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Herein, multiwalled carbon nanotube (MWCNT)/silicon nitride (Si3N4)/polyaniline (PANI) ternary composites are prepared. The preparation method involves attaching carboxyl groups to acid‐modified MWCNT surfaces and amino groups to Si3N4 surfaces modified using a silane‐coupling agent. Then they are combined to binary composites using the solvent‐thermal method. Finally, the ternary composites are prepared by coating PANI on the surface of MWCNT/Si3N4 composites in situ polymerization. The morphology and structure of these composites are characterized through X‐ray diffraction, Fourier‐transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, and X‐ray photoelectron spectroscopy. Results show that the reflection loss at 8.8 GHz reaches −42.57 dB when the feeding ratio of MWCNT:Si3N4:PANI is 3:20:40 and the corresponding effective absorption bandwidth reaches 4.06 GHz when the thickness is 3.5 mm. A conductive network with effective electron leaps is formed among MWCNT, Si3N4, and PANI, which increases the conductive loss of the composites. An abundant number of interfaces have formed in the composite materials and promoted dielectric loss. Multiple loss mechanisms and good impedance matching performance endow MWCNT/Si3N4/PANI with excellent microwave absorption performance, and the incorporation of Si3N4 enables the composites to exhibit satisfactory high‐temperature resistance. Thus, these performances render the composites promising materials to address increasing electromagnetic pollution, particularly at high temperatures. [ABSTRACT FROM AUTHOR]

Structural color, arising from the interaction between nanostructures and light, has experienced rapid development in recent years. However, high-order Mie resonances in dielectric materials often induce unnecessary sub-peaks, particularly at shorter wavelengths, reducing the vibrancy of colors. To address this, we have developed a multilayer dielectric metasurface based on silicon-rich silicon nitride (SRN), achieving expanded color gamut through precise refractive index matching and suppression of high-order resonances. This strategy introduces more design dimensions and can reduce the complexity of material deposition. It enables the generation of vibrant colors in a 3 × 3 array, with a resolution of approximately 25,400 dpi, demonstrating its potential applications in displays. [ABSTRACT FROM AUTHOR]

Tungsten-bronze-type material Ba6-3xRE8+2xTi18O54, (RE = rare earth elements) is an important microwave dielectric that has shown great promises for future miniaturization of microwave devices because of its high dielectric constant, low loss, and tunabilities, and there is still much room for improvement. With their proven predictive power, first-principles calculations may greatly help accelerate materials optimization by reducing or eliminating the expensive and time-consuming experimental trial-and-error process. However, microwave dielectrics such as the tungsten-bronze-type materials are rather complex systems with unit cells containing hundreds or thousands of atoms, making ab initio calculations prohibitively expensive. In this work, we propose an elemental-unit decomposition (EUD) technique that can drastically reduce the computational effort of predicting the properties of complex microwave dielectrics and demonstrate its accuracy and efficiency. Our approach facilitates first-principles prediction and design of complex microwave dielectric materials that would otherwise be extremely difficult. [ABSTRACT FROM AUTHOR]

Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective means to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van der Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS2 FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm²/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices. Improving the performance of 2D transistors is essential to enable their future application for beyond-silicon electronics. Here, the authors report a method to induce localized tensile strain in monolayer MoS2 transistors, leading to enhanced electron mobilities up to 185 cm2/Vs and an 8-fold increase of the on-state current densities. [ABSTRACT FROM AUTHOR]

Polypropylene (PP)‐based dielectric film capacitors cannot meet the rapid development requirements of electromagnetic energy equipment because of their low energy storage density (Ue). The development of new dielectric materials is hampered by the trade‐off between high energy storage properties and thin film processibility for capacitors. This study proposes a strategy to improve the comprehensive energy storage properties of PP films by reconciling the trade‐offs not only between their polarity and crystallinity but also between their energy storage and processing performance. In this approach, a trifluoroethyl methacrylate (TFEMA) modified PP film is fabricated at the kilogram scale. The TFEMA units regulate PP crystallization in the α‐phase, resulting in improved mechanical, dielectric, and energy storage performance. The optimal PP‐g‐TFEMA film exhibits a remarkable breakdown strength (Eb) of 865 MV m−1 and a record Ue of 8.2 J cm−3 at over 90% discharge efficiency. The promising thin film processibility, excellent self‐healing, and long‐term reliability of PP are finely preserved in the aluminum (Al) coated PP‐g‐TFEMA film. These findings present a novel avenue to significantly increase the Ue of film capacitors for long‐term service not only in academia but also in industry. [ABSTRACT FROM AUTHOR]

Work function is an essential material's property playing important roles in electronics, photovoltaics, and more recently, in nanophotonics. We have studied effects of organic, and inorganic dielectric materials on work functions of Au films in single layered, and multilayered structures. We found that measured work function of metallic surfaces can be affected by dielectric materials situated 10–100 nm away from the metallic surface. We have found that, (i) the glass underneath ~ 50 nm gold slab reduces the work function of gold, (ii) Rh590:PMMA increases the work function of a gold film deposited on top of the polymer, and (iii) reduces it if Rh590:PMMA is deposited on top of Au. (iv) With increase of the Rh590 concentration in PMMA, n, the work function first decreases (at n < 64 g/l), and then increases (at n > 64 g/l). (v) The work function of a Fabry–Perot cavity or an MIM waveguide is almost the same as that of single Au films of comparable thickness. The experimental results can be qualitatively explained in terms of a simple model taking into account adhesion of charged molecules to a metallic surface, and formation of a double layer of charges accelerating or decelerating electrons exiting the metal and decreasing or increasing the work function. [ABSTRACT FROM AUTHOR]

Electrostatic capacitors with ultrahigh energy‐storage density are crucial for the miniaturization of pulsed power devices. A long‐standing challenge is developing dielectric materials that achieve ultrahigh recoverable energy density Wrec ≥ 10 J cm−3 under moderate electric fields (30 ≤ E ≤ 50 kV mm−1). Herein, a specific high‐entropy strategy is proposed to modulate the phase structure and interfacial polarization of medium‐entropy base materials using linear dielectrics. This strategy ensures a sufficient polar phase and a high enough electric field for complete polarization, thereby achieving ultrahigh Wrec by enhancing polarization strength. The validity of this strategy is demonstrated in the (Na0.282Bi0.282Ba0.036Sr0.28Nd0.08)TiO3‐xCa0.7Bi0.2TiO3 (NBBSNT‐xCBT) (x = 0–0.15) system. The CBT‐modulated samples exhibit a polyphase structure of R3c, P4bm, and Pm‐3m with reduced remnant polarization (Pr). Additionally, the addition of CBT effectively suppresses interfacial polarization, enhancing the maximum polarization (Pmax). These factors significantly improve the value of ∆P = Pmax − Pr. As a result, an ultrahigh Wrec of 10.5 J cm−3 with a high‐efficiency η of 80.3% is obtained in the x = 0.1 sample under a moderate electric field of 45 kV mm−1 for the first time. This work paves the way for achieving superior energy‐storage performance under moderate electric fields. [ABSTRACT FROM AUTHOR]

Phototransistor using 2D semiconductor as the channel material has shown promising potential for high sensitivity photo detection. The high photoresponsivity is often attributed to the photogating effect, where photo excited holes are trapped at the gate dielectric interface that provides additional gate electric field to enhance channel charge carrier density. Gate dielectric material and its deposition processing conditions can have great effect on the interface states. Here, we use HfO2 gate dielectric with proper thermal annealing to demonstrate a high photoresponsivity MoS2 phototransistor. When HfO2 is annealed in H2 atmosphere, the photoresponsivity is enhanced by an order of magnitude as compared with that of a phototransistor using HfO2 without annealing or annealed in Ar atmosphere. The enhancement is attributed to the hole trapping states introduced at HfO2 interface through H2 annealing process, which greatly enhances photogating effect. The phototransistor exhibits a very large photoresponsivity of 1.1 × 107 A W−1 and photogain of 3.3 × 107 under low light illumination intensity. This study provides a processing technique to fabricate highly sensitive phototransistor for low optical power detection. [ABSTRACT FROM AUTHOR]

The burgeoning growth of the new energy vehicles and aviation industry has escalated the need for energy storage capacitors capable of stable operation in harsh environments. The advent of metal-polyimide complexes has illuminated a novel approach for preparing temperature-resistant capacitors. However, the general application of these metal-polyimide complexes is impeded by the high dielectric loss and low breakdown strength, consequences of main-chain coordination and excessive metal ions content. Herein, our study proposes a novel polyimide-Cu complex material (POP-Cu) predicated on side-chain-type pyridine-Cu coordination, utilizing the structural backbone PMDA-ODA of mature commercial PI (Kapton) with reliable performance. Owing to the high degree of freedom afforded by the side chain with suppressed relaxation activation energy and the long-range electron delocalization formed by d-π coordination, the dielectric constant of this material containing merely 2.7 mol% Cu increases from 3.25 (POPI) to 5.58, while maintaining a remarkably low dielectric loss of 0.0066. Meanwhile, this material exhibits a substantial DC breakdown strength of 436.2 MV·m−1 and a high energy density of 5.42 J·cm−3, coupled with superior mechanical and thermal properties. Even at 150 °C, it retains over 90% of its room-temperature energy density, demonstrating notable dielectric stability under high temperatures. These attributes underscore its promising application for capacitors operating in harsh environments. [ABSTRACT FROM AUTHOR]

Flexible pressure sensors are evolving towards higher precision, larger areas, multi-sensing capabilities, increased resolution, and integration, imposing greater demands on the fabrication processes of flexible sensor devices. This study proposes a fully printed fabrication process utilizing electric field-assisted 3D micro-nanojet printing technology to manufacture capacitive sensors. Additionally, it designs sensor simulation studies based on hemispherical structures, cubic structures, and various microstructure arrangement densities to guide the preparation of capacitive pressure sensors. By utilizing PDMS mixed with 10% graphene material to print the dielectric layer with microstructures and conductive silver adhesive to print the electrode layer, the all-printing process significantly enhances the fabrication efficiency of flexible capacitive pressure sensors. The fabricated sensor achieves a maximum sensitivity of 0.7826 kPa−1 with a response time of 90 ms and a recovery time of 50 ms. It exhibits excellent responsiveness and stability during 4000 cycle tests, validating that the flexible capacitive pressure sensor, based on micro-nano-3D printing, can enhance the fabrication efficiency of flexible capacitive sensors and deliver outstanding performance. [ABSTRACT FROM AUTHOR]

The graphite/Al2O3 composite was prepared using plasma spray technology, the material design, experimental methods, and process flow are introduced. The microstructure, chemical composition, and complex permittivity of the composite are investigated, and its performance to absorb electromagnetic waves is studied. The mechanism of interaction between chemical composition, microstructure, complex permittivity, and absorption performance is analyzed. Furthermore, a microwave absorber composed of graphite/Al2O3 and sheet resistance, and performance is discussed. The reflectivity of the composite coating with different periods and sizes and resistances is analyzed. The impedance and reflectivity of the designed absorber that contains sheet resistance are discussed, and its absorption mechanism is explained in detail. The results demonstrate that the microwave absorption performance of graphite/Al2O3 coating is enhanced by electromagnetic resonance of the sheet resistance. The designed absorber exhibits good wave‐absorbing performance and stability at the frequency of the 8.2–18 GHz range. When the sample thickness is 2.3 mm, the absorber achieves a reflection loss (RL) value of −16.8 dB at 9.8 GHz and a wide effective absorption bandwidth (EAB) of 9.8 GHz. It means that the RL below −10 dB can be obtained in the whole X band and Ku bands. These results proved that the EAB can be tuned and enhanced by manipulating sheet resistance. [ABSTRACT FROM AUTHOR]

In this article, a transmissive three-frequency linearly polarized (LP) wave to circularly polarized (CP) wave metasurface is designed using all-dielectric materials. The structure is composed of a cross-shaped bar resonator and a split circular ring resonator. Numerical simulations results show that when the LP wave is incident on the device, it will be converted into nearly perfect right-handed circularly polarized (RHCP), left-handed circularly polarized and RHCP waves at 2.2146, 2.2467 and 2.3144 THz. The distribution of the conduct current, electric field and magnetic field are investigated to explain the physical mechanism. And the influence of the structural parameters and different incident angles for the structure are also studied in the end. [ABSTRACT FROM AUTHOR]

Niobium‐based oxides with wide bandgap and high dielectric constant show great potential in the applications of electronic and optoelectronic devices. Herein, the quasi‐van der Waals epitaxial growth of 2D α‐Nb2O5 nanosheets is reported, in which the growth promoter of sulfur and alkali halides has been utilized to catalyze the ultrathin 2D growth. The relatively low Gibbs free energy of α‐Nb2O5 nanosheets can drive the ultrathin growth down to 30 nm on the c‐Al2O3 substrate by the transformation of T‐Nb2O5 powder sources without any doping effects, demonstrating the diverse α‐Nb2O5 nanostructure morphologies. The as‐grown α‐Nb2O5 nanosheets are characterized with high crystalline quality and specific dominated growth plane, indicating the uniform dielectric properties. The metal–insulator–metal capacitor has confirmed the α‐Nb2O5 nanosheet with a high dielectric constant over 40. The dual promoters' growth design strategy provides a universal synthesis method for the 2D nonlayered dielectric materials. [ABSTRACT FROM AUTHOR]

This study introduces a novel biosensor utilizing silver (Ag)–dielectric–black phosphorus (BP) as the foundation to analyze the surface plasmon resonance (SPR) system for alcohol detection for the first time. Silver (Ag) is employed as a metallic layer in the Kretschmann configuration of the proposed sensor to induce the generation of surface plasmons. The present study employs dielectric materials, namely lithium titanate (LiTiO3), potassium tantalite (KTaO3), bismuth silicon oxide (BSO), and zinc selenide (ZnSe), to safeguard the Ag material from oxidation. Additionally, 2D material of BP is used to augment the detecting capacity of the sensor. This study focuses on the detection of ethyl alcohol (ethanol) and propanol alcohol. To analyze the sensor's performance, the transfer matrix method is used with the help of angular interrogation technique. The proposed sensor performance is significantly enhanced by achieving a maximum sensitivity of 277.63°⁄RIU, a detection accuracy of 4.37, and a quality factor of 97.06 RIU - 1 for the optimized sensor design. Hence, the sensor has significant utility in the field of biological applications. [ABSTRACT FROM AUTHOR]

This review presents the theory, configurations, and various applications of plasmonics in a variety of surface plasmon–based devices. It describes how light waves travel along the surface where metals and dielectrics meet, revealing the detailed reasons behind the phenomenon. Here, we have used the well-known Drude optical model, a widely accepted theoretical approach, to figure out how different materials behave by considering atoms as tiny vibrating dipoles. In this review, we have thoroughly looked at many aspects, all wrapped up in the concept of complex dielectric functions. We used Maxwell's equations customized for simple, non-magnetic materials to derive the above mentioned model, with the goal of helping to better grasp how surface plasmon polaritons are generated. In this research, we have organized the conditions needed for momentum matching by applying particular boundary conditions. Along with, we presented different techniques required for the generation of surface plasmon polaritons. We studied how metal and dielectric materials work together, by making comparisons to different optical devices along the way. Our main focus on the subject highlights the significant possibilities that this theory and research offers to various plasmonic applications. [ABSTRACT FROM AUTHOR]

Rare earth (RE)-doped BaTiO3 materials are promising dielectric materials for base-metal electrode multilayer ceramic capacitors (BME-MLCCs). Thus, the fundamental understanding of their effect on dielectric properties and reliability is crucial for further improvement of its performance. Herein, according to Preisach model, the dielectric stability of Dy and Y-doped BaTiO3 MLCCs with different particle sizes was investigated in this study. First order reversal curve (FORC) analysis showed that the reversible and irreversible domain wall motion of Dy-doped samples was weaker than that of Y-doped samples. Results also showed that the higher "shell" proportion of "core-shell" structure in Dy-doping was beneficial for improving the dielectric stability and insulation resistance degradation. The findings provide a comprehensive understanding and illustrate the significant role of the "core-shell" volume ratio in the tetragonality and domain wall motion in RE-doped BaTiO3 materials, and consequently laying an important ground work to obtain high dielectric stability and reliability in BME-MLCCs. [ABSTRACT FROM AUTHOR]

Silicophosphate, prepared from Tunisian siliceous sand, has been investigated as a potential oxide ion conductor. XRD and Rietveld refinement analyses confirm the formation of pure single-phase Si5P6O25 that crystallizes in the trigonal system with R-3 space group. The electrical conductivities and dielectric properties of this material have been studied using complex impedance spectroscopy from 10 to 106 Hz at a temperature range from 600 to 680 °C. The results show that the ionic conductivity σdc increases from 5.43 × 10− 5 S.cm− 1 at 600 °C to 0.23 × 10− 3 S.cm− 1 at 680 °C with an activation energy of 1.33 eV. The frequency dependence of AC conductivity could be explained by Jonscher's power law. The dielectric constant's decrease with frequency indicates a region of dispersion resulting from a polarization process' relaxation. The simulation of the oxygen conduction using the Bond Valence Site Energy (BVSE) model shows the presence of four interstitial sites used with equilibrium sites to form a zigzag isosurface of oxygen migration. The calculated activation energy is about 1.43 eV. [ABSTRACT FROM AUTHOR]

Composite materials/structures are rapidly advancing, offering improved product efficiency, cost-effectiveness, and superior specific properties. These materials find increasing applications in corrosion resistance and load-carrying structures across industries such as aerospace, wind turbines, transportation, and medical equipment. Therefore, ensuring reliable non-destructive evaluation of composites is crucial to address safety concerns and minimise maintenance expenses. The microwave non-destructive evaluation (NDE) method is particularly well-suited for characterising the material properties of composites. In our study, we utilise a large flange open-ended rectangular waveguide (OERW) probe, measuring 152 mm x 152 mm, to assess the complex reflection coefficient of dielectric materials. This measurement enables the extraction of essential material parameters using a forward electromagnetic model combined with an optimised method. To enhance accuracy, we introduce an iterative conjugate gradient descent (CGD) optimiser with adaptive segmentation. This approach effectively avoids local minima and reduces disparities in integrand values, resulting in precise measurements of material properties. Our proposed method provides estimations of the dielectric constant within a range of 1 to 10 and accurately determines sample thickness with a controlled limit of 3% error across all samples. Furthermore, we observe that as the loss-factor value decreases, the error in calculating the loss-factor of samples increases, which is supported by numerical analysis. [ABSTRACT FROM AUTHOR]

We propose a photonic crystal-based cascaded micro ring resonator to increase the quality factor using the concept of two-dimensional constrained topological edge states. The topological features of the photonic crystal are used to acquire the increased quality factor by finite-difference time-domain (FDTD) numerical simulation. Two micro ring resonators with different band topologies that come together at an interface and are confined inside a slab of dielectric material give rise to a topological edge state. The transmission dropout issue arises whenever the quality factor is enhanced in a conventional photonic system, which can be improved remarkably by employing the present approach. As an application, the proposed topological edge state structure is used to increase the sensitivity and quality factor of the pressure sensor. In FDTD simulation, resonance wavelength shifts are employed to calculate the pressure of a system, while structural deformation and refractive index change are used as input parameters. The proposed structure is incredibly small and suitable for photonic integrated circuits. [ABSTRACT FROM AUTHOR]

Given the important role played by the valence state of the transition metal in determining material this paper investigates the effect of Fe2+ content on the structure and dielectric properties of garnet-structured high entropy oxides (Y 0.2 Eu 0.2 Er 0.2 Dy 0.2 Lu 0.2) 3 (Al 0·5 Fe 0.5) 5 O 12 through Fe2+ doping. The results of XPS and Mӧssbauer spectra showed that the Fe2+ content in the tetrahedron increased with Fe2+ doping. With increasing Fe2+ content, the dielectric constants gradually increased, and the maximum dielectric constant reached 2.78 × 104 at 100 Hz under 30 °C. The analysis of the AC impedance spectrum and electrical conductivity revealed that the difference between the activation energy of grain boundary and grain conductivity resulted in increased dielectric constants of the samples. In addition, the doping of Fe2+ increased the maximum magnetization of the samples. This work provides a new idea for designing giant dielectric materials and magnetic materials with a high entropy strategy. [ABSTRACT FROM AUTHOR]

Due to the demands of miniaturization, weight reduction and green development for electronic devices, development of lead-free dielectric ceramic capacitors with high recoverable energy density (W rec) and energy storage efficiency (η) attracts much attention. To this end, (1- x)[0.75(Na 0.5 Bi 0.5)TiO 3 -0.25SrTiO 3 ]- x NdNbO 4 (abbreviated as: NBST- x NN) ceramics were fabricated through a solid-state reaction method. After adding NN, the non-perovskite phase of Bi 2 Ti 2 O 7 (BTO) with low dielectric constant (ε r) and loss (tan δ) is generated. Finite element software (COMSOL) was used to explore the influence of the BTO phase on breakdown strength (E b). The simulation result indicates that the BTO phase with a low ε r concentrates a larger local electric field (LEF), and thus weakens the LEF loading in the main perovskite phase, which is beneficial for enhancing E b. Moreover, NN doping significantly decreases the oxygen vacancy concentration in NBST ceramics, which plays a key role in improving E b. On the other hand, as NN content increases, the hysteresis of the polarization (P)-electric field (E) loops is substantially suppressed, and the polarization saturation is delayed, which can be ascribed to the appearance of the BTO phase having a linear dielectric characteristic and to the enhanced fluctuations of composition and charge by NN doping. Benefitting from the above factors, the optimal energy storage performance (ESP) with a W rec of 4.14 J/cm3 and an η of 90 % is obtained in NBST-0.08NN ceramics. Meanwhile, the ESP of NBST-0.08NN ceramics shows good charge-discharge properties and thermal stability. In conclusion, these results demonstrate that NBST-0.08NN ceramics are promising candidates as environment-friendly dielectric capacitor materials. [ABSTRACT FROM AUTHOR]

Electrostrictive materials exhibit a strain that is proportional to the square of the induced polarization. In linear dielectrics where the permittivity is constant, this electromechanical strain is also proportional to the square of the electric field. However, under increasing amplitudes of the driving field, the electromechanical strain sometimes saturates; the electrostrictive coefficients therefore appear to depend on the amplitude of the electric field used to measure them. Here, a methodology showing that this apparent field dependence is a consequence of neglecting higher‐order electromechanical phenomena is presented. When these are taken into account, not only do the electrostrictive coefficients remain constant but the signs of the high‐order coefficients enable the prediction of the saturation behavior from a single measurement. This approach is illustrated on both classical and non‐classical (so‐called "giant") electrostrictors. [ABSTRACT FROM AUTHOR]

In this article, an F-shaped four-port multiple-input multiple-output (MIMO) antenna is designed and analyzed. In the designed antenna for achieving high isolation, we introduced a novel isolation technique that appears like plus-shaped wall placed in between the antenna elements. The antenna is designed on a low-cost FR-4 epoxy substrate with total dimensions of 0.61 $ \lambda _{0}\times 0.61\lambda _{0}\times 0.03\lambda _{0} $ λ 0 × 0.61 λ 0 × 0.03 λ 0 (31 mm × 31 mm × 1.58 mm) where $ \lambda _{0} $ λ 0 is the free space wavelength at 5.8 GHz and experimentally verified. This MIMO antenna design covers operating the range of frequencies 5.47–6.20 GHz ( $ |S_{11}| \lt - $ | S 11 | < − 10 dB) which provides a bandwidth of 730 MHz. In terms of performance, the proposed antenna achieves high isolation of $ \lt -45.52 $ < − 45.52 dB with an improved reflection coefficient of $ -30.44 $ − 30.44 dB, a peak gain of 3.77 dBi and a radiation efficiency more than 82% across the entire operating band. Moreover, the achieved MIMO diversity parameters of the proposed antenna are envelope correlation coefficient < 0.005, diversity gain $ \lt 9.99 $ < 9.99 dB, mean effective gain $ \lt -3 $ < − 3 dB and total active reflection coefficient $ \lt -10 $ < − 10 dB in the operating band of frequency. The simulated and measured results show a good agreement between them. Finally, after analyzing the performance of the proposed MIMO configuration, we can say that this antenna is suitable for C-band, WiMAX, Wireless-Fidelity (Wi-Fi), Wireless Local-Area Network (WLAN), Bluetooth and Industrial, Scientific, & Medical (ISM) bands applications. [ABSTRACT FROM AUTHOR]

In order to improve the surface flashover strength of the insulation materials and solve the problem that the relatively high price of CF4 restricts the large-scale application of fluorination modification of CF4 atmospheric pressure plasma jet (APPJ) in the industrial field, He/CF4/O2 APPJ with different O2 content is used to treat epoxy resin (EP) dielectric material. By analyzing the results of scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy, the influence of O2 content on the multiple characteristics of EP surface before and after APPJ treatment is studied. Flashover experiment is also carried out on EP surface before and after APPJ treatment. It is found that the addition of 0.1% O2 can increase the mature voltage of the EP surface by about 16.10% compared with untreated EP surface. It is concluded that the improvement of the surface flashover strength with a small amount of O2 (within 0.1%) is influenced by the surface roughness and chemical composition of the dielectric. The deposition effect of APPJ on EP surface is enhanced to increase the surface roughness and reaches the best at 0.1% O2, because the addition of excessive O2 will weaken the APPJ intensity. It is speculated that the creepage distance of the EP surface is increased to inhibit the formation of electron collapse and the content of electronegative fluorine and oxygen on the EP surface is increased under a small amount of O2 addition, resulting in the inhibition of the formation of surface flashover. [ABSTRACT FROM AUTHOR]

Dielectric resonator antennas (DRAs) use dielectric material as a resonator to accomplish high radiation efficiency and avoid severe conductor loss. The dielectric material that behaves as a resonator is plagued by a number of limitations, including strong cross-polarised (XP) radiation and difficulties integrating with any development platform. Yet, it also offers a lot of benefits, including compact size, lightweight, affordable price, and diversity in form, including cylindrical, rectangular, conical, and ring. A discussion of DRAs, covering DRA propagation modes, geometries, feeding mechanisms, and different bandwidth augmentation approaches, is presented. A stacked arrangement with two or more DRs has achieved the widest impedance bandwidth (BW). The perforated topology is a straightforward alternative for increasing the DRA's bandwidth while maintaining a small, discrete size. [ABSTRACT FROM AUTHOR]

Composite dielectric materials with different dielectric characteristics are crucial for energy storage devices. In this study, a composite material of 5 wt.% metal (M)/bentonite (Bento) (M = Cd, Cu, Fe, or Zn) was synthesized using a wet impregnation technique to examine the effect of metal incorporation in bentonite. X-ray diffraction, scanning electron microscopy, energy-dispersive x-ray analysis, and impedance analysis were carried out to investigate the structural, morphological, electrical, and dielectric properties of the samples. A low-frequency dielectric response provided evidence of dielectric relaxation, which was associated with local charge polarizations occurring at the grain (or particle) site. A reduction in the dielectric constant was observed in metal-doped composites, attributed to the variation in grain size and the resulting change in the dipole number per unit volume generated by doping. Interestingly, the AC conductivity dispersion decreased for dopants with a larger ionic radius, in line with qualitative expectations. Tight-binding calculations demonstrated that the changes in binding energy, hardness, and the positioning of the highest occupied molecular orbital and lowest unoccupied molecular orbital of Bento were responsible for the differences in dielectric properties resulting from the incorporation of different metals into Bento. Thus, our results demonstrate the successful metal doping-induced tunability of the dielectric and structural properties of Bento, with significant implications for its use as supercapacitor (optimal dopant is Fe, as it induces larger permittivity), and hence its polarizability. The lowest permittivity was achieved for Cd doping, suggesting its potential use for insulator applications. [ABSTRACT FROM AUTHOR]

This comprehensive review delves into the intricate realm of GaN-based metal–oxide–semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive analysis of their contemporary DC and radio-frequency (RF) performance. Despite familiar challenges in the instability of threshold voltage (VTH) observed in GaN MOSHEMTs, recent innovations in interface technologies, incorporating in situ SiNx and surface oxidation of (Al)GaN, have led to exceptional DC and dynamic performances, achieving stability in VTH by reducing surface states, minimizing interface traps, controlling surface potential, and enhancing interface quality. Adoption of high-κ dielectric materials is emphasized since they are indispensable, as they play a crucial role in improving the electrostatic control of the gate and reducing parasitic capacitance, and contribute to achieving low gate leakage, high gm, small VTH fluctuation, and small current collapse. The recent aspects of the AlGaN/GaN MOSHEMT devices are presented, and the impacts of structural breakthroughs are discussed. When compared to single-layer arrangements, the utilization of multilayer gate stacks can provide improved gate control and less leakage. Tailoring the electric field distribution and enhancing device performance for particular applications or operational conditions are made possible by engineering the gate stack arrangement. This review also discusses fabrication challenges and reliability issues in GaN-based MOSHEMTs, highlighting innovative manufacturing techniques and shedding light on ongoing research to address these challenges. By presenting a comprehensive overview of recent developments and emerging trends, this review aims to contribute valuable insights for researchers and practitioners in the dynamic and expanding field of GaN-based RF power electronics and sensing technologies. [ABSTRACT FROM AUTHOR]

In recent years, the demand for sustainable and degradable materials and electronic devices has increased significantly. Among a range of biodegradable polymers, poly(lactic acid) (PLA) is a good alternative to conventional petrol-based polymers because of its attractive mechanical properties and its easy processability. Recently, PLA has also been described as a promising dielectric material with piezoelectric and electret properties. We expect that PLA—after further optimization—will play an important role as a material for environmentally friendly sensors in the future, where first applications such as air filters and pressure sensors have already been proposed. However, degradation under normal ambient conditions is very slow, and an accelerated and controllable degradation process is highly desirable for any type of PLA-based sensors. Enzymatic hydrolysis with embedded enzymes has been proposed as an approach to accelerate and control degradation. In this work, we investigate the properties of PLA in terms of dielectric and mechanical properties with a focus on its ability to store charges after the enzyme proteinase K (Trit. album) has been incorporated. Results reveal that proteinase K has a positive effect on the charge stability of solvent-cast PLA electrets after complete evaporation of the solvent. Furthermore, we observed a concentration-dependent acceleration of mass loss in a Tris-HCl buffer. A fast degradation within only one day occurred at a concentration of 6 wt% proteinase K. [ABSTRACT FROM AUTHOR]

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Traditional microwave heating faces challenges such as low efficiency and uneven heating, hindering its industrial application. Sweep frequency microwave heating is an effective way to improve uniformity. Larger cavity sizes result in better heating uniformity due to the generation of more resonant modes. However, in industrial applications, large cavities occupy significant space, making them less flexible and limiting their usability. This paper introduces a method to enhance sweep frequency microwave heating uniformity by adding a dielectric substance to cavity walls. First, the impact of increasing cavity size on the uniformity of sweep frequency microwave heating was studied, with the theoretical analysis showing that filling the cavity with dielectric materials can be equivalent to enlarging the cavity size. Subsequently, a multiphysics simulation model for sweep frequency microwave heating was established to analyze the effects of dielectric substance thickness and permittivity on heating uniformity. A high-efficiency, high-uniformity microwave multimode cavity was designed, and the accuracy of the simulation model was validated through experiments. Finally, the effects of sweep frequency range and load variations on the heating performance were analyzed. This method effectively addresses the uniformity issues in industrial microwave heating and aids in promoting the application of microwave energy in industry. [ABSTRACT FROM AUTHOR]

We have developed and simulated a high electron mobility transistor (HEMT) operating in the 5 nm regime. This HEMT uses hafnium oxide (HfO2), a high-k dielectric material, to create an undoped region (UR) beneath the gate. While the gate and undoped regions share equal thickness, the channel length differs. This innovative undoped under the gate dielectric HEMT design mitigates the maximum electric field (V) within the channel area, leading to a significant increase in drain current. The utilization of a high-k dielectric in the HEMT structure results in a saturated Ion current that is 60% higher compared to conventional structures. Specifically, we use an AlGaN/GaN/SiC-based HEMT with an intrinsic section below the gate, using HfO2 as the high-k dielectric substantial, for applications requiring high power and high-frequency power amplifiers. Compare this advanced HEMT design to conventional HEMTs and you will see improved conductivity, a greater drain current (Id), a 54% increase in transconductance (Gm), and a lower on-resistance (Ron). Additionally, advancements in the electric field in the Y direction are seen. This HEMT structure exhibits superior performance compared to alternative materials analyzed. The integration of AlGaN/GaN materials in HEMTs opens up extensive opportunities in the realms of radio frequency very large-scale integration (VLSI) and power electronics. [ABSTRACT FROM AUTHOR]

Some of the difficulties in numerical modeling of wireless communication devices for dosimetric evaluations arise from, e.g. incomplete documentation available for the numerical model, such as missing information on dielectric materials or the antenna matching circuitry. This study investigates the impact of these difficulties on the dosimetric results, such as the peak spatial average specific absorption rate at 900 and 1800 MHz and the peak spatial average power density at 28 GHz. The impact of dielectric losses, detuning, and mesh resolution is quantified using different generic and Computer Aided Design (CAD) based models of wireless transmitters. The findings show that the uncertainties of the numerical results due to detuning and mesh resolution can be reduced by normalization to the antenna feedpoint power instead of the feedpoint current. Uncertainties due to variations in dielectric losses can largely be compensated by normalization to the radiated power. [ABSTRACT FROM AUTHOR]

The object of this study is the processes of shielding electromagnetic radiation by building and facing materials. The research is aimed at solving the problem of ensuring the electromagnetic safety of people by improving the composition and structures of building and facing materials. Means for improving the electromagnetic safety of people under industrial and domestic conditions using non-homogeneous building materials have been determined. The shielding properties of reinforced concrete structures were studied. A methodology for increasing their efficiency depending on the amplitude-frequency characteristics of the radiation that needs shielding has been devised. The efficiency of electromagnetic radiation shielding by heterogeneous dielectric building materials based on cement concrete and basalt fibers was determined. It was established that shielding through the refraction of electromagnetic waves on inhomogeneities does not give an acceptable effect. The expediency of covering basalt fibers with a conductive substance to increase the protective properties of materials was substantiated. The protective properties of flat facing material with carbonyl iron content were studied. It has been shown that the properties of materials can be effectively controlled by adjusting the filler. The material’s transmission coefficient of ultra-high frequency electromagnetic radiation does not exceed 0.40, and the reflection coefficient – 0.25 with a filler content in the base of 14–15 % by volume. This makes it possible to simultaneously ensure the electromagnetic safety of people and the stable functioning of wireless communication devices. The advantage of the material is the low coefficients of reflection of electromagnetic waves, which does not lead to deterioration of the electromagnetic situation in other areas where people stay. It has been established that the addition of boron nitride to the facing material significantly increases the thermal insulation characteristics of the coating and contributes to the solution of energy saving problems. Adding a layer containing boron nitride to the material provides thermal conductivity coefficients of 0.030–0.031 W/m·K, which is better than known analogs [ABSTRACT FROM AUTHOR]

The low ionic conductivity of composite solid-state electrolytes due to the lack of free Li-ions and Li dendrite growth induced by the low transference number seriously hinder their application. Herein, we find that the giant dielectric ceramic of Li0.3Ti0.02Ni0.68O (LTNO) with ultra-high dielectric constant can greatly promote the dissociation of Li salt to generate abundant movable Li-ions and realize a high room-temperature ionic conductivity (4.09 × 10–4 S cm−1) as well as a low activation energy (0.16 eV). The oxygen vacancies on the surface of LTNO can effectively immobilize the anions to achieve a high Li transference number (0.61). Furthermore, the enhanced dielectric properties of the composite electrolyte induce homogenous Li plating/stripping to suppress the growth of Li dendrites. As a result, the Li||Li symmetric cells exhibit long lifespan of 2400 h and 1150 h at 0.1 mA cm−2 and 0.2 mA cm−2, respectively. The Li||LiNi0.8Co0.1Mn0.1O2 solid-state full cells show a high capacity retention of 83% after 430 cycles at 2C. This work highlights the critical role of high dielectric property and oxygen defects of fillers in composite solid-state electrolytes, and provides a demonstration for the application of giant dielectric materials in solid-state Li metal batteries. [ABSTRACT FROM AUTHOR]

Na2/3Mn2/3Fe1/3O2 layered oxides were synthesized using an enhanced solid-state synthesis method. Analysis via XRD confirmed the high purity of the prepared samples. Rietveld refinement of the crystal structure revealed that the synthesized materials adopt a rhombohedral system with the P63/mmc space group and P2 structure type. Calorimetric study confirms the presence of two-phase transitions at 393 K and 433 K. Vibrational investigation conducted using IR spectroscopy demonstrated the presence of an MO6 group. The dielectric properties of the material were evaluated over a frequency range of 0.1–107 Hz across temperatures ranging from 313 K to 453 K. The study of the real part of the dielectric permittivity using impedance spectroscopy suggested a high dielectric constant at low frequency and indicated the existence of both space charge and dipolar polarizations. The dielectric losses were analyzed according to the Giuntini law to extract the relaxation process. As a result, the module revealed two relaxations attributed to grain boundaries and grain relaxations. The frequency-dependent conductivity was interpreted following Jonscher's law. The variation of the power law exponent with temperature, corresponding to the grains s1 and s2, suggests that the conduction behavior of the P2-Na2/3Mn2/3Fe1/3O2 compound can be ascribed to the NSPT and CBH models. [ABSTRACT FROM AUTHOR]

Dielectric materials are foundational to our modern-day communications, defense, and commerce needs. Although dielectric breakdown is a primary cause of failure of these systems, we do not fully understand this process. We analyzed the dielectric breakdown channel propagation dynamics of two distinct types of electrical trees. One type of these electrical trees has not been formally classified. We observed the propagation speed of this electrical tree type to exceed 10 million meters per second. These results identify substantial gaps in the understanding of dielectric breakdown, and filling these gaps is paramount to the design and engineering of dielectric materials that are less susceptible to electrostatic discharge failure. [ABSTRACT FROM AUTHOR]

The multi-layer ceramic capacitor (MLCC) is prepared with Bi 1.5 MgNb 1.5 O 7 (BMN) pyrochlores, which has medium dielectric constant, large dielectric tunability, and especially the very small dielectric loss. The multilayer ceramic capacitors with Bi 1.5 MgNb 1.5 O 7 as the dielectric material are prepared by a tape-casting method. The dielectric constant of the BMN thick film was observed to be superior to that of the bulk material, indicating its potential application in electronic devices. The increase in dielectric constant during the preparation of multilayer ceramic capacitors was explained by investigating the interdiffusion between the ceramic thick films and the electrodes. The BMN thick films and Ag 0.7 /Pd 0.3 electrodes showed a dense microstructure and serial interfaces when sintering at 1050 °C for 1.5 h. The capacitor exhibited good temperature stability with a dielectric constant temperature coefficient of −249.94 ppm/°C, a relative dielectric constant of 216, and a dielectric loss of 0.00036. Provides insights for the development and optimization of high-performance dielectric tunable electronic device. [ABSTRACT FROM AUTHOR]

The formation of craters with the characteristics varying in the longitudinal and transverse directions at the laser microperforation of dielectric materials faces significant problems. In this work, a method have been proposed for the microstructuring of polystyrene as an example of polymeric materials involving laser photonic hooks and a low-cost cw laser. An optical fiber with an asymmetric conical tip has been used to form a photonic hook. Experiments demonstrate that curved microcraters with a shape depending on the power of laser radiation can be formed in a polymer substrate. [ABSTRACT FROM AUTHOR]

Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices. [ABSTRACT FROM AUTHOR]

Lead-free dielectric materials with excellent temperature stability are critical to meet ever-increasing demands for practical energy storage applications. Herein, good temperature stability was achieved in AgNbO 3 (AN) antiferroelectric ceramics through texture engineering by using NaNbO 3 (NN) as template. The 3% <001>-oriented NN modified AN (AN-3NN) textured ceramic showed an optimized grain orientation degree of ∼97% by using a templated grain growth technique. Interestingly, the AN-3NN textured ceramic possessed excellent temperature stability for both W rec and energy storage efficiency (η) with respective variations below 0.7% and 0.6% over a temperature range of 20–130 ºC, significantly higher than the non-textured one with respective variations around 7% and 14%. The increased grain orientation and decreased defect concentration for texture engineering contribute to the improved thermal stability. [ABSTRACT FROM AUTHOR]

Ba 1−x Sr x TiO 3 compounds are widely recognized as leading dielectric materials for tunable electronic applications. To expand their applicability and enable integration with polymers and metals, there is a need for low-temperature processing. Here we show that Cold Sintering Process (CSP) enables the fabrication of Ba 0.6 Sr 0.4 TiO 3 (BST) tunable dielectric ceramics, using Ba(OH) 2 ·8 H 2 O as a flux, at a temperature as low as 350 ºC. A dielectric permittivity with a low magnitude of ∼ 340 at 10 kHz, an electric-field tunability of 11%, and a thermal stability of ±7.1% over the temperature range of −90 ºC to 85 ºC are obtained for CSP BST that thus outperforms conventionally sintered BST ceramics. Significant decrease in the sintering temperature and enhanced dielectric performance respond to the current sustainability concerns related to energy efficiency and tunable device requirements. [ABSTRACT FROM AUTHOR]

With the increasing demand for high energy density and reliable dielectric capacitors in the field of power electronics, the research and manufacture of ceramic capacitor materials face significant challenges. At present, the traditional design ideas of dielectric ceramic materials have gradually formalized, and the system is complex and similar, whether it can design dielectric ceramic materials with high performance from a new viewpoint and explore the underlying mechanism remains a great challenge. This paper is based on ceramic capacitors with high energy storage performance, a series of high-entropy perovskite oxide ceramics designed by the concept of "entropy engineering" in the past five years are reviewed. The relationship between microstructure and macroscopic energy storage performance of materials is discussed based on the four effects of high-entropy ceramics. We predict that "entropy engineering" will be a successful strategy to break through the bottleneck of dielectric materials with high energy storage performance. This review guides the custom design of composition-structure-properties in high-entropy energy storage ceramics. [ABSTRACT FROM AUTHOR]

In this paper, the design of different dielectric advanced ceramic materials of RF windows for dual-band K-band and Q-band Gyro-TWT has been described. The design methodology of quartz, magnesium aluminate (MgAl2O4) and sapphire dielectric windows of operating TE01 mode for K-band and Q-band Gyro-TWT has been discussed. The simulation result predicts that these windows can handle 100 kW output power and return loss −58.5 dB and insertion loss −0.02 dB. This paper presents the electrical design and thermal analysis of K-band and Q-band dual-band Gyro-TWT amplifier. In the thermal analysis, the maximum temperature has been obtained at the centre of the dielectric disc. The electro-mechanical analysis has also been carried out on the different dielectric windows to achieve stress and displacement. A new type and unique advance transparent dielectric material magnesium aluminate (MgAl2O4) disc window has been used to improve the bandwidth performance of Gyro-TWT. [ABSTRACT FROM AUTHOR]

Benzocyclobutene‐functionalized polysiloxane microspheres with high sphericity and narrow size distribution on the nanometer (BPNS) and micrometer (BPMS) scale were prepared by the hydrolysis‐condensation reaction of benzocyclobutene vinyl trimethoxysiloxane (BCBVST) in the absence of surfactants, respectively. In this paper, we systematically investigate the relationship between hydrolysis conditions and BPNS/BPMS size. The results show that the method developed in this paper is characterized by simple manipulation, controllable microsphere size, and high repeatability. A possible mechanism for the formation of BPMS has been proposed. [ABSTRACT FROM AUTHOR]

Summary: A unique MIMO antenna with circular polarization characteristics that works similarly for skin, brain and heart phantoms has been proposed in this paper. The twin rectangular X‐shaped slot that serves as the basic structure of the proposed antenna is entirely planar and low‐profile but has a defective ground plane. For three different phantoms, the proposed antenna resonates at 2.4–2.45 GHz ISM band. With a dimension of 15.5×9×1.27mm3, the antenna exhibits compactness. Rogers RT/duroid 6010 substrate material has been used to fabricate the antenna in order to validate the designed antenna structure. Utilizing the high dielectric material for both substrate and superstrate, both skin‐mimicking gel and minced hog meat were employed in the experiment setup at 2.45 GHz ISM band. At ISM band, −28.3 dBi has been observed has realized peak gain. The obtained fractional bandwidth (FBW) and Axial Ratio Bandwidth (ARBW) values are 30.67% and 45%, respectively. Also, the maximum specific absorption rate (SAR) values are found to be in the acceptable limit regulated by IEEE. [ABSTRACT FROM AUTHOR]

Solid-oxide fuel cells offer numerous competitive advantages, including higher efficiency and low emissions of greenhouse gases. Material synthesis and selection of its components, including cathode, anode, electrolyte, and interconnect, play a vital role in obtaining the goal. La1-xSrxY0.75Co0.25O3 (x= 0.10, 0.20, 0.30, 0.40) perovskite material in the crystalline form of size 185nm to 245nm has been synthesized for its applications. Substituent increases the density value. The material exhibited weight loss on and above 400 oC temperature confirming the creation of oxygen vacancy on reduction of Y3+/Co3+, and the temperature expansion coefficient decreased with Sr2+ substitution. Impedance analysis of all the samples confirmed that the material is dielectric enough and conductivity increased with temperature, frequency, and doping content. The conductivity of the material was found to be more than 100 S/cm above 600 oC, and the activation energy of the material was found to be 0.19 eV for compositions 0.10 and 0.17 eV for 0.40. Observed parameters confirmed that the material synthesized is appropriate for the cathode component of the cell which can work at an intermediate temperature. [ABSTRACT FROM AUTHOR]

A review of dielectric materials with high (exceeding 10,000) values of relative permittivity is presented. Most of the compositions of these materials are based on systems that include ferroelectric and non-ferroelectric components, as well as solid solutions based thereon. Various approaches to increasing the permittivity of materials are considered, including doping, sintering atmosphere, grinding time, sintering temperature, and grain size. The effect of dopants and the synthesis method on the characteristics of capacitor ceramics that can be used in the low-frequency and high-frequency range are compared. [ABSTRACT FROM AUTHOR]

In this paper, a dual-layer plasmonic material-based electro-absorption modulator (EAM) is designed and investigated. Indium-tin-oxide (ITO), along with dielectric materials such as boron nitride (hBN) and hafnium dioxide (HfO2), is integrated into the Si waveguide for tuning the light propagating inside the device. The device showed enhanced performance in terms of extinction ratio (ER) = 34.48 dB/µm, the figure of merit (FOM) = 493, and insertion loss (IL) = 0.06 dB/µm for On-state at 1.55 µm wavelength. Also, the dual-state behavior of the EAM was observed and investigated. An IL of 22.22 dB/µm and 25.39 dB/µm was observed for the Off-On and On-Off configurations, respectively. A modulation frequency (${f_{3dB}}$ f 3 dB ) of 1.72 THz and 340 GHz was achieved for the EAM with hBN and HfO2 as the dielectric material. The investigated EAM with different dielectric materials has the potential to be integrated into future-generation photonic integrated circuits (PICs). [ABSTRACT FROM AUTHOR]

5/6G is anticipated to address challenges such as low data speed and high latency in current cellular networks, particularly as the number of users overwhelms 4G and LTE capabilities. This paper proposes a microstrip patch antenna array comprising six radiating patches and utilizing a microstrip line feeding technique to facilitate the compact design crucial for 5G implementation. ROGER 3003, chosen for its advanced and environmentally friendly features, serves as the dielectric material, ensuring suitability for 5G and B5G applications. The designed antenna, evaluated at a resonating frequency of 28.8 GHz with a −10 dB impedance bandwidth of 1 GHz, offers a high gain of 9.19 dBi. Its compact array, cost-effectiveness, and broad impedance and radiation coverage position it as a viable candidate for 5G and future communication applications. [ABSTRACT FROM AUTHOR]