye, Tianchun, additional

Published
2016
Full Text
View/download PDF

211. Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs

Author

Wang, Guilei, primary, Luo, Jun, additional, Qin, Changliang, additional, Cui, Hushan, additional, Liu, Jinbiao, additional, Jia, Kunpeng, additional, Li, Junjie, additional, Yang, Tao, additional, Li, Junfeng, additional, Yin, Huaxiang, additional, Zhao, Chao, additional, Ye, Tianchun, additional, Yang, Ping, additional, Jayakumar, Ganesh, additional, and Radamson, Henry H, additional

Published
2016
Full Text
View/download PDF

219. Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications

Author

Xu, Qiuxia, primary, Xu, Gaobo, additional, Zhou, Huajie, additional, Zhu, Huilong, additional, Liang, Qingqing, additional, Liu, Jinbiao, additional, Li, Junfeng, additional, Xiang, Jinjuan, additional, Xu, Miao, additional, Zhong, Jian, additional, Xu, Weijia, additional, Zhao, Chao, additional, Chen, Dapeng, additional, and Ye, Tianchun, additional

Published
2015
Full Text
View/download PDF

220. Research on the Construction and Application of the Knowledge Integration Model of Ontology-Based Intelligence Study

Author

Wang Shuo, Gong Zhiping, Liu Jinbiao, and Yang Xiaosong

Subjects
Knowledge management, Commonsense knowledge, Knowledge integration, Computer science, business.industry, Process ontology, Ontology-based data integration, Open Knowledge Base Connectivity, Suggested Upper Merged Ontology, Upper ontology, Ontology (information science), business, Data science
Abstract

To explore knowledge integration of Ontology-based Intelligence Study with the support of Ontology technology, and propose a model of Ontology-based knowledge integration, taking field-oriented intelligence study and task-oriented intelligence study for example, and try to make out an application plan of model of Ontology-based knowledge integration.

Published
2011

221. Double-Balanced Graphene Integrated Mixer with Outstanding Linearity

Author

Lyu, Hongming, primary, Wu, Huaqiang, additional, Liu, Jinbiao, additional, Lu, Qi, additional, Zhang, Jinyu, additional, Wu, Xiaoming, additional, Li, Junfeng, additional, Ma, Teng, additional, Niu, Jiebin, additional, Ren, Wencai, additional, Cheng, Huiming, additional, Yu, Zhiping, additional, and Qian, He, additional

Published
2015
Full Text
View/download PDF

224. Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

Author

Zhang, Yanbo, primary, Zhu, Huilong, additional, Wu, Hao, additional, Zhang, Yongkui, additional, Zhao, Zhiguo, additional, Zhong, Jian, additional, Yang, Hong, additional, Liang, Qingqing, additional, Wang, Dahai, additional, Li, Junfeng, additional, Jia, Cheng, additional, Liu, Jinbiao, additional, Zhao, Yuyin, additional, Li, Chunlong, additional, Meng, Lingkuan, additional, Hong, Peizhen, additional, Li, Junjie, additional, Xu, Qiang, additional, Gao, Jianfeng, additional, He, Xiaobin, additional, Lu, Yihong, additional, Zhang, Yue, additional, Yang, Tao, additional, Wang, Yao, additional, Cui, Hushan, additional, Zhao, Chao, additional, Yin, Huaxiang, additional, Zhong, Huicai, additional, Yin, Haizhou, additional, Yan, Jiang, additional, Wang, Wenwu, additional, Chen, Dapeng, additional, Yu, Hongyu, additional, Yang, Simon, additional, and Ye, Tianchun, additional

Published
2015
Full Text
View/download PDF

228. Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.

Author

Wang, Guilei, Luo, Jun, Qin, Changliang, Liang, Renrong, Xu, Yefeng, Liu, Jinbiao, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Xu, Jun, Zhao, Chao, Radamson, Henry, and Ye, Tianchun

Subjects
EPITAXY, TRANSISTORS, METAL oxide semiconductor field-effect transistors, INTEGRATED circuits, X-ray diffraction
Abstract

In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective SiGe growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1-3 × 10 cm was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-resolution x-ray diffraction (HRXRD) and energy dispersive spectrometer (EDS) measurement data provided the key information about Ge profile in the transistor structure. The induced strain by SiGe layers was directly measured by x-ray on the array of transistors. In these measurements, the boron concentration was determined from the strain compensation of intrinsic and boron-doped SiGe layers. Finally, the characteristic of transistors were measured and discussed showing good device performance. [ABSTRACT FROM AUTHOR]

Published
2017
Full Text
View/download PDF

229. Ultra-short bilayer graphene optical fiber intensity modulator based on silver-semicircular hybrid plasmonic waveguide.

Author

Wang, Hexuan, Liu, Jinbiao, Wu, Ziyong, Teng, Chuanxin, Deng, Shijie, Chen, Ming, and Cheng, Yu

Subjects
*OPTICAL fibers, *OPTICAL fiber communication, *OPTICAL communications, *GRAPHENE, *PLASMONICS, *POLARITONS, *FIBERS, *PHASE change materials
Abstract

The intensity modulator is a key component in optical fiber communication. In this paper, an ultra-short graphene light intensity modulator based on hybrid plasmonic waveguide (HPW) array is proposed. Al 2 O 3 embedded with double-layer graphene at a certain interval is placed on the side polishing surface of the microfiber Mach–Zehnder modulator (MZM), and the silver-semicircular array is placed on the surface of the transition material as hybrid plasmonic waveguide for the first time in all-fiber modulator. Analyzing by building a 3D model in finite difference time domain software, the hybrid surface plasmon polariton (HSPP) between silver-semicircles significantly enhances the subwavelength confinement and the light–graphene interaction. The modulation range of the real part of effective refractive index (N eff) can reach to 0.01984 by adjusting the Fermi level of graphene. Therefore, π phase change can be achieved only in a modulation length of 45 μ m , and the insert loss can be controlled below 0.0159 dB/ μ m through the analysis of the imaginary part of the N eff , which also leads to a low total loss of 0.7155 dB. Owing to the excellent phase modulation efficiency, high extinction ratios of 39.39 dB and 47.77 dB can be reached for port 1 and port 2, respectively. Double-layer graphene forms the flat capacitor, which brings high modulation efficiency while achieving a high modulation bandwidth of 59.945 GHz. The application of HPW in graphene optical fiber modulator greatly improves the working efficiency, reduces the difficulty of integration, overcomes high insert loss, improves the extinction ratio, this modulator can be widely used in the future optical fiber communication system. • An ultra-short bilayer graphene twin-core modulator based on hybrid plasmonic waveguide (HPW) array is proposed to achieve light intensity modulation by adjusting the phase of the light transmitted in fiber core. • The effect of the geometrical parameters and shape of HPW on the intensity of the excited hybrid surface plasmon polariton and on the performance of the modulator has been investigated. • The proposed modulator can achieve an intensity modulation range of over 99% at both ports, with extinction ratios of 39.39 dB and 47.77 dB at port 1 and port 2 respectively. • The bandwidth of proposed modulator is 59.945 GHz while the insert loss is lower than 0.0159 dB/ μ m, and the energy consumption is only 29.43 pJ/bit. [ABSTRACT FROM AUTHOR]

Published
2023
Full Text
View/download PDF

232. Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

Author

Zhao, Lichuan, primary, Tang, Zhaoyun, additional, Tang, Bo, additional, Ma, Xueli, additional, Liu, Jinbiao, additional, Xiang, Jinjuan, additional, Gao, Jianfeng, additional, Li, Chunlong, additional, He, Xiaobin, additional, Jia, Cheng, additional, Ding, Mingzheng, additional, Yang, Hong, additional, Xu, Yefeng, additional, Xu, Jing, additional, Wang, Hongli, additional, Liu, Peng, additional, Hong, Peizhen, additional, Meng, Lingkuan, additional, Li, Tingting, additional, Xiong, Wenjuan, additional, Wu, Hao, additional, Li, Junjie, additional, Wang, Guilei, additional, Yang, Tao, additional, Cui, Hushan, additional, Lu, Yihong, additional, Tong, Xiaodong, additional, Luo, Jun, additional, Zhong, Jian, additional, Xu, Qiang, additional, Wang, Wenwu, additional, Li, Junfeng, additional, Zhu, Huilong, additional, Zhao, Chao, additional, Yan, Jiang, additional, Chen, Dapeng, additional, Yang, Simon, additional, and Ye, Tianchun, additional

Published
2014
Full Text
View/download PDF

235. Study of Si Green Transistor with an Ultra-Shallow Pocket Junction

Author

Xu, Gaobo, primary, Xu, Qiuxia, additional, Yin, Huaxiang, additional, Zhou, Huajie, additional, Wang, Guilei, additional, Li, Chunlong, additional, Liu, Jinbiao, additional, Li, Junjie, additional, Xiong, Wenjuan, additional, Wang, Dahai, additional, Li, Junfeng, additional, and Zhao, Chao, additional

Published
2014
Full Text
View/download PDF

238. First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions

Author

Zhang, Yongkui, Li, Yangyang, Zhu, Huilong, Wang, Qi, Du, Yong, Lu, Shunshun, Li, Junjie, Kong, Zhenzhen, He, Xiaobin, Liu, Jinbiao, Li, Chen, Huang, Weixing, Xie, Lu, Xiao, Zhongrui, Xu, Gaobo, Wang, Guilei, Zhao, Chao, and Luo, Jun

Abstract

A new type of vertical sandwich gate-all around tunneling field-effect-transistors (TFETs), called VSATFETs, was demonstrated firstly with a CMOS-compatible process. The VSATFETs with self-aligned high-κ metal gates (HKMG) and abrupt doping tunneling junctions were fabricated with the epitaxial of p+−Si/i-SiGe/n+−Si sandwich structure and an isotropic quasi-atomic layer-etch (qALE) process. VSATFETs have the advantage of excellent control of channel size, because its gate-length is mainly determined by the thickness of SiGe film grown by epitaxy, and the diameter of the nanowires (NWs)/thickness of nanosheets (NSs) is determined by the qALE etching of SiGe selective to Si. A NW VSATFET with a diameter of 18 nm was fabricated and exhibits excellent characteristics: SSmin= 61.64 mV dec−1, Ion= 2.25 × 10−7A u−1m−1(@Vgs−Vt= 0.45 V, Vd= 0.65 V), Ion/Ioff= 1.81 × 106, DIBL = 7.58 mV. The effect of interface traps on the device performance was analyzed by the calibrated model. It is found that the device performance can be improved by decreasing the thickness/diameter of NS/NW TFET.

Published
2023
Full Text
View/download PDF

239. Polarization-insensitive broadband tunable VO2-based excellent absorber.

Author

Wang, Xiangyang, Wu, Ziyong, Liu, Jinbiao, Chen, Ming, Zhao, Wanli, Li, Renjie, Han, Wenhao, Shi, Xinyu, and Cheng, Yu

Subjects
IMPEDANCE matching, AMPLITUDE modulation, ROTATIONAL symmetry, VANADIUM dioxide, ELECTROMAGNETIC waves
Abstract

We propose a polarization-insensitive broadband tunable metamaterial-based perfect absorber with high absorption. This absorber is composed of three layers of structure, a gold substrate at the bottom, the first polyethylene cyclic olefin copolymer (Topas) dielectric and vanadium dioxide (VO2) as the top layer. Our theoretical results led us to show that this absorber has more than 90% absorption at 3.42 to 7.22 THz with a continuous bandwidth of 3.8 THz, whereas more than 99% absorption in the range of 3.98 to 6.68 THz with a continuous bandwidth of up to 2.7 THz in the case of vertical incidence of electromagnetic waves. In addition, near-perfect amplitude modulation can be achieved by varying the conductivity of the VO2 where the absorbance can be continuously tuned from 1.7% to 100%. It is concluded that the performance of our reported absorber is significantly improved compared to that of previously reported VO2 absorbers. Moreover, perfect absorption and resonant frequency drift can be explained with impedance matching and propagation phase theories, respectively. In addition, our absorber has polarization insensitivity as well as wide-angle absorption due to the presence of rotational symmetry in the absorber structure. Finally, we believe that the absorber proposed is strongly competitive in the terahertz (THz) range for designing THz modulators, cloaking, optic-electro switches, and photodetector. [ABSTRACT FROM AUTHOR]

Published
2022
Full Text
View/download PDF

242. Formation of Highly-Activated N-Type Shallow Junction in Germanium Using Nanosecond Laser Annealing and Fluorine Co-Doping

Author

Liu, Jinbiao, Xu, Jing, Cui, Hengwei, Sun, Xianglie, Mao, Shujuan, Miao, Yuanhao, Yu, Jiahan, Han, Jianghao, Kong, ZhenZhen, Yang, Tao, Li, Junfeng, and Luo, Jun

Abstract

By employing a 355-nm nanosecond (ns) ultraviolet (UV) laser annealing, the impact of fluorine (F) co-doping on the formation of a highly activated N-type shallow junction in germanium (Ge) is investigated. Secondary ion mass spectrometry (SIMS) depth profiling of phosphorus (P) demonstrated that an ultra high P concentration of 9 × 1020cm−3at a shallow junction of 55 nm with less dopant diffusion can be obtained using ns laser annealing. F co-doping was confirmed to be an efficient way to improve the activation of the P dopants, but show less influence on the redistribution of P dopants within the NLA melted region. However, the activation level of the shallow junction could be increased to approximately 1 × 1020cm−3in the presence of F at an optimized concentration.

Published
2023
Full Text
View/download PDF

250. Antimony-meditated efficient conversion of carbohydrates to 5-hydroxymethylfurfural in a simple THF-H2O binary solvent.

Author

Tong, Xinli, Yu, Linhao, Nie, Guangxia, Li, Zongmao, Liu, Jinbiao, and Xue, Song

Subjects
CARBOHYDRATES, ANTIMONY chlorides, HYDROXYMETHYLFURFURAL, METAL chlorides, CHEMICAL amplification, XYLOSE
Abstract

The renewable furan-based platform chemical, 5-hydromethylfurfural (HMF), was effectively produced from hexoses in a THF-H2O biphasic solvent. For the dehydration of fructose, antimony chloride (SbCl3) is first found to be more efficient than other metal chlorides in the THF-H2O medium. As a result, it is found that 84.0% of yield of HMF was obtained with SbCl3-LiBr catalytic system at 120°C for 1.5 h. In addition, the effects of reaction temperature, the additive and the used catalyst amount have been investigated and the suitable reaction conditions were achieved. Furthermore, the catalytic dehydration of various carbohydrates was studied and the promising results were obtained. © 2015 American Institute of Chemical Engineers Environ Prog, 34: 1136-1141, 2015 [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results