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Controlled-release nitrogen fertilizer (CRNF) has been proven to surpass common urea by mitigating nutrient losses, enhancing soil quality, and improving crop productivity. However, the long-term effects of CRNF on soil biological properties are not well understood. Here, a 12-year field experiment was conducted with five treatments: no N fertilizer (PK); the split application of urea at the farmer's practice rate (FP) and the optimal rate (OPT); the one-time application of CRNF at the same rate as the OPT (CRNF); and a 20% reduced rate of the OPT (0.8CRNF). Soil samples were collected during the maize tasseling and filling stages; high-throughput sequencing and the PICRUSt2 method were employed to determine the bacterial community and its functional potential. The results showed that CRNF significantly increased alkaline hydrolysis N by 14.10% and 9.45% compared to OPT during the tasseling and filling stages, respectively. This increase in soil available N resulted in a significant increase in bacterial diversity of 2.09% and 2.35% compared with the FP and OPT, respectively. The bacterial community in the FP and OPT changed markedly between the tasseling and filling stages, with many bacterial species at the ASV and genus levels showing variations in relative abundance. In contrast, CRNF and 0.8CRNF exhibited stable N-cycling functions, as indicated by the lower variations in nitrate reductase and predicted N-cycling functional genes between the tasseling and filling stages. The obtained results suggest that CRNF application can enhance soil N supply, promote the formation of stable bacterial communities, and maintain stable N-cycling functions. [ABSTRACT FROM AUTHOR]

The γ-rays are widely and abundantly present in strong nuclear radiation environments, and when they act on the camera equipment used to obtain environmental visual information on nuclear robots, radiation effects will occur, which will degrade the performance of the camera system, reduce the imaging quality, and even cause catastrophic consequences. Color reducibility is an important index for evaluating the imaging quality of color camera, but its degradation mechanism in a nuclear radiation environment is still unclear. In this paper, the γ-ray irradiation experiments of CMOS cameras were carried out to analyse the degradation law of the camera’s color reducibility with cumulative irradiation and reveal the degradation mechanism of the color information of the CMOS camera under γ-ray irradiation. The results show that the spectral response of CMOS image sensor (CIS) and the spectral transmittance of lens after irradiation affect the values of a* and b* in the LAB color model. While the full well capacity (FWC) of CIS and transmittance of lens affect the value of L* in the LAB color model, thus increase color difference and reduce brightness, the combined effect of color difference and brightness degradation will reduce the color reducibility of CMOS cameras. Therefore, the degradation of the color information of the CMOS camera after γ-ray irradiation mainly comes from the changes in the FWC and spectral response of CIS, and the spectral transmittance of lens. [ABSTRACT FROM AUTHOR]

The application of SiC power devices in the space radiation environment not only requires good resistance to Single Event Effect (SEE) but also requires certain resistance to Total Ionizing Dose (TID) and long-term reliability. Increasing the thickness of the gate oxide layer (tox) can effectively improve the ability of SiC VDMOS to resist SEE. However, it will mainly impact its resistance to TID and Gate Oxide Integrity (GOI). Therefore, this paper compares the influence of tox on the radiation resistance and long-term reliability of SiC VDMOS under the same process and irradiation conditions. The experimental results show that after being irradiated by Cobalt-60 γ-rays, the static parameters of SiC VDMOS devices degrade severely with the increase of the tox; at the same time, the thick gate oxide process will also cause more defects in the gate oxide, leading to the decrease of the gate oxide long-term reliability, but it can be significantly improved after high temperature (HT) accelerated annealing. The research results suggest that the method of increasing tox should take into account the requirements of TID resistance and long-term reliability when improving the SEE radiation resistance of SiC VDMOS. This study is based on the improvement of electrical parameters and the analysis of reliability degradation of SiC VDMOS, providing experimental data support for determining the balance point of tox. [ABSTRACT FROM AUTHOR]

Three-dimensional porous carbon materials with moderate heteroatom-doping have been extensively investigated as promising electrode materials for energy storage. In this study, we fabricated a 3D cross-linked chitosan-dicyandiamide-VOSO4 hydrogel using a polymerization process. After pyrolysis at high temperature, 3D porous VOx/N-doped carbon nanosheet hybrids (3D VNCN) were obtained. The unique 3D porous skeleton, abundant doping elements, and presence of VOx 3D VNCN pyrolyzed at 800 °C (3D VNCN-800) ensured excellent electrochemical performance. The 3D VNCN-800 electrode exhibits a maximum specific capacitance of 408.1 F·g−1 at 1 A·g−1 current density and an admirable cycling stability with 96.8% capacitance retention after 5000 cycles. Moreover, an assembled symmetrical supercapacitor based on the 3D VNCN-800 electrode delivers a maximum energy density of 15.6 Wh·Kg−1 at a power density of 600 W·Kg−1. Our study demonstrates a potential guideline for the fabrication of porous carbon materials with 3D structure and abundant heteroatom-doping. [ABSTRACT FROM AUTHOR]