423 results on '"Hachtel, Jordan"'
Search Results
202. Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor.
- Author
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Yiling Yu, Volodymyr Turkowski, Hachtel, Jordan A., Puretzky, Alexander A., Ievlev, Anton V., Din, Naseem U., Harris, Sumner B., Iyer, Vasudevan, Rouleau, Christopher M., Rahman, Talat S., Geohegan, David B., and Kai Xiao
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TIME-dependent density functional theory , *TRANSITION metals , *SEMICONDUCTORS , *RENORMALIZATION (Physics) , *ISOTOPES , *CHEMICAL vapor deposition , *MONOMOLECULAR films - Abstract
Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, which can affect both thermal properties and optoelectronic properties of conventional semiconductors. However, how isotopic mass affects the optoelectronic properties in 2D semiconductors remains unclear because of measurement uncertainties resulting from sample heterogeneities. Here, we report an anomalous optical bandgap energy red shift of 13 (±7) milli-electron volts as mass of Mo isotopes is increased in laterally structured 100MoS2-92MoS2 monolayers grown by a two-step chemical vapor deposition that mitigates the effects of heterogeneities. This trend, which is opposite to that observed in conventional semiconductors, is explained by many-body perturbation and time-dependent density functional theories that reveal unusually large exciton binding energy renormalizations exceeding the ground-state renormalization energy due to strong coupling between confined excitons and phonons. The isotope effect on the optical bandgap reported here provides perspective on the important role of exciton-phonon coupling in the physical properties of two-dimensional materials. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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203. Understanding the Surface Chemistry Dependent Plasmon Response in Ti3C2T x MXenes using Monochromated STEM-EELS.
- Author
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Misra, Sudhajit, Hachtel, Jordan A., Boebinger, Matthew G., Muraleedharan, Murali Gopal, Konečná, Andrea, Mathis, Tyler S., Kent, Paul R. C., Naguib, Michael, Gogotsi, Yury, and Unocic, Raymond R.
- Published
- 2022
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204. Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe p MOSFETs.
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Duan, Guo Xing, Hachtel, Jordan A., Zhang, En Xia, Zhang, Cher Xuan, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Mitard, Jerome, Linten, Dimitri, Witters, Liesbeth, Collaert, Nadine, Mocuta, Anda, Thean, Aaron Voon-Yew, Chisholm, Matthew F., and Pantelides, Sokrates T.
- Abstract
We have measured the low-frequency 1/ f noise of Si0.55Ge0.45 p MOSFETs with a Si capping layer and SiO2/HfO2/TiN gate stack as a function of frequency, gate voltage, and temperature (100–440 K). The magnitude of the excess drain voltage noise power spectral density ( \textitS {vd} ) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 layers. At lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device. [ABSTRACT FROM PUBLISHER]
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- 2016
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205. Deformation Mechanisms of Vertically Stacked WS2/MoS2Heterostructures: The Role of Interfaces
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Susarla, Sandhya, Manimunda, Praveena, Morais Jaques, Ygor, Hachtel, Jordan A., Idrobo, Juan Carlos, Syed Amnulla, Syed Asif, Galvão, Douglas Soares, Tiwary, Chandra Sekhar, and Ajayan, Pulickel M.
- Abstract
The mechanical and optical properties generated due to the stacking of different atomically thin materials have made it possible to tune and engineer these materials for next-generation electronics. The understanding of the interlayer interactions in such stacked structures is of fundamental interest for structure and property correlation. Here, a combined approach of in situRaman spectroscopy and mechanical straining along with molecular dynamics (MD) simulations has been used to probe one such interface, namely, the WS2/MoS2heterostructure. Vertical heterostructures on poly(methyl methacrylate), when flexed, showed signs of decoupling at 1.2% strain. Theoretical calculations showed strain-induced stacking changes at 1.75% strain. The sliding characteristics of layers were also investigated using scanning probe microscopy based nanoscratch testing, and the results are further supported by MD simulations. The present study could be used to design future optoelectronic devices based on WS2/MoS2heterostructures.
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- 2018
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206. Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain.
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Wang, Liang, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Duan, Guo Xing, Hachtel, Jordan A., Zhang, Cher Xuan, Reed, Robert A., Samsel, Isaak K., Alles, Michael L., Witters, Liesbeth, Collaert, Nadine, Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, Sokrates T., and Galloway, Kenneth F.
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IONIZING radiation dosage ,ELECTRIC admittance ,IRRADIATION ,STRAY currents - Abstract
The total ionizing dose response of Ge channel pFETs with raised Si0.55Ge0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage. [ABSTRACT FROM PUBLISHER]
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- 2015
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207. Correlating inhomogeneity in anionic electron density with hydrogen incorporation in Y5Si3 electrides.
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Venkatraman, Kartik, Hachtel, Jordan, and Chi, Miaofang
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- 2021
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208. Bias Dependence of Total Ionizing Dose Effects in SiGe-SiO_2/HfO_2\ pMOS FinFETs.
- Author
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Duan, Guo Xing, Zhang, Cher Xuan, Zhang, En Xia, Hachtel, Jordan, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Alles, Michael L., Pantelides, Sokrates T., Bersuker, Gennadi, and Young, Chadwin D.
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HAFNIUM oxide ,DIELECTRICS research ,BAND gaps ,METAL oxide semiconductor field-effect transistor circuits ,TECHNOLOGY ,COMPLEMENTARY metal oxide semiconductors - Abstract
The total ionizing dose (TID) response of double-gate SiGe-SiO_2/HfO_2 \ pMOS FinFET devices is investigated under different device bias conditions. Negative bias irradiation leads to the worst-case degradation due to increased hole trapping in the HfO_2 layer, in contrast to what is typically observed for devices with SiO_2 or HfO_2 gate dielectrics. This occurs in the devices because radiation-induced holes that are generated in the SiO_2 interfacial layer can transport and become trapped in the HfO_2 under negative bias, leading to a more negative threshold voltage shift than observed at 0 V bias. Similarly, radiation-induced electrons that are generated in the SiO_2 interfacial layer can transport into the HfO_2 and become trapped under positive bias, leading to a more positive threshold voltage shift than observed at 0 V bias. [ABSTRACT FROM PUBLISHER]
- Published
- 2014
- Full Text
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209. Vibrational EELS of CaTiO3-SrTiO3 Superlattices versus Layer Thickness.
- Author
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Hoglund, Eric, Hachtel, Jordan, Beechem, Thomas, Hopkins, Patrick, and Howe, James
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- 2020
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210. Front Cover: Metal‐Nitrogen‐Carbon Cluster‐Decorated Titanium Carbide is a Durable and Inexpensive Oxygen Reduction Reaction Electrocatalyst (ChemSusChem 21/2021).
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Beom Cho, Sung, He, Cheng, Sankarasubramanian, Shrihari, Singh Thind, Arashdeep, Parrondo, Javier, Hachtel, Jordan A., Borisevich, Albina Y., Idrobo, Juan‐Carlos, Xie, Jing, Ramani, Vijay, and Mishra, Rohan
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TITANIUM carbide ,CATALYSTS ,PROTON exchange membrane fuel cells ,OXYGEN reduction - Abstract
Front Cover: Metal-Nitrogen-Carbon Cluster-Decorated Titanium Carbide is a Durable and Inexpensive Oxygen Reduction Reaction Electrocatalyst (ChemSusChem 21/2021) Bader charge, electrochemistry, oxidative degradation, oxygen reduction reaction, proton exchange membrane fuel cells Keywords: Bader charge; electrochemistry; oxidative degradation; oxygen reduction reaction; proton exchange membrane fuel cells EN Bader charge electrochemistry oxidative degradation oxygen reduction reaction proton exchange membrane fuel cells 4609 4609 1 11/09/21 20211104 NES 211104 B The Front Cover b shows theory-guided development of a durable, active, and inexpensive electrocatalyst supported for use in automotive fuel cells to facilitate the oxygen reduction reaction. [Extracted from the article]
- Published
- 2021
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211. In situ electron-beam processing and cathodoluminescence microscopy for quantum nanophotonics.
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Geohegan, David B., Kabashin, Andrei V., Dubowski, Jan J., Farsari, Maria, Iyer, Vasudevan, Retterer, Scott T., Fowlkes, Jason, Jesse, Stephen, Puretzky, Alexander A., Hachtel, Jordan A., Rack, Philip D., and Lawrie, Benjamin J.
- Published
- 2021
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212. Elucidating Ion Transport in Lithium-Ion Conductors by Combining Vibrational Spectroscopy in STEM and Neutron Scattering.
- Author
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Chi, Miaofang, Liu, Xiaoming, Hachtel, Jordan, Jalarvo, Niina H., Cheng, Yongqiang, and Sakamoto, Jeff
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- 2019
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213. Towards topological spectroscopy in the electron microscope with atomic resolution.
- Author
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Idrobo, Juan Carlos, Lupini, Andrew R., Lovejoy, Tracy C., Lavrik, Nickolay V., Hachtel, Jordan A., Rusz, Ján, Dellby, Niklas, and Krivanek, Ondrej L.
- Published
- 2019
- Full Text
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214. Vibrational Spectroscopy of Liquid Water by Monochromated Aloof EELS.
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Jokisaari, Jacob R., Hachtel, Jordan, Hu, Xuan, Mukherjee, Arijita, Wang, Canhui, Konecna, Andrea, Aizpurua, Javier, Krivanek, Ondrej L., Idrobo, Juan-Carlos, and Klie, Robert F.
- Published
- 2019
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215. Novel EELS Experiments in the Newly Opened Monochromated Regime.
- Author
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Hachtel, Jordan A., Jokisaari, Jacob R., Klie, Robert F., and Idrobo, Juan Carlos
- Published
- 2019
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216. Atomic-resolution electric field measurements with a universal detector.
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Hachtel, Jordan A., Thind, Arashdeep, Mishra, Rohan, Idrobo, Juan Carlos, and Chi, Miaofang
- Published
- 2019
- Full Text
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217. Atomic-Scale Identification of Planar Defects in Cesium Lead Bromide Perovskite Nanocrystals.
- Author
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Thind, Arashdeep Singh, Luo, Guangfu, Hachtel, Jordan A., Goriacheva, Mariia, Cho, Sung Beom, Borisevich, Albina, Idrobo, Juan Carlos, Xing, Yangchuan, and Mishra, Rohan
- Published
- 2019
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218. Forecasting and modeling of the COVID-19 pandemic in the USA with a timed intervention model.
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Hachtel, Gary D., Stack, John D., and Hachtel, Jordan A.
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COVID-19 pandemic , *STAY-at-home orders , *SOCIAL distancing , *FORECASTING , *SOCIAL norms - Abstract
We propose a novel Timed InterventionS, P, E, I, Q, R, D model for projecting the possible futures of the COVID-19 pandemic in the USA. The proposed model introduces a series of timed interventions that can account for the influence of real time changes in government policy and social norms. We consider three separate types of interventions: (i) Protective interventions: Where population moves from susceptible to protected corresponding to mask mandates, stay-at-home orders and/or social distancing. (ii) Release interventions: Where population moves from protected to susceptible corresponding to social distancing mandates and practices being lifted by policy or pandemic fatigue. (iii) Vaccination interventions: Where population moves from susceptible, protected, and exposed to recovered (meaning immune) corresponding to the mass immunization of the U.S. Population. By treating the pandemic with timed interventions, we are able to model the pandemic extremely effectively, as well as directly predicting the course of the pandemic under differing sets of intervention schedules. We show that without prompt effective protective/vaccination interventions the pandemic will be extended significantly and result in many millions of deaths in the U.S. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
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219. Thermal Stability of Quasi-1D NbS3Nanoribbons and Their Transformation to 2D NbS2: Insights from in SituElectron Microscopy and Spectroscopy
- Author
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Formo, Eric V., Hachtel, Jordan A., Ghafouri, Yassamin, Bloodgood, Matthew A., and Salguero, Tina T.
- Abstract
In situelectron microscopy imaging and spectroscopy enabled us to study the evolution of quasi-1D NbS3-IV nanoribbons with respect to morphology and chemical structure at temperatures between room temperature and 1000 °C. Scanning transmission electron microscopy (STEM) experiments included imaging in the secondary electron, (transmitted) bright field, and high-angle annular dark-field modes while operating in the low kV regime. The results showed that NbS3-IV samples transform dramatically from smooth nanoribbons into highly textured configurations featuring polyhedral divots and steps. Similar in situheating experiments conducted with aberration-corrected STEM revealed that bilayers of NbS3-IV chains convert topotactically into aligned 2H-NbS2sheets upon loss of sulfur. Atomic resolution imaging, fast Fourier transform analysis, and electron energy loss spectroscopy confirmed these chemical changes, from which we propose an atomistic mechanism for the NbS3-IV → 2H-NbS2conversion.
- Published
- 2021
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220. Spatially and spectrally resolved orbital angular momentum interactions in plasmonic vortex generators.
- Author
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Hachtel, Jordan A., Cho, Sang-Yeon, Davidson, Roderick B., Feldman, Matthew A., Chisholm, Matthew F., Haglund, Richard F., Idrobo, Juan Carlos, Pantelides, Sokrates T., and Lawrie, Benjamin J.
- Published
- 2019
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221. Strain‐Induced Structural Deformation Study of 2D MoxW(1‐x) S2.
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Susarla, Sandhya, Manimunda, Praveena, Jaques, Ygor M., Hachtel, Jordan A., Idrobo, Juan C., Asif, S. A. Syed, Galvão, Douglas S., Tiwary, Chandra Sekhar, and Ajayan, Pulickel M.
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TUNGSTEN alloys ,MOLECULAR dynamics ,MOLECULAR spectroscopy ,RAMAN spectroscopy ,YOUNG'S modulus - Abstract
The possibility of tuning properties and its potential applications in the fields of optoelectronics and/or flexible electronics, has increased the demand for 2D alloys in recent times. Understanding the mechanical performance of 2D materials under extreme conditions, such as strain, stress, and fracture is essential for the reliable electronic devices based on these structures. In this study, combined molecular dynamics (MD) simulations and in situ Raman spectroscopic techniques are used to study the mechanical performance of a 2D alloy system, MoxW(1‐x) S2. It is observed that W substitution in MoS2 causes solid‐solution strengthening and increase in the Young's modulus values. Higher W content decreases failure strain for MoS2. Based on spatially resolved Raman spectroscopy and MD simulations results, a detailed model to explain failure mechanisms in MoxW(1‐x) S2 alloys is proposed. Mechanical properties of 2D alloys are an important property that has to be considered while designing flexible electronic devices. In this work, the mechanical properties such as fracture and strain of MoxW(1‐x)S2 alloy are studied using in situ Raman spectroscopy and molecular dynamics simulations. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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222. Atomic Structure and Electrical Activity of Grain Boundaries and Ruddlesden–Popper Faults in Cesium Lead Bromide Perovskite.
- Author
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Thind, Arashdeep Singh, Luo, Guangfu, Hachtel, Jordan A., Morrell, Maria V., Cho, Sung Beom, Borisevich, Albina Y., Idrobo, Juan‐Carlos, Xing, Yangchuan, and Mishra, Rohan
- Published
- 2019
- Full Text
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223. Low dose STEM imaging via inpainting of regularly undersampledimages
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Spiegelberg, Jakob, Hachtel, Jordan, Idrobo, Juan Carlos, Rusz, Ján, Spiegelberg, Jakob, Hachtel, Jordan, Idrobo, Juan Carlos, and Rusz, Ján
224. Spatially-resolved, three-dimensional investigation of surface plasmon resonances in complex nanostructures.
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Hachtel, Jordan, Mayo, Daniel, Mouti, Anas, Marvinney, Claire, Mu, Richard, Haglund, Richard F., Lupini, Andrew R., Chisholm, Matthew, and Pantelides, Sokrates T.
- Published
- 2015
225. Amorphous 1-D nanowires of calcium phosphate/pyrophosphate: A demonstration of oriented self-growth of amorphous minerals.
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Feng, Chaobo, Lu, Bing-Qiang, Fan, Yunshan, Ni, Haijian, Zhao, Yunfei, Tan, Shuo, Zhou, Zhi, Liu, Lijia, Hachtel, Jordan A., Kepaptsoglou, Demie, Wu, Baohu, Gebauer, Denis, He, Shisheng, and Chen, Feng
- Subjects
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NANOWIRES , *MINERALS , *AMORPHOUS substances , *CALCIUM phosphate , *AQUEOUS solutions , *BIOMINERALIZATION , *PYROPHOSPHATES - Abstract
[Display omitted] Amorphous inorganic solids are traditionally isotropic, thus, it is believed that they only grow in a non-preferential way without the assistance of regulators, leading to the morphologies of nanospheres or irregular aggregates of nanoparticles. However, in the presence of (ortho)phosphate (Pi) and pyrophosphate ions (PPi) which have synergistic roles in biomineralization, the highly elongated amorphous nanowires (denoted ACPPNs) form in a regulator-free aqueous solution (without templates, additives, organics, etc). Based on thorough characterization and tracking of the formation process (e.g., Cryo-TEM, spherical aberration correction high resolution TEM, solid state NMR, high energy resolution monochromated STEM-EELS), the microstructure and its preferential growth behavior are elucidated. In ACPPNs, amorphous calcium orthophosphate and amorphous calcium pyrophosphate are distributed at separated but close sites. The ACPPNs grow via either the preferential attachment of ∼2 nm nanoclusters in a 1-dimension way, or the transformation of bigger nanoparticles, indicating an inherent driving force-governed process. We propose that the anisotropy of ACPPNs microstructure, which is corroborated experimentally, causes their oriented growth. This study proves that, unlike the conventional view, amorphous minerals can form via oriented growth without external regulation, demonstrating a novel insight into the structures and growth behaviors of amorphous minerals. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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226. Direct visualization of anionic electrons in an electride reveals inhomogeneities.
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Qiang Zheng, Tianli Feng, Hachtel, Jordan A., Ryo Ishikawa, Yongqiang Cheng, Daemen, Luke, Jie Xing, Idrobo, Juan Carlos, Jiaqiang Yan, Naoya Shibata, Yuichi Ikuhara, Sales, Brian C., Pantelides, Sokrates T., and Miaofang Chi
- Subjects
- *
INELASTIC neutron scattering , *ELECTRON holography , *FINITE nuclei , *PSEUDOPOTENTIAL method , *ELECTRONS - Abstract
The article presents a study of direct visualization of the columnar anionic electron density within the prototype electride Y5Si3 with sub-angstrom spatial resolution using a scanning transmission electron microscope (STEM)-differential phase-contrast (DPC) imaging. Topics discussed include the procedures for preparing Y5Si3 crystals, the use of density functional theory (DFT) calculations to understand DPC measurements, and the ability of the model to probe spatially distributed electrons.
- Published
- 2021
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227. Sub-Ångstrom electric field measurements on a universal detector in a scanning transmission electron microscope.
- Author
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Hachtel, Jordan A., Idrobo, Juan Carlos, and Chi, Miaofang
- Subjects
ELECTRIC field strength ,SKYRMIONS ,SCANNING transmission electron microscopy ,MAGNETIC fields ,PEROVSKITE - Abstract
Scanning transmission electron microscopy (STEM) excels in accessing atomic-scale structure and chemistry. Enhancing our ability to directly image the functionalities of local features in materials has become one of the most important topics in the future development of STEM. Recently, differential phase contrast (DPC) imaging has been utilized to map the internal electric and magnetic fields in materials from nanoscale features such as p-n junctions, skyrmions, and even from individual atoms. Here, we use an ultra-low noise SCMOS detector in as the diffraction plane camera to collect four-dimensional (4D) datasets. The high angular resolution, efficient high-SNR acquisition, and modifiability of the camera allow it to function as a universal detector, where STEM imaging configurations, such as DPC, bright field, annular bright field, and annular dark field can all be reconstructed from a single 4D dataset. By examining a distorted perovskite, DyScO
3 , which possesses projected lattice spacings as small as 0.83 Å, we demonstrate DPC spatial resolution almost reaching the information limit of a 100 keV electron beam. In addition, the perovskite has ordered O-coordinations with alternating octahedral tilts, which can be quantitatively measured with single degree accuracy by taking advantage of DPC’s sensitivity to light atoms. The results, acquired on a standard Ronchigram camera as opposed to a specialized DPC detector, open up new opportunities to understand and design functional materials and devices that involve lattice and charge coupling at nano- and atomic-scales. [ABSTRACT FROM AUTHOR]- Published
- 2018
- Full Text
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228. Enhancing hyperspectral EELS analysis of complex plasmonic nanostructures with pan-sharpening.
- Author
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Borodinov, Nikolay, Banerjee, Progna, Cho, Shin Hum, Milliron, Delia J., Ovchinnikova, Olga S., Vasudevan, Rama K., and Hachtel, Jordan A.
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EELS , *NANOSTRUCTURES , *ELECTRON energy loss spectroscopy - Abstract
Nanoscale hyperspectral techniques—such as electron energy loss spectroscopy (EELS)—are critical to understand the optical response in plasmonic nanostructures, but as systems become increasingly complex, the required sampling density and acquisition times become prohibitive for instrumental and specimen stability. As a result, there has been a recent push for new experimental methodologies that can provide comprehensive information about a complex system, while significantly reducing the duration of the experiment. Here, we present a pan-sharpening approach to hyperspectral EELS analysis, where we acquire two datasets from the same region (one with high spatial resolution and one with high spectral fidelity) and combine them to achieve a single dataset with the beneficial properties of both. This work outlines a straightforward, reproducible pathway to reduced experiment times and higher signal-to-noise ratios, while retaining the relevant physical parameters of the plasmonic response, and is generally applicable to a wide range of spectroscopy modalities. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF
229. Spectrally tunable infrared plasmonic F,Sn:In2O3 nanocrystal cubes.
- Author
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Cho, Shin Hum, Roccapriore, Kevin M., Dass, Chandriker Kavir, Ghosh, Sandeep, Choi, Junho, Noh, Jungchul, Reimnitz, Lauren C., Heo, Sungyeon, Kim, Kihoon, Xie, Karen, Korgel, Brian A., Li, Xiaoqin, Hendrickson, Joshua R., Hachtel, Jordan A., and Milliron, Delia J.
- Subjects
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ELECTRON energy loss spectroscopy , *SURFACE plasmon resonance , *NANOCRYSTALS , *EXCITON theory , *PRECIOUS metals , *METALLIC oxides , *INDIUM tin oxide , *CUBES - Abstract
A synthetic challenge in faceted metal oxide nanocrystals (NCs) is realizing tunable localized surface plasmon resonance (LSPR) near-field response in the infrared (IR). Cube-shaped nanoparticles of noble metals exhibit LSPR spectral tunability limited to visible spectral range. Here, we describe the colloidal synthesis of fluorine, tin codoped indium oxide (F,Sn:In2O3) NC cubes with tunable IR range LSPR for around 10 nm particle sizes. Free carrier concentration is tuned through controlled Sn dopant incorporation, where Sn is an aliovalent n-type dopant in the In2O3 lattice. F shapes the NC morphology into cubes by functioning as a surfactant on the {100} crystallographic facets. Cube shaped F,Sn:In2O3 NCs exhibit narrow, shape-dependent multimodal LSPR due to corner, edge, and face centered modes. Monolayer NC arrays are fabricated through a liquid-air interface assembly, further demonstrating tunable LSPR response as NC film nanocavities that can heighten near-field enhancement (NFE). The tunable F,Sn:In2O3 NC near-field is coupled with PbS quantum dots, via the Purcell effect. The detuning frequency between the nanocavity and exciton is varied, resulting in IR near-field dependent enhanced exciton lifetime decay. LSPR near-field tunability is directly visualized through IR range scanning transmission electron microscopy-electron energy loss spectroscopy (STEM-EELS). STEM-EELS mapping of the spatially confined near-field in the F,Sn:In2O3 NC array interparticle gap demonstrates elevated NFE tunability in the arrays. [ABSTRACT FROM AUTHOR]
- Published
- 2020
- Full Text
- View/download PDF
230. Calibrating cryogenic temperature of TEM specimens using EELS.
- Author
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Kumar, Abinash, Tiukalova, Elizaveta, Venkatraman, Kartik, Lupini, Andrew, Hachtel, Jordan A., and Chi, Miaofang
- Subjects
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ELECTRON energy loss spectroscopy , *TEMPERATURE control , *ELECTRON microscopes , *STEREOLOGY , *LOW temperatures - Abstract
• Aluminum plasmon thermometry is demonstrated for precise calibration of cryogenic TEM holders. • Temperature deviation across widely used cryogenic holders is revealed. • Accurate temperature control will empower quantitative microscopy research for quantum materials. Cryogenic Scanning/Transmission Electron Microscopy has been established as a leading method to image sensitive biological samples and is now becoming a powerful tool to understand materials' behavior at low temperatures. However, achieving precise local temperature calibration at low temperatures remains a challenge, which is especially crucial for studying phase transitions and emergent physical properties in quantum materials. In this study, we employ electron energy loss spectroscopy (EELS) to measure local cryogenic specimen temperatures. We use the temperature-dependent characteristics of aluminum's bulk plasmon peak in EEL spectra, which shifts due to changes in electron density caused by thermal expansion and contraction. We successfully demonstrate the versatility of this method by calibrating different liquid nitrogen cooling holders in various microscopes, regardless of whether a monochromated or non-monochromated electron beam is used. Temperature discrepancies between the actual temperature and the setpoint temperatures are identified across a range from room temperature to 100 K. This work demonstrates the importance of temperature calibrations at intermediate temperatures and presents a straightforward, robust method for calibrating local temperatures of cryogenically-cooled specimens in electron microscopes. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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231. Properties and device performance of BN thin films grown on GaN by pulsed laser deposition.
- Author
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Biswas, Abhijit, Xu, Mingfei, Fu, Kai, Zhou, Jingan, Xu, Rui, Puthirath, Anand B., Hachtel, Jordan A., Li, Chenxi, Iyengar, Sathvik Ajay, Kannan, Harikishan, Zhang, Xiang, Gray, Tia, Vajtai, Robert, Glen Birdwell, A., Neupane, Mahesh R., Ruzmetov, Dmitry A., Shah, Pankaj B., Ivanov, Tony, Zhu, Hanyu, and Zhao, Yuji
- Subjects
- *
PULSED laser deposition , *LASER deposition , *BORON nitride , *THIN films , *SCANNING transmission electron microscopy , *GALLIUM nitride films , *GALLIUM nitride , *OPTOELECTRONIC devices - Abstract
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (∼234 V) as compared to GaN (∼168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
232. Separating Physically Distinct Mechanisms in Complex Infrared Plasmonic Nanostructures via Machine Learning Enhanced Electron Energy Loss Spectroscopy.
- Author
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Kalinin, Sergei V., Roccapriore, Kevin M., Cho, Shin Hum, Milliron, Delia J., Vasudevan, Rama, Ziatdinov, Maxim, and Hachtel, Jordan A.
- Subjects
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ELECTRON energy loss spectroscopy , *HYPERSPECTRAL imaging systems , *MACHINE learning , *NANOSTRUCTURES , *SCANNING transmission electron microscopy - Abstract
Electron energy loss spectroscopy (EELS) enables direct exploration of plasmonic phenomena at the nanometer level. To isolate individual plasmon modes, linear unmixing methods can be used to separate different physical mechanisms, but in larger and more complex systems the interpretability of the components becomes uncertain. Here, infrared plasmonic resonances in self‐assembled heterogeneous monolayer films of doped‐semiconductor nanoparticles are examined beyond linear unmixing techniques, and both supervised and unsupervised machine‐learning‐based analyses of hyperspectral EELS datasets are demonstrated. In the supervised approach, a human operator labels a small number of pixels in the hyperspectral dataset corresponding to features of interest which are then propagated across the entire dataset. In the unsupervised approach, non‐linear autoencoders are used to create a highly‐reduced latent‐space representation of the dataset, within which insight into the relevant physics can be gleaned from straightforward distance metrics that do not depend on operator input and bias. The advantage of these approaches is that the labeling separates physical mechanisms without altering the data, enabling robust analyses of the influence of heterogeneities in mesoscale complex systems. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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233. High-K dielectric sulfur-selenium alloys.
- Author
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Susarla, Sandhya, Tsafack, Thierry, Owuor, Peter Samora, Puthirath, Anand B., Babu, Ganguli, Apte, Amey, Jawdat, BenMaan I., Jun Lou, Ajayan, Pulickel M., Tiwary, Chandra Sekhar, Hachtel, Jordan A., Idrobo, Juan Carlos, Hilario, Martin S., Lerma, Albert, Calderon, Hector A., Hernandez, Francisco C. Robles, Tam, David W., Pengcheng Dai, Tong Li, and Bingqing Wei
- Subjects
- *
DIELECTRIC materials , *ELECTRIC circuits , *ENERGY storage , *ELECTRIC insulators & insulation , *RESONATORS - Abstract
The article talks about dieletric materials such as insulators, resonators and capacitors that are vital components in electronic circuits that are used for energy storage applications. Topics discussed include future advancements in flexible technology requiring mechanically compliant dielectric materials.
- Published
- 2019
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234. Observations of radiation-enhanced ductility in irradiated Inconel 718: Tensile properties, deformation behavior, and microstructure.
- Author
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McClintock, David A., Gussev, Maxim N., Campbell, Cody, Mao, Keyou, Lach, Timothy G., Lu, Wei, Hachtel, Jordan A., and Unocic, Kinga A.
- Subjects
- *
ELECTRON energy loss spectroscopy , *SCANNING transmission electron microscopy , *MATERIALS testing , *DUCTILITY , *DIGITAL image correlation , *PROTON beams , *DOUBLE walled carbon nanotubes - Abstract
An increase in ductility with radiation dose was observed and investigated during postirradiation evaluation of tensile properties, microstructure, deformation behavior, and fracture behavior of specimens from a solution-annealed Inconel 718 proton beam window operated at the Spallation Neutron Source. While in service, the window was irradiated with 940 MeV protons to a maximum dose of approximately 9.7 displacements per atom (dpa) at a calculated irradiation temperature of approximately 110 °C. The double-walled window was sampled after removal from service, and specimens from the samples were characterized using transmission electron microscopy and tensile testing accompanied by digital image correlation. The results showed that the window material had very high tensile strength and retained an appreciable amount of ductility after irradiation. Specimens irradiated to approximately 9 dpa had yield strengths of around 1 GPa while concurrently straining to approximately 19% total elongation before fracture. A steady increase in ductility was observed with increasing dose for the material tested; both uniform and total elongation values increased as the radiation dose increased from 2.5 to 9.7 dpa. High-resolution scanning transmission electron microscopy and electron energy-loss spectroscopy, performed at atomic resolution, showed the existence of nanometer scale stacking faults and nanometer size vacancy clusters associated with H and possibly He. These radiation-induced defect structures may have increased the ability of the material to strain-harden during deformation and increased the ductility with increasing dose. The results were encouraging and suggest that the mechanical performance of Inconel 718 after irradiation to 9.7 dpa is favorable and provided support to increase the proton beam window service lifetime to higher displacement dose levels. [Display omitted] [ABSTRACT FROM AUTHOR]
- Published
- 2022
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235. Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition
- Author
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Vincent Gambin, Teresa Ha, Chandra Sekhar Tiwary, Jiawei Lai, Xiang Zhang, Eduardo Villarreal, Liangliang Dong, Rachel Koltun, Emilie Ringe, Zixing Wang, Jihui Yang, Robert Vajtai, Jun Lou, Pulickel M. Ajayan, Juan Carlos Idrobo, Zehua Jin, Luqing Wang, Jordan A. Hachtel, Boris I. Yakobson, Yusuke Nakanishi, Zhang, Xiang [0000-0003-4004-5185], Jin, Zehua [0000-0003-1985-0446], Hachtel, Jordan A [0000-0002-9728-0920], Wang, Zixing [0000-0002-9588-8940], Nakanishi, Yusuke [0000-0001-8782-9556], Vajtai, Robert [0000-0002-3942-8827], Ringe, Emilie [0000-0003-3743-9204], Lou, Jun [0000-0002-0200-3948], Gambin, Vincent [0000-0002-3860-5166], and Apollo - University of Cambridge Repository
- Subjects
Materials science ,Schottky barrier ,contact resistance ,MoTe2 ,02 engineering and technology ,Chemical vapor deposition ,in-plane heterostructure ,sub-03 ,010402 general chemistry ,Metal–semiconductor junction ,01 natural sciences ,chemical vapor deposition ,Metal ,Phase (matter) ,General Materials Science ,two-dimensional materials ,business.industry ,Contact resistance ,Heterojunction ,021001 nanoscience & nanotechnology ,metal−semiconductor junction ,0104 chemical sciences ,Characterization (materials science) ,visual_art ,visual_art.visual_art_medium ,Optoelectronics ,0210 nano-technology ,business - Abstract
Metal–semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T′ MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T′ phase, and 2H/1T′ in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T′ junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.
- Published
- 2019
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236. Spatially Precise Light-Activated Dedoping in Wafer-Scale MoS 2 Films.
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Ghoshal D, Paul G, Sagar S, Shank C, Hurley LA, Hooper N, Tan J, Burns K, Hachtel JA, Ferguson AJ, Blackburn JL, Lagemaat JV, and Miller EM
- Abstract
2D materials, particularly transition metal dichalcogenides (TMDCs), have shown great potential for microelectronics and optoelectronics. However, a major challenge in commercializing these materials is the inability to control their doping at a wafer scale with high spatial fidelity. Interface chemistry is used with the underlying substrate oxide and concomitant exposure to visible light in ambient conditions for photo-dedoping wafer scale MoS
2 . It is hypothesized that the oxide layer traps photoexcited holes, leaving behind long-lived electrons that become available for surface reactions with ambient air at sulfur vacancies (defect sites) resulting in dedoping. Additionally, high fidelity spatial control is showcased over the dedoping process, by laser writing, and fine control achieved over the degree of doping by modulating the illumination time and power density. This localized change in MoS2 doping density is very stable (at least 7 days) and robust to processing conditions like high temperature and vacuum. The scalability and ease of implementation of this approach can address one of the major issues preventing the "Lab to Fab" transition of 2D materials and facilitate its seamless integration for commercial applications in multi-logic devices, inverters, and other optoelectronic devices., (© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)- Published
- 2024
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237. Development of a Modular Cryo-Transfer Station for the Side-Entry Transmission Electron Microscope†.
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Reifsnyder A, Hachtel JA, Lupini AR, and McComb DW
- Abstract
Cryo-transfer stations are essential tools in the field of cryo-electron microscopy, enabling the safe transfer of frozen vitreous samples between different stages of the workflow. However, existing cryo-transfer stations are typically configured for only the two most popular sample holder geometries and are not commercially available for all electron microscopes. Additionally, they are expensive and difficult to customize, which limits their accessibility and adaptability for research laboratories. Here, we present a new modular cryo-transfer station that addresses these limitations. The station is composed entirely of 3D-printed and off the shelf parts, allowing it to be reconfigured to a fit variety of microscopes and experimental protocols. We describe the design and construction of the station and report on the results of testing the cryo-transfer station, including its ability to maintain cryogenic temperatures and transfer frozen vitreous samples as demonstrated by vibrational spectroscopy. Our findings demonstrate that the cryo-transfer station performs comparably to existing commercial models, while offering greater accessibility and customizability. The design for the station is open source to encourage other groups to replicate and build on this development. We hope that this project will increase access to cryo-transfer stations for researchers in a variety of disciplines with nonstandard equipment., Competing Interests: Conflict of Interest: The authors declare that they have no competing interest., (© The Author(s) 2024. Published by Oxford University Press on behalf of the Microscopy Society of America.)
- Published
- 2024
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238. Nanoscale core-shell structure and recrystallization of swift heavy ion tracks in SrTiO 3 .
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Gupta AK, Zarkadoula E, Ziatdinov M, Kalinin SV, Paduri VR, Hachtel JA, Zhang Y, Trautmann C, Weber WJ, and Sachan R
- Abstract
It is widely accepted that the interaction of swift heavy ions with many complex oxides is predominantly governed by the electronic energy loss that gives rise to nanoscale amorphous ion tracks along the penetration direction. The question of how electronic excitation and electron-phonon coupling affect the atomic system through defect production, recrystallization, and strain effects has not yet been fully clarified. To advance the knowledge of the atomic structure of ion tracks, we irradiated single crystalline SrTiO
3 with 629 MeV Xe ions and performed comprehensive electron microscopy investigations complemented by molecular dynamics simulations. This study shows discontinuous ion-track formation along the ion penetration path, comprising an amorphous core and a surrounding few monolayer thick shell of strained/defective crystalline SrTiO3 . Using machine-learning-aided analysis of atomic-scale images, we demonstrate the presence of 4-8% strain in the disordered region interfacing with the amorphous core in the initially formed ion tracks. Under constant exposure of the electron beam during imaging, the amorphous part of the ion tracks readily recrystallizes radially inwards from the crystalline-amorphous interface under the constant electron-beam irradiation during the imaging. Cation strain in the amorphous region is observed to be significantly recovered, while the oxygen sublattice remains strained even under the electron irradiation due to the present oxygen vacancies. The molecular dynamics simulations support this observation and suggest that local transient heating and annealing facilitate recrystallization process of the amorphous phase and drive Sr and Ti sublattices to rearrange. In contrast, the annealing of O atoms is difficult, thus leaving a remnant of oxygen vacancies and strain even after recrystallization. This work provides insights for creating and transforming novel interfaces and nanostructures for future functional applications.- Published
- 2024
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239. Nonequivalent Atomic Vibrations at Interfaces in a Polar Superlattice.
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Hoglund ER, Walker HA, Hussain K, Bao DL, Ni H, Mamun A, Baxter J, Caldwell JD, Khan A, Pantelides ST, Hopkins PE, and Hachtel JA
- Abstract
In heterostructures made from polar materials, e.g., AlN-GaN-AlN, the nonequivalence of the two interfaces is long recognized as a critical aspect of their electronic properties; in that, they host different 2D carrier gases. Interfaces play an important role in the vibrational properties of materials, where interface states enhance thermal conductivity and can generate unique infrared-optical activity. The nonequivalence of the corresponding interface atomic vibrations, however, is not investigated so far due to a lack of experimental techniques with both high spatial and high spectral resolution. Herein, the nonequivalence of AlN-(Al
0.65 Ga0.35 )N and (Al0.65 Ga0.35 )N-AlN interface vibrations is experimentally demonstrated using monochromated electron energy-loss spectroscopy in the scanning transmission electron microscope (STEM-EELS) and density-functional-theory (DFT) calculations are employed to gain insights in the physical origins of observations. It is demonstrated that STEM-EELS possesses sensitivity to the displacement vector of the vibrational modes as well as the frequency, which is as critical to understanding vibrations as polarization in optical spectroscopies. The combination enables direct mapping of the nonequivalent interface phonons between materials with different phonon polarizations. The results demonstrate the capacity to carefully assess the vibrational properties of complex heterostructures where interface states dominate the functional properties., (© 2024 Wiley‐VCH GmbH.)- Published
- 2024
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240. Environmental damping and vibrational coupling of confined fluids within isolated carbon nanotubes.
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Tu YM, Kuehne M, Misra RP, Ritt CL, Oliaei H, Faucher S, Li H, Xu X, Penn A, Yang S, Yang JF, Sendgikoski K, Chakraverty J, Cumings J, Majumdar A, Aluru NR, Hachtel JA, Blankschtein D, and Strano MS
- Abstract
Because of their large surface areas, nanotubes and nanowires demonstrate exquisite mechanical coupling to their surroundings, promising advanced sensors and nanomechanical devices. However, this environmental sensitivity has resulted in several ambiguous observations of vibrational coupling across various experiments. Herein, we demonstrate a temperature-dependent Radial Breathing Mode (RBM) frequency in free-standing, electron-diffraction-assigned Double-Walled Carbon Nanotubes (DWNTs) that shows an unexpected and thermally reversible frequency downshift of 10 to 15%, for systems isolated in vacuum. An analysis based on a harmonic oscillator model assigns the distinctive frequency cusp, produced over 93 scans of 3 distinct DWNTs, along with the hyperbolic trajectory, to a reversible increase in damping from graphitic ribbons on the exterior surface. Strain-dependent coupling from self-tensioned, suspended DWNTs maintains the ratio of spring-to-damping frequencies, producing a stable saturation of RBM in the low-tension limit. In contrast, when the interior of DWNTs is subjected to a water-filling process, the RBM thermal trajectory is altered to that of a Langmuir isobar and elliptical trajectories, allowing measurement of the enthalpy of confined fluid phase change. These mechanisms and quantitative theory provide new insights into the environmental coupling of nanomechanical systems and the implications for devices and nanofluidic conduits., (© 2024. This is a U.S. Government work and not under copyright protection in the US; foreign copyright protection may apply.)
- Published
- 2024
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241. Creation of Multi-Principal Element Alloy NiCoCr Nanostructures via Nanosecond Laser-Induced Dewetting.
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Mandal S, Gupta AK, Konečná A, Shirato N, Hachtel JA, and Sachan R
- Abstract
The multi-principal element alloy nanoparticles (MPEA NPs), a new class of nanomaterials, present a highly rewarding opportunity to explore new or vastly different functional properties than the traditional mono/bi/multimetallic nanostructures due to their unique characteristics of atomic-level homogeneous mixing of constituent elements in the nanoconfinements. Here, the successful creation of NiCoCr nanoparticles, a well-known MPEA system is reported, using ultrafast nanosecond laser-induced dewetting of alloy thin films. Nanoparticle formation occurs by spontaneously breaking the energetically unstable thin films in a melt state under laser-induced hydrodynamic instability and subsequently accumulating in a droplet shape via surface energy minimization. While NiCoCr alloy shows a stark contrast in physical properties compared to individual metallic constituents, i.e., Ni, Co, and Cr, yet the transient nature of the laser-driven process facilitates a homogeneous distribution of the constituents (Ni, Co, and Cr) in the nanoparticles. Using high-resolution chemical analysis and scanning nanodiffraction, the environmental stability and grain arrangement in the nanoparticles are further investigated. Thermal transport simulations reveal that the ultrashort (≈100 ns) melt-state lifetime of NiCoCr during the dewetting event helps retain the constituent elements in a single-phase solid solution with homogenous distribution and opens the pathway to create the unique MPEA nanoparticles with laser-induced dewetting process., (© 2024 Wiley‐VCH GmbH.)
- Published
- 2024
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242. Singular and Nonsingular Transitions in the Infrared Plasmons of Nearly Touching Nanocube Dimers.
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Wu Y, Konečná A, Cho SH, Milliron DJ, Hachtel JA, and García de Abajo FJ
- Abstract
Narrow gaps between plasmon-supporting materials can confine infrared electromagnetic energy at the nanoscale, thus enabling applications in areas such as optical sensing. However, in nanoparticle dimers, the nature of the transition between touching (zero gap) and nearly nontouching (nonzero gap ≲15 nm) regimes is still a subject of debate. Here, we observe both singular and nonsingular transitions in infrared plasmons confined to dimers of fluorine-doped indium oxide nanocubes when moving from touching to nontouching configurations depending on the dimensionality of the contact region. Through spatially resolved electron energy-loss spectroscopy, we find a continuous spectral evolution of the lowest-order plasmon mode across the transition for finite touching areas, in excellent agreement with the simulations. This behavior challenges the widely accepted idea that a singular transition always emerges in the near-touching regime of plasmonic particle dimers. The apparent contradiction is resolved by theoretically examining different types of gap morphologies, revealing that the presence of a finite touching area renders the transition nonsingular, while one-dimensional and point-like contacts produce a singular behavior in which the lowest-order dipolar mode in the touching configuration, characterized by a net induced charge in each of the particles, becomes unphysical as soon as they are separated. Our results provide valuable insights into the nature of dimer plasmons in highly doped semiconductors.
- Published
- 2024
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243. Giant Modulation of Refractive Index from Picoscale Atomic Displacements.
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Zhao B, Ren G, Mei H, Wu VC, Singh S, Jung GY, Chen H, Giovine R, Niu S, Thind AS, Salman J, Settineri NS, Chakoumakos BC, Manley ME, Hermann RP, Lupini AR, Chi M, Hachtel JA, Simonov A, Teat SJ, Clément RJ, Kats MA, Ravichandran J, and Mishra R
- Abstract
It is shown that structural disorder-in the form of anisotropic, picoscale atomic displacements-modulates the refractive index tensor and results in the giant optical anisotropy observed in BaTiS
3 , a quasi-1D hexagonal chalcogenide. Single-crystal X-ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS6 chains along the c-axis, and threefold degenerate Ti displacements in the a-b plane.47/49 Ti solid-state NMR provides additional evidence for those Ti displacements in the form of a three-horned NMR lineshape resulting from a low symmetry local environment around Ti atoms. Scanning transmission electron microscopy is used to directly observe the globally disordered Ti a-b plane displacements and find them to be ordered locally over a few unit cells. First-principles calculations show that the Ti a-b plane displacements selectively reduce the refractive index along the ab-plane, while having minimal impact on the refractive index along the chain direction, thus resulting in a giant enhancement in the optical anisotropy. By showing a strong connection between structural disorder with picoscale displacements and the optical response in BaTiS3 , this study opens a pathway for designing optical materials with high refractive index and functionalities such as large optical anisotropy and nonlinearity., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)- Published
- 2024
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244. Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors.
- Author
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Sutter E, Kisslinger K, Unocic RR, Burns K, Hachtel J, and Sutter P
- Abstract
Lateral heterostructures combining two multilayer group IV chalcogenide van der Waals semiconductors have attracted interest for optoelectronics, twistronics, and valleytronics, owing to their structural anisotropy, bulk-like electronic properties, enhanced optical thickness, and vertical interfaces enabling in-plane charge manipulation/separation, perpendicular to the trajectory of incident light. Group IV monochalcogenides support propagating photonic waveguide modes, but their interference gives rise to complex light emission patterns throughout the visible/near-infrared range both in uniform flakes and single-interface lateral heterostructures. Here, this work demonstrates the judicious integration of pure and alloyed monochalcogenide crystals into multimaterial heterostructures with unique photonic properties, notably the ability to select photonic modes with targeted discrete energies through geometric factors rather than band engineering. SnS-GeS
1-x Sex -GeSe-GeS1-x Sex heterostructures with a GeS1-x Sex active layer sandwiched laterally between GeSe and SnS, semiconductors with similar optical constants but smaller bandgaps, were designed and realized via sequential vapor transport synthesis. Raman spectroscopy, electron microscopy/diffraction, and energy-dispersive X-ray spectroscopy confirm a high crystal quality of the laterally stitched components with sharp interfaces. Nanometer-scale cathodoluminescence spectroscopy provides evidence for a facile transfer of electron-hole pairs across the lateral interfaces and demonstrates the selection of photon emission at discrete energies in the laterally embedded active (GeS1- x Sex ) part of the heterostructure., (© 2023 The Authors. Small published by Wiley‐VCH GmbH.)- Published
- 2024
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245. Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor.
- Author
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Yu Y, Turkowski V, Hachtel JA, Puretzky AA, Ievlev AV, Din NU, Harris SB, Iyer V, Rouleau CM, Rahman TS, Geohegan DB, and Xiao K
- Abstract
Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, which can affect both thermal properties and optoelectronic properties of conventional semiconductors. However, how isotopic mass affects the optoelectronic properties in 2D semiconductors remains unclear because of measurement uncertainties resulting from sample heterogeneities. Here, we report an anomalous optical bandgap energy red shift of 13 (±7) milli-electron volts as mass of Mo isotopes is increased in laterally structured
100 MoS2 -92 MoS2 monolayers grown by a two-step chemical vapor deposition that mitigates the effects of heterogeneities. This trend, which is opposite to that observed in conventional semiconductors, is explained by many-body perturbation and time-dependent density functional theories that reveal unusually large exciton binding energy renormalizations exceeding the ground-state renormalization energy due to strong coupling between confined excitons and phonons. The isotope effect on the optical bandgap reported here provides perspective on the important role of exciton-phonon coupling in the physical properties of two-dimensional materials.- Published
- 2024
- Full Text
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246. Non-Linear Optics at Twist Interfaces in h-BN/SiC Heterostructures.
- Author
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Biswas A, Xu R, Alvarez GA, Zhang J, Christiansen-Salameh J, Puthirath AB, Burns K, Hachtel JA, Li T, Iyengar SA, Gray T, Li C, Zhang X, Kannan H, Elkins J, Pieshkov TS, Vajtai R, Birdwell AG, Neupane MR, Garratt EJ, Ivanov TG, Pate BB, Zhao Y, Zhu H, Tian Z, Rubio A, and Ajayan PM
- Abstract
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, an alternative, simple, and scalable approach is suggested, where nanocrystallinetwo-dimensional (2D) film on 3D substrates yields twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. This work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology., (© 2023 Wiley-VCH GmbH.)
- Published
- 2023
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247. Colossal Optical Anisotropy from Atomic-Scale Modulations.
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Mei H, Ren G, Zhao B, Salman J, Jung GY, Chen H, Singh S, Thind AS, Cavin J, Hachtel JA, Chi M, Niu S, Joe G, Wan C, Settineri N, Teat SJ, Chakoumakos BC, Ravichandran J, Mishra R, and Kats MA
- Abstract
Materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g., in wave plates, polarizing beam splitters, etc.), nonlinear optics, micromanipulation, and as a platform for unconventional light-matter coupling, such as hyperbolic phonon polaritons. Layered 2D materials can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optical axis is out of the plane of the layers and the layers are weakly attached. This work demonstrates that a bulk crystal with subtle periodic modulations in its structure-Sr
9/8 TiS3 -is transparent and positive-uniaxial, with extraordinary index ne = 4.5 and ordinary index no = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3 , results in the formation of TiS6 trigonal-prismatic units that break the chains of face-sharing TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr form highly oriented electron clouds, which selectively boost the extraordinary index ne and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation., (© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.)- Published
- 2023
- Full Text
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248. Tailoring the Angular Mismatch in MoS 2 Homobilayers through Deformation Fields.
- Author
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Burns K, Tan AMZ, Hachtel JA, Aditya A, Baradwaj N, Mishra A, Linker T, Nakano A, Kalia R, Lang EJ, Schoell R, Hennig RG, Hattar K, and Aitkaliyeva A
- Abstract
Ultrathin MoS
2 has shown remarkable characteristics at the atomic scale with an immutable disorder to weak external stimuli. Ion beam modification unlocks the potential to selectively tune the size, concentration, and morphology of defects produced at the site of impact in 2D materials. Combining experiments, first-principles calculations, atomistic simulations, and transfer learning, it is shown that irradiation-induced defects can induce a rotation-dependent moiré pattern in vertically stacked homobilayers of MoS2 by deforming the atomically thin material and exciting surface acoustic waves (SAWs). Additionally, the direct correlation between stress and lattice disorder by probing the intrinsic defects and atomic environments are demonstrated. The method introduced in this paper sheds light on how engineering defects in the lattice can be used to tailor the angular mismatch in van der Waals (vdW) solids., (© 2023 Wiley-VCH GmbH.)- Published
- 2023
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- View/download PDF
249. Understanding Heterogeneities in Quantum Materials.
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Ko W, Gai Z, Puretzky AA, Liang L, Berlijn T, Hachtel JA, Xiao K, Ganesh P, Yoon M, and Li AP
- Abstract
Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials., (© 2022 Wiley-VCH GmbH.)
- Published
- 2023
- Full Text
- View/download PDF
250. Direct Visualization of Localized Vibrations at Complex Grain Boundaries.
- Author
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Hoglund ER, Bao DL, O'Hara A, Pfeifer TW, Hoque MSB, Makarem S, Howe JM, Pantelides ST, Hopkins PE, and Hachtel JA
- Abstract
Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The functionality at a GB results from the unique atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared optical, and thermal properties. In this work, a SrTiO
3 GB is examined using atomic-resolution aberration-corrected scanning transmission electron microscopy and ultrahigh-energy-resolution monochromated electron energy-loss spectroscopy, in conjunction with density functional theory. This combination enables the correlation of the GB structure, nonstoichiometry, and chemical bonding with a redistribution of vibrational states within the GB dislocation cores. The new experimental access to localized GB vibrations provides a direct route to quantifying the impact of individual boundaries on macroscopic properties., (© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.)- Published
- 2023
- Full Text
- View/download PDF
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