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1,069 results on '"Li, Xifeng"'

203. One Step Forward to Electrically Assisted Forming Mechanisms and Computer Simulation: A Review.

Author

Izadpanah, Sajjad, Cao, Xudong, An, Dayong, Li, Xifeng, and Chen, Jun

Subjects
COMPUTER simulation, ELECTRIC heating, ELECTRIC windings, ELECTRIC currents, SIMULATION methods & models
Abstract

The electrically assisted forming (EAF) is a hybrid manufacturing process that utilizes electric current energy to improve the productivity and efficiency of the forming process. Many studies have been accomplished to investigate the effect of process parameters on its forming abilities, including pulse current effect, grain size, and current duration. There is currently a lack of agreement on the underlying mechanisms of the electroplastic effect to the formability of metallic materials through EAF, specifically on the Joule heating and electric wind's contributions. One promising solution to this dilemma is the application of computer simulation techniques for a better understanding of the physics of EAF. Therefore, this paper provides a brief review of the previous research studying the modeling of EAF and offers new solutions aiming to further the understanding of the underlying physics of this process through computer simulation approaches. [ABSTRACT FROM AUTHOR]

Published
2023
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207. Ultrahigh‐Performance Optoelectronic Skin Based on Intrinsically Stretchable Perovskite‐Polymer Heterojunction Transistors

Author

Liu, Kai, primary, Bian, Yangshuang, additional, Kuang, Junhua, additional, Huang, Xin, additional, Li, Yi, additional, Shi, Wei, additional, Zhu, Zhiheng, additional, Liu, Guocai, additional, Qin, Mingcong, additional, Zhao, Zhiyuan, additional, Li, Xifeng, additional, Guo, Yunlong, additional, and Liu, Yunqi, additional

Published
2021
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212. Bulk preparation of transparent IGZO TFTs with CS gate dielectric as glucose sensor on a pilot line

Author

Wenya Jiang, Yanyu Yuan, Shibo Yang, Li Xifeng, and Cong Peng

Subjects
Indium gallium zinc oxide, Materials science, biology, business.industry, Subthreshold conduction, Gate dielectric, Transistor, Substrate (electronics), Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, law, biology.protein, Optoelectronics, Glucose oxidase, Electrical and Electronic Engineering, Photolithography, business, Biosensor
Abstract

In this paper, the indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with chitosan (CS) gate dielectric are prepared by the conventional photolithography technique on a pilot line. As-prepared devices on 200 × 200 mm substrate is very uniform, and have good performance of high on/off drain current ratio ~ 10−6, low subthreshold swing ~ 0.24, low-threshold voltage ~ 0.20 V and high-visible light transmittance > 90%. The glucose oxidase is drop-cased on the CS gate dielectric surfaces to make fully transparent CS-based IGZO TFTs with sensitivity to glucose. It is found that the current noticeably changes with increasing glucose concentrations. Herein, the glucose detection range from 0.5 to 30 mM covers the normal range of human blood glucose concentration. Moreover, the response time for glucose sensing is < 10 s, which is effective in detecting glucose. The results suggest that the CS-based IGZO TFTs can be used to detect glucose and provides a simple process to achieve low-cost- and larger-area fabrication of biosensors.

Published
2019
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231. Multiple Nyström Kernel Adaptive Filter Under Minimum Generalized Cauchy Loss Criterion

Author

Tang, Shenjie, Wang, Haojie, Li, Xifeng, Bi, Dongjie, Peng, Libiao, Li, Zhenggui, and Xie, Yongle

Abstract

The multikernel adaptive filters (MKAFs) have been successfully applied to resolve the issue of kernel parameter selection in traditional single kernel adaptive filters. However, owing to the linear growing network structures, conventional MKAFs commonly suffer a lot from large computational and memory burdens. To solve this problem, a multiple Nyström approximation is proposed to curb the computational complexity of MKAFs in this brief. More concretely, the multiple Nyström method is incorporated into the kernel generalized Cauchy conjugate gradient algorithm, generating a novel multiple Nyström kernel generalized Cauchy conjugate gradient algorithm (MNKGCCG). It is noted that the MNKGCCG can achieve the desirable filtering performance with low computational cost in the fixed-dimensional feature space. Experimental results on Mackey-Glass time series and sunspots time series predictions in non-Gaussian noise environments demonstrate the superiorities of the proposed MNKGCCG algorithm in terms of filtering accuracy and robustness.

Published
2023
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232. Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF4 Plasma Treatment

Author

Wang, Chen, Peng, Cong, Wen, Pan, Xu, Meng, Chen, Longlong, Li, Xifeng, and Zhang, Jianhua

Abstract

The performance of back channel etching (BCE) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was improved using a carbon tetrafluoride (CF $_{{4}}{)}$ plasma treatment of the back channel (BC) after the wet-etching process of source–drain (SD) electrodes. X-ray photoelectron spectroscopy (XPS) analysis showed that the wet-etching of $\text{H}_{{2}}\text{O}_{{2}}$ -based etchant may result in Mo-related residue, which deteriorate a-IGZO BC. In comparison with as-etching indium gallium zinc oxide (IGZO) TFT, the saturation field effect mobility increases from 7.8 to 16.4 cm2/Vs, subthreshold swing (SS) decreases from 0.82 to 0.34 V/decade, the ratio of on current and off current improves from $7.3\times 10^{{5}}$ to $1.1\times 10^{{10}}$ , and the threshold voltage shift of negative bias illumination stability (NBIS) improves from −3.4 to −0.6 V. The fact confirmed that CF4 plasma treatment of the BC can effectively reduce BC defects and improve the electrical characteristics of BCE IGZO TFT comprehensively.

Published
2023
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233. 1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability.

Author

Yan, Guowen, Wang, Dejian, Sun, Xiaoqi, Wen, Pan, Peng, Cong, Xu, Lin, Ding, Lidong, Chen, Fa-Hsyang, Li, Xifeng, Xi, Wangfeng, Xing, Rubo, and Li, Junfeng

Subjects
THIN film transistors, TRANSISTORS, SEMICONDUCTORS, OXIDE coating, OXIDES
Abstract

This paper presents a oxide thin film transistors with high mobility by a new fabricate method. The high mobility TFT with ultra‐high mobility of 55cm2/Vs has been obtained, and the PBTS and NBTS has also been optimized. [ABSTRACT FROM AUTHOR]

Published
2024
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241. Resolvin D1 ameliorates Inflammation-Mediated Blood-Brain Barrier Disruption After Subarachnoid Hemorrhage in rats by Modulating A20 and NLRP3 Inflammasome

Author

Wei, Chengcong, primary, Guo, Shenquan, additional, Liu, Wenchao, additional, Jin, Fa, additional, Wei, Boyang, additional, Fan, Haiyan, additional, Su, Hengxian, additional, Liu, Jiahui, additional, Zhang, Nan, additional, Fang, Dazhao, additional, Li, Guangxu, additional, Shu, Shixing, additional, Li, Xifeng, additional, He, Xuying, additional, Zhang, Xin, additional, and Duan, Chuanzhi, additional

Published
2021
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