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1,322 results on '"Godlewski, M"'

201. Compensation mechanisms in magnesium doped GaN

Author

Godlewski, M, Przybylinska, H, Bozek, R, Goldys, EM, Bergman, Peder, Monemar, Bo, Grzegory, I, Porowski, S, Godlewski, M, Przybylinska, H, Bozek, R, Goldys, EM, Bergman, Peder, Monemar, Bo, Grzegory, I, and Porowski, S

Abstract

Compensation processes in magnesium doped GaN epilayers and bulk samples are studied. We demonstrate enhancement of potential fluctuations in Mg doped samples, from Kelvin probe atomic force microscopy measurements. Large- and small-scale light emission fluctuations are also demonstrated. Micro-photoluminescence (PL) study indicates an unusual anti-correlation between the intensities of excitonic and defect-related emission processes in p-type doped structures and also the presence of the so-called hot-PL. Hot-PL observed in compensated p-type samples, we relate to the presence of strong potential fluctuations. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Published
2004
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202. Luminescent properties of wide bandgap materials at room temperature

Author

Godlewski, M, Szmidt, J, Olszyna, A, Werbowy, A, Łusakowska, E, Phillips, MR, Goldys, EM, Sokolowska, A, Godlewski, M, Szmidt, J, Olszyna, A, Werbowy, A, Łusakowska, E, Phillips, MR, Goldys, EM, and Sokolowska, A

Abstract

Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Published
2004

203. Monocrystalline ZnO films grown by atomic layer epitaxy - growth and characterization

Author

Munoz, M, Tamargo, M, Furdyna, J, Luo, H, Kopalko, K, Godlewski, M, Lusakowska, E, Paszkowicz, W, Domagala, JZ, Szczerbakow, A, Ivanov, VY, Godlewski, MM, Phillips, MR, Munoz, M, Tamargo, M, Furdyna, J, Luo, H, Kopalko, K, Godlewski, M, Lusakowska, E, Paszkowicz, W, Domagala, JZ, Szczerbakow, A, Ivanov, VY, Godlewski, MM, and Phillips, MR

Published
2004

204. Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

Author

Godlewski, M, Łusakowska, E, Bozek, R, Goldys, EM, Phillips, MR, Böttcher, T, Figge, S, Hommel, D, Godlewski, M, Łusakowska, E, Bozek, R, Goldys, EM, Phillips, MR, Böttcher, T, Figge, S, and Hommel, D

Abstract

We evaluate influence of n-type doping and of the doping level on structural and optical quality of GaN epilayers. We confirm reported previously strong enhancement of light emission from Si doped samples and discuss possible mechanisms of this enhancement. Kelvin probe measurements indicate smoothing of potential fluctuations in the doped layers. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Published
2004

206. Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application

Author

Wachnicki, Ł., primary, Dużyńska, A., additional, Domagala, J.Z., additional, Witkowski, B.S., additional, Krajewski, T.A., additional, Przeździecka, E., additional, Guziewicz, M., additional, Wierzbicka, A., additional, Kopalko, K., additional, Figge, S., additional, Hommel, D., additional, Godlewski, M., additional, and Guziewicz, E., additional

Published
2011
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215. Role of interface in ferromagnetism of (Zn,Co)O films

Author

Godlewski, M., primary, Guziewicz, E., additional, Łukasiewicz, M. I., additional, Kowalik, I. A., additional, Sawicki, M., additional, Witkowski, B. S., additional, Jakieła, R., additional, Lisowski, W., additional, Sobczak, J. W., additional, and Krawczyk, M., additional

Published
2011
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226. Microwave-induced delocalization of excitons in ternary compounds of II-VI and III-V semiconductors

Author

Ivanov, VY, Godlewski, M, Khachapuridze, A, Yatsunenko, S, Wojtowicz, T, Karczewski, G, Bergman, JP, Monemar, Bo, Shamirzaev, T, Zhuravlev, Konstantin, Leonardi, K, Hommel, D, Ivanov, VY, Godlewski, M, Khachapuridze, A, Yatsunenko, S, Wojtowicz, T, Karczewski, G, Bergman, JP, Monemar, Bo, Shamirzaev, T, Zhuravlev, Konstantin, Leonardi, K, and Hommel, D

Abstract

In this work we employ technique of optically detected cyclotron resonance for evaluation of the role of localization processes in CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures. From microwave-induced changes of excitonic emissions we evaluate magnitude of potential fluctuations (Stokes shift), correlate optically detected cyclotron resonance results with the results of time-resolved experiments and discuss nature of recombination processes in the limit of a strong localization.

Published
2003

227. Origin of white color light emission in ALE-grown ZnSe

Author

Godlewski, M, Guziewicz, E, Kopalko, K, Łusakowska, E, Dynowska, E, Godlewski, MM, Goldys, EM, Phillips, MR, Godlewski, M, Guziewicz, E, Kopalko, K, Łusakowska, E, Dynowska, E, Godlewski, MM, Goldys, EM, and Phillips, MR

Abstract

We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage. © 2002 Elsevier Science B.V. All rights reserved.

Published
2003

228. Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction

Author

Yatsunenko, S, Khachapuridze, A, Ivanov, VY, Godlewski, M, Van Khoi, L, Gołacki, Z, Karczewski, G, Goldys, EM, Phillips, M, Klar, PJ, Heimbrodt, W, Yatsunenko, S, Khachapuridze, A, Ivanov, VY, Godlewski, M, Van Khoi, L, Gołacki, Z, Karczewski, G, Goldys, EM, Phillips, M, Klar, PJ, and Heimbrodt, W

Abstract

The spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap were discussed. The observed lifetime shortening of intrashell manganese ion emission was related to spin dependent magnetic interactions. The mechanism was found to be active in both bulk and low dimensional structures.

Published
2003

229. Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission

Author

Godlewski, M, Ivanov, VY, Goldys, EM, Phillips, M, Böttcher, T, Figge, S, Hommel, D, Czernecki, R, Prystawko, P, Leszczynski, M, Perlin, P, Grzegory, I, Porowski, S, Godlewski, M, Ivanov, VY, Goldys, EM, Phillips, M, Böttcher, T, Figge, S, Hommel, D, Czernecki, R, Prystawko, P, Leszczynski, M, Perlin, P, Grzegory, I, and Porowski, S

Abstract

Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.

Published
2003

234. Preface

Author

Godlewski, M., primary and Zakrzewski, A. J., additional

Published
2010
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239. Puzzling magneto-optical properties of ZnMnO films

Author

Godlewski, M., primary, Wąsiakowski, A., additional, Ivanov, V.Yu., additional, Wójcik-Głodowska, A., additional, Łukasiewicz, M., additional, Guziewicz, E., additional, Jakieła, R., additional, Kopalko, K., additional, Zakrzewski, A., additional, and Dumont, Y., additional

Published
2010
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240. Opposite effects of two different strains of equine herpesvirus 1 infection on cytoskeleton composition in equine dermal ED and African green monkey kidney Vero cell lines: application of scanning cytometry and confocal-microscopy-based image analysis in a quantitative study

Author

Turowska, A., primary, Pajak, B., additional, Godlewski, M. M., additional, Dzieciątkowski, T., additional, Chmielewska, A., additional, Tucholska, A., additional, and Banbura, M., additional

Published
2010
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242. Influence of structural properties and of growth conditions on exciton properties in ZnCdSe/ZnSe quantum well structures

Author

Godlewski, M, Guziewicz, E, Leonardi, K, Hommel, D, Bergman, Peder, Monemar, Bo, Godlewski, M, Guziewicz, E, Leonardi, K, Hommel, D, Bergman, Peder, and Monemar, Bo

Abstract

Structural and optical properties of relaxed and pseudomorphic ZnCdSe/ZnSe quantum well heterostructures are described. Structural quality and strain conditions of the films are linked with their light emission properties. From the temperature dependence of photoluminescence (PL) spectra we estimate exciton coupling constants to acoustic phonons in pseudomorphic and relaxed structures. The coupling is noticeably weaker in strain-relaxed structures with strong localization effects. PL kinetic studies confirm strong localization of excitons in strain-relaxed structures.

Published
2002

243. Relationship between sample morphology and carrier diffusion length in gan thin films

Author

Godlewski, M, Goldys, EM, Phillips, M, Böttcher, T, Flgge, S, Hommel, D, Czernecki, R, Prystawko, P, Leszczynski, M, Perlin, P, Wisniewski, P, Suski, T, Bockowski, M, Grzegory, I, Porowski, S, Godlewski, M, Goldys, EM, Phillips, M, Böttcher, T, Flgge, S, Hommel, D, Czernecki, R, Prystawko, P, Leszczynski, M, Perlin, P, Wisniewski, P, Suski, T, Bockowski, M, Grzegory, I, and Porowski, S

Abstract

Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

Published
2002

244. Mn2+ intra-shell recombination in bulk and quantum dots of II-VI compounds

Author

Godlewski, M., Ivanov, V.Yu., Bergman, Peder, Monemar, Bo, Golacki, Z., Karczewski, G., Godlewski, M., Ivanov, V.Yu., Bergman, Peder, Monemar, Bo, Golacki, Z., and Karczewski, G.

Abstract

Origin of a fast component of the photoluminescence (PL) decay of Mn 2+ intra-shell 4T1 ? 6A 1 transition in bulk and quantum dot structures is discussed based on the results of PL, PL kinetics and optically detected magnetic resonance experiments. It is demonstrated that a fast component of the PL decay, reported previously for quantum dot structure and related to quantum confinement effects, is also observed in bulk samples and is very much enhanced upon generation of free carriers. The appearance of this fast component of the PL decay is related to a very efficient spin cross-relaxation between localized spins of Mn ions and spins of free carriers. © 2002 Elsevier Science B.V. All rights reserved.

Published
2002
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245. Interaction of microwave heated hot carriers with recombination centers

Author

Godlewski, M, Ivanov, VY, Khachapuridze, A, Narkowicz, R, Bergman, Peder, Monemar, Bo, Godlewski, M, Ivanov, VY, Khachapuridze, A, Narkowicz, R, Bergman, Peder, and Monemar, Bo

Abstract

We describe application of the technique of optically detected cyclotron resonance (ODCR) to the studies of exciton properties in quantum well structures of CdTe/CdMnTe in the limit of strong localization effects. Microwave-heated free carriers, at cyclotron resonance conditions, can site- or impurity-delocalise excitons, resulting in a strong modification of a low temperature photoluminescence. In consequence, the ODCR allows to study processes of carrier/exciton localization. We show that localization effects are very strong in quantum well structures of CdTe/CdMnTe with large Mn fractions in the CdMnTe barriers.

Published
2002

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