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213. Device and reliability improvement of HfSiON+LaOx/metal gate stacks for 22nm node application

217. Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs

219. Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond

230. Setleis syndrome: clinical, molecular and structural studies of the first TWIST2 missense mutation.

231. A cross-sectional multicenter study of osteogenesis imperfecta in North America - results from the linked clinical research centers.

245. Simplified manufacturable band edge metal gate solution for NMOS without a capping layer

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