201. Synthesis and characterization of P δ-layer in SiO2 by monolayer doping.
- Author
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Elisa Arduca, Massimo Mastromatteo, Davide De Salvador, Gabriele Seguini, Cristina Lenardi, Enrico Napolitani, and Michele Perego
- Subjects
SILICON oxide ,SEMICONDUCTOR doping profiles ,RUTHERFORD backscattering spectrometry ,DIFFUSION ,TIME-of-flight mass spectrometry ,NANOSTRUCTURED materials - Abstract
Achieving the required control of dopant distribution and selectivity for nanostructured semiconducting building block is a key issue for a large variety of applications. A promising strategy is monolayer doping (MLD), which consists in the creation of a well-ordered monolayer of dopant-containing molecules bonded to the surface of the substrate. In this work, we synthesize a P δ−layer embedded in a SiO
2 matrix by MLD. Using a multi-technique approach based on time of flight secondary ion mass spectrometry (ToF-SIMS) and Rutherford backscattering spectrometry (RBS) analyses, we characterize the tuning of P dose as a function of the processing time and temperature. We found the proper conditions for a full grafting of the molecules, reaching a maximal dose of 8.3 × 1014 atoms/cm2 . Moreover, using 1D rate equation model, we model P diffusion in SiO2 after annealing and we extract a P diffusivity in SiO2 of 1.5 × 1017 cm2 s−1 . [ABSTRACT FROM AUTHOR]- Published
- 2016
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