201. Electrically active point defects in n-type 4H¿SiC
- Author
-
J. P. Doyle, Niklas Keskitalo, Margareta K. Linnarsson, Nils Nordell, Paolo Pellegrino, Bengt Gunnar Svensson, J. L. Lindström, Adolf Schöner, and Universitat de Barcelona
- Subjects
Electronic structure ,Materials science ,Crystallography ,Condensed matter physics ,business.industry ,Cristal·lografia ,Wide-bandgap semiconductor ,General Physics and Astronomy ,Estructura electrònica ,Edge (geometry) ,Epitaxy ,Crystallographic defect ,Active point ,Cross section (physics) ,Semiconductor ,Position (vector) ,Atomic physics ,business - Abstract
An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ...
- Published
- 1998