1,529 results on '"Hommel D"'
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202. Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications
203. Evidence for Two Mg Related Acceptors in GaN
204. Phase diagram and critical behavior of the random ferromagnet Ga1−xMnxN
205. Blue lasing and strong coupling in ZnSe monolithic microcavities
206. Light-matter coupling in ZnTe-based micropillar cavities containing CdTe quantum dots
207. Phonons in strained AlGaN/GaN superlattices
208. Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy
209. Anisotropic strain and phonon deformation potentials in GaN
210. Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy
211. Interfacial structure of a -plane GaN grown on r -plane sapphire
212. Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
213. Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
214. Defect distribution in a-plane GaN on Al2 O3
215. Phonons in strained AlGaN/GaN superlattices
216. Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire
217. Bending in HVPE grown GaN films : origin and reduction possibilities
218. Nonpolar a- and m-plane bulk GaN sliced from boules : structural and optical characteristics
219. Anisotropic strain and phonon deformation potentials in GaN
220. Binding-energy distribution and dephasing of localized biexcitons
221. Syndrome d’hyperinfection à Strongyloides stercoralis avec méningoencéphalite aiguë associée à une co-infection par les virus lymphotropique T humain type 1 et type 2
222. Strain-free low-defect-density bulk GaN with nonpolar orientations
223. High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
224. Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
225. Photoluminescence of a -plane GaN : comparison between MOCVD and HVPE grown layers
226. Optical signatures of dopants in GaN
227. Optical properties of nonpolar a-plane GaN layers
228. The dominant shallow 0.225 eV acceptor in GaN
229. Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
230. Structural defect-related emissions in nonpolar a-plane GaN
231. Microscopic emission properties of nonpolar a-plane GaN grown by HVPE
232. Strain in a-plane GaN layers grown on r-plane sapphire substrates
233. Profiling of light emission of GaN-based laser diodes with cathodoluminescence
234. Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
235. High pressure annealing of HVPE GaN free-standing films : redistribution of defects and stress
236. Optoelectronic devices on bulk GaN
237. Emission properties of a -plane GaN grown by metal-organic chemical-vapor deposition
238. Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities
239. Ga1−xMnxN epitaxial films with high magnetization
240. The French airbridge for circulatory support in the Carribean
241. Strong coupling in monolithic microcavities with ZnSe quantum wells
242. Blue monolithic II-VI-based vertical-cavity surface-emitting laser
243. La pyélonéphrite emphysémateuse : une complication rare des infections des voies urinaires hautes
244. Room temperature single photon emission from an epitaxially grown quantum dot
245. In-depth and in-plane profiling of light emission properties of InGaN-based laser diode
246. Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications : Strain distribution and wafer bending
247. Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers
248. Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
249. Toward Better Light-Confinement in Micropillar Cavities
250. Front Cover: Physics of nitride‐based nanostructured light‐emitting devices (Phys. Status Solidi B 8/2011)
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