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579 results on '"Kisielowski C"'

203. Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Author

Lubyshev, D., primary, Liu, W. K., additional, Stewart, T. R., additional, Cornfeld, A. B., additional, Fang, X. M., additional, Xu, X., additional, Specht, P., additional, Kisielowski, C., additional, Naidenkova, M., additional, Goorsky, M. S., additional, Whelan, C. S., additional, Hoke, W. E., additional, Marsh, P. F., additional, Mirecki Millunchick, J., additional, and Svensson, S. P., additional

Published
2001
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208. 3D reconstruction of nanocrystalline particles from a single projection.

Author

Chen, F.-R., Kisielowski, C., and Van Dyck, D.

Subjects
*ATOMIC structure, *NANOCRYSTALS, *THREE-dimensional imaging, *THEORY of wave motion, *ATOM lasers, *NOISE measurement, *SIMULATION methods & models
Abstract

This paper describes an approach to retrieve the three-dimensional atomic structure of a nanocrystalline particle from the reconstructed electron exit wave function in a single projection direction. The method employs wave propagation to determine the local exit surface of each atomic column together with its mass. The exit wave in between colums is used as internal calibration so as to remove the background noise and improve the precision to the level of single atom sensitivity. The validity of the approach is tested with exit wave functions of a gold wedge reconstructed from simulated images containing different levels of noise. [ABSTRACT FROM AUTHOR]

Published
2015
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209. Maintaining the genuine structure of 2D materials and catalytic nanoparticles at atomic resolution.

Author

Calderon, H.A., Kisielowski, C., Specht, P., Barton, B., Godinez-Salomon, F., and Solorza-Feria, O.

Subjects
*NANOPARTICLES, *ELECTRON microscopy, *MATERIAL biodegradation, *TWO-dimensional models, *SURFACE structure, *MONOCHROMATORS
Abstract

The recent development of atomic resolution, low dose-rate electron microscopy allows investigating 2D materials as well as catalytic nano particles without compromising their structural integrity. For graphene and a variety of nanoparticle compositions, it is shown that a critical dose rate exists of <100 e − /Å 2 s at 80 keV of electron acceleration that allows maintaining the genuine object structures including their surfaces and edges even if particles are only 3 nm large or smaller. Moreover, it is demonstrated that electron beam-induced phonon excitation from outside the field of view contributes to a contrast degradation in recorded images. These degradation effects can be eliminated by delivering electrons onto the imaged area, only, by using a Nilsonian illumination scheme in combination with a suitable aperture at the electron gun/monochromator assembly. [ABSTRACT FROM AUTHOR]

Published
2015
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210. Instrumental requirements for the detection of electron beam-induced object excitations at the single atom level in high-resolution transmission electron microscopy.

Author

Kisielowski, C., Specht, P., Gygax, S.M., Barton, B., Calderon, H.A., Kang, J.H., and Cieslinski, R.

Subjects
*INSTRUMENTAL analysis, *ELECTRON beams, *TRANSMISSION electron microscopy, *ATOM lasers, *SINGLE molecules, *NANOCRYSTALS
Abstract

This contribution touches on essential requirements for instrument stability and resolution that allows operating advanced electron microscopes at the edge to technological capabilities. They enable the detection of single atoms and their dynamic behavior on a length scale of picometers in real time. It is understood that the observed atom dynamic is intimately linked to the relaxation and thermalization of electron beam-induced sample excitation. Resulting contrast fluctuations are beam current dependent and largely contribute to a contrast mismatch between experiments and theory if not considered. If explored, they open the possibility to study functional behavior of nanocrystals and single molecules at the atomic level in real time. [ABSTRACT FROM AUTHOR]

Published
2015
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219. X-Ray Photoemission Spectromicroscopy Of Gan And AIGan

Author

Lorusso, G. F., primary, Solak, H., additional, Cerrina, F., additional, Underwood, J. H., additional, Batson, P. J., additional, Kim, Y., additional, Cho, Y., additional, Kisielowski, C., additional, Krueger, J., additional, and Weber, E. R., additional

Published
1998
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222. Stress Controlled MBE-growth of GaN:Mg and GaN:Si

Author

Kim, Y., primary, Klockenbrink, R., additional, Kisielowski, C., additional, Krueger, J., additional, Corlatan, D., additional, Sudhir, G. S, additional, Peyrot, Y., additional, Cho, Y., additional, Rubin, M., additional, and Weber, E. R., additional

Published
1997
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225. Strain-related phenomena in GaN thin films

Author

Kisielowski, C., primary, Krüger, J., additional, Ruvimov, S., additional, Suski, T., additional, Ager, J. W., additional, Jones, E., additional, Liliental-Weber, Z., additional, Rubin, M., additional, Weber, E. R., additional, Bremser, M. D., additional, and Davis, R. F., additional

Published
1996
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227. Homoepitaxial growth of GaN using molecular beam epitaxy

Author

Gassmann, A., primary, Suski, T., additional, Newman, N., additional, Kisielowski, C., additional, Jones, E., additional, Weber, E. R., additional, Liliental‐Weber, Z., additional, Rubin, M. D., additional, Helava, H. I., additional, Grzegory, I., additional, Bockowski, M., additional, Jun, J., additional, and Porowski, S., additional

Published
1996
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229. Properties Of Homoepitaxially Mbe-Grown Gan

Author

Suski, T., primary, Krueger, J., additional, Kisielowski, C., additional, Phatak, P., additional, Leung, M. S. H., additional, Liliental-Weber, Z., additional, Gassmann, A., additional, Newman, N., additional, Rubin, M. D., additional, Weber, E. R., additional, Grzegory, I., additional, Jun, J., additional, Bockowski, M., additional, Porowski, S., additional, and Helava, H. I., additional

Published
1996
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232. High resolution composition profiles of multilayers

Author

Baumann, F. H., primary, Gribelyuk, M., additional, Kim, Y., additional, Kisielowski, C., additional, Maurice, J-L., additional, Rau, W.-D., additional, Rentschler, J. A., additional, Schwander, P., additional, and Ourmazd, A., additional

Published
1995
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249. A quantitative procedure to probe for compositional inhomogeneities in In x Ga1− x N alloys

Author

Bartel, T.P. and Kisielowski, C.

Subjects
*GALLIUM nitride, *ALLOYS, *INDIUM, *QUANTITATIVE research, *RADIATION injuries, *IMAGING systems
Abstract

Abstract: The distribution of indium in a GaN/In x Ga1− x N/Al y Ga1− y N quantum well with x±Δx=0.24±0.07 is quantitatively investigated by extraction of displacement fields from lattice images. Simulations accurately describe the measured strain relaxation across a wedge-shaped sample for a sample thickness up to 150nm. The proportionality between indium concentration and resulting lattice constant c(x) is approximated by c(x)=0.5185+0.111x nm. In general, it is challenging to discriminate the effects of random alloying against clustering. In In x Ga1− x N this is particularly true at low indium concentrations x<0.2. For an accurate quantitative analysis, sample preparation and imaging were developed such that radiation damage can be recognized if present. Further, an analysis of detection limits and knowledge of the sample thickness are crucial for obtaining reproducible results. Data averaging is necessary to reach sufficient precision. Consequently, the size of the indium-rich clusters is poorly known if x is small. Beyond the interest in physical properties of In x Ga1− x N alloys, the analysis of strain and its relaxation exemplifies how quantitative analysis is possible at an atomic level and is in excellent agreement with theoretical predictions. [Copyright &y& Elsevier]

Published
2008
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250. Compositional analysis of mixed–cation-anion III–V semiconductor interfaces using phase retrieval high-resolution transmission electron microscopy.

Author

Mahalingam, K., Eyink, K. G., Brown, G. J., Dorsey, D. L., Kisielowski, C. F., and Thust, A.

Subjects
TRANSMISSION electron microscopy, CATIONS, HETEROSTRUCTURES, SUPERLATTICES, CRYSTALS
Abstract

Employing exit-plane wave function (EPWF) reconstruction in high-resolution transmission electron microscopy (HRTEM), we have developed an approach to atomic scale compositional analysis of III-V semiconductor interfaces, especially suitable for analyzing quaternary heterostructures with intermixing in both cation and anion sub-lattices. Specifically, we use the focal-series reconstruction technique, which retrieves the complex-valued EPWF from a thru-focus series of HRTEM images. A study of interfaces in Al0.4Ga0.6As–GaAs and In0.25Ga0.75Sb–InAs heterostructures using focal-series reconstruction shows that change in chemical composition along individual atomic columns across an interface is discernible in the phase image of the reconstructed EPWF. To extract the interface composition profiles along the cation and anion sub-lattices, quantitative analysis of the phase image is performed using factorial analysis of correspondence. This enabled independent quantification of changes in the In–Ga and As–Sb contents across ultra-thin interfacial regions (approximately 0.6 nm wide) with true atomic resolution, in the In0.25Ga0.75Sb–InAs heterostructure. The validity of the method is demonstrated by analyzing simulated HRTEM images of an InAs–GaSb–InAs model structure with abrupt and graded interfaces. Our approach is general, permitting atomic-level compositional analysis of heterostructures with two species per sub-lattice, hitherto unfeasible with existing HRTEM methods. [ABSTRACT FROM AUTHOR]

Published
2008
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