819 results on '"Gessner, T."'
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202. Anodically-bondable LTCC substrates with novel nano-structured electrical interconnection for MEMS packaging
203. Quantum mechanical methods for the simulation of electronic transport through carbon nanotubes
204. Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma
205. Zr-based metallic glass as a novel MEMS bonding material
206. In situ high temperature synchrotron-radiation diffraction studies of silicidation processes in nanoscale Ni layers
207. Anwendung des feinfokussierten Ionenstrahles zur Fertigung mikromechanischer Bauelemente
208. Simulation of TaNx deposition by Reactive PVD
209. Hermetic thin film encapsulation of mechanical transducers for smart label applications
210. Development and evaluation of AuSi eutectic wafer bonding
211. Polymer lab-on-chip systems with integrated electrochemical pumps suitable for large-scale fabrication
212. Analysis of image quality for laser display scanner test
213. Thin film encapsulation technology for harms using sacrificial CF-polymer
214. Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuits
215. A MEMS friction vacuum gauge suitable for high temperature environment
216. Roughness improvement of the CoSi2/Si-interface for an application as buried silicide
217. Optimized fabrication of silicon nanofocusing x-ray lenses using deep reactive ion etching
218. Adjustable Force Coupled Sensor-Actuator System for Low Frequency Resonant Vibration Detection
219. Thin Filmencapsulation of microstructures using Sacrificial CF-Polymer
220. Different approaches to integrate patterned buried CoSi2 layers in SOI substrates
221. Different SiH4 treatments of CVD TiN barrier layers
222. Scaling down thickness of ULK materials for 65nm node and below and its effect on electrical performance
223. Conference organization
224. Application of micromechanical resonant structures for measuring the sealing of bonded sensor systems
225. Direct bonding with on-wafer metal interconnections
226. nBu3P-Silber(I)-β-Diketonate: Synthese, Gasphasenuntersuchungen und Verwendung als CVD-Precursoren
227. Me3SiCC–CMeCH2 copper(I) β-diketonates: Synthesis, solid state structure, and low-temperature chemical vapour deposition
228. Novel deep-blue emitting phosphorescent emitter
229. Tri-n-Butyl-Phosphan-Silber(I)-Komplexe mit Carboxylat-, Troponolat- bzw. N-Hydroxyphthalimid-Teilstrukturen; Synthese und Verwendung als Spin-On-Precursoren
230. In-process gap reduction of capacitive transducers
231. Contributions to the static dielectric constant of low-k xerogel films derived from ellipsometry and IR spectroscopy
232. Infrared spectroscopic investigations of the buried interface in silicon bonded wafers
233. Slot-antenna for autonomous sensor systems mounted on overhead power lines.
234. FEM simulation and its application in MEMS design.
235. Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems.
236. Development of the micro-mirror with large scaning angle using FE-based metallic glass thin film.
237. CVD TiN layers as diffusion barrier films on porous SiO2 aerogel
238. A novel three-axis AIM vibration sensor for high accuracy condition monitoring.
239. Eutectic wafer bonding for 3-D integration.
240. Micro/nano technologies towards smart systems integration.
241. ADVANCED SILICON MICROMACHINING
242. Ein- und zweikernige Kupfer(I)- und Silber(I)-Phosphan-Komplexe mitβ-Diketonato-Teilstrukturen
243. Analysis of image quality for laser display scanner test.
244. Nanofabrication of reactive structure for low temperature bonding.
245. Waferbond technologies and quality assessment.
246. A New Method for High-Rate Deep Dry Etching of Silicate Glass with Variable ETCH Profile.
247. Application of Higher Order Derivatives Method to Parametric Simulation of MEMS.
248. A Tunable Resonant Vibration Measurement Unit Based on a Micromachined Force Coupled Sensor-Actuator System.
249. Development of PECVD WNx ultrathin film as barrier layer for copper metallization
250. Parametric Finite Element Analysis for Reduced Order Modeling of MEMS.
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