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Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust against time reversal invariant perturbations. This extraordinary property is notably exemplified by the absence of backscattering by nonmagnetic impurities and the weak antilocalization (WAL) of Dirac fermions. Breaking the time reversal symmetry (TRS) by magnetic element doping is predicted to create a variety of exotic topological magnetoelectric effects. Here we report transport studies on magnetically doped TI Cr-Bi2Se3. With increasing Cr concentration, the low temperature electrical conduction exhibits a characteristic crossover from WAL to weak localization (WL). In the heavily doped regime where WL dominates at the ground state, WAL reenters as temperature rises, but can be driven back to WL by strong magnetic field. These complex phenomena can be explained by a unified picture involving the evolution of Berry phase with the energy gap opened by magnetic impurities. This work demonstrates an effective way to manipulate the topological transport properties of the TI surface states by TRS-breaking perturbations., Comment: 4 figures

Based on first-principles calculations, we predict a half-metallic surface state in layered bulk insulator NaCoO2, with tunable surface hole concentration. The half-metallic surface has a single Fermi surface with a helical spin texture, similar to the surface state of topological insulators, but with the key difference of time-reversal symmetry breaking in the present case. We propose the realization of topological superconductivity and Majorana fermions when the half-metallic surface states are in proximity contact with a conventional superconductor., Comment: Published as Rapid Communications in Phys. Rev. B 84, 060408(R) (2011) [4 pages]

We introduce a new expression for the Z2 topological invariant of band insulators using non- Abelian Berry's connection. Our expression can identify the topological nature of a general band insulator without any of the gauge fixing problems that plague the concrete implementation of previous invariants. The new expression can be derived from the "partner switching" of the Wannier function center during time reversal pumping and is thus equivalent to the Z2 topological invariant proposed by Kane and Mele., Comment: 14 pages, 8 figures

To explain the unusual non-saturating linear magnetoresistance observed in silver chalcogenides, the quantum scenario has been proposed based on the assumption of gapless linear energy spectrum. Here we show, by first principles calculations, that $\beta$-Ag$_2$Te with distorted anti-fluorite structure is in fact a topological insulator with gapless Dirac-type surface states. The characteristic feature of this new binary topological insulator is the highly anisotropic Dirac cone, in contrast to known examples, such as Bi$_2$Te$_3$ and Bi$_2$Se$_3$. The Fermi velocity varies an order of magnitude by rotating the crystal axis., Comment: 4 pages, 4 figures

The discovery of superconductivity of about 30 K in iron selenides with very large magnetic moments simulates the examination of completing orders. Here we report a finding of pressure- induced suppression of the superconducting transition temperature Tc and enhancement of the temperature of the resistance hump TH through charge transfer between two iron sites with different occupancies. The activation energy for the electric transport of the high-temperature resistance is observed to go to zero at a critical pressure of 8.7 GPa, at which superconductivity tends to disappear and the semiconductor-to-metal transition takes place. Beyond the critical point, the resistance exhibits a metallic behavior over the whole temperature range studied. All these features indicate the existence of quantum criticality in iron-selenide superconductors., Comment: 5 pages, 5 figures

Haldane model is a noninteracting model for spinless fermions showing nontrivial topological properties. Effect of the electron-electron interaction on the topological phase poses an intriguing question. By means of the Hartree-Fock mean field, the exact diagonalization and the constrained-path Monte Carlo methods we mapped out the phase diagram of the interacting Haldane model. It is found that interaction breaks down the topological phase and drives the system into the charge-density-wave state. Sequence of the two transitions depends on the strength of next-nearest-neighbor hopping. Many-body Chern number and the charge excitation gap are used to characterize the topological transition., Comment: 4.5 pages, 6 figures

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement., Comment: 13 pages, 3 figures

Superconductivity can be realized in Eu-containing pnictides by application of chemical (internal) and physical (external) pressure, the intrinsic physical mechanism of which attracts much attention in physics community. Here we present the experimental evidence for the valence change of europium in compounds of EuFe2As1.4P0.6 exposed to ambient pressure and EuFe2As2 to high pressure by x-ray absorption measurements on L3-Eu edge. We find that the absorption spectrum of EuFe2As1.4P0.6 at ambient pressure shows clear spectra weight transfer from a divalent to a trivalent state. Furthermore, application of pressure on EuFe2As2 using a diamond anvil cell shows a similar behavior of valence transition as EuFe2As1.4P0.6. These findings are the first observation of superconductivity mechanized by valence change in pnictides superconductors and elucidate the intrinsic physical origin of superconductivity in EuFe2As1.4P0.6 and compressed EuFe2As2., Comment: 13 pages, 3 fifures

In this paper we give the full microscopic derivation of the model Hamiltonian for the three dimensional topological insulators in the $Bi_2Se_3$ family of materials ($Bi_2Se_3$, $Bi_2Te_3$ and $Sb_2Te_3$). We first give a physical picture to understand the electronic structure by analyzing atomic orbitals and applying symmetry principles. Subsequently, we give the full microscopic derivation of the model Hamiltonian introduced by Zhang {\it et al} [\onlinecite{zhang2009}] based both on symmetry principles and the ${\bf k}\cdot{\bf p}$ perturbation theory. Two different types of $k^3$ terms, which break the in-plane full rotation symmetry down to three fold rotation symmetry, are taken into account. Effective Hamiltonian is derived for the topological surface states. Both the bulk and the surface models are investigated in the presence of an external magnetic field, and the associated Landau level structure is presented. For more quantitative fitting to the first principle calculations, we also present a new model Hamiltonian including eight energy bands., Comment: 18 pages, 9 figures, 5 tables

Bi2Se3, Bi2Te3 and Sb2Te3 compounds are recently predicted to be 3-dimentional (3D) strong topological insulators. In this paper, based on ab-initio calculations, we study in detail the topological nature and the surface states of this family compounds. The penetration depth and the spin-resolved Fermi surfaces of the surface states will be analyzed. We will also present an procedure, from which highly accurate effective Hamiltonian can be constructed, based on projected atomic Wannier functions (which keep the symmetries of the systems). Such Hamiltonian can be used to study the semi-infinite systems or slab type supercells efficiently. Finally, we discuss the 3D topological phase transition in Sb2(Te1-xSex)3 alloy system., Comment: 8 pages,17 figures

The spin transport in a strongly interacting spin-pump nano-device is studied using the time-dependent variational-matrix-product-state (VMPS) approach. The precession magnetic field generates a dissipationless spin current through the quantum dot. We compute the real time spin current away from the equilibrium condition. Both transient and stationary states are reached in the simulation. The essentially exact results are compared with those from the Hartree-Fock approximation (HFA). It is found that correlation effect on the physical quantities at quasi-steady state are captured well by the HFA for small interaction strength. However the HFA misses many features in the real time dynamics. Results reported here may shed light on the understanding of the ultra-fast processes as well as the interplay of the non-equilibrium and strongly correlated effect in the transport properties., Comment: 5 pages, 5 figures

The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin Hall effect have been discovered in recent years. However, the quantized anomalous Hall (QAH) effect has not yet been realized experimentally. In a QAH insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically non-trivial electronic structure, leading to the quantized Hall effect without any external magnetic field. In this work, based on state-of-art first principles calculations, we predict that the tetradymite semiconductors Bi$_2$Te$_3$, Bi$_2$Se$_3$, and Sb$_2$Te$_3$ form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in sharp contrast to conventional dilute magnetic semiconductor where free carriers are necessary to mediate the magnetic coupling. Magnetic order in two-dimensional thin films gives rise to a topological electronic structure characterized by a finite Chern number, with quantized Hall conductance $e^{2}/h$. Experimental realization of the long sought-after QAH insulator state could enable robust dissipationless charge transport at room temperature., Comment: 19 pages, 5 figures

The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI., Comment: 15 pages, 4 figures

We use the time dependent variational matrix product state (tVMPS) approach to investigate the dynamical properties of the single impurity Anderson model (SIAM). Under the Jordan-Wigner transformation, the SIAM is reformulated into two spin-1/2 XY chains with local magnetic fields along the z-axis. The chains are connected by the longitudinal Ising coupling at the end points. The ground state of the model is searched variationally within the space spanned by the matrix product state (MPS). The temporal Green's functions are calculated both by the imaginary and real time evolutions, from which the spectral information can be extracted. The possibility of using the tVMPS approach as an impurity solver for the dynamical mean field theory is also addressed. Finite temperature density operator is obtained by the ancilla approach. The results are compared to those from the Lanczos and the Hirsch-Fye quantum Monte-Carlo methods., Comment: 9 pages, 12 figures, references updated, and some typos corrected

We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and ex situ transport measurements reveal that the as-grown Bi2Te3 films without any doping are an intrinsic topological insulator with its Fermi level intersecting only the metallic surface states. Experimentally, we find that the single-Dirac-cone surface state develops at a thickness of two quintuple layers (2 QL). Theoretically, we show that the interaction between the surface states from both sides of the film, which is determined by the penetration depth of the topological surface state wavefunctions, sets this lower thickness limit., Comment: 16 pages, 4 figures

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work, thickness dependent band structure of molecular beam epitaxy grown ultrathin films of Bi2Se3 is investigated by in situ angle-resolved photoemission spectroscopy. An energy gap is observed for the first time in the topologically protected metallic surface states of bulk Bi2Se3 below the thickness of six quintuple layers, due to the coupling between the surface states from two opposite surfaces of the Bi2Se3 film. The gapped surface states exhibit sizable Rashba-type spin-orbit splitting, due to breaking of structural inversion symmetry induced by SiC substrate. The spin-splitting can be controlled by tuning the potential difference between the two surfaces., Comment: 17 pages, 3 figures,1 table

We propose a Real-Space Gutzwiller variational approach and apply it to a system of repulsively interacting ultracold fermions with spin 1/2 trapped in an optical lattice with a harmonic confinement. Using the Real-Space Gutzwiller variational approach, we find that in system with balanced spin-mixtures on a square lattice, antiferromagnetism either appears in a checkerboard pattern or forms a ring and antiferromagnetic order is stable in the regions where the particle density is close to one, which is consistent with the recent results obtained by the Real-Space Dynamical Mean-field Theory approach. We also investigate the imbalanced case and find that antiferromagnetic order is suppressed there.

An impurity solver for the dynamical mean field (DMFT) study of the Mott insulators is proposed, which is based on the second order perturbation of the hybridization function. After carefully benchmarking it with Quantum Monte Carlo results on the anti-ferromagnetic phase of the Hubbard model, we conclude that this impurity solver can capture the main physical features in the strong coupling regime and can be a very useful tool for the LDA+DMFT studies of the Mott insulators with long range order., Comment: 12 pages, 8 figures

We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi$_2$Te$_3$ by using a low temperature scanning tunneling microscope. The interference fringes are caused by the scattering of the topological states off Ag impurities and step edges on the Bi$_2$Te$_3$(111) surface. By studying the voltage-dependent standing wave patterns, we determine the energy dispersion $E(k)$, which confirms the Dirac cone structure of the topological states. We further show that, very different from the conventional surface states, the backscattering of the topological states by nonmagnetic impurities is completely suppressed. The absence of backscattering is a spectacular manifestation of the time-reversal symmetry, which offers a direct proof of the topological nature of the surface states.

We investigate the crossover regime from three dimensional topological insulators $Bi_2Te_3$ and $Bi_2Se_3$ to two dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and non-trivial two dimensional behavior., Comment: 5 pages, 3 figures; 3 added references, an added note

We discover a pressure induced quantum phase transition from the superconducting state to the non-superconducting Kondo screened phase associated with a 2% volume collapse in CeFeAsO0.7F0.3 through measurements of high-pressure resistance, synchrotron x-ray diffraction, and x-ray absorption spectroscopy (XAS) in a diamond anvil cell. Our XAS data of Ce-L3 in CeFeAsO0.7F0.3 clearly show a spectral weight transfer from the main line to the satellite line after the transition, demonstrating the formation of the Kondo singlets under pressure in CeFeAsO1-xFx. Our results have revealed a physical picture of a pressure-induce competition between Kondo singlets and BCS singlets in the Ce-pnictide superconductors., Comment: 18 pages, 5 figures

We report the growth of atomically smooth, single crystalline Bi2Se3 thin films on Si(111) by using molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, X-ray photoelectron emission spectroscopy and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The film grows in a self-organized quintuple-layer by quintuple-layer mode, and atomically smooth film can be obtained with the thickness down to one quintuple-layer (~1nm)., Comment: 12 pages, 5 figures

We investigate the electronic structures of the alloyed Bi$_{1-x}$Sb$_x$ compounds based on first-principle calculations including spin-orbit coupling (SOC), and calculate the surface states of semi-infinite systems using maximally localized Wannier function (MLWF). From the calculated results, we analyze the topological nature of Bi$_{1-x}$Sb$_x$, and found the followings: (1) pure Bi crystal is topologically trivial; (2) topologically non-trivial phase can be realized by reducing the strength of SOC via Sb doping; (3) the indirect bulk band gap, which is crucial to realize the true bulk insulating phase, can be enhanced by uniaxial pressure along c axis. (4) The calculated surface states can be compared with experimental results, which confirms the topological nature; (5) We predict the spin-resolved Fermi surfaces and showed the vortex structures, which should be examined by future experiments., Comment: 8 pages, 11 figures

Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for $Sb_2Te_3$, $Sb_2Se_3$, $Bi_2Te_3$ and $Bi_2Se_3$ crystals. Our calculations predict that $Sb_2Te_3$, $Bi_2Te_3$ and $Bi_2Se_3$ are topological insulators, while $Sb_2Se_3$ is not. In particular, $Bi_2Se_3$ has a topologically non-trivial energy gap of $0.3 eV$, suitable for room temperature applications. We present a simple and unified continuum model which captures the salient topological features of this class of materials. These topological insulators have robust surface states consisting of a single Dirac cone at the $\Gamma$ point., Comment: 5 pages, 4 figures

We introduce in detail our newly developed \textit{ab initio} LDA+Gutzwiller method, in which the Gutzwiller variational approach is naturally incorporated with the density functional theory (DFT) through the "Gutzwiller density functional theory (GDFT)" (which is a generalization of original Kohn-Sham formalism). This method can be used for ground state determination of electron systems ranging from weakly correlated metal to strongly correlated insulators with long-range ordering. We will show that its quality for ground state is as high as that by dynamic mean field theory (DMFT), and yet it is computationally much cheaper. In additions, the method is fully variational, the charge-density self-consistency can be naturally achieved, and the quantities, such as total energy, linear response, can be accurately obtained similar to LDA-type calculations. Applications on several typical systems are presented, and the characteristic aspects of this new method are clarified. The obtained results using LDA+Gutzwiller are in better agreement with existing experiments, suggesting significant improvements over LDA or LDA+U., Comment: 20 pages, 11 figures

A fast impurity solver for the dynamical mean field theory(DMFT) named Two Mode Approxi- mation (TMA) is proposed based on the Gutzwiller variational approach, which captures the main features of both the coherent and incoherent motion of the electrons. The new solver works with real frequency at zero temperature and it provides directly the spectral function of the electrons. It can be easily generalized to multi-orbital impurity problems with general on-site interactions, which makes it very useful in LDA+DMFT. Benchmarks on one and two band Hubbard models are presented, and the results agree well with those of Exact Diagonalization (ED)., Comment: 29 pages, 14 figures

We report studies on pressure dependence of superconducting transition temperature (Tc) of LaFeAsO, LaFeAs(O0.5F0.5) and LaFeAs(O0.89F0.11) samples. In-situ resistance measurements under high pressure showed that the Tc of these three compounds increases with pressure initially, reaches a maximum value and then decreases with further increasing pressure, although the Tc at ambient pressure are different. The onset Tc of LaFeAsO is ~50 K at 1.5 GPa, which is the highest record in La-based oxypnicited system. The significant change in Tc induced by pressure is attributed to the orbital degeneracy and the electron density of state at the Fermi level., Comment: 13 pages, 4 figures

We outline a general mechanism for Orbital-selective Mott transition (OSMT), the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of identical width and correlation, provided a crystal field splits the energy levels in manifolds with different degeneracies and the exchange coupling is large enough to reduce orbital fluctuations. The mechanism relies on the different kinetic energy in manifolds with different degeneracy. This phase has Curie-Weiss susceptibility and non Fermi-liquid behavior, which disappear at a critical doping, all of which is reminiscent of the physics of the pnictides., Comment: Published version

We show, from first-principles calculations, that the hole-doped side of FeAs-based compounds is different from its electron-doped counterparts. The electron side is characterized as Fermi surface nesting, and SDW-to-NM quantum critical point (QCP) is realized by doping. For the hole-doped side, on the other hand, orbital-selective partial orbital ordering develops together with checkboard antiferromagnetic (AF) ordering without lattice distortion. A unique SDW-to-AF QCP is achieved, and $J_2$=$J_1/2$ criteria (in the approximate $J_1&J_2$ model) is satisfied. The observed superconductivity is located in the vicinity of QCP for both sides., Comment: 4 pages

We carry out \textit{ab initio} study of ground state phase diagram of spin-1/2 cold fermionic atoms within two-fold degenerate $p$-band of an anisotropic optical lattice. Using the Gutzwiller variational approach, we show that a robust ferromagnetic phase exists for a vast range of band fillings and interacting strengths. The ground state crosses over from spin density wave state to spin-1 Neel state at half filling. Additional harmonic trap will induce spatial separation of varies phases. We also discuss several relevant observable consequences and detection methods. Experimental test of the results reported here may shed some light on the long-standing issue of itinerant ferromagnetism., Comment: 5 pages, 4 figures

All the possible super-conducting order parameters for the LaOFeAs system are classified by their transformation under the complete crystal symmetry. The general forms of the super-conducting gap functions for each class are discussed. We find that the gap functions in such a multi-band system belong to three types, full gap, nodal type and finite {}``Fermi arc'' type. Possible physical consequences caused by different types of gap functions are also discussed., Comment: 12 pages, 1 figure

The Fermi surfaces (FS) of LaOFeAs (in $k_z$=0 plane) consist of two hole-type circles around $\Gamma$ point, which do not touch each other, and two electron-type co-centered ellipses around M point, which are degenerate along the M-X line. By first-principles calculations, here we show that additional degeneracy exists for the two electron-type FS, and the crucial role of F-doping and pressure is to enhance this orbital degeneracy. It is suggested that the inter-orbital fluctuation is the key point to understand the unconventional superconductivity in these materials., Comment: 4 pages, 5 figures

In the present paper, we propose the parity even,orbital singlet and spin triplet pairing state as the ground state of the newly discovered super-conductor $LaO_{1-x}F_xFeAs$.The pairing mechanism involves both the special shape of the electron fermi surface and the strong ferromagnetic fluctuation induced by Hund's rule coupling.The special behavior of the Bogoliubov quasi-particle spectrum may leads to "Fermi arc" like anisotropy super-conducting gap, which can be detected by angle resolved photo emission(ARPES).The impurity effects are also discussed., Comment: 4 pages, 3 figures

By first-principles calculations, we present a doping-dependent phase diagram of LaO{\it M}As ({\it M}=V--Cu) family. It is characterized as antiferromagnetic semiconductor around LaOMnAs side and ferromagnetic metal around LaOCoAs. Both LaOFeAs and LaONiAs, where superconductivity were discovered, are located at the borderline of magnetic phases. Extensive Fermi surface analysis suggests that the observed superconductivity is of electron-type in its origin. We discuss possible pairing mechanisms in the context of competing ferromagnetic phases found in this work and the ferromagnetic spin fluctuations., Comment: 4 pages, 1 table, 3 figures

The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg$_{1-y}$Mn$_{y}$Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the $Mn$ atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the $Mn$ atoms. This effect enables dissipationless charge current in spintronics devices., Comment: 5 pages, 3 figures. For high resolution figures see final published version when available

The ground states of Na$_x$CoO$_2$ ($0.00.6$ due to $a_{1g}$ van-Hove singularity near band top; (2) correlated non-magnetic metal without $e_g^{\prime}$ pockets for $0.3

Combining the density functional theory (DFT) and the Gutzwiller variational approach, a LDA+Gutzwiller method is developed to treat the correlated electron systems from {\it ab-initio}. All variational parameters are self-consistently determined from total energy minimization. The method is computationally cheaper, yet the quasi-particle spectrum is well described through kinetic energy renormalization. It can be applied equally to the systems from weakly correlated metals to strongly correlated insulators. The calculated results for SrVO$_3$, Fe, Ni and NiO, show dramatic improvement over LDA and LDA+U., Comment: 4 pages, 3 figures, 1 table

The quantum spin Hall (QSH) effect is the property of a new state of matter which preserves time-reversal, has an energy gap in the bulk, but has topologically robust gapless states at the edge. Recently, it has been shown that HgTe quantum wells realize this novel effect. In this work, we start from realistic tight-binding models and demonstrate the existence of the helical edge states in HgTe quantum wells and calculate their physical properties. We also show that 3d HgTe is a topological insulator under uniaxial strain, and show that the surface states are described by single-component massless relativistic Dirac fermions in 2+1 dimensions. Experimental predictions are made based on the quantitative results obtained from realistic calculations., Comment: 5 pages

We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include the effects of phase fluctuations, we show that the transition is first order at both zero and finite temperatures. On the Mott insulator side, there may be reentrance in phase transition. These features are consequences of the underlying transition between competing defect poor and defect rich phases. The relevance of the model and our results to supersolid 4He and cold bosonic atoms in optical lattices are discussed.

We propose a new type of Josephson junction formed by two superconductors close to the superconductor-Mott-insulator transition, one of which is doped with holes and the other is doped with electrons. A self-organized Mott-insulating depletion region is formed at the interface between two superconductors, giving rise to an asymmetric response of current to the external voltage. The collective excitations of the depletion region result in a novel phase dynamics that can be measured experimentally in the noise spectrum of the Josephson current., Comment: 5 pages