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We fabricated a single-electron transistor using DNA-assisted assembly of Au nanoparticles. Most devices exhibited clear Coulomb blockade and oscillations. In contrast to conventional single-electron transistors, however, the period of Coulomb oscillations was observed to depend on the temperature. This temperature dependence is probably ascribed to the temperature dependence of gate capacitance. [ABSTRACT FROM PUBLISHER]

We have synthesized mesoporous TiO2 nanofibers loaded with Au nanoparticles (MTNF-Au) and fabricated single nanofiber-based devices. MTNF-Au devices exhibited surface plasmon enhanced photoconductance under visible light, whereas MTNF devices without Au nanoparticles did not. Moreover, Coulomb oscillations were observed at 4.2 K in MTNF-Au devices, indicating that Au nanoparticles embedded in MTNF-Au played a role of Coulomb islands. These results suggested that the enhanced photoconductance was ascribed to electron tunneling of hot electrons generated by the surface plasmon resonance. [ABSTRACT FROM AUTHOR]

We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a SiO2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction. [ABSTRACT FROM AUTHOR]

Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111) substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a <0001> growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated.The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained. [ABSTRACT FROM AUTHOR]