524 results on '"Dayeh, Shadi A."'
Search Results
202. Advances in the synthesis of InAs and GaAs nanowires for electronic applications.
- Author
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Dayeh, Shadi A., Soci, Cesare, Bao, Xin-Yu, and Wang, Deli
- Subjects
NANOWIRES ,INDIUM arsenide ,GALLIUM arsenide ,NANOELECTRONICS ,NANOELECTROMECHANICAL systems ,SEMICONDUCTORS ,MOLECULAR structure ,OPTOELECTRONICS - Abstract
Summary: New materials and device concepts are in great demand for continual (opto)electronic device scaling and performance enhancement. Arsenide III-V semiconductor nanowires promise novel device architectures and superior (opto)electronic properties. Recent insights into the growth and optimal control over the InAs and GaAs nanowire morphology and distinguished key physical aspects in their growth are discussed. Direct correlation of individual nanowire crystal structure with their electronic transport properties is also presented. [Copyright &y& Elsevier]
- Published
- 2009
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203. Micromachined infrared bolometers on flexible polyimide substrates
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Dayeh, Shadi A., Butler, Donald P., and Çelik-Butler, Zeynep
- Subjects
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SEMICONDUCTOR wafers , *DETECTORS , *SEMICONDUCTORS , *COPPER oxide - Abstract
Abstract: Micromachined infrared sensor arrays have been fabricated on flexible polyimide substrates using a silicon wafer carrier during the fabrication process. These flexible polyimide substrates containing the micromachined infrared sensors were removed from the silicon wafer at the end of fabrication. The fabrication technique utilized surface micromachining of a bridge structure to form the thermal infrared (IR) sensors on flexible substrates. Semiconducting yttrium barium copper oxide YBCO was used as the radiation sensitive material. 1 × 10 sensor arrays of microbolometers were micromachined using a photo-definable polyimide sacrificial layer and characterized before and after removal of the substrate from the Si wafer carrier. The flexible infrared microsensors showed similar performance to microbolometers fabricated on rigid silicon substrates. The YBCO thermistors exhibited a temperature coefficient of resistance (TCR) of ∼-3.4%K-1 near room temperature. Responsivity and detectivity values as high as 6.1 × 104V/W and 1.2 × 108cmHz1/2/W, respectively, were measured in vacuum for a 40μm × 40μm microbolometer with 1μA bias. The lowest observed noise equivalent power was 4.1 × 10-11W/Hz1/2 while the lowest thermal time constant was 5.7ms. [Copyright &y& Elsevier]
- Published
- 2005
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204. Constructing 2D maps of human spinal cord activity and isolating the functional midline with high-density microelectrode arrays
- Author
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Russman, Samantha M., Cleary, Daniel R., Tchoe, Youngbin, Bourhis, Andrew M., Stedelin, Brittany, Martin, Joel, Brown, Erik C., Zhang, Xinlian, Kawamoto, Aaron, Ryu, Won Hyung A., Raslan, Ahmed M., Ciacci, Joseph D., and Dayeh, Shadi A.
- Abstract
Intraoperative neuromonitoring (IONM) is a widely used practice in spine surgery for early detection and minimization of neurological injury. IONM is most commonly conducted by indirectly recording motor and somatosensory evoked potentials from either muscles or the scalp, which requires large-amplitude electrical stimulation and provides limited spatiotemporal information. IONM may inform of inadvertent events during neurosurgery after they occur, but it does not guide safe surgical procedures when the anatomy of the diseased spinal cord is distorted. To overcome these limitations and to increase our understanding of human spinal cord neurophysiology, we applied a microelectrode array with hundreds of channels to the exposed spinal cord during surgery and resolved spatiotemporal dynamics with high definition. We used this method to construct two-dimensional maps of responsive channels and define with submillimeter precision the electrophysiological midline of the spinal cord. The high sensitivity of our microelectrode array allowed us to record both epidural and subdural responses at stimulation currents that are well below those used clinically and to resolve postoperative evoked potentials when IONM could not. Together, these advances highlight the potential of our microelectrode arrays to capture previously unexplored spinal cord neural activity and its spatiotemporal dynamics at high resolution, offering better electrophysiological markers that can transform IONM.
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- 2022
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205. Dynamical Imaging of Nickel Disilicide Nucleation and Step Flow Propagation in Defect-Engineered Si Nanowire
- Author
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Tang, Wei, Tom, S, Gusak, Andriy M, and, Ning Tu, and Dayeh, Shadi A
- Abstract
The Ni silicides and Si metal-semiconductor contacts are a vital element in the state-of-the-art commercial transistor devices. The latest source/drain (S/D) engineering technology designs the S/D crystal structure (e.g. intentional incorporation of stacking faults) that strains the channel to enhance device performance. Understanding the role of structural alternation, or defects, in Si-Ni reaction is therefore important in achieving precise control of the contact formation process at an atomic scale. Here, we present a study of Si-Ni reaction by lattice-resolved in-situ transmission electron microscopy (TEM) and found that presence of defects in Si can fundamentally change the silicide nucleation mechanism and growth behavior.
- Published
- 2014
206. In Situ TEM Study on Au Mediated Growth of NiSi2 in Si Nanowire: A Vapor-Liquid-Solid Analogy
- Author
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Tang, Wei, Tom, S, Liu, Xiaohua, and, Ning Tu, and Dayeh, Shadi A
- Abstract
The vapor-liquid-solid (VLS) mechanism is the prominent growth process for semiconductor nanowires (NWs), for example in Si NW growth. By forming Au-Si eutectic alloy, Si atoms can be sufficiently mobile in the liquid while finding their crystal sites before precipitating out into a solid phase. We report here an in-situ TEM study of new solid-liquid-solid (SLS) Ni disilicide phase growth mechanism in Si NWs that is analogous to the VLS mechanism in being a liquid-mediated growth, but is fundamentally different in terms of nucleation and mass transport. The new mechanism can be potentially used in synthesizing metallic nanowires without templates.
- Published
- 2014
207. Ultrafast optical microscopy on single semiconductor nanowires
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Betz, Markus, Elezzabi, Abdulhakem Y., Song, Jin-Joo, Tsen, Kong-Thon, Seo, Minah, Yoo, Jinkyoung, Dayeh, Shadi A., Picraux, Samuel T., Taylor, Antoinette J., and Prasankumar, Rohit P.
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- 2014
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208. Sharp-Switching High-Current Tunneling Devices
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Zaslavsky, Alexander, Wan, Jing, Le, Son T., Cristoloveanu, Sorin, Royer, Cyrille Le, and Dayeh, Shadi A.
- Abstract
Tunneling FETs (TFETs) offer the possibility of overcoming the 60 mV/dec subthreshold slope limit of conventional transistors and thereby providing sharp-switching logic devices. We discuss two approaches to increasing the current drive of tunneling devices, both implemented in the silicon-germanium heterostructure system. First, the bipolar-enhanced TFET (BET-FET) multiplies the gate-controlled interband tunneling current by the Si/Ge heterojunction bipolar current gain. Both vertical and planar versions have been simulated, with high ION > 1000 mA/mm accompanying low subthreshold swing over many decades of current. Second, the trigate Si/Ge heteronanowire TFET is based on shifting the tunneling junction from Ge in the on-state to Si in the off-state. Fabricated with a vapor-liquid-solid epitaxial Si/Ge hetero-nanowire channel and high-k dielectric trigate stack, the proof-of-concept prototype device exhibits reasonable ION, sub-60 mV/dec slope, as well as surprising backgating properties.
- Published
- 2013
209. One-Dimensional Semiconductor Heterostructures: Challenges and Opportunities
- Author
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Dayeh, Shadi A.
- Abstract
The boundary conditions for materials science and device physics in 1D semiconductors are dramatically different from their bulk counterparts. From a materials perspective, surface energetics dominates growth and structural integrity in 1D materials and helps extend their coherency limits for heterostructuring compared to bulk. From a device perspective, compositional changes along their 1D axis provide new control over charge transport, and their cylindrical structure allows for better electronic and optoelectronic device architectures. While we exploited interface engineering to provide new foundations for materials science in nanoscale 1D semiconductors and to perfect their crystal growth, we highlight below some of the opportunities made available by such advances and discuss the challenges that face their development a fundamental growth-device inter-relation level. We focus our discussion on bottom-up or vapor-liquid-solid 1D grown Ge/Si heterostructures.
- Published
- 2013
210. Human brain mapping with multithousand-channel PtNRGrids resolves spatiotemporal dynamics
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Tchoe, Youngbin, Bourhis, Andrew M., Cleary, Daniel R., Stedelin, Brittany, Lee, Jihwan, Tonsfeldt, Karen J., Brown, Erik C., Siler, Dominic A., Paulk, Angelique C., Yang, Jimmy C., Oh, Hongseok, Ro, Yun Goo, Lee, Keundong, Russman, Samantha M., Ganji, Mehran, Galton, Ian, Ben-Haim, Sharona, Raslan, Ahmed M., and Dayeh, Shadi A.
- Abstract
Electrophysiological devices are critical for mapping eloquent and diseased brain regions and for therapeutic neuromodulation in clinical settings and are extensively used for research in brain-machine interfaces. However, the existing clinical and experimental devices are often limited in either spatial resolution or cortical coverage. Here, we developed scalable manufacturing processes with a dense electrical connection scheme to achieve reconfigurable thin-film, multithousand-channel neurophysiological recording grids using platinum nanorods (PtNRGrids). With PtNRGrids, we have achieved a multithousand-channel array of small (30 μm) contacts with low impedance, providing high spatial and temporal resolution over a large cortical area. We demonstrated that PtNRGrids can resolve submillimeter functional organization of the barrel cortex in anesthetized rats that captured the tissue structure. In the clinical setting, PtNRGrids resolved fine, complex temporal dynamics from the cortical surface in an awake human patient performing grasping tasks. In addition, the PtNRGrids identified the spatial spread and dynamics of epileptic discharges in a patient undergoing epilepsy surgery at 1-mm spatial resolution, including activity induced by direct electrical stimulation. Collectively, these findings demonstrated the power of the PtNRGrids to transform clinical mapping and research with brain-machine interfaces.
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- 2022
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211. Growth of InAs Nanowires on SiO2Substrates: Nucleation, Evolution, and the Role of Au Nanoparticles
- Author
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A. Dayeh, Shadi, T. Yu, Edward, and Wang, Deli
- Abstract
We have studied the nucleation and growth of InAs nanowires (NWs) on SiO2/Si substrates by organometallic vapor-phase epitaxy (OMVPE). Through systematic characterization of InAs NW morphology as a function of V/III precursor ratio, precursor flow rates, growth temperature, growth time, and the presence/absence of Au nanoparticles, a number of significant insights into InAs NW growth using OMVPE have been developed. Specifically, we have found that (i) the growth of InAs NWs can be initiated from a single indium (In) droplet, (ii) Au nanoparticles (NPs) enhance group V precursor (AsH3) pyrolysis but are not necessary to nucleate growth, (iii) growth of InAs NWs on SiO2substrates occurs in the kinetically limited vapor−liquid−solid (VLS) growth regime, (iv) InAs NWs on SiO2films decompose at elevated temperatures even under significant AsH3overpressure, and (v) the V/III ratio is the growth-rate-limiting factor in the VLS growth of the InAs nanowires. Many of these findings on InAs NW growth can be generalized to and provide very useful information for rational synthesis of other III−V compound semiconductor NWs.
- Published
- 2007
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212. Preface
- Author
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Morral, Anna Fontcuberta I., Dayeh, Shadi A., and Jagadish, Chennupati
- Published
- 2015
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213. Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices.
- Author
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Oh, Hongseok and Dayeh, Shadi A.
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PIEZOELECTRIC devices , *SEMICONDUCTOR devices , *MECHANICAL energy , *ELECTRICAL energy , *3-D films , *PIEZOELECTRIC thin films , *ELECTROMECHANICAL technology , *THREE-dimensional display systems - Abstract
Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classify these piezoelectric devices according to the material dimensionality and present physics-based device models to describe and quantify the piezoelectric response for one-dimensional nanowires, emerging two-dimensional materials, and three-dimensional thin films. Different transduction mechanisms and state-of-the-art devices for each type of material are reviewed. Perspectives on the future applications of active piezoelectric devices are discussed. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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214. Syllable processing is organized in discrete subregions of the human superior temporal gyrus.
- Author
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Cleary, Daniel R., Tchoe, Youngbin, Bourhis, Andrew, Dickey, Charles W., Stedelin, Brittany, Ganji, Mehran, Lee, Sang Heon, Lee, Jihweean, Siler, Dominic A., Brown, Erik C., Rosen, Burke Q., Kaestner, Erik, Yang, Jimmy C., Soper, Daniel J., Han, Seunggu Jude, Paulk, Angelique C., Cash, Sydney S., Raslan, Ahmed M., Dayeh, Shadi A., and Halgren, Eric
- Subjects
- *
TEMPORAL lobe , *SPEECH , *CRANIOTOMY , *INFORMATION processing , *ELECTRODES - Abstract
Modular organization at approximately 1 mm scale could be fundamental to cortical processing, but its presence in human association cortex is unknown. Using custom-built, high-density electrode arrays placed on the cortical surface of 7 patients undergoing awake craniotomy for tumor excision, we investigated receptive speech processing in the left (dominant) human posterior superior temporal gyrus. Responses to consonant-vowel syllables and noise-vocoded controls recorded with 1,024 channel micro-grids at 200 μm pitch demonstrated roughly circular domains approximately 1.7 mm in diameter, with sharp boundaries observed in 128 channel linear arrays at 50 μm pitch, possibly consistent with a columnar organization. Peak latencies to syllables in different modules were bimodally distributed centered at 252 and 386 ms. Adjacent modules were sharply delineated from each other by their distinct time courses and stimulus selectivity. We suggest that receptive language cortex may be organized in discrete processing modules. The brain is anatomically organized in columns, but how these columns relate to function in the human association cortex is not clear. This study reveals that the human superior temporal gyrus is functionally organized in ~1.7-mm diameter modules that process language information. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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215. Implementation of High-Resolution Non-penetrating Cortical Thin-Film Electrodes in the Awake Craniotomy for Research
- Author
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Stedelin, Brittany, Cleary, Daniel, Paulk, Angelique, Bourhis, Andrew, Dayeh, Shadi, Tchoe, Youngbin, Halgren, Eric, and Raslan, Ahmed M.T
- Published
- 2020
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216. Surface Passivation and Carrier Collection in {110}, {100} and Circular Si Microwire Solar Cells.
- Author
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Ro, Yun Goo, Chen, Renjie, Liu, Ren, Li, Nan, Williamson, Theodore, Yoo, Jinkyoung, Sim, Sangwan, Prasankumar, Rohit P., and Dayeh, Shadi A.
- Subjects
SURFACE passivation ,NANOSTRUCTURED materials ,SILICON nitride ,SILICA ,ELECTRODES ,CRYSTAL orientation - Abstract
Surface recombination is a major bottleneck for realizing highly efficient micro/nanostructure solar cells. Here, parametric studies of the influence of Si microwire (SiMW) surface‐facet orientation (rectangular with flat‐facets, {110}, {100} and circular), with a fixed height of 10 µm, diameter (D = 1.5–9.5 µm), and sidewall spacing (S = 2.5–8.5 µm), and mesh‐grid density (1–16 mm−2) on recombination and carrier collection in SiMW solar cells with radial p‐n junctions are reported. An effective surface passivation layer composed of thin thermally grown silicon dioxide (SiO2) and silicon nitride (SiNx) layers is employed. For a fixed D of 1.5 µm, tight SiMW spacing results in improved short‐circuit current density (Jsc = 30.1 mA cm−2) and sparse arrays result in open‐circuit voltages (Voc = 0.552 V) that are similar to those of control Si planar cells. For a fixed S, smaller D results in better light trapping at shorter wavelengths and higher Jsc while larger D exhibits better light trapping at larger wavelengths and a higher Voc. With a mesh‐grid electrode the power conversion efficiency increases to 15.3%. These results provide insights on the recombination mechanisms in SiMW solar cells and provide general design principles for optimizing their performance. Parametric studies of the influence of surface facet crystal orientation, surface passivation, and array geometrical details on surface recombination and carrier collection in Si microwire solar cells with radial p‐n junctions are performed and their electrical and optical properties are analyzed. The results provide design guidelines in optimizing geometrical parameters for highly efficient microwire solar cells. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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217. Monolithic and Scalable Au Nanorod Substrates Improve PEDOT–Metal Adhesion and Stability in Neural Electrodes.
- Author
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Ganji, Mehran, Hossain, Lorraine, Tanaka, Atsunori, Thunemann, Martin, Halgren, Eric, Gilja, Vikash, Devor, Anna, and Dayeh, Shadi A.
- Published
- 2018
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218. (Invited) The Dynamics of Nickelidation for Self-Aligned Contacts to InGaAs Channels
- Author
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Chen, Renjie, Dai, Xing, Jungjohann, Katherine L, Mook, William Moyer, Nogan, John, Soci, Cesare, and Dayeh, Shadi
- Abstract
The rapid development of ultrascaled III−V compound-semiconductor devices requires the detailed investigation of metal-semiconductor contacts at the nanoscale where crystal orientation, size, and structural phase play dominant roles in device performance. Here, we report comprehensive studies on the solid-state reaction between metal (Ni) and ternary III−V semiconductor (In0.53Ga0.47As) nanochannels to reveal their reaction kinetics, dynamics, formed crystal structure, and interfacial properties. We observed size-dependent reaction kinetics that are dominated by Ni surface-diffusion at small channel dimensions. We also employed in-situheating in a transmission electron microscope (TEM) to record and analyze the atomic scale dynamics of contact reactions both in the cross-section and along the nanowire channel directions of InGaAs nanowires. Atomic models and nucleation models were introduced to depict the ledge formation and nucleation events. Deformation theory was applied to calculate the strain-induced shift in band-edge energies at the nickelide/InGaAs interface. These observations pave the way for engineered nanoscale contact to III-V transistors.
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- 2017
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219. Flexible inorganic light emitting diodes and transparent PEDOT:PSS/Parylene C for simultaneous optogenetics and electrocorticography (Conference Presentation)
- Author
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Mohanty, Samarendra K., Thakor, Nitish V., Jansen, E. Duco, Lee, Keundong, Ganji, Mehran, Hossain, Lorraine, Ro, Yun Goo, Lee, Sang Heon, Park, Jong-woo, Yoo, Dongha, Yoon, Jiyoung, Yi, Gyu-Chul, and Dayeh, Shadi A.
- Published
- 2017
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220. Engineering Heteromaterials to Control Lithium Ion Transport Pathways.
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Liu, Yang, Vishniakou, Siarhei, Yoo, Jinkyoung, and Dayeh, Shadi A.
- Published
- 2015
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221. Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire.
- Author
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Tanaka, Atsunori, Chen, Renjie, Jungjohann, Katherine L., and Dayeh, Shadi A.
- Subjects
SEMICONDUCTOR devices ,MATHEMATICAL models ,SEMICONDUCTORS ,BIOCHEMICAL substrates ,SUBMILLIMETER waves ,EPITAXIAL layers ,EPITAXY - Abstract
Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. We report here detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates and utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2' sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO
2 . We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures. [ABSTRACT FROM AUTHOR]- Published
- 2015
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222. Atomic Scale Analysis of the Enhanced Electro- and Photo-Catalytic Activity in High-Index Faceted Porous NiO Nanowires.
- Author
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Shen, Meng, Han, Ali, Wang, Xijun, Ro, Yun Goo, Kargar, Alireza, Lin, Yue, Guo, Hua, Du, Pingwu, Jiang, Jun, Zhang, Jingyu, Dayeh, Shadi A., and Xiang, Bin
- Subjects
RENEWABLE energy sources ,OXYGEN-evolving complex (Photosynthesis) ,NICKEL oxide ,HYDROGEN evolution reactions ,TRANSMISSION electron microscopy - Abstract
Catalysts play a significant role in clean renewable hydrogen fuel generation through water splitting reaction as the surface of most semiconductors proper for water splitting has poor performance for hydrogen gas evolution. The catalytic performance strongly depends on the atomic arrangement at the surface, which necessitates the correlation of the surface structure to the catalytic activity in well-controlled catalyst surfaces. Herein, we report a novel catalytic performance of simple-synthesized porous NiO nanowires (NWs) as catalyst/co-catalyst for the hydrogen evolution reaction (HER). The correlation of catalytic activity and atomic/surface structure is investigated by detailed high resolution transmission electron microscopy (HRTEM) exhibiting a strong dependence of NiO NW photo- and electrocatalytic HER performance on the density of exposed high-index-facet (HIF) atoms, which corroborates with theoretical calculations. Significantly, the optimized porous NiO NWs offer long-term electrocatalytic stability of over one day and 45 times higher photocatalytic hydrogen production compared to commercial NiO nanoparticles. Our results open new perspectives in the search for the development of structurally stable and chemically active semiconductor-based catalysts for cost-effective and efficient hydrogen fuel production at large scale. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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223. Semiconductor nanowires for future electronics : growth, characterization, device fabrication, and integration
- Author
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Dayeh, Shadi A.
- Subjects
- UCSD. Electrical engineering (Applied physics) (Discipline) Dissertations, Academic
- Abstract
This dissertation concerns with fundamental aspects of organo-metallic vapor phase epitaxy (OMVPE) of III-V semiconductor nanowires (NWs), and their structural and electrical properties inferred from a variety of device schemes. An historical perspective on the NW growth techniques and mechanisms, and an overview of demonstrated NW devices and their performance is summarized in chapter 1. In part I of the dissertation, OMVPE synthesis of InAs NWs on SiO₂/Si and InAs (111)B surfaces is discussed and their growth mechanism is resolved. Nucleation, evolution, and the role of Au nanoparticles in the growth of InAs NWs on SiO₂/Si surfaces are presented in chapter 2. Our results indicate that In droplets can lead to InAs NW growth and that Au nanoparticles are necessary for efficient AsH₃ pyrolysis. Chapter 3 discusses the key thermodynamic and kinetic processes that contribute to the InAs NW growth on InAs (111)B surfaces. Controversy in the interpretation of III-V NW growth is overviewed. Experimental evidence on the nucleation of InAs NWs from In droplets as well as the catalytic effect of Au nanoparticles on the InAs (111)B surfaces are described. NW cessation at high growth temperatures or at increased input molar V/III ratios is explained via a switch-over from vapor-liquid-solid (VLS) NW growth to vapor-solid thin film growth, in contrast to previous interpretation of vapor-solid-solid growth of III-V NWs. The substrate-NW adatom exchange is also treated, and experimental distinction of two NW growth regimes depending on this exchange is demonstrated for the first time. Our results indicate that when growing extremely uniform InAs NWs, solid-phase diffusion of In adatoms on the NW sidewalls is the dominant material incorporation process with surface diffusion lengths of ̃ 1 [mu]m. This understanding was further utilized for the growth of axial and radial InAs- InP heterostructure NWs. Polymorphism in III-V NW crystal structure is also discussed and growth conditions that lead to its observation are summarized. In part II of the dissertation, transport coefficient extraction, field-, diameter-, and surface state-dependent transport properties, and their correlation with crystal structure in InAs NWs is presented. Chapter 4 overviews the fabrication of top-gate InAs NW field-effect transistors (NWFETs), presents a model for accurate extraction of carrier mobility and carrier concentration from NWFETs, and demonstration of high electron mobility values in InAs NWs is illustrated. Chapter 5 describes the effects of surface states on transport properties and parameter extraction from InAs NWFETs. Mobility values in excess of 10000 cm²/V·s are obtained from measurements at slow gate voltage sweep rates at which charge balance in carrier capture and emission from interface states is achieved. Chapter 6 discusses scaling effects on the NW transport properties and provides experimental evidence of ballistic electron transport over length scales of ̃ 200 nm in InAs NWs at room temperature. Diameter-dependent mobility and free carrier concentration is observed and is attributed to Fermi energy pinning in the conduction band that leads to surface electron accumulation and enhanced surface scattering. Chapter 7 discusses direct correlation of InAs NW microstructures with their transport properties. Our results show that the distinct difference observed in the subthreshold characteristics between wurtzite and zinc blende InAs NWFETs is due to the presence of spontaneous polarization charges at the WZ }0001} plane interfaces with ZB segments. Numerical simulations point out that a polarization charge density of ̃ 10¹³ cm⁻² is required to surpass surface state induced electron accumulation and result in high Ion/Ioff ratios for the WZ NWFETs. Chapter 8 presents detailed experimental studies on the gate and source-drain field-dependent transport properties in InAs NWFETs. Mobility degradation at high injection fields is observed and is attributed to enhanced phonon scattering, which was verified through electro-thermal simulations and ex-situ transmission electron microscopy (TEM) and scanning TEM compositional studies on NWs exposed to high injection fields. Chapter 9 presents a novel scheme for III-V NW integration to the standard Si mainstream utilizing ion-cut induced transferred III-V layers to SiOv(2) /Si. Vertically integrated and electrically isolated III-V NWs on Si are achieved for the first time. Key challenges related to growth and implementation of vertical devices in future technology nodes are also summarized
- Published
- 2008
224. Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates.
- Author
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Tanaka, Atsunori, Choi, Woojin, Chen, Renjie, Liu, Ren, Mook, William M., Jungjohann, Katherine L., Yu, Paul K. L., and Dayeh, Shadi A.
- Subjects
- *
GALLIUM nitride , *BAND gaps , *CRYSTAL defects , *DIODES , *SUBSTRATES (Materials science) - Abstract
A major challenge in gallium nitride (GaN) vertical power devices and other large bandgap materials is the high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the heterointerface where there are both lattice and thermal mismatches. Here, we report the selective area growth (SAG) of thick GaN on Si and on the newly available Qromis Substrate Technology™ (QST) substrates that lead to a significant reduction of the defect densities to a level that is nearly comparable to that on native substrates by defect annihilation. We performed a parametric study of the electrical properties of the SAG GaN layers by fabricating and characterizing Schottky barrier diodes for SAG GaN layer thicknesses of 5, 10, 15, and 20 μm for GaN-on-Si, GaN-on-QST, and GaN-on-GaN diodes. While thicker layers led to a significant reduction in defect densities and improvement in the diode forward current characteristics, the GaN-on-QST diodes exhibited nearly similar characteristics to the GaN-on-GaN diodes. Further improvement in the device structure and/or SAG growth for GaN-on-Si is needed to achieve a comparable performance as the defect densities in the GaN-on-Si are comparable to that of GaN-on-QST substrates. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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225. Silicon epitaxy in nanoscale for photovoltaic applications
- Author
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Kobayashi, Nobuhiko P., Talin, A. Alec, Davydov, Albert V., Islam, M. Saif, Yoo, Jinkyoung, Nguyen, Binh-Minh, Dayeh, Shadi A., Schuele, Paul, Evans, David, and Picraux, S. T.
- Published
- 2014
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226. In Situ TEM Study on Au Mediated Growth of NiSi2in Si Nanowire: A Vapor-Liquid-Solid Analogy
- Author
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Tang, Wei, Picraux, S Tom, Liu, Xiaohua, Tu, King-Ning, and Dayeh, Shadi A
- Abstract
The vapor-liquid-solid (VLS) mechanism is the prominent growth process for semiconductor nanowires (NWs), for example in Si NW growth. By forming Au-Si eutectic alloy, Si atoms can be sufficiently mobile in the liquid while finding their crystal sites before precipitating out into a solid phase. We report here an in-situ TEM study of new solid-liquid-solid (SLS) Ni disilicide phase growth mechanism in Si NWs that is analogous to the VLS mechanism in being a liquid-mediated growth, but is fundamentally different in terms of nucleation and mass transport. The new mechanism can be potentially used in synthesizing metallic nanowires without templates.
- Published
- 2014
- Full Text
- View/download PDF
227. (Invited) Nanoscale Heterogeneous Reactions and Interfaces in Ge/Si and for III-V on Si Integrated Devices
- Author
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Dayeh, Shadi, Tang, Wei, Nguyen, Binh-Minh, Dai, Xing, Liu, Yang, Hwang, Yoontae, Liu, X. -H., and Chen, Renjie
- Abstract
In the pursuit of realizing sub-10 nm transistor channel lengths in homogenous and heterostructured materials, nanoscale defects and hetero-interfaces can significantly impact the formation of alloyed metal contacts conventionally used in CMOS devices. We utilize in-situ transmission electron microscopy to unveil new observations on the detailed formation of such alloys and interfaces at an atomic scale by capturing single nucleation events during the reaction of Ni with Si, Ge and Ge/Si core/shell nanowires and assess their resultant transistor performance. We then utilized the NiSi reaction to develop a novel heterogeneous integration process for III-V semiconductors on planar and patterned Ni electrodes in a fab-compatible process. We demonstrate the operation of the first InGaAs FinFETs on Si.
- Published
- 2013
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228. Ultra-short channel field effect transistors based on Ge/Si core/shell nanowires
- Author
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Razeghi, Manijeh, Nguyen, Binh-Minh, Liu, Yang, Tang, Wei, Picraux, S. Tom, and Dayeh, Shadi A.
- Published
- 2013
- Full Text
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229. In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length
- Author
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Dayeh, Shadi [Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering, Materials Science and Engineering Program, Dept. of NanoEngineering] (ORCID:0000000217561774)
- Published
- 2017
- Full Text
- View/download PDF
230. Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels
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Dayeh, Shadi [Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering and Materials Science and Engineering Program and Dept. of NanoEngineering] (ORCID:0000000217561774)
- Published
- 2017
- Full Text
- View/download PDF
231. Scalable Thousand Channel Penetrating Microneedle Arrays on Flex for Multimodal and Large Area Coverage BrainMachine Interfaces.
- Author
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Lee, Sang Heon, Thunemann, Martin, Lee, Keundong, Cleary, Daniel R., Tonsfeldt, Karen J., Oh, Hongseok, Azzazy, Farid, Tchoe, Youngbin, Bourhis, Andrew M., Hossain, Lorraine, Ro, Yun Goo, Tanaka, Atsunori, Kılıç, Kıvılcım, Devor, Anna, and Dayeh, Shadi A.
- Subjects
- *
BRAIN-computer interfaces , *EVOKED potentials (Electrophysiology) , *BRAIN mapping , *MICROFABRICATION , *ELECTROPHYSIOLOGY , *WHISKERS - Abstract
The Utah array powers cutting‐edge projects for restoration of neurological function, such as BrainGate, but the underlying electrode technology has itself advanced little in the last three decades. Here, advanced dual‐side lithographic microfabrication processes is exploited to demonstrate a 1024‐channel penetrating silicon microneedle array (SiMNA) that is scalable in its recording capabilities and cortical coverage and is suitable for clinical translation. The SiMNA is the first penetrating microneedle array with a flexible backing that affords compliancy to brain movements. In addition, the SiMNA is optically transparent permitting simultaneous optical and electrophysiological interrogation of neuronal activity. The SiMNA is used to demonstrate reliable recordings of spontaneous and evoked field potentials and of single unit activity in chronically implanted mice for up to 196 days in response to optogenetic and to whisker air‐puff stimuli. Significantly, the 1024‐channel SiMNA establishes detailed spatiotemporal mapping of broadband brain activity in rats. This novel scalable and biocompatible SiMNA with its multimodal capability and sensitivity to broadband brain activity will accelerate the progress in fundamental neurophysiological investigations and establishes a new milestone for penetrating and large area coverage microelectrode arrays for brain–machine interfaces. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
232. Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current
- Author
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Dayeh, Shadi [Univ. of California, San Diego, CA (United States). Graduate Program of Materials Science and Engineering and Dept. of Electrical and Computer Engineering]
- Published
- 2016
- Full Text
- View/download PDF
233. Ultra‐Sharp Nanowire Arrays Natively Permeate, Record, and Stimulate Intracellular Activity in Neuronal and Cardiac Networks.
- Author
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Liu, Ren, Lee, Jihwan, Tchoe, Youngbin, Pre, Deborah, Bourhis, Andrew M., D'Antonio‐Chronowska, Agnieszka, Robin, Gaelle, Lee, Sang Heon, Ro, Yun Goo, Vatsyayan, Ritwik, Tonsfeldt, Karen J., Hossain, Lorraine A., Phipps, M. Lisa, Yoo, Jinkyoung, Nogan, John, Martinez, Jennifer S., Frazer, Kelly A., Bang, Anne G., and Dayeh, Shadi A.
- Subjects
- *
NANOWIRES , *NANOELECTROMECHANICAL systems , *NEURAL circuitry , *ELECTROPHYSIOLOGY , *ELECTROPORATION , *NEURONS - Abstract
Intracellular access with high spatiotemporal resolution can enhance the understanding of how neurons or cardiomyocytes regulate and orchestrate network activity and how this activity can be affected with pharmacology or other interventional modalities. Nanoscale devices often employ electroporation to transiently permeate the cell membrane and record intracellular potentials, which tend to decrease rapidly with time. Here, one reports innovative scalable, vertical, ultrasharp nanowire arrays that are individually addressable to enable long‐term, native recordings of intracellular potentials. One reports electrophysiological recordings that are indicative of intracellular access from 3D tissue‐like networks of neurons and cardiomyocytes across recording days and that do not decrease to extracellular amplitudes for the duration of the recording of several minutes. The findings are validated with cross‐sectional microscopy, pharmacology, and electrical interventions. The experiments and simulations demonstrate that the individual electrical addressability of nanowires is necessary for high‐fidelity intracellular electrophysiological recordings. This study advances the understanding of and control over high‐quality multichannel intracellular recordings and paves the way toward predictive, high‐throughput, and low‐cost electrophysiological drug screening platforms. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
234. Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current.
- Author
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Sukrittanon, Supanee, Ren Liu, Breeden, Michael C., Pan, Janet L., Jungjohann, K. L., Tu, Charles W., and Dayeh, Shadi A.
- Subjects
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NITRIDES , *SOLAR cells , *MOLECULAR beam epitaxy , *TRANSMISSION electron microscopy , *QUANTUM efficiency - Abstract
We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
235. Considerations and recent advances in nanoscale interfaces with neuronal and cardiac networks.
- Author
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Tchoe, Youngbin, Lee, Jihwan, Liu, Ren, Bourhis, Andrew M., Vatsyayan, Ritwik, Tonsfeldt, Karen J., and Dayeh, Shadi A.
- Subjects
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BIOLOGICAL interfaces , *TISSUES , *NEURAL circuitry , *CHARGE injection , *NANOWIRES , *ELECTROPHYSIOLOGY - Abstract
Nanoscale interfaces with biological tissue, principally made with nanowires (NWs), are envisioned as minimally destructive to the tissue and as scalable tools to directly transduce the electrochemical activity of a neuron at its finest resolution. This review lays the foundations for understanding the material and device considerations required to interrogate neuronal activity at the nanoscale. We first discuss the electrochemical nanoelectrode-neuron interfaces and then present new results concerning the electrochemical impedance and charge injection capacities of millimeter, micrometer, and nanometer scale wires with Pt, PEDOT:PSS, Si, Ti, ITO, IrOx, Ag, and AgCl materials. Using established circuit models for NW-neuron interfaces, we discuss the impact of having multiple NWs interfacing with a single neuron on the amplitude and temporal characteristics of the recorded potentials. We review state of the art advances in nanoelectrode-neuron interfaces, the standard control experiments to investigate their electrophysiological behavior, and present recent high fidelity recordings of intracellular potentials obtained with ultrasharp NWs developed in our laboratory that naturally permeate neuronal cell bodies. Recordings from arrays and individually addressable electrically shorted NWs are presented, and the long-term stability of intracellular recording is discussed and put in the context of established techniques. Finally, a perspective on future research directions and applications is presented. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF
236. Microscale dynamics of electrophysiological markers of epilepsy.
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Yang, Jimmy C., Paulk, Angelique C., Salami, Pariya, Lee, Sang Heon, Ganji, Mehran, Soper, Daniel J., Cleary, Daniel, Simon, Mirela, Maus, Douglas, Lee, Jong Woo, Nahed, Brian V., Jones, Pamela S., Cahill, Daniel P., Cosgrove, Garth Rees, Chu, Catherine J., Williams, Ziv, Halgren, Eric, Dayeh, Shadi, and Cash, Sydney S.
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SPATIAL resolution , *EPILEPSY , *MICROELECTRODES , *ELECTROPHYSIOLOGY , *POLYSTYRENE - Abstract
• PEDOT:PSS microelectrodes with 50 µm spatial resolution uniquely reveal spatiotemporal patterns of markers of epilepsy. • High-resolution recording can track interictal discharges and reveal cortical domains involved in microseizures. • High frequency oscillations detected by microelectrodes demonstrate localized clustering on the cortical surface. Interictal discharges (IIDs) and high frequency oscillations (HFOs) are established neurophysiologic biomarkers of epilepsy, while microseizures are less well studied. We used custom poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) microelectrodes to better understand these markers' microscale spatial dynamics. Electrodes with spatial resolution down to 50 µm were used to record intraoperatively in 30 subjects. IIDs' degree of spread and spatiotemporal paths were generated by peak-tracking followed by clustering. Repeating HFO patterns were delineated by clustering similar time windows. Multi-unit activity (MUA) was analyzed in relation to IID and HFO timing. We detected IIDs encompassing the entire array in 93% of subjects, while localized IIDs, observed across < 50% of channels, were seen in 53%. IIDs traveled along specific paths. HFOs appeared in small, repeated spatiotemporal patterns. Finally, we identified microseizure events that spanned 50–100 µm. HFOs covaried with MUA, but not with IIDs. Overall, these data suggest that irritable cortex micro-domains may form part of an underlying pathologic architecture which could contribute to the seizure network. These results, supporting the possibility that epileptogenic cortex comprises a mosaic of irritable domains, suggests that microscale approaches might be an important perspective in devising novel seizure control therapies. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF
237. Engineering Heteromaterials to Control Lithium Ion Transport Pathways
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Dayeh, Shadi [Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering; Univ. of California, San Diego, CA (United States). Materials Science Program]
- Published
- 2015
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238. Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire
- Author
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Dayeh, Shadi [Univ. of California, San Diego, La Jolla, CA (United States)]
- Published
- 2015
- Full Text
- View/download PDF
239. Enhanced conversion efficiency in wide-bandgap GaNP solar cells
- Author
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Dayeh, Shadi [Univ. of California, San Diego, La Jolla, CA (United States)]
- Published
- 2015
- Full Text
- View/download PDF
240. Facet-selective nucleation and conformal epitaxy of Ge shells on Si nanowires
- Author
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Dayeh, Shadi [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of California San Diego, La Jolla, CA (United States)]
- Published
- 2015
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- View/download PDF
241. Controlling the Lithiation Behavior of Ge Nanowires via Surface Modifications: An in-situ Transmission Electron Microscopy Study.
- Author
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Dayeh, Shadi
- Published
- 2012
242. Correlation Structure in Micro-ECoG Recordings is Described by Spatially Coherent Components.
- Author
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Rogers, Nicholas, Hermiz, John, Ganji, Mehran, Kaestner, Erik, Kılıç, Kıvılcım, Hossain, Lorraine, Thunemann, Martin, Cleary, Daniel R., Carter, Bob S., Barba, David, Devor, Anna, Halgren, Eric, Dayeh, Shadi A., and Gilja, Vikash
- Subjects
- *
ELECTROPHYSIOLOGY , *MEDICAL technology , *CONDUCTING polymers , *MICROELECTRODES , *GEOMETRY - Abstract
Electrocorticography (ECoG) is becoming more prevalent due to improvements in fabrication and recording technology as well as its ease of implantation compared to intracortical electrophysiology, larger cortical coverage, and potential advantages for use in long term chronic implantation. Given the flexibility in the design of ECoG grids, which is only increasing, it remains an open question what geometry of the electrodes is optimal for an application. Conductive polymer, PEDOT:PSS, coated microelectrodes have an advantage that they can be made very small without losing low impedance. This makes them suitable for evaluating the required granularity of ECoG recording in humans and experimental animals. We used two-dimensional (2D) micro-ECoG grids to record intra-operatively in humans and during acute implantations in mouse with separation distance between neighboring electrodes (i.e., pitch) of 0.4 mm and 0.2/0.25 mm respectively. To assess the spatial properties of the signals, we used the average correlation between electrodes as a function of the pitch. In agreement with prior studies, we find a strong frequency dependence in the spatial scale of correlation. By applying independent component analysis (ICA), we find that the spatial pattern of correlation is largely due to contributions from multiple spatially extended, time-locked sources present at any given time. Our analysis indicates the presence of spatially structured activity down to the sub-millimeter spatial scale in ECoG despite the effects of volume conduction, justifying the use of dense micro-ECoG grids. [ABSTRACT FROM AUTHOR]
- Published
- 2019
- Full Text
- View/download PDF
243. Conductive electrospun polymer improves stem cell-derived cardiomyocyte function and maturation.
- Author
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Gonzalez, Gisselle, Nelson, Aileena C., Holman, Alyssa R., Whitehead, Alexander J., LaMontagne, Erin, Lian, Rachel, Vatsyayan, Ritwik, Dayeh, Shadi A., and Engler, Adam J.
- Subjects
- *
CONDUCTING polymers , *TISSUE scaffolds , *MESH networks , *CYTOSKELETAL proteins , *ELECTRIC conductivity , *HEART diseases - Abstract
Despite numerous efforts to generate mature human pluripotent stem cell-derived cardiomyocytes (hPSC-CMs), cells often remain immature, electrically isolated, and may not reflect adult biology. Conductive polymers are attractive candidates to facilitate electrical communication between hPSC-CMs, especially at sub-confluent cell densities or diseased cells lacking cell-cell junctions. Here we electrospun conductive polymers to create a conductive fiber mesh and assess if electrical signal propagation is improved in hPSC-CMs seeded on the mesh network. Matrix characterization indicated fiber structure remained stable over weeks in buffer, scaffold stiffness remained near in vivo cardiac stiffness , and electrical conductivity scaled with conductive polymer concentration. Cells remained adherent and viable on the scaffolds for at least 5 days. Transcriptomic profiling of hPSC-CMs cultured on conductive substrates for 3 days showed upregulation of cardiac and muscle-related genes versus non-conductive fibers. Structural proteins were more organized and calcium handling was improved on conductive substrates, even at sub-confluent cell densities; prolonged culture on conductive scaffolds improved membrane depolarization compared to non-conductive substrates. Taken together, these data suggest that blended, conductive scaffolds are stable, supportive of electrical coupling in hPSC-CMs, and promote maturation, which may improve our ability to model cardiac diseases and develop targeted therapies. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
- View/download PDF
244. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
- Author
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Dayeh, Shadi [Materials Science and Engineering Program, University of California San Diego, La Jolla CA 92093 USA, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla CA 92093 USA, Department of NanoEngineering, University of California San Diego, La Jolla CA 92093 USA] (ORCID:0000000217561774)
- Published
- 2017
- Full Text
- View/download PDF
245. Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation
- Author
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Dayeh, Shadi [Department of Electrical and Computer Engineering, Materials Science and Engineering Program, Department of NanoEngineering, University of California San Diego, La Jolla CA 92093 USA]
- Published
- 2017
- Full Text
- View/download PDF
246. Sub-millimeter ECoG pitch in human enables higher fidelity cognitive neural state estimation.
- Author
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Hermiz, John, Rogers, Nicholas, Kaestner, Erik, Ganji, Mehran, Cleary, Daniel R., Carter, Bob S., Barba, David, Dayeh, Shadi A., Halgren, Eric, and Gilja, Vikash
- Subjects
- *
BRAIN imaging , *MACHINE learning , *ELECTRODES , *NEUROLOGICAL disorders , *NEUROPHYSIOLOGY - Abstract
Electrocorticography (ECoG), electrophysiological recording from the pial surface of the brain, is a critical measurement technique for clinical neurophysiology, basic neurophysiology studies, and demonstrates great promise for the development of neural prosthetic devices for assistive applications and the treatment of neurological disorders. Recent advances in device engineering are poised to enable orders of magnitude increase in the resolution of ECoG without comprised measurement quality. This enhancement in cortical sensing enables the observation of neural dynamics from the cortical surface at the micrometer scale. While these technical capabilities may be enabling, the extent to which finer spatial scale recording enhances functionally relevant neural state inference is unclear. We examine this question by employing a high-density and low impedance 400 μm pitch microECoG (μECoG) grid to record neural activity from the human cortical surface during cognitive tasks. By applying machine learning techniques to classify task conditions from the envelope of high-frequency band (70–170Hz) neural activity collected from two study participants, we demonstrate that higher density grids can lead to more accurate binary task condition classification. When controlling for grid area and selecting task informative sub-regions of the complete grid, we observed a consistent increase in mean classification accuracy with higher grid density; in particular, 400 μm pitch grids outperforming spatially sub-sampled lower density grids up to 23%. We also introduce a modeling framework to provide intuition for how spatial properties of measurements affect the performance gap between high and low density grids. To our knowledge, this work is the first quantitative demonstration of human sub-millimeter pitch cortical surface recording yielding higher-fidelity state estimation relative to devices at the millimeter-scale, motivating the development and testing of μECoG for basic and clinical neurophysiology as well as towards the realization of high-performance neural prostheses. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF
247. Improved Performance of Zinc Oxide Thin Film Transistor Pressure Sensors and a Demonstration of a Commercial Chip Compatibility with the New Force Sensing Technology.
- Author
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Vishniakou, Siarhei, Chen, Renjie, Ro, Yun Goo, Brennan, Christopher J., Levy, Cooper, Yu, Edward T., and Dayeh, Shadi A.
- Subjects
- *
ZINC oxide thin films , *THIN film transistors , *PRESSURE sensors , *INDIUM gallium zinc oxide , *SENSOR arrays , *FLEXIBLE display systems - Abstract
A zinc oxide thin film transistor is developed and optimized that simultaneously functions as a transistor and a force sensor, thus allowing for scalable integration of sensors into arrays without the need for additional addressing elements. Through systematic material deposition, microscopy, and piezoelectric characterization, it is determined that an O2 rich deposition condition improves the transistor performance and pressure sensing characteristics. With these optimizations, a sensitivity of 4 nA kPa−1 and a latency of below 1 ms are achieved, exceeding the criteria for successful commercialization of arrayed pressure sensors. The functionality of 16 × 16 pressure sensor arrays on thin bendable glass substrates for integrated low weight and flexible touchscreen displays is fabricated and demonstrated and read‐out electronics to interface with the arrays and to record their response in real‐time are developed. Finally, the application of these sensors for mobile displays via their operation with an existing commercial touch integrated circuit controller is demonstrated. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF
248. Scaling Effects on the Electrochemical Performance of poly(3,4-ethylenedioxythiophene (PEDOT), Au, and Pt for Electrocorticography Recording.
- Author
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Ganji, Mehran, Elthakeb, Ahmed T., Tanaka, Atsunori, Gilja, Vikash, Halgren, Eric, and Dayeh, Shadi A.
- Subjects
- *
ELECTRIC stimulation , *CHARGE transfer , *NOISE control , *EVOKED potentials (Electrophysiology) , *HIGH resolution imaging - Abstract
Reduced contact size would permit higher resolution cortical recordings, but the effects of diameter on crucial recording and stimulation properties are poorly understood. Here, the first systematic study of scaling effects on the electrochemical properties of metallic Pt and Au and organic poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) electrodes is presented. PEDOT:PSS exhibits better faradaic charge transfer and capacitive charge coupling than metal electrodes, and these characteristics lead to improved electrochemical performance and reduced noise at smaller electrode diameters. PEDOT:PSS coating reduces the impedances of metallic electrodes by up to 18x for diameters <200 µm, but has no effect for millimeter scale contacts due to the dominance of series resistances. Therefore, the performance gains are especially significant at smaller diameters and lower frequencies essential for recording cognitive and pathological activities. Additionally, the overall reduced noise of the PEDOT:PSS electrodes enables a lower noise floor for recording action potentials. These results permit quantitative optimization of contact material and diameter for different electrocorticography applications. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
249. Scaling Effects on the Electrochemical Stimulation Performance of Au, Pt, and PEDOT:PSS Electrocorticography Arrays.
- Author
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Ganji, Mehran, Tanaka, Atsunori, Gilja, Vikash, Halgren, Eric, and Dayeh, Shadi A.
- Subjects
- *
ELECTRIC stimulation , *BRAIN stimulation , *TREATMENT of neurodegeneration , *MICROELECTRODES , *CHARGE injection - Abstract
The efficacy of electrical brain stimulation in combatting neurodegenerative diseases and initiating function is expected to be significantly enhanced with the development of smaller scale microstimulation electrodes and refined stimulation protocols. These benefits cannot be realized without a thorough understanding of scaling effects on electrochemical charge injection characteristics. This study fabricates and characterizes the electrochemical stimulation capabilities of Au, Pt, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS/Au), and PEDOT:PSS/Pt electrode arrays in the 20-2000 µm diameter range. This study observes substantial enhancement in charge injection capacity up to 9.5× for PEDOT:PSS microelectrodes compared to metal ones, and 88% lower required power for injecting the same charge density. These significant benefits are strongest for electrode diameters below 200 µm. Detailed quantitative analyses are provided, enabling optimization of charge injection capacity with potential bias and symmetric and asymmetric pulse width engineering for all diameters. These systematic analyses inform the optimal design for acute and potentially chronic implants in regards to safety and clinically effective stimulation protocols, ensure the longevity of the electrodes below critical electrochemical limits of stimulation, and demonstrate that the material choice and pulse design can lead to more energy efficiency stimulation protocols that are of critical importance for fully implanted devices. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
250. High density pillar arrays for high fidelity neural sensors
- Author
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Dayeh, Shadi [UC, San Diego]
- Published
- 2012
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