841 results on '"Ghezzi, C"'
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202. Guest editorial: introduction to the special section
203. Analyzing refinements of state based specifications: the case of TB nets
204. Software specialization via symbolic execution
205. A unified high-level Petri net formalism for time-critical systems
206. Introduction to the special issue
207. Hot electron and DX center insensitivity of Al/sub 0.25/Ga/sub 0.75/As/GaAs HFET's designed for microwave power applications
208. Concentration dependence of optical absorption in tellurium-doped GaSb
209. Control of the n-type doping in AlxGa1 − xSb: DX-center behavior of the Te impurity
210. Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb
211. In vitro uptake kinetics of bis (N-ethoxy, N-ethyl dithiocarbamato) nitrido technetium-99M (V), a myocardial perfusion imaging agent: A study in cultured cardiac cells
212. Specification of realtime systems using ASTRAL
213. Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy
214. Guest Editorial Introduction to the Special Section
215. Ras P21 protein promotes survival and differentiation of human embryonic neural crest-derived cells
216. Coexistence of theDXcenter with nonmetastable states of the donor impurity in Si-dopedAlxGa1−xAs: Effects on the low-temperature electron mobility
217. Biological studies of analogues of glucose iodinated in positions 1, 2, or 3
218. Experimental models, protocols, and reference values for evaluation of iodinated analogues of glucose
219. Optical absorption near the fundamental absorption edge in GaSb
220. Hall and photo-Hall effect measurements on sulphur-doped GaSb
221. Identification of Multiple Transcribed Sequences from the Spinal Muscular Atrophy Region on Human Chromosome 5
222. How to deal with deviations during process model enactment
223. Coexistence of the DX center and other Si-related electron bound states in
224. Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization
225. Electron scattering by spatially correlatedDXcharges
226. Low-temperature occupation of a donor state resonant with the conduction band inAl0.35Ga0.65As
227. Hole Capture by the DX Center in AlGaAs Schottky Barriers
228. Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As
229. Investigation of the charge state of the DX centre through analysis of electron mobility data in AlxGa1-xAs
230. Spatial correlations of DX charges and electron mobility in AlxGa1-xAs
231. Software process model evolution in the SPADE environment
232. Enfoque diagnostico endoscópico en el diagnostico de la lesiones cáusticas
233. VLP: a visual language for prototyping.
234. A general way to put time in Petri nets.
235. Design and implementation of PROSYT: a distributed process support system.
236. Software processes representation languages: survey and assessment.
237. A DLTS Investigation of VPE GaAs MESFETs.
238. Software processes as real-time systems: a case study using high-level Petri nets.
239. How to deal with deviations during process model enactment.
240. In vivo molecular imaging of myocardial angiogenesis using the alpha(v)beta3 integrin-targeted tracer 99mTc-RAFT-RGD.
241. Low-temperature mobility of photoexcited electrons inAlxGa1−xAs containingDXcenters
242. Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs
243. The influence of the DX centre C-V and I-V characteristics of Schottky barriers in n-type AlGaAs
244. Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells
245. Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1−xAs
246. The influence of the DX center on the capacitance of schottky barriers in n-type AlGaAs
247. Evidence for non-equilibrium free electron density in AlGaAs at low temperatures
248. A unified high-level Petri net formalism for time-critical systems
249. Software specialization via symbolic execution
250. Hydrogenation of GaAs during MBE Growth
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