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The purpose of this study was to histologically evaluate newly generated vital bone using porous granules of bioactive and resorbable silica-calcium phosphate nanocomposite (SCPC) in extraction sockets.Six patients with a non-restorable maxillary central incisor requiring extraction followed by implant placement participated in the study. Extraction sockets were grafted with granules of SCPC. After 6 months, a bone core sample was retrieved from the center of the healed socket for histologic analysis, and dental implants were placed. Alveolar bone width was clinically assessed immediately after tooth extraction and 6 months after bone grafting, at the time of implant placement. Alveolar bone height was radiographically assessed immediately after tooth extraction and 6 months after extraction.Histomorphometric analyses of sockets grafted with SCPC for 6 months revealed 46.8% +/- 14% new vital bone and 2.5% +/- 1.5% graft material remnants. In these sockets, the mean bone height resorption over the 6-month period of healing was 1.6 mm +/- 1.5 mm. The mean bone width resorption of 2 mm +/- 0.7 mm was found at the bone crest.The results of this study suggest that SCPC graft material reduces the amount of change in alveolar ridge dimensions after tooth extraction and facilitates the regeneration of new vital bone.

e18102Background: VTE rates in cytoreductive surgery (CRS) for peritoneal metastasis (PM) without prophylaxis are high, 30-50%. Many factors in this population promote VTE events including tumor bu...

A novel silicon-on-insulator technique utilizing the bonding of oxidized silicon wafers has been investigated. The bonding was achieved by heating in an inert atmosphere a pair of wafers with hydrophilic surfaces, which had been contacted face-to-face. A quantitative method for the evaluation of the surface energy of the bond based on crack propagation theory was developed. The bond strength was found to increase with the bonding temperature from about 60-85 erg/cm/sup 2/ at room temperature to approximately=2200 erg/cm/sup 2/ at 1400 degrees C, which is in the same range as the cohesive energy of bulk quartz. The strength was essentially independent of the bond time. Bonds created during a 10 s annealing at 800 degrees C were strong enough to withstand both the thinning of the top wafer to the desired thickness and the subsequent device processing. Three distinct phases of the bonding process were observed. The electrical properties of the bond between the wafers were tested using MOS capacitors. The results were consistent with a negative charge density at the bond interface of approximately 10/sup 11/ cm/sup -2/. A double etch-back procedure was used to thin the device wafer to the desired thickness. The characteristics of the resulting film are described. CMOS devices made in a 0.3- mu m-thick layer had subthreshold slopes of 68 mV/decade (for both n- and p-channel MOS transistors). The effective carrier lifetime was >30 mu s in 300-nm-thick Si films, and the interface state density at the Si-film/buried oxide interface was >

A 28 volt solenoid driver has been realized in partially-depleted SOI CMOS technology. The design features an n-channel high voltage MOSFET with an extended drain and a polysilicon field plate, and an on-board flyback diode, each capable of sinking 0.5 A of current and dissipating about 1 W of DC power. Pulse-width modulation (PWM) control maintains low dynamic power dissipation in the drive FET, while the externally selectable "pull-in and hold" function, which reduces the maximum operating current, helps to minimize the overall chip power. Saturation detection, current sense, and overcurrent fault outputs are provided to assist the system designer. The device was fabricated on SIMOX wafers with 340 nm of Si film using our 1.25 /spl mu/m CMOS SOI process with single level Ti/W interconnects and CoSi/sub 2/ contacts. Our Ti/W metallization, capped with Si/sub 3/N/sub 4/ for corrosion protection, has been evaluated to have a lifetime of /spl sim/16.7 years for 300/spl deg/C operation at 10/sup 6/ A/cm/sup 2/ (a 10% resistance increase was the definition of failure). The output power transistor has been formed with our standard CMOS process. Its gate dimensions were L=2 /spl mu/m and W=48,000 /spl mu/m, with a drain extension of 2.8 /spl mu/m.

Objective: The role of group therapy in treatment of posttraumatic stress disorder (PTSD) has been traditionally restricted to issues of self-esteem and interpersonal relationships, rather than primary symptoms of the disorder. In this study, the authors examined the effectiveness of a 16-week trauma-focused, cognitive-behavioral group therapy, named Interactive Psychoeducational Group Therapy, in reducing primary symptoms of PTSD in five groups (N=29) of multiply traumatized women diagnosed with chronic PTSD. Method: The authors made assessments at baseline, at 1-month intervals during treatment, at termination, and at 6-month follow-up by using self-report and structured interview measures of PTSD and psychiatric symptoms. The absence of a control group limits the conclusions drawn from the study. Results: At termination, subjects showed significant reductions in all three clusters of PTSD symptoms (i.e., reexperiencing, avoidance, and hyperarousal) and in depressive symptoms; they showed near-significant reductions in general psychiatric and dissociative symptoms, at termination. These improvements were sustained at 6-month follow-up. Conclusions: The role of group therapy in PTSD treatment should not be prematurely restricted to addressing self-esteem and interpersonal dimensions only. The use of structured, cognitive-behavioral elements within the group format may allow for more targeted treatment of core symptoms of the disorder.