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The dependence of Pt film thickness and forming gas annealing on the interface fracture properties and interface composition of Ti/Pt bilayer gate electrode films on a HfO2 gate dielectric are reported. These fracture properties and composition results are directly compared to work function tuning behavior witnessed in metal-oxide semiconductor (MOS) capacitors fabricated from the same films. The interface fracture energy of the metal bilayer/gate dielectric interface is strongly dependent on thickness after a forming gas anneal but shows no thickness dependence in the as-deposited case. The flat-band voltage increases abruptly and then remains constant as the thickness of the Pt film is increased in the as-deposited case but varies gradually with increasing Pt thickness after a forming gas anneal. Angle-resolved x-ray photoelectron spectroscopy characterization of the resulting fracture surfaces confirms that Ti diffusion to the metal bilayer/gate dielectric interface is responsible for these effects. [ABSTRACT FROM AUTHOR]

This study demonstrates that ultraviolet (UV) radiation curing can control depth profiles of organosilicate films. Striking differences between the effects of monochromatic and broadband UV irradiation were observed. For the same as-deposited organosilicate film and cure duration, monochromatic radiation has a greater impact on film structure, elastic modulus, and fracture resistance, but also results in a greater degree of depth dependent properties. Oscillating elastic modulus through the film thickness was observed with force modulation atomic force microscopy. We present a new standing wave model that accurately predicts the resulting depth dependent stiffness variations considering changes in film shrinkage and refractive index in terms of curing time, and can further be used to account for initial film thickness dependence of UV curing and film absorption. Promising applications of the depth dependent UV curing to produce multifunctional ultralow-k layers with a single postdeposition curing process are discussed. [ABSTRACT FROM AUTHOR]

The effects of UV radiation curing on the glass structure and fracture properties were examined for a class of nanoporous organosilicate low dielectric constant films. A detailed characterization by nuclear magnetic resonance spectroscopy and Fourier transform infrared spectroscopy showed significant changes in the glass structure with increasing curing time, marked by the removal of terminal organic groups and increased network-forming bonds following the initial removal of porogen material. The higher degree of film connectivity brought about by an increased cure duration is demonstrated to significantly enhance adhesive fracture properties and to moderately improve cohesive fracture resistance. Explanations for the enhanced fracture behavior are considered in terms of the glass structure. The important role of crack path selection during adhesive and cohesive fracture processes is used to rationalize the observed behavior. [ABSTRACT FROM AUTHOR]

UV radiation curing has emerged as a promising postdeposition curing treatment to strengthen organosilicate interlayer dielectric thin films. We provide the evidence of film depth dependent UV curing which has important effects on through thickness mechanical and fracture properties. Force modulation atomic force microscopy measurements of the elastic modulus through the thickness of the films revealed evidence of periodic modulations of the glass stiffness which increased in magnitude with UV curing time. Furthermore, while significant increases in fracture energy were observed with UV curing time at the top of the organosilicate film, much lower increases were observed at the bottom. The increase in fracture energy with UV curing was film thickness dependent. The cohesive fracture resistance was less sensitive to UV curing. Possible explanations for the stiffness modulations through the film thickness involving UV light interference or phase separation by spinodal decomposition during the cure process are described. [ABSTRACT FROM AUTHOR]

Subcritical debonding of polymer/metal interfaces has important implications for the reliability of a range of modern device technologies containing thin layered structures, although the physics of the underlying crack-growth mechanisms are not well understood. This study investigates the effect of moisture on subcritical debonding at the interface between a silica-filled epoxy resin and a copper substrate electroplated with a nickel layer. Subcritical debond-growth rates in the range of 10[sup -5] to 10[sup -11] m/s were characterized as a function of the applied strain energy release rate, G[sub A]. Particular attention was given to the relationship between the debond tip strain energy release rate, G[sub tip], and the measured debond growth rates. The kinetics of interfacial debond growth were rationalized in terms of a stress-dependent chemical reaction and mass transport of the environmental species to the debond tip. The order of the chemical reaction with respect to water was determined and found to be surprisingly high (n∼5). In the transport-controlled region, the rate of debond growth was found to increase linearly with the partial pressure of water vapor. The effects of salient interface parameters including the peak stress in a cohesive zone used to model the fracture mechanism were explored. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A new standing wave model has shown that ultraviolet (UV) radiation curing can control depth profiles of organosilicate films. It can also be used for studying the initial film thickness dependence of UV curing and film absorption.

The effect of moisture on subcritical debonding at the interface between a silica-filled epoxy resin and a copper substrate electroplated with a nickel layer is investigated using a double cantilever beam specimen geometry. It was seen that debond path was found to be between the silica-filled epoxy polymer and the interaction layer that was formed between the polymer and NiO during the curing process.

Abstract: Photoactive perovskite semiconductors are highly tunable, with numerous inorganic and organic cations readily incorporated to modify optoelectronic properties. However, despite the importance of device reliability and long service lifetimes, the effects of various cations on the mechanical properties of perovskites are largely overlooked. In this study, the cohesion energy of perovskites containing various cation combinations of methylammonium, formamidinium, cesium, butylammonium, and 5‐aminovaleric acid is reported. A trade‐off is observed between the mechanical integrity and the efficiency of perovskite devices. High efficiency devices exhibit decreased cohesion, which is attributed to reduced grain sizes with the inclusion of additional cations and PbI2 additives. Microindentation hardness testing is performed to estimate the fracture toughness of single‐crystal perovskite, and the results indicated perovskites are inherently fragile, even in the absence of grain boundaries and defects. The devices found to have the highest fracture energies are perovskites infiltrated into a porous TiO2/ZrO2/C triple layer, which provide extrinsic reinforcement and shielding for enhanced mechanical and chemical stability. [ABSTRACT FROM AUTHOR]

A high‐throughput, single‐source laser scribing method exploiting a transparent conducting oxide (TCO) indirect liftoff mechanism is developed to produce serially interconnected perovskite solar modules. The TCO‐based indirect liftoff mechanism relies solely on laser absorption in the front transparent electrode material reducing thermal damage to the overlying layers and allowing for fast scribing speeds with low‐cost μs‐pulse duration fiber laser systems. Minimal resistive power losses are observed with the method compared to conventional ablative laser scribes, maintaining the power conversion efficiencies of small‐area devices (≈0.2 cm2) across significantly larger deposition areas (≈1 cm2). Demonstrating > 3 m s−1 processing speeds, TCO‐based liftoff provides the highest throughput laser scribing method for thin‐film photovoltaic devices produced on glass/TCO substrates, capable of processing large‐area perovskite solar modules at a manufacturing scale. [ABSTRACT FROM AUTHOR]