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216. Hole-polar phonon interaction scattering mobility in chain structured TlSe0.75S0.25 crystals

Author

Qasrawi, A. F. and Gasanly, N. M.

Abstract

In this study, the electrical resistivity, charge carriers density and Hall mobility of chain structured TlSe0.75S0.25crystal have been measured and analyzed to establish the dominant scattering mechanism in crystal. The data analyses have shown that this crystal exhibits an extrinsic ptype conduction. The temperaturedependent dark electrical resistivity analysis reflected the existence of three energy levels located at 280 meV, 68 meV and 48 meV. The temperature dependence of carrier density was analyzed by using the single donor–single acceptor model. The carrier concentration data were best reproduced assuming the existence of an acceptor impurity level being located at 68 meV consistent with that observed from resistivity measurement. The model allowed the determination of the hole effective mass and the acceptor–donor concentration difference as 0.44m0and 2.2 × 1012cm–3, respectively. The Hall mobility of the TlSe0.75S0.25crystal is found to be limited by the scattering of charged carriers over the chain boundaries and the scattering of hole–polar phonon interactions above and below 300 K, respectively. The value of the energy barrier height at the chain boundaries was found to be 261 meV. The polar phonon scattering mobility revealed the highfrequency and static dielectric constants of 13.6 and 15.0, respectively. © 2009 WILEYVCH Verlag GmbH & Co. KGaA, Weinheim

Published
2009
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217. Low‐Temperature Raman Scattering Spectra of GaSexS1‐xLayered Mixed Crystals

Author

Gasanly, N. M. and Aydinli, A.

Abstract

Raman scattering has been used to study the vibrational spectra of GaSexS1‐xlayered mixed crystals at 10 K. We report the frequency dependencies of different modes on composition x, with particular emphasis on A′1(2)(A1g1) and A′1(4)(A1g2) intralayer compressional modes having low dispersion in the Brillouin zone. The appearance of additional bands is attributed to multimode behavior typically exhibited by mixed crystals of anisotropic compounds.

Published
2002
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218. Crystal Data, Photoconductivity and Carrier Scattering Mechanisms in CuIn5S8Single Crystals

Author

Qasrawi, A. F. and Gasanly, N. M.

Abstract

The X‐ray diffraction has revealed that CuIn5S8is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn5S8crystals are measured in the temperature range of 50‐400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of ∼1.35 eV at 0 K, a carrier effective mass of 0.2 m0, an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.

Published
2001
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220. Atomic chains and lattice vibration characteristics in A2IIIB3VI compounds with tetrahedral coordination of atoms

Author

Gasanly, N. M., Tagirov, V. I., and Khomutova, M. D.

Abstract

On the basis of the presence of atomic chains in A2IIIB3VI compounds having zincblende defect structure, a linear-chain model is used to calculate the lattice vibration frequencies. The agreement of the calculated and experimental frequencies is an indication of the applicability of the model and enables one to determine the motion of various atoms during the corresponding vibrations.

Published
1977
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221. Crystal Data, Electrical Resisitivity and Mobility in Cu3In5Se9and Cu3In5Te9Single Crystals

Author

Parlak, M., Erçeleb, Ç., Günal, İ., Özkan, H., Gasanly, N. M., and Çulfaz, A.

Abstract

X‐ray powder diffraction data were obtained for Cu3In5Se9and Cu3Te9, which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu3In5Se9, was identified to be n‐type with a room temperature resistivity of 3 × 103Ω·cm which decreases with increasing temperature. For T< 65 K impurity activation energy of 0.03 eV and for T> 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu3In5Te9exhibits p‐type conduction with a room temperature resistivity of 8.5 × 10−3Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.

Published
1997
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222. Voltage-current characteristics of polycrystalline (Bi,Pb)2Sr2Ca2Cu3O10 superconductor at different magnetic fields and temperatures

Author

Albiss, B. A., Böcük, H., Gasanly, N. M., and Özkan, H.

Abstract

The voltage-current characteristics of polycrystalline (Bi,Pb)2Sr2Ca2Cu3O10 superconductor were investigated at temperatures from 80 to 105 K under magnetic field up to 0.4 T. In magnetic field considerable broadening in the transition width occurs which depends on the processing conditions and microstructure of the sample. I–V data below Tc were fitted to a power law expression V ~ Iß to obtain ß. We have found that ß decreases rather rapidly with increase of magnetic field and temperature, in low magnetic fields and at temperatures quite below Tc, respectively. Similar behavior was observed for the variation of the critical current as a function of temperature and magnetic field. The ß values are found to change linearly as a function of critical current at relatively low values of Ic.

Published
1996
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227. Abstracts of papers deposited at VINITI

Author

Pozdeeva, �. V., primary, Ul'yanov, V. L., additional, Botaki, A. A., additional, Ivankina, M. S., additional, Grigor'ev, A. I., additional, Loginov, V. S., additional, Chakhlov, G. L., additional, Chakhlov, V. L., additional, Zudova, L. A., additional, Vorob'ev, S. A., additional, Kudrin, V. V., additional, Taratin, A. M., additional, Styrov, V. V., additional, Tyurin, Yu. I., additional, Shvets, G. N., additional, Shtan'ko, V. F., additional, Lisitsyn, V. M., additional, Perevertaev, V. D., additional, Tsogbadrakh, L., additional, Zapkov, V. T., additional, Shklyar, V. P., additional, Ogorodnikov, S. N., additional, Nevedomskii, A. V., additional, Gasanly, N. M., additional, Tagirov, V. I., additional, Shapovalov, V. N., additional, Belous, M. V., additional, Serdyukova, N. V., additional, Chlzhskaya, T. N., additional, Grigoruk, L. V., additional, Lel'chuk, L. Yu., additional, Khalikov, G. A., additional, Vaisburd, D. I., additional, Likhushin, Yu. B., additional, Smirnov, A. I., additional, Ainbinder, N. E., additional, Gachegov, Yu. N., additional, and Osipenko, A. N., additional

Published
1976
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235. Abstracts of papers deposited at VINITI

Author

Gorshenkov, V. N., primary, Morozov, D. F., additional, Gasanly, N. M., additional, Musaeva, L. G., additional, Sardarly, R. M., additional, Kuznetsova, R. T., additional, Fofonova, R. M., additional, Bashmakova, M. I., additional, Kotlyarevskaya, O. A., additional, Kuz'menko, G. I., additional, Levitan, L. Ya., additional, Khramtsov, G. I., additional, Shapko, A. V., additional, Zakharov, A. S., additional, Nikitinskii, V. A., additional, Vaisburd, D. I., additional, Rudamenko, I. P., additional, Matlis, S. B., additional, Masterov, V. F., additional, Samorukov, B. E., additional, Shtel'makh, K. F., additional, Chernovets, B. V., additional, Zharov, S. N., additional, Rudyak, V. M., additional, Perepechko, I. I., additional, Prokazov, A. V., additional, Tunin, M. S., additional, Tunina, M. I., additional, Andreeva, L. P., additional, Nazarova, G. V., additional, Khokhlov, S. Ya., additional, Chetverikov, V. M., additional, Kim, A. S., additional, Ainbinder, N. E., additional, Nyavro, V. F., additional, Egorushkin, V. E., additional, Nazhalov, A. I., additional, Popov, V. A., additional, Fadin, E. P., additional, Minaev, I. G., additional, Sharapov, V. M., additional, Arbuzov, M. P., additional, Kotlyar, B. I., additional, Yatsura, M. M., additional, Vasilina, E. S., additional, Romanyuk, N. A., additional, Zhdanov, V. A., additional, Polyakov, V. V., additional, Ferents, P. R., additional, Rozman, G. A., additional, Minaev, B. F., additional, Grigor'ev, A. I., additional, Bochvar, N. R., additional, Lysova, E. V., additional, Popov, V. I., additional, Popova, A. A., additional, Bashirov, E. M., additional, Bashirova, G. G., additional, Obukhov, V. V., additional, Masharov, S. I., additional, Shul'man, G. A., additional, Simakov, V. I., additional, Tukhfatullin, A. A., additional, Moroz, I. A., additional, Bryukhanov, A. A., additional, Nechiporenko, N. F., additional, Ivanin, V. S., additional, Ryabova, G. M., additional, Sokolenko, A. I., additional, Sokolenko, V. I., additional, Krylov, A. F., additional, Zakharov, I. S., additional, Petukhov, P. A., additional, Skorikov, V. M., additional, Akinfiev, P. P., additional, and Adrianov, V. M., additional

Published
1976
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246. Abstracts of papers deposited at VINITI

Author

Fesenko, V. M., primary, Olovyanishnikova, A. M., additional, Nikitina, N. V., additional, Dudarev, E. F., additional, Zimin, N. I., additional, Meshkov, A. G., additional, Shapovalov, V. N., additional, Yancharina, A. M., additional, Murav'ev, I. I., additional, Volkov, V. E., additional, Shkuryaev, P. G., additional, Lozanskii, �. D., additional, Prud'ko, N. I., additional, Boiko, L. M., additional, Bobyl', V. G., additional, Pugachev, S. I., additional, Basova, M. P., additional, Pavlov, N. I., additional, Zavadovskaya, E. K., additional, Ar'yanov, A. P., additional, Malyshkov, Yu. P., additional, Aizikov, B. Ya., additional, Styrov, V. S., additional, Kharitonov, A. V., additional, Sokolov, V. A., additional, Boyarshinov, L. M., additional, Bessonov, N. A., additional, Bashmakova, M. I., additional, Shcherbina, V. P., additional, Tishchenko, Yu. A., additional, Cherkasov, V. S., additional, Kon'shina, L. F., additional, Mirskaya, K. V., additional, Gakhramanov, N. F., additional, Gasanly, N. M., additional, Ismailov, I. M., additional, Andreev, S. D., additional, Ivlev, L. S., additional, Popova, S. I., additional, Pkhalagov, Yu. A., additional, Kozhin, D. I., additional, Sakash, G. S., additional, Rigina, I. V., additional, Gos'kov, P. I., additional, Emel'yanova, T. S., additional, Eozhukhova, G. N., additional, Rusin, L. I., additional, Sokolova, E. A., additional, Shelkovnikov, Yu. K., additional, Guts, A. K., additional, Arinshtein, �. A., additional, Gorelik, Ya. B., additional, and Grinshtein, Ya. D., additional

Published
1975
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