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Purpose: The purpose of the paper is to substantiate the new method of measuring the voltage-current characteristics of solar batteries based on the use of a digital oscilloscope and a special linear sweep device. Design/methodology/approach: To solve this problem, a test bench was developed on the basis of a solar radiation simulator. Findings: Practically it is proved that within the duration of a single pulse of 40 μs, it is possible to measure the voltage-current characteristics of an SB with a short-circuit current of up to 5.8 A. Research limitations/implications: The method is relevant for all types of solar batteries, but the measurements were carried out on serial samples of mono and polycrystalline silicon with a nominal output power of 30 to 140 W and a voltage of 12 V. Practical implications: The method can find its practical application in the development of an intelligent solar module. The technology of the intelligent module is based on the periodic removal of information on the operational parameters of the solar battery based on the measured voltage-current characteristic. Originality/value: Experimental confirmation of the effectiveness of the single-pulse measurement method of the voltage-current characteristic of a solar battery based on a linear current sweep.

We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.

Conductive properties of pressed nanocrystalline silver sulfide powder with grain size of 67 nm were studied. Presence of additional silver contacts causes increase of conductance. The amplitude of sample resistance decreases with increasing number of voltage switch cycles.Conductive properties of pressed nanocrystalline silver sulfide powder with grain size of 67 nm were studied. Presence of additional silver contacts causes increase of conductance. The amplitude of sample resistance decreases with increasing number of voltage switch cycles.

The physical processes occurring in junctions and weak links are encoded in their I–V characteristics. In this Chapter we discuss the main notions on the modeling of I–V curves with reference to the microscopic theory mostly applied to tunnel junctions, and to the Resistively Shunted Junction model, which provides appropriate tools to describe the enlarged family of weak links. Modeling I–V curves is the first step to define the transport mechanisms of a junction, its electrodynamics, and to understand its potential for applications in real circuits.

Solar energy is a vast energy resource that is largely underutilized today. While solar photovoltaics (PVs) have existed for many decades, organic photovoltaics (OPVs) are a relatively new solar cell technology. They possess a number of unique traits that may offer advantages over traditional PV designs in niche applications requiring low fabrication costs, mechanical flexibility, and transparency, among other characteristics. In this chapter, we present the basic working principles and characterization techniques of OPVs, including current voltage and quantum efficiency measurements, and discuss the mechanism of charge photogeneration. The excitonic nature of OPVs makes their operation fundamentally different from conventional inorganic PVs, and so we include a discussion of energy losses, including voltage losses, recombination, and resistance losses, specifically as they pertain to OPVs. Finally, we summarize promising directions for future research and discuss strategies that are utilized in current record-setting OPVs.

Iontově výměnné systémy, představované například iontově výměnnými membránami nebo iontově výměnnými částicemi, vykazují nelineární proudo-napěťové charakteristiky s třemi rozlišitelnými oblastmi. Tyto tři oblasti se nazývají podlimitní, limitní a nadlimitní. Každá z těchto oblastí reprezentuje jevy zodpovědné za transport iontů v daném proudovém režimu. V této publikaci sledujeme rozhraní mezi kationtově výměnným systémem a elektrolytem na iontově vyčerpané straně membrány v průběhu měření proudo-napěťové charakteristiky, pomocí fluorescence a optického pozorování. Ion-exchange systems represented, for example, by ion-exchange membranes or ion-exchange resin particles exhibit nonlinear current-voltage curves on which one finds three distinct regions. These regions are referred to as underlimiting, limiting and overlimiting ones. Each of these regions reflects proceeding phenomena responsible for the ion transport. It is known that all important transport processes take place on the depletion side of the ion-exchange systems. Here, we capture the situation at the interface between a cation-exchange system and an electrolyte on the depletion side as it develops during the measurement of a current-voltage curve by using fluorescent and optical observations. Our observations allow to describe qualitatively transport phenomena occurring in ion-exchange systems and to assign their onset to the particular points on the currentvoltage curve. We show that current-voltage curves for the studied systems, namely a single cation-exchange particle and a heterogeneous cation-exchange membrane, have a shape typical for ion-exchange systems, i.e. we can clearly recognize underlimiting, limiting and overlimiting region. Interestingly, the overlimiting region of both systems can be divided into two parts based on the slope of the currentvoltage curve in this region. We show that there is a qualitative and quantitative change in the developed electroconvection as the major mechanism governing the overlimiting current when the system transitions from the first part of the overlimiting region to the second one. This transition of electroconvection causes its mixing effect to change from local to global.

WOS: 000483376900010, We fabricated undoped and Cu doped TiO2 thin films by spin coating technique and employed the films as interfacial oxide layer between the Al and n-type Si to investigate the effect of temperature on the Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices. For that aim, the I-V measurements were performed in the range of 50 K-400 K by 50 K interval. The devices exhibited good rectifying behavior and thermal response in a wide range temperature. Ideality factor, barrier height and series resistance were calculated from I-V measurements for various temperatures by thermionic emission theory, Norde and Cheung methods and discussed in the details. The obtained results revealed that the device parameters are a strong function of the temperature. The interface states (N-ss) were affected by the changing of the temperatures. The Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices can be performed for wide range temperatures in various technological applications., Selcuk University BAP officeSelcuk University [16401044]; Selcuk UniversitySelcuk University, This work is supported by Selcuk University BAP office with Project Numbers 16401044. Authors would like to acknowledge the support of the Selcuk University for this research.

Re-evaluating methods in any business is essential, as it reinforces knowledge, improves methodologies and proves concepts can possibly be used in other applications. Eskom’s standard for placing reclosers does not focus on the financial costs and benefits thereof it only focusses to reach their performance targets. The purpose of this paper is to present a method to optimise the placement of reclosers on the distribution networks. Eskom could by focusing at the financial benefits of recloser placement improve their performance targets as well as save more money in fault conditions. The recloser placements will be done using a design to cost methodology. Formulas and matrix tables will be used to determine the maximum number of reclosers to be installed and used for placements on networks. The findings prove that placing reclosers on the network using this method will payback itself within one year. The work to be done in this paper will give another dynamic when focusing on recloser placements that include finances and technical parameters combined to place reclosers. Future studies can be done by combining recloser placements with other protection sensing equipment Fault Path Indicators or Current Voltage Monitors to isolate and find faults on the network. using abbreviations in the abstract.

A bulk heterojunction photovoltaic device was prepared based on the blend of conjugated poly[(2-methoxy,5-octoxy)-1,4-phenylenevinylene] (MOPPV)-inorganic PbSe quantum dots. We studied the device performance of the active layer with different mass ratio, and the device performance was best when PbSe wt% was 50% in the MOPPV-PbSe composites, as well as, the short-current density(J sc), open-circuit voltage(V oc ), fill factor(FF) and the power conversion efficiency(η) of the device were 3.661mA/cm2, 0.326V, 23% and 0.277%, respectively. Results indicated that PbSe quantum dots in composite was helped to exciton dissociation, charge transfer, and mobility.

Shottky diodes are one of the important components of electronic systems. Therefore, it is very important to determine the parameters of the diodes according to the area in which they will be used. One of the most important of these parameters is the current-voltage characteristic of the diode. In this study, firstly, current values of the Schottky diode in the voltage range of −2 V to +3 V are experimentally measured in the temperature range of 100–300 K. In order to estimate the current-voltage characteristic of Shottky diode at different temperatures, a multi-layer perceptron, a feed-forward back-propagation artificial neural network was developed using 362 experimental data obtained. In the artificial neural network where temperature (T) and voltage (V) values are selected as input variables and the hidden layer has 15 neurons, the current (I) value is obtained as output. The results obtained from the artificial neural network have been found to be in good agreement with the experimental data of the Schottky diode.

Mechanically flexible electronics are devices designed to operate under significant physical deformations such as bending, twisting, and stretching. While the materials systems and devices compatible with flexible substrates have been extensively studied, the mathematical framework for analysis remains identical to that of traditional planar silicon-based electronics. However, the non-planar and dynamic form factors desired from flexible electronics invalidate assumptions made in these models. For electronic devices to be predictable and ultimately commercially viable, they must be understood in any physical form. Here we employ the method of moments to calculate the capacitance between two electrical conductors of arbitrary shape. Combined with a model for source–drain current in thin-film transistors (TFTs) on the surface of a cylinder, we are able to calculate the current–voltage characteristics in curved TFTs as a function of bending angle. We demonstrate how deformations to device geometry are expected to lead to non-negligible changes in current–voltage characteristics. This work represents the first step towards a new framework for understanding and characterizing electronics with any physical form factor, ultimately bringing flexible electronics closer to commercial viability.

In this study, the space charge limited current transport model was applied to simulate the current density–voltage characteristics of two-layer NPB/Alq3 organic light emitting diodes (OLEDs). Several parameters for simulations were moderately adjusted, and the best set of parameters were obtained. Upon increasing the applied voltage, the junction temperature of the OLED increased, further influencing the transport of the carriers. When the junction temperature was used as the reference temperature in analysis of the relationship between voltage and temperature, the simulated current density–voltage characteristics were found to be very consistent with the experimental data.

Nowadays plasma technology can be used in various types of sectors in everyday life. The development of research on plasma technology provides many benefits in every sector, like industrial for material processing, environment for waste treatment, etc. This research aims to see the current-voltage impact on plasma discharge using Inverter Boost Kit 15 kV as the source of plasma, to find the energy needed to produce plasma and the distance of electrodes when the plasma occurs. Sensors of current and voltage were installed simultaneously on each side to measure the values during plasma discharges. Mathematical calculations were also performed to determine the electric charge and capacitance values of plasma. As the result based on the secondary current value, the discharge type of plasma is corona discharge, because the values reach the order of microampere. The capacitance value temperature value increase when batteries supply higher current to the electric motor, while voltage is decreasing. The capacitance value affected when the discharge gap change. The average discharge gap value is 5 mm, and when the discharge gap increase, the capacitance value will decrease.

The dark current characteristics of two series of bulk GaAsBi p-i-n diodes are analysed as functions of temperature and band gap. Each temperature dependent measurement indicates that recombination current dominates in these devices. The band gap dependence of the dark currents is also consistent with recombination dominated current for the devices grown at a common growth temperature, indicating that the presence of Bi does not directly adversely affect the dark currents. However, the devices grown at different growth temperatures exhibit a faster increase in dark current with decreasing device band gap, suggesting that a reduced growth temperature causes a reduction in minority carrier lifetime.

Understanding the metal/semiconductor interface is very significant for real-time optoelectronic device applications. In particular, the presence of interface states and other defects is detrimental to photodetector applications. In this study, the electrical transport properties of a pristine gallium nitride (GaN) nanorod (NR)-based Schottky diode are demonstrated at different temperatures by current–voltage characteristics in the range of 200–360 K. An enhancement in the Schottky barrier height (0.65 eV for hydrogen-passivated GaN NRs compared to 0.56 eV for pristine ones) is noticed. The effect of deep traps residing within the forbidden gap of GaN NRs is investigated using deep-level transient spectroscopy. Two deep defects are found at E C − 0.19 eV and E C − 0.31 eV in pristine GaN NRs; the E C − 0.31 eV defect peak is attributed to V Ga or nitrogen interstitials. After hydrogenation the peak at E C − 0.31 eV is suppressed and that at E C − 0.19 eV remains unchanged. The hydrogenated GaN NRs show a high photoresponse, which is nearly 2.83 times higher than that of pristine GaN NRs. The hydrogenated GaN NRs exhibit a photoresponsivity of 4.7 × 10−3 A W−1 and detectivity of 1.24 × 1010 Jones under UV illumination of λ = 382 nm. The enhanced performance is attributed to the deep defect passivation by hydrogenation along with the surface-state-free interface between the GaN NRs and metal contacts. The experimental results demonstrate the significance of hydrogen treatment use in the fabrication of GaN-based optoelectronic devices.

Plasma technology is one of the technologies that can help in various sectors. The development of research on plasma technology has several benefits, for instance to process certain materials or produce some nanomaterials in an industrial sector, to treat more waste in an environmental sector, to purify drinking water in a food sector, and various other sectors. This study is to observe characteristics of current and voltage on plasma discharge using 15 kV Boost Inverter device as a source of plasma generation and to find the energy needed or consumed in plasma discharge events between two electrodes. For measurement, current and voltage sensors are installed simultaneously on each side to measure the real-time value during plasma discharge events. Mathematical calculations are also carried out to identify the value of electric power and energy. As a result, based on secondary current values, the type of plasma release can be considered as corona plasma type, since the value reaches the order of microamperes (10−6 A) with several visible physical features. Based on calculations, the electrical power needed to produce plasma is in the range of 8.77 × 10−5 to 2.36 Watt, with an average consumption value of ± 0.43 Watt per second. For the value of electrical energy produced has the largest value which reaches a value ± 6.78 × 10−5 Joule with an average energy used per second of ± 6.72 × 10−6 Joules per second.

P-type semiconductors are indispensable for achieving complementary metal oxide semiconductor and integrated circuits based on two-dimensional (2D) semiconductors, and tungsten diselenide (WSe2) and molybdenum ditelluride (MoTe2) are the promising channel materials for PMOS. In this work, we report on the charge trapping effects on hysteretic behavior and field-effect mobility (μ FE) of the p-type WSe2 and MoTe2 FETs using fast pulsed current–voltage (I–V) measurements. The hysteresis is reduced by nearly 98% via ramped pulsed measurements, and μ FE is significantly enhanced via single pulse measurements by minimizing the charge trapping. Moreover, WSe2 FETs are found to be more susceptible to the charge trapping effects compared with MoTe2 FETs; WSe2 FETs exhibit more pronounced enhancement of μ FE and reduction of hysteresis. The intrinsic electrical characteristics of p-type 2D FETs under minimized charge trapping conditions can be investigated using the pulsed I–V characterizations.

In this study, methyl-green (MG) organic dye layer was formed on the front side of a n-Si semiconductor via low–cost drop coating method and twenty (20) Au/MG/n-Si/Ag diodes have been identically fabricated. The fundamental diode parameters such as barrier height (BH, ∅ b ) , ideality factor (IF, n) and series resistance (Rs) were determined from the current–voltage (I–V) measurements by using ln(I)–V characteristics, Cheung's functions and modified Norde's functions at room temperature. The values of BH and IF calculated from ln(I)-V were varied from 0.744 to 0.862 eV and from 1.10 to 1.64 for the 20 Au/MG/n-Si/Ag diodes, respectively. The experimental BH and IF distributions calculated from the ln(I)–V characteristics and Cheung's functions were fitted by a Gaussian distribution function. The statistical analysis yielded a mean IF value of 1.26 with standard deviation (σ) of 0.173 and a mean BH value of 0.817 eV with σ of 0.031 eV from the ln (I)–V characteristics, respectively. It was seen that there is an agreement between the BH values calculated from ln(I)-V and other two methods. The Rs obtained from Norde's function were compared with those from Cheung's functions.

In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current--voltage I(V) characteristics at room temperature and capacitance--voltage C(V) characteristics at various frequencies (10-800 kHz) and various temperatures (77-350oK). The I(V) characteristics show a double-barrier phenomenon, which gives a low and high barrier height (phiLbn=0.91 eV, phiHbn=1.55 eV), with a difference of Deltaphibn=0.64 eV. Also, low ideality factor nL=1.94 and high ideality factor nH=1.22 are obtained. The C-V-T measurements show that the barrier height phibn decreases with decreasing of temperature and gives a temperature coefficient alpha=1.0·10-3 eV/K and phibn(T=0 K)=1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies Ea=0.50±0.07 eV, capture cross-section sigma=1.8·10-20 cm2, and defect concentration NT=6.2·1013 cm-3 were calculated from Arrhenius plots. Keywords: si1licon carbide, Schottky diodes, I-V, C-V-T, deep-level transient spectroscopy (DLTS).

A Au/ZnFe2O4/GaN Schottky junction with a semiconducting heteroepitaxial ZnFe2O4 insertion layer was prepared by using a combined synthesis process of pulsed laser deposition and sputtering. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Schottky junction, as well as its photovoltaic effect, were investigated under dark conditions or ultraviolet (UV) or blue illumination. Insertion of the semiconducting ZnFe2O4 interlayer clearly induced an increase in the rectification ratio. Based on I–V measurements in a forward bias region, the barrier height and ideality factor of the Au/ZnFe2O4/GaN junction were estimated to be about 0.89 eV and 1.58, respectively. On the other hand, C–V measurement in a reversed bias region suggested a relatively larger barrier height of ∼1.32 eV. The Au/ZnFe2O4/GaN junction showed an open-circuit voltage of ∼0.5 V under UV light and a clear switching photocurrent behavior with UV ON/OFF. A schematic band model with two interfaces, Au/ZnFe2O4 and ZnFe2O4/GaN, was proposed to explain the measured barrier heights in forward and reverse bias regions.

The magnetron discharge with hot (uncooled) target in an impulse mode has been experimentally investigated. The I–V characteristics have been measured depending on the magnetic field strength for three target materials: copper, chromium, and silicon. For melted copper and hot chromium targets, stable gasless (no argon) operation of the magnetron has been demonstrated with maximum impulse power densities about 2.5 kW/cm2 (averaged over the racetrack area). For silicon target, maximum impulse power density was 1.5 kW/cm2 at low argon pressure (0.1 Pa). The magnetic field dependences of discharge parameters have shown the associated changes in differential plasma impedance.

The work is devoted to the development of direct conversion devices of energy of high-enthalpy hypersonic gas flow into electrical energy. The experiments were carried out to study the electrical characteristics of the gap between two electrodes filled with weakly ionized plasma of the airflow at the wind tunnel with a magnetogasdynamic accelerator SMGDU. The voltages induced in the field of permanent magnets and the corresponding induction currents were measured with an ohmic load in the external circuit. The current-voltage characteristics of the discharge are constructed for the case of an additional supply of a current pulse from an external source to the interelectrode gap. The conductivity of the medium in the gas flow and the MHD interaction parameter were estimated. The results obtained can be used in the design of surface MHD generators for the autonomous production of electrical power on board of a hypersonic aircraft.

Further improvement of the control technology of lithium-ion batteries (LIBs) under system environments is considered necessary, but the dynamic characteristics have not been sufficiently studied to date. The authors have developed a porous electrode analysis technology that incorporates an electrical engineering method that is the basis of the system technology into the electrochemical technique. A method for optimizing the distributed constant type circuit model of the porous electrode is first constructed based on electrochemical impedance of electrodes, and the structure of the pores. Based on these results, a algorithm is then constructed to realize the dynamic characteristic analysis of the porous electrode. The structure of the porous electrode provides the reaction field, and the current/voltage values and the reaction rate are estimated by calculating the distributed constant type circuit representing the porous structure. These calculations are coupled with the Butler–Volmer equation and diffusion equations on a circuit simulator; as a result, a technique for analyzing the changes of resistance, current, and voltage in each part of the pore is established. It is considered that this technology can be applied to various applications as a basic technique for easily visualizing the current–voltage distribution in a porous electrode.

In this work, the Paschen curves and current–voltage characteristics of three large-area short glow discharge structures with grid and solid plate electrodes are studied. The study of the Paschen's curves reveals that Paschen's law is broken for all three investigated electrode structures. It is shown that the experimentally measured Paschen curves are well approximated with a modified Paschen's law. A comparison of the current–voltage characteristics of the short glow discharge in the three types of electrode structures reveals that the use of grid electrodes allows for the increase in the discharge current. The effects of the electrode gap, which were varied from 1 mm to 7 mm, on the Paschen curves and current–voltage characteristics of short glow discharges are also investigated.

Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current–voltage (I–V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I–V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

We investigate the extraction of the peak power of photovoltaic (PV) cells and modules from their current–voltage ( I–V ) characteristics. Synthetic I–V curves are generated by numerically solving the two-diode equation in steady-state conditions with representative parameters for crystalline silicon-based solar cells. Parasitic effects that may affect the shape of the current–voltage curves are not considered yet. The cases of high- and low-voltage sampling frequencies are addressed. We propose and qualify a novel fit procedure, where the boundaries are defined as two independent power thresholds, and demonstrate a factor 3–4 improvement on the peak power estimation in comparison with other state-of-the-art approaches. We unveil the dependence of the fit accuracy on the devices parameters, especially their fill factor (FF). Interestingly, we show that an equally good fit accuracy is obtained when only five to ten points are placed neighboring the peak power, provided that these points are placed at the appropriate positions. We then broaden our approach to the extraction of the short-circuit current density and the open-circuit voltage from I–V curves. We validate our guidelines by extracting the maximum peak power from (I-V) curves measured on actual PV devices.

Current-voltage characteristics of metal-protein-metal structures made of proteorhodopsin and bacteriorhodopsin are modeled by using a percolation-like approach. Starting from the tertiary structure pertaining to the single protein, an analogous resistance network is created. Charge transfer inside the network is described as a sequential tunneling mechanism and the current is calculated for each value of the given voltage. The theory is validated with available experiments, in dark and light. The role of the tertiary structure of the single protein and of the mechanisms responsible for the photo-activity is discussed.

A novel method for detection of biological species based on measurement of cantilever deflection has been proposed and numerically evaluated. Employing the cantilever as a moving gate of a MOSFET structure, its deflection can be analyzed via current characterization of the MOSFET consequently. Locating the cantilever as a suspended gate of a MOSFET on a substrate, the distance between cantilever and oxide layer will change the carrier concentration. Accordingly, it will be resulted in different current voltage characteristics of the device which can be easily measured using simple apparatuses. In order to verify the proposed method, the performance of system has been theoretically analyzed using COMSOL platform. The simulation results have confirmed the performance and sensitivity of the proposed method.

The switching behavior of cis and trans -azobenzene molecular device is studied using DFT method in combination with non-equilibrium Green’s function. The peak maximum is found to be more in the density of states spectrum for trans -azobenzene device rather than cis -azobenzene device due to direct link of two phenyl group by N N bonds. The current voltage characteristics clearly show the closed configuration of cis -azobenzene and open configuration of trans -azobenzene, which is attributed through the HOMO and LUMO level of cis and trans isomers. The observations of the present work give an insight on switching behavior of azobenzene based molecular device in the atomistic level.

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)1–x (AlN) x structures. The results of calculations are compared to experimental data.

We demonstrate a photoluminescence (PL)-based contactless method to determine the current–voltage ( I-V ) characteristics of the individual subcells in a multijunction solar cell. The method relies upon the reciprocity relation between the absorption and emission properties on a solar cell. Laser light with a suitable energy is used to excite carriers selectively in one junction (1J), and the internal voltages are deduced from the intensity of the resulting luminescence. The I–V curves obtained this way on 1J, 2J, and 6J devices are compared with those obtained using electroluminescence (EL). Good agreement is obtained at high-injection conditions, while discrepancies at low injection are attributed to in-plane carrier transport.

A battery-assisted charging system has been developed to improve the charging performance of a quick charger for electric vehicles. The developed system mainly consists of an alternating current-to-direct current inverter, a direct current-to-direct current voltage converter, a stationary battery, and an electric vehicle charger. The difference in charging rates in different seasons (winter and summer) was determined initially to measure the effect of electric vehicle battery temperature (influenced by surrounding temperature) on the charging rate. The charging rate during summer was higher than that during winter. In addition, simultaneous charging experiments were performed in different seasons (winter and summer) and for different contracted power capacities (50, 30, and 15 kW). Compared to a conventional charging system, the developed system can improve the charging performance of electric vehicle chargers in terms of the charging rate, while maintaining the contracted power capacity.

The article proposes a method of studying the localized states (“traps”) in the band gap of dielectrics. The method combines both the method of current-voltage characteristics and the method of thermally stimulated currentIt is intended to use the method for analyzing the materials, in which trapping states are quasi-continuously distributed. The article gives an example of using the method for studying of the advanced polymer material - polydiphenylenephthalide. It presents calculation of values of the activation energies and the depth of the traps. The results are compared with the data obtained by traditional methods.

In this research work, the optical absorption and photo-current characteristics of black grape, strawberry and orange solutions were investigated. The solutions were extracted from fresh fruits and UV-V is spectrophotometer was utilized to record the absorption spectra of the samples. Besides, the photo-current properties were investigated via current-voltage characteristics of the fruit solutions under illumination. The results showed that energy gaps of the fruits are located within the visible spectrum. Energy gap of 1.84eV was found for the black grape, 2.11eV for strawberry and 3.10eV for the orange solution. The broad absorption spectra for black grape and strawberry have proved the fruits capability to harvest solar energy. Additionally, the enhanced photo-current activity of the fruit solutions under light suggested their potential application for the organic and/or dyes solar cells

The current density induced along the axis of graphene superlattice in the presence of ac and dc electric fields has been calculated. The dc electric field vector is assumed to have both transverse and longitudinal components with respect to the superlattice axis. The constant component of the current density is shown to oscillate with a change in the ac field amplitude. The longitudinal current–voltage characteristic of graphene superlattice contains a portion with negative differential conductivity. The maximum of the longitudinal current–voltage characteristic shifts to larger values of the longitudinal component of dc field with an increase in the transverse component of electric field.

Gepulste Hochleistungsplasmen (High Power Pulsed Magnetron Sputtering — HPPMS) eignen sich hervorragend zur Synthese von hochwertigen keramischen Schichten, da der Fluss der schichtbildenden Teilchen sehr energiereich ist. Diese besondere Form der Energieverteilung hat ihre Ursache in der Bildung von lokalisierten Ionisationszonen, wie man sie mit schnellen Kameramessungen beobachten kann. In der Praxis sind allerdings nur kostengunstigere Methoden wie Strom-Spannungsmessungen am Target verfugbar. Durch Interpretation der Strom-Spannungskennlinien ist es trotzdem moglich, den richtigen Betriebsmodus eines HPPMS-Plasmas zu finden. Diese Strom-Spannungskennlinien sind je nach Targetmaterial sehr unterschiedlich, zeigen aber eindeutig die Bildung von lokalisierten Ionisationszonen an und damit den optimalen Betriebsmodus eines HPPMS-Plasmas. Control of High Power Pulsed Magnetron Plasmas (HPPMS) by Monitoring Current-Voltage Characteristics High Power Pulsed Magnetron Sputtering (HPPMS) plasmas are perfectly suited for the synthesis of ceramic coatings with superior properties. This excellent performance is induced by the very peculiar energetic particle flux reaching the substrate to be coated. The ion energy distribution originates from the formation of localized ionization zones which can be imaged by fast cameras. In commercial HPPMS reactors, however, only much simpler methods such as current voltage characteristics (VI curves) are accessible. By a proper interpretation of those VI curves, it is possible to identify the favorable operation mode of an HPPMS plasma. The VI curves vary with target material, but they are sensitive to the occurrence of localized ionization zones, which represent the optimum for the operation parameter window of HPPMS plasmas.

Electric barriers can inhibit passage and injure fish. Few data exist on electric barrier parameters that minimize these impacts and on how body size affects susceptibility, especially to nontarget fish species. The goal of this study was to determine electric barrier voltage and pulse-width settings that inhibit passage of larger bodied rainbow trout Oncorhynchus mykiss (215–410 mm fork length) while allowing passage of smaller bodied juvenile rainbow trout (52–126 mm) in a static laboratory setting. We exposed rainbow trout to 30-Hz pulsed-direct current voltage gradients (0.00–0.45 V cm−1) and pulse widths (0.0–0.7 ms) and recorded their movement, injury incidence, and mortality. No settings tested allowed all juveniles to pass while impeding all adult passage. Juvenile and adult rainbow trout avoided the barrier at higher pulse widths, and fewer rainbow trout passed the barrier at 0.7-ms pulse width compared to 0.1 ms and when the barrier was turned off. We found no effect of voltage gradient on fish passage. No mortality occurred, and we observed external bruising in 5 (7%) juvenile rainbow trout and 15 (21%) adult rainbow trout. This study may aid managers in selecting barrier settings that allow for increased juvenile passage.

The Au88Ge12 alloy/n-type GaAs(100)/Graphene Oxide (GO)/Au Schottky barrier diode has been fabricated. GO has been prepared by Hummers method and deposited on the GaAs substrate by spraying method. Schottky diode was investigated under dark and light intensity by the current-voltage (I-V) characteristics of the heterojunction. Thermionic current mechanism above the barrier has been detected by current-voltage measurements. It was found that the barrier height increases and the ideality factor decreases with light intensity. The obtained results indicate that GaAs/GO diode can be used as a photosensor in optoelectronic applications. Also, Schottky diode has been measured by capacitance-voltage (C-V) and conductance-voltage (G-V) in the frequency range from 10 kHz to 1 MHz at room temperature.

We report on polymer composites with embedded graphene flakes which exhibit a current–voltage characteristic of Josephson type.

Quantitative photoluminescence (PL) or electroluminescence (EL) experiments can be used to probe fast and in a non-destructive way the current-voltage (IV) characteristics of individual subcells in a multi-junction device, information that is, otherwise, not available. PL-based IV has the advantage that it is contactless and can be performed even in partly finished devices, allowing for an early diagnosis of the expected performance of the solar cells in the production environment. In this work we simulate the PL- and EL-based IV curves of single junction solar cells to assess their validity compared with the true IV curve and identify injection regimes where artefacts might appear due to the limited in-plane carrier transport in the solar cell layers. We model the whole photovoltaic device as a network of sub-circuits, each of them describing the solar cell behaviour using the two diode model. The sub-circuits are connected to the neighbouring ones with a resistor, representing the in-plane transport in the cell. The resulting circuit, involving several thousand subcircuits, is solved using SPICE.

This is a discussion of the details of the current-voltage characteristics of a 2D Corbino disk with a uniform density of mobile carriers in the quantum Hall effect plateau. It is shown that diffusion may be one of the reasons for the variety of observed current-voltage characteristics. The anomalous role of diffusion in the formation of the current-voltage characteristics of Corbino disks is determined by the dimensionality of the problem, as well as by the “quality” of the density of states of the magnetized 2D conducting system. The diffusion hypothesis is applied to some specific results and provides an explanation of the difference between the current-voltage characteristics shown in Figs. 1 and 2.

We investigated the mechanical stability of single gold atomic contacts at an applied bias voltage of 0-1 V using a nano-fabricated mechanically controllable break junction technique at 300-400 K under ambient conditions. The single atomic contact shows the quantized conductance (G0 = 2e(2)/h) and can carry considerably large current, which results in the current-induced failure of the contact. The contact failure behaviour under the applied bias conditions was studied by statistical analysis of the current-voltage (I-V) curves of the single Au contacts. We demonstrated that, at the elevated temperature of 300-400 K, the current-induced local heating effect is negligibly small and current-induced forces in the contact are responsible for the observed failure of the single gold contacts under the high bias voltage conditions (>0.4 V). Furthermore, based on the temperature dependence of the contact failure behaviour in the I-V curves, the energy barrier of the contact-failure was evaluated to be ca. 0.1 V.