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Similar to graphene, zero band gap limits the application of Silicene in nanoelectronics despite of its high carrier mobility. In this article we calculate the contribution of electron-phonon interaction to thermoelectric effects in silicene. One considers the case of free standing silicene taking into account interaction with intrinsic acoustic phonons. The temperature considered here is at room temperature. We noticed that the contribution to thermoelectromotive force due to electron drag by phonons is determined by the Fermi energy. The explicit temperature dependence of the contribution to thermoelectromotive force deriving from by phonons is weak in contrast to that due to diffusion, which is directly proportional to temperature. Thus a theoretical limit has been established for a possible increase of the thermoelectromotive force through electron drag by the intrinsic phonons of silicene. Keywords: Phonon-drag thermopower, electron-diffusion thermopower, silicene, fermi energy, zero band gap

In this paper, we have modeled and simulated the magnetic field of the conductor by using the finite element method, which is incorporated in Ansoft Maxwell software. Modeling and simulation are done for a conductor and two conductors located at a small distance between them. Our study is based on the method of finite elements and Biot-Savart law for calculating the magnetic field depending on the distance from the conductor. We have observed that the calculated values of the magnetic field are in good accordance with Biot-Savart law [1]. We have found that magnetic field normal to the main axis of the conductor falls linearly towards it, whereas outside the conductor magnetic field is inversely proportional to distance. In the case of simultaneous calculation of the field inside and outside the conductor, a small margin has been found. This difference is as a result of the simultaneous calculation of magnetic field in two environments with different magnetic permeability. Finally, we have computed the magnetic field at an equal point between two conductors when the currents have opposite and same direction, whereby a huge difference between the magnetic fields is found. We show that we can amplify or reduce the intensity of the magnetic field, based not only on the distance between the conductors but also on the basis of the directions of the currents flowing through these conductors.

In this paper, we obtain an explicit Berry-Esseen bound in the central limit theorem for nonlinear statistics with bounded differences. Some examples are provided as well.

The solution–liquid–solid (SLS) mechanism is a well-established method for forming one-dimensional (1D) nanostructures in a solution. Herein, an SLS mechanism is explored for the formation of metal...

Recently prepared layered MoSi2N4 exhibits excellent stability and semiconductor properties, adding building blocks for two-dimensional families. In this research, we present the spin-orbit coupling and valley-related properties of monolayer WSi2N4 family. Better than transition metal dichalcogenides, the structural symmetry of WSi2N4 monolayer can be different by changing the stacking of three parts in the monolayers, resulting in a Rashba spin-orbit field. The vertical and horizontal polarization will lift the degeneration of the in-plane and out-of-plane polarized spin, respectively. The gradient of potential energy and the proportion of d orbitals play dominant roles. The in-plane orbitals contribute to the out-of-plane spin polarization, while the out-of-plane orbitals contribute to the in-plane spin polarization. The characteristics of a Rashba semiconductor can be utilized in spin/valley Hall effects, as well as the regulation of the spin direction of the valley electrons, promoting the manipulation of multiple degrees of freedom of electrons in monolayer materials.

At the temperature 293 K, the influence of two types of nanoimpurities (carbon multiwall nanotubes and C60 fullerene) both separately and together on the dielectric properties of Shell oil transformer oil has been studied. It has been shown that these impurities do not significantly effect on the value of the dielectric permittivity of Shell oil, but more significantly increase its conductivity. It has been found that in the presence of nanotubes inside Shell oil, the dependence of its electrical conductivity on the fullerene concentration is nonmonotonic. The samples with the fullerene concentration 100 ppm have the highest conductivity. At the fullerene concentration 300 ppm, the conductivity of Shell oil with the impurities of carbon nanotube and C60 fullerene becomes almost equal to the electrical conductivity of Shell oil only with the impurities of carbon nanotubes. It has been suggested that C60 fullerene can be used to reduce the electrical conductivity of Shell oil with magnetic nanoparticles required to increase the cooling efficiency of transformers under the action of their own magnetic field.

Band structure engineering based on InGaN/ZnGeN2 heterostructure quantum wells (QWs) is proposed to address the long-standing charge separation challenge in visible light emitters using polar InGaN...

The study of charge and spin transport through semiconductor quantum dots is experiencing a renaissance due to recent advances in nanofabrication and the realization of quantum dots as candidates f...

Semiconductor nanocrystals coupled with plasmonic Au nanoparticles have been widely studied as photoelectrocatalysts for solar water splitting. Among these, heterostructures of copper chalcogenides with Au remained a unique category for their dual plasmon character. However, while sulfides and selenides of copper have been extensively reported, heterostructures of copper tellurides with Au have not been explored. Herein, the plasmonic semiconductor Cu2-xTe disks grown on Au nanoparticles (disk-on-dot) were explored as efficient photoelectrocatalysts for hydrogen evolution reactions (HER). This has been successfully designed by growing Cu2-xTe disks on presynthesized Au nanoparticles under optimized reaction conditions. The resulting heterostructured nanocrystals acted as efficient photoelectrocatalysts for the H2 evolution reaction with a low Tafel slope and less cathodic overpotential in the presence of light. Details of their synthesis, characterization, optical properties, and electrocatalytic activities are studied and reported in this letter.

The modulation of exciton-phonon coupling by strain greatly affects the optical and optoelectronic properties of two-dimensional (2D) materials. Although photoluminescence and optical absorption spectra have been used to characterize the overall change of exciton-phonon coupling under strain, there has been no effective method to distinguish the evolution of the major contributions of exciton-phonon coupling, that is, deformation potential (DP) and Frohlich interaction (FI). Here we report the direct monitoring of the evolution of DP and FI under strain in layered MoS2 using circularly polarized Raman spectroscopy. We found that the relative proportions of DP and FI can be well evaluated by the circular polarization ratio of the E2g1 mode for strained MoS2. Further, we demonstrated that the strain control of DP and FI in MoS2 is dominated by the excitonic effect. Our method can be extended to other 2D semiconductors and would be helpful for manipulating exciton-phonon couplings by strain.

Most previous work concentrated on the thermal smoke temperature distribution in traditional single tunnel fires. However, few investigations have studied the effects of branch tunnel and longitudinal fire source location on thermal smoke temperature beneath the ceiling. In this paper, a series of experiments were performed in a 1:10 reduced scale branched tunnel to investigate the longitudinal fire location effects on the thermal smoke temperature distribution beneath the ceiling. Thirteen longitudinal fire locations and three heat release rates were considered. The main conclusions are summarized as follows: The thermal smoke temperature near the fire source is obviously different for various longitudinal fire locations, while the temperature in the area far from the fire source is basically the same. The dimensionless longitudinal thermal smoke temperature beyond 0.75 m downstream from the fire source in the main tunnel is not obviously affected by the longitudinal fire location, which can be well predicted by Li’s model. However, the attenuation coefficient is obviously larger than that in traditional single tunnel due to the existence of branch tunnel. Moreover, when the fire source moves away from the intersection region to upstream or downstream, the thermal smoke temperature in the branch tunnel shows a decrease. A modified model is proposed to describe the longitudinal temperature decay in branch tunnel taking the longitudinal fire location into account, which is reasonably well fitting with experimental results. The results in this paper are essential for better understanding of thermal smoke temperature in branched tunnel and providing references for fire safety design of branched tunnels.

A requirement for quantum information processors is the in situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit operation but limits device tunability using in-plane gate architectures, requiring vertically separated top-gates to control tunnelling within the device. In this paper, we address control of the simplest tunnelling device in Si:P, the tunnel junction. Here we demonstrate that we can tune its conductance by using a vertically separated top-gate aligned with ±5 nm precision to the junction. We show that a monolithic 3D epitaxial top-gate increases the capacitive coupling by a factor of 3 compared to in-plane gates, resulting in a tunnel barrier height tunability of 0-186 meV. By combining multiple gated junctions in series we extend our monolithic 3D gating technology to implement nanoscale logic circuits including AND and OR gates.

Interlayer charge transfer (CT) between PtSe2 and WS2 is studied experimentally. Layer-selective pump-probe and photoluminescence quenching measurements reveal ultrafast interlayer CT in the heterostructure formed by bilayer PtSe2 and monolayer WS2, confirming its type-II band alignment. The CT facilitates the formation of the interlayer excitons with a lifetime of several hundred ps to 1 ns, a diffusion coefficient of 0.9 cm2 s-1, and a diffusion length reaching 200 nm. These results demonstrate the integration of PtSe2 with other materials in van der Waals heterostructures with novel charge-transfer properties and help develop fundamental understanding on the performance of various optoelectronic devices based on heterostructures involving PtSe2.

Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance. Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures. Herein, we grew SnS2/Bi2X3 (X = Se, Te) van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition. The band alignment, measured by high-resolution X-ray photoelectron spectroscopy, suggested the successful design of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 heterostructures. The SnS2/Bi2X3 heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector. The photocurrent densities in the type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 heterostructure-based devices were more than one order of magnitude higher than those of SnS2, Bi2Se3, and Bi2Te3. The improved photoelectric properties of the SnS2/Bi2X3 heterostructures can be explained as follows: (i) the photoexcited electrons and holes are effectively separated in the heterostructures; (ii) the charge-transfer efficiency and carrier density at the interface between the SnS2/Bi2X3 heterostructures and the electrolyte are greatly improved; (iii) the formed heterostructures expand the light absorption range. The photoelectric performance was further enhanced by efficient light trapping in the upright SnS2. The photoelectric response is higher in the type-I SnS2/Bi2Se3 heterostructure than in the type-II SnS2/Bi2Te3 heterostructure due to more efficient charge transportation at the type-I SnS2/Bi2Se3 heterostructure/electrolyte interface. These results suggest that suitable type-I and type-II heterostructures can be developed for high-performance photodetectors and other optoelectronic devices.

Two-dimensional (2D) semiconductors have emerged as an excellent platform for studying various excitonic matter under strong quantum and dielectric confinements. However, such effects can be seriously overestimated for Coulomb binding of two excitons to form a biexciton by a naive interpretation of the corresponding photoluminescence (PL) spectrum. By using 2D halide perovskite single crystals of [CH3(CH2)3NH3]2Pb1-xMnxBr4 (x = 0-0.09) as a model system, we investigated both population and relaxation kinetics of biexcitons as a function of excitation density, temperature, polarization, and Mn doping. We show that the biexciton is formed by binding of two dark excitons, which are partially bright, but they radiatively recombine to yield a bright exciton in the final state. This renders the spectral distance between the exciton peak and the biexciton peak as very different from the actual biexciton binding energy (ϕ) because of large bright-dark splitting. We show that Mn doping introduces paramagnetism to our 2D system and improves the biexciton stability as evidenced by increase in ϕ from 18.8 ± 0.7 to 20.0 ± 0.7 meV and the increase of the exciton-exciton capture coefficient C from 2.4 × 10-11 to 4.3 × 10-11cm2/ns within our doping range. The precisely determined ϕ values are significantly smaller than the previously reported ones, but they are consistent with the instability of the biexciton against thermal dissociation at room temperature. Our results demonstrate that electron-hole exchange interaction must be considered for precisely locating the biexciton level; therefore, the ϕ values should be reassessed for other 2D halide perovskites that even do not exhibit any dark exciton PL.

We discover chiral phonons at the lowest-energy bands in moir\'e superlattices. The moir\'e chiral phonons we uncover are the collective excitations of the stacking domains. Their origin is uniquely attributed to the stacking configurations whose interlayer binding energy breaks the $C_{2z}$ symmetry on the moir\'e length scale. Within elastic theory, we use a general symmetry analysis to provide a complete classification of van der Waals heterostructures in respect to hosting moir\'e chiral phonons and show the calculation for twisted MoS$_2$ as an example. We present a low-energy effective model to qualitatively understand the moir\'e chiral phonons and show that it captures the essential physics remarkably well. Our result potentially opens up new possibilities in phononic twistronics as the moir\'e chiral phonons have high tunability, moir\'e scale wavelengths, excitation energies in only a few meV, and can possibly be mechanically excited., Comment: 5 pages and 5 figures of main text + 5 pages and 1 figure of supplementary

Herein, GaSe/SnSe van der Waals heterostructure is established based on first-principles calculations of density functional theory (DFT). And the changes of band structure, bandgap, density of states, electronic density difference, and optical properties of GaSe/SnSe heterostructure before and after the introduction of Ga, Sa1, Sn, and Se2 vacancies are systematically studied. The results show that GaSe/SnSe heterostructures and four vacancy heterostructures can exist stably. The band structure of GaSe/SnSe heterostructure changes greatly with the introduction of vacancy. When Ga vacancy is introduced, the GaSe monolayer and GaSe/SnSe heterostructure exhibit obvious metal properties. In addition, the introduction of vacancies makes GaSe/SnSe heterostructures available for ultraviolet and visible light absorption and conversion. The introduction of vacancies in GaSe/SnSe heterostructures provides a feasible strategy for adjusting the photoelectric properties of two-dimensional photoelectric nanodevices. It has good potential and broad application prospects in infrared light conversion and detection.

When a Josephson junction is exposed to microwave radiation, it undergoes the inverse AC Josephson effect─the phase of the junction locks to the drive frequency. As a result, the I-V curves of the junction acquire "Shapiro steps" of quantized voltage. If the junction has three or more superconducting contacts, coupling between different pairs of terminals must be taken into account and the state of the junction evolves in a phase space of higher dimensionality. Here, we study the multiterminal inverse AC Josephson effect in a graphene sample with three superconducting terminals. We observe robust fractional Shapiro steps and correlated switching events, which can only be explained by considering the device as a completely connected Josephson network. We successfully simulate the observed behaviors using a modified two-dimensional RCSJ model. Our results suggest that multiterminal Josephson junctions are a playground to study highly connected nonlinear networks with novel topologies.

Colloidal semiconductor nanoplatelets (NPLs) are chemical versions of well-studied quantum wells (QWs). For QWs, gating and carrier doping are standard tools to manipulate their optical, electric, or magnetic properties. It would be highly desirable to use pure chemical methods to dope extra charge carriers into free-standing colloidal NPLs to achieve a similar level of manipulation. Here we report colloidal n-doped CdSe and CdSe/ZnS NPLs achieved through a photochemical doping method. The extra electrons doped into the conduction band edges are evidenced by exciton absorption bleaches recoverable through dedoping and the appearance of new intersub-band transitions in the near-infrared. A high surface ligand coverage is the key to successful doping; otherwise, the doped electrons can be depleted likely by unpassivated surface cations. Large trion binding energies of 20-30 meV are found for the n-doped CdSe NPLs, which, in contrast, are reduced by 1 order of magnitude in CdSe/ZnS core/shell NPLs due to dielectric screening. Furthermore, we identify a long-lived negative trion with a lifetime of 1.5-1.6 ns that is likely dominated by radiative recombination.

We develop the mean-field theory for the step density-induced anomalous variation in electronic capacitance, work function (WF), potential of zero charge (PZC), and interfacial capacitance (IC) of ...

We investigated the magnetic effect of Mn2+ ions on an exciton of Mn-doped CsPbI3 quantum dots (QDs), where we looked for the signatures of an exciton magnetic polaron known to produce a large effective magnetic field in Mn-doped CdSe QDs. In contrast to Mn-doped CdSe QDs that can produce ∼100 T of magnetic field upon photoexcitation, manifested as a large change in the energy and relaxation dynamics of a bright exciton, Mn-doped CsPbI3 QDs exhibited little influence of a magnetic dopant on the behavior of a bright exciton. However, a μs-lived dark exciton in CsPbI3 QDs showed 40% faster decay in the presence of Mn2+, equivalent to the effect of ∼3 T of an external magnetic field. While further study is necessary to fully understand the origin of the large difference in the magneto-optic property of an exciton in two systems, we consider that the difference in antiferromagnetic coupling of the dopants is an important contributing factor.

The fascinating optoelectronic properties of semiconductor quantum dots (QDs) originate from the quantum confinement effect; i.e., the band gap increases as the size decreases. Another significant ...

The present manuscript has proposed a capacitance-based model of dual material gate charge plasma-based vertically t-shaped Tunnel Field Effect Transistor (DMG V-tTFET) with spacer regions. The surface potential model, which modulates terminal capacitance and the drain current model is used to analyse the Poisson Equation (PE). For modelling the n-type channel, the inclusions are an enhancement-mode, accumulated charges, and ionized impurity charge carriers. The spacer region’s surface potential and channel region potential are inspected with modelling whose outcomes are authenticated by the simulations in the Silvaco TCAD software for various boundary conditions. The potential model is found by allocating the proposed device into ten distinct units and applying the 1-Dimensional (1-D) and 2-Dimensional (2-D) PE in their respective sections. To resolve the PEs for different sections, the parabolic approximation method is employed. The impact of geometrical variety, for instance, the spacer length and tunnelling width are analysed with dependence upon the electrical characteristics of DMG V-tTFET. The surface potential of greater than 0.75 V at a power supply voltage of 0.5 V is attributed to the establishment of an energy barrier in the channel with optimal device parameters.

We prove an adiabatic theorem for the Landau-Pekar equations. This allows us to derive new results on the accuracy of their use as effective equations for the time evolution generated by the Fr\"ohlich Hamiltonian with large coupling constant $\alpha$. In particular, we show that the time evolution of Pekar product states with coherent phonon field and the electron being trapped by the phonons is well approximated by the Landau-Pekar equations until times short compared to $\alpha^2$., Comment: improved error estimates in the adiabatic theorem (Theorem II.1), updated Remark II.4, to appear in Anal. PDE

Energy spectrum, wave functions and binding energies of the electron to the donor impurity ion located in the center of a multilayer spherical quantum dot (MSQD) consisting of a core and two spherical shells were studied within the effective mass approximation. Based on the exact wave functions of the electron expressed in terms of Coulomb functions of the first and second kind, the spectral dependences of the photoionization cross section of the impurity (PCS) and the intersubband optical absorption coefficient (OAC) for various geometric dimensions of the nanostructure were calculated. It is shown that the decrease in the width of the external potential well changes the localization of the electron in the nanosystem which significantly affects the binding energy of the electron with the impurity, photoionization cross section and interband absorption coefficient. The position of the PCS peak associated with the quantum transition of an electron from the ground state to the 1p0 state shifts to the region of higher energies, and its height decreases. At the same time, the height of PCS peaks associated with quantum transitions to higher excited states (2p0, 3p0) increases.The presence of impurities and changes in the MSQD size significantly affect the intersubband absorption coefficient. Decrease of the external potential well width in the absence of impurities leads to a monotonous increase in OAC through the first excited state, and in the presence of a central impurity, absorption through states with higher energy increases.

The article considers the main causes and factors affecting the oper¬ation of wells in oil fields, the coefficients of rank correlation and the frequency of well oscillations are determined to compile an analytical model describing the formation of a field in the formation with a joint inflow of formation water and carbonated oil to the well in order to inject wells into optimal regimes work. Keyword: correlation, model, formation, pres¬sure, radius.

In the field of photocatalytic water splitting, the direct Z-scheme heterostructure is regarded as a promising photocatalyst configuration. In this paper, we use density functional theory to predict the Ti2CO2/CrSSe heterostructure as a potential direct Z-scheme heterojunction photocatalyst and investigate its electronic, optical, and heterojunction interface properties. The results show that the Ti2CO2/CrSSe heterojunction has a strong electrostatic attraction between the electrons in the conduction band of Ti2CO2 and the holes in the valence band of CrSSe due to the small interlayer band gap, which can realize the rapid interlayer electron-hole (e−–h+) recombination. The redistribution of charge results in a built-in electric field that prevents unwanted electron and hole migration. In addition, the Ti2CO2/CrSSe van der Waals (vdW) heterojunction exhibits excellent light absorption, and its redox ability has been improved. These properties indicate that Ti2CO2/CrSSe heterostructure is a promising photocatalyst.

A proposed core–shell gate all-around junctionless field-effect transistor (CS GAA JLFET) is studied using extensive simulations. An oppositely doped core is sandwiched between the shells to achiev...

While the atomic structure of interfaces in complex oxide heterostructures created by epitaxial growth has been investigated extensively, few studies have been conducted on how interfaces form and ...

In this paper, a numerical model is used to analyze photovoltaic parameters according to the electronic properties of $${\text{InGaN/GaN}}$$ multiple quantum-well solar cells (MQWSC) under hydrostatic pressure. Finite-difference methods are used to acquire energy eigenvalues, and their corresponding eigenfunctions of $${\text{InGaN/GaN}}$$ MQWLED and the hole eigenstates are calculated via a $$6 \times 6$$ k.p method under applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) and barrier optical absorption are considered. Further, the linewidth due to the carrier-carrier and carrier-longitudinal optical (LO) phonon scattering is considered. The result of the photoelectric current is compared with the single-subband model. According to the results, a change in pressure up to 10 GPa increases the intraband scattering time up to 38 fs for heavy holes and 40 fs for light holes, raises the height of the Lorentz function, reduces the excitonic binding energy, and decreases the photocurrent density up to $${\text{5mA}}/{\text{cm}}^{2}$$ . The multi-subband model positively affects the photocurrent density, increasing it by $${\text{4mA}}/{\text{cm}}^{2}$$ , contrary to the pressure function.

Semiconducting monolayers of transition-metal dichalcogenides are outstanding platforms to study both electronic and phononic interactions as well as intra- and intervalley excitons and trions. The...

A theoretical investigation is presented for the bright and dark solitons in GaAs, GaSb, InP, and GaN quantum magnetized semiconductor plasma systems. The plasma system consists of electrons, holes...

Semiconducting single-walled carbon nanotubes (SWCNTs) often exhibit distinctive spectral features due to a complex dark exciton manifold. One of those features, the K-momentum dark exciton (KDE) s...

Valley-dependent excitation and emission in transition metal dichalcogenides (TMDCs) have recently emerged as a new avenue for optical data manipulation, quantum optical technologies, and chiral photonics. The valley-polarized electronic states can be optically addressed through photonic spin-orbit interaction of excitonic emission, typically with plasmonic nanostructures, but their performance is limited by the low quantum yield of neutral excitons in TMDC multilayers and the large Ohmic loss of plasmonic systems. Here, we demonstrate a valleytronic system based on the trion emission in high-quantum-yield WS2 monolayers chirally coupled to a low-loss microfiber. The integrated system uses the spin properties of the waveguided modes to achieve long-range directional routing of valley excitations and also provides an approach to selectively address valley-dependent emission from different spatial locations around the microfiber. This valleytronic interface can be integrated with fiber communication devices, allowing for merging valley polarization and chiral photonics as an alternative mechanism for optical information transport and manipulation in classical and quantum regimes.

Two-dimensional photonic crystal nanocavities were designed to tailor cavity quantum electrodynamics. Enhancing the spontaneous emission of low-quality factor nanocavity with embedded CdSe quantum dots (QDs) emitters is the aim of this study. Low concentration layer of CdSe QDs was sandwiched between two layers of Si2 N3 membrane using plasma-enhanced chemical vapor deposition. The modification rate in spontaneous emission of L3 nanocavity up to 2.3-fold has been observed at 629.5 nm in compare to bare cavities. High field confinement in the sub-wavelength regime became an interest field for quantum electrodynamics applications and good platform to study light matter interactions.

Non-coplanar spin textures with finite scalar spin chirality can be artificially induced at surfaces and interfaces through the interfacial Dzyaloshinskii-Moriya interaction. However, stabilizing a proper magnetic skyrmion crystal via this route remains elusive. Here, using an epitaxial bilayer of platinum and geometrically frustrated kagome-lattice ferromagnet Fe3Sn, we show the possible formation of a two-dimensional skyrmion crystal under well-regulated Fe3Sn thickness conditions. Magnetization measurements reveal that the magnetic anisotropy is systematically varied from an inherent in-plane type to a perpendicular type with the thickness reduction. Below approximately 0.5 nm, we clearly detect a topological Hall effect that provides evidence for finite scalar spin chirality. Our topological Hall effect analysis, combined with theoretical simulations, not only establishes its interfacial Dzyaloshinskii-Moriya interaction origin, but also indicates the emergence of a stable skyrmion crystal phase, demonstrating the potential of kagome-lattice ferromagnets in spin chirality engineering using thin-film nanostructures. Magnetic skyrmions are swirling topological spin textures induced by chiral interactions in non-centrosymmetric systems. Here, a Pt-Fe3Sn bilayer exhibits a thickness-dependent magnetic anisotropy and interfacial Dzyaloshinskii-Moriya interaction that are key to the controlled stabilization of a skyrmion crystal.

Tunnel blast-induced vibration probably causes damage to the rock mass surrounding the tunnel surface and also to the rock mass of the slope at the tunnel entrance. It is important to simultaneously monitor the vibration on the tunnel surface and on the tunnel entrance slope face, especially when the blasting work face is close to tunnel entrance. During blasting excavation of the traffic tunnel at Baihetan hydropower station, vibration monitors were installed both on the tunnel surface and on the tunnel entrance slope face. Based on the monitoring data, a comparative study is conducted on the peak particle velocity (PPV) and frequency characteristics of the vibrations at these two locations. A three-dimensional FEM simulation of the tunnel blast is then performed to verify the field test results. The field monitoring and the numerical simulation show that there is significant difference between the vibration on the tunnel surface and that on the tunnel entrance slope face. The vibration on the tunnel surface has greater PPV and faster attenuation, while the tunnel entrance slope face has higher frequency and faster reduction rate in the center frequency. These differences are attributed to the different wave types and wave propagation paths. The tunnel surface is mainly surface waves transmitted through the damaged rock mass around the tunnel profile, while the tunnel entrance slope face originates mainly from the body waves transmitted via the undamaged rock mass inside the mountain. The comparisons of the monitored vibrations with the velocity limits specified in the Chinese standard show that the most dangerous vibration that may exceed the limit occurs on the tunnel surface. Therefore, the maximum charge weight used in the tunnel blast is determined by the vibration on the tunnel surface. Under different control standards, the allowable maximum charge weight per delay is further discussed.

Superconductor-ferromagnet interfaces in two-dimensional heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making atomically-sharp interfaces from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. The critical current and corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Also, we observe a central minimum of critical current in some JJ devices as well as a nontrivial phase shift in SQUID structures, evidencing the coexistence of 0 and π phase in the junction region. Our study paves the way to exploring sensitive probes of weak magnetism and multifunctional building-blocks for phase-related superconducting circuits using vdW heterostructures., The superconductor-ferromagnet interface provides a unique opportunity to study the interplay between superconductivity and ferromagnetism. Here, the authors build a van der Waals ferromagnetic Josephson junction evidencing a strong 0 and π phase Josephson coupling.

Aroused by plant photosynthesis, Z-scheme heterostructures have been considered as a potential photocatalyst for solar-driven water splitting to solve the current energy crisis. Hence, based on first-principles calculations, we predict that Sc2CF2/Janus MoSSe can be used as a Z-scheme heterostructure for efficient photocatalytic water splitting. The research shows that the traditional type-II to direct Z-scheme heterostructure conversion can be realized through different stacking methods of Sc2CF2 and Janus MoSSe. Through the built-in electric field and band bending theory, the transition path of photogenerated carriers is analyzed, which reveals the completely different photocatalytic mechanism of type-II and direct Z-scheme heterostructure. Surprisingly, the direct Z-scheme heterostructure displays a high overpotential of the hydrogen evolution reaction ( χ H 2 =1.01 eV) and the oxygen evolution reaction ( χ O 2 =1.46 eV) compared with the type II heterostructure. More importantly, the direct Z-scheme heterostructure has an ultra-high solar-to-hydrogen (STH) efficiency (36.1%), which breaks through the limitation of traditional theoretical efficiency and reveals a tremendous prospect of commercial application. Furthermore, the calculation of free energy confirms that the water splitting reaction on the direct Z-scheme heterostructure occur spontaneously under the external potential, but not for type-II heterostructure. Finally, introducing the additional electronic conductor (N-doped graphene) can accelerate the electron (hole) transfer and interlayer carrier recombination, which will further improve the photocatalytic performance of Z-scheme heterostructure. These distinctive features make Sc2CF2/Janus MoSSe heterostructure as promising Z-scheme photocatalyst for water splitting.

Boundary layer development in a supersonic inlet is studied, focusing on the flow over the compression ramp and the ramp–isolator junction. Two designs of the junction, a backward-facing step (BFS)...

Unification of the techniques of ultrafast science and scanning tunneling microscopy (STM) has the potential of tracking electronic motion in molecules simultaneously in real space and real time. Laser pulses can couple to an STM junction either in the weak-field or in the strong-field interaction regime. The strong-field regime entails significant modification (dressing) of the tunneling barrier of the STM junction, whereas the weak-field or the photon-driven regime entails perturbative interaction. Here, we describe how photons carried in an ultrashort pulse interact with an STM junction, defining the basic fundamental framework of ultrafast photon-induced tunneling microscopy. Selective dipole coupling of electronic states by photons is shown to be controllable by adjusting the DC bias at the STM junction. An ultrafast tunneling microscopy involving photons is established. Consolidation of the technique calls for innovative approaches to detect photon-induced tunneling currents at the STM junction. We introduce and characterize here three techniques involving dispersion, polarization, and frequency modulation of the laser pulses to lock-in detect the laser-induced tunneling current. We show that photon-induced tunneling currents can simultaneously achieve angstrom scale spatial resolution and sub-femtosecond temporal resolution. Ultrafast photon-induced tunneling microscopy will be able to directly probe electron dynamics in complex molecular systems, without the need of reconstruction techniques.

The classical and quantum Hall effects are important subjects in condensed matter physics. The emergent 3D quantum Hall effects and nonlinear Hall effect have attracted considerable interest recently, with the former elevating the quantum Hall effect to a higher dimension and the latter extending the Hall effect to higher-order responses. In this perspective, we briefly introduce these two new members of the Hall family and discuss the open questions and future research directions.

A procedure is developed for the growth of thick, conformal CdS shells that preserve the optical properties of 5 nm HgSe cores. The n-doping of the HgSe/CdS core/shell particles is quantitatively tuned through a simple postsynthetic Cd treatment, while the doping is monitored via the intraband optical absorption at 5 μm wavelength. Photoluminescence lifetime and quantum yield measurements show that the CdS shell greatly increases the intraband emission intensity. This indicates that decoupling the excitation from the environment reduces the nonradiative recombination. We find that weakly n-type HgSe/CdS are the brightest solution-phase mid-infrared chromophores reported to date at room temperature, achieving intraband photoluminescence quantum yields of 2%. Such photoluminescence corresponds to intraband lifetimes in excess of 10 ns, raising important questions about the fundamental limits to achievable slow intraband relaxation in quantum dots.

We calculate the conductance through strongly correlated T-shaped molecular or quantum dot systems under the influence of phonons. The system is modelled by the extended Anderson-Holstein Hamiltonian. The finite-U mean-field slave boson approach is used to study many-body effects. Phonons influence both interference and correlations. Depending on the dot unperturbed energy and the strength of electron-phonon interaction the system is occupied by a different number of electrons which effectively interact with each other repulsively or attractively. This leads together with the interference effects to different spin or charge Fano-Kondo effects, Comment: 16 pages, 11 figures

Floquet-Bloch lattices are systems in which wave packets are subjet to periodic modulations both in time and space, showing rich dynamics. While this type of lattice is difficult to implement in solid-state physics, optical systems have provided excellent platforms to probe their physics: among other effects, they have revealed genuine phenomena such as the anomalous Floquet topological insulator and the funnelling of light into localised interface modes. Despite the crucial importance of the band dispersion in the photon dynamics and the topological properties of the lattice, the direct experimental measurement of the Floquet-Bloch bands has remained elusive. Here we report the direct measurement of the Floquet-Bloch bands of a photonic lattice with a single shot method. We use a system of two coupled fibre rings that implements a time-multiplexed Floquet-Bloch lattice. By Fourier transforming the impulse response of the lattice we obtain the band structure together with an accurate characterization of the lattice eigenmodes, i. e. the amplitudes and the phases of the Floquet-Bloch eigenvectors over the entire Brillouin zone. Our results open promising perspectives for the observation of topological effects in the linear and nonlinear regime in Floquet systems. Floquet-Bloch lattices are systems that are relatively difficult to implement in solid-state physics. Here, using a photonic lattice as an alternative, the authors experimentally observe Floquet-Bloch bands using a single-shot method which allows them to fully characterise the lattice eigenmode structure.

Carbon dots have been gaining attention in the field of nanobiotechnology due to their superior photostability, high water solubility, ease of synthesis and surface functionalization, chemical inertness, low toxicity, and excellent biocompatibility. They also exhibit good two-photon absorption and unique tunable optical properties across a wide range of wavelengths, from ultraviolet to near infrared endowing them with potential for a variety of biological applications. Recently, there has been a growing interest in the synthesis and development of red-emissive two-photon carbon dots. Here we present recent progress in the design requirements for red-emissive two-photon carbon dots, and review current state-of-the-art systems, covering their applications in bioimaging, biosensing, and photothermal and photodynamic therapy. Carbon dots are suitable for a range of biological applications due to their unique physicochemical properties and biological behavior. This Review summarizes research related to the emerging field of red-emissive two-photon carbon dots for bioimaging, biosensing, and phototherapeutic applications.

Abstract Exchange-coupled spin valves based on ferromagnetic alloys CoFeNi and antiferromagnetic alloy FeMn are obtained on flexible polyimide substrates by magnetron sputtering. The magnetoresistive properties of films and microstrips of spin valves are measured at various degrees of bending deformation of the sample. The behavior of the dependence of the deformation sensitivity of the spin valve on the interaction between the magnetic layers and on the arrangement of the anisotropy axes with respect to the deformation vector is characterized. It is found that the deformation sensitivity decreases with an increase in the interval between the fields of magnetization reversal of the free and fixed layers in the spin valve.

Object of study. We investigate Hewlett Packard green LEDs (λmax = 525 nm at room temperature) based on an InGaN solid solution with quantum wells. Purpose of the Study. It is known that in light-emitting structures, optical characteristics are closely related to electrical characteristics. Analysis of the literature has shown the effect of the structure (number and width of quantum wells) on the electrical characteristics of the objects under study. Thus, the determination of the parameters of structures based on GaN and its solid solutions from the analysis of electrical characteristics is an urgent problem. The aim of this work is to test the application of the generalized recombination model for analyzing the reverse current-voltage characteristics of InGaN-based structures under illumination. Methods and Approaches Used. The paper considers the reverse current-voltage characteristics of structures with quantum wells under illumination with the same “junction-to-junction” LED from the point of view of the generalized model of recombination. The results of measurements and calculations using the generalized recombination model are compared with the distribution profile of the dopant obtained from the inverse capacitance-voltage characteristics. Main Results. It has been shown that three processes are involved in the formation of reverse current-voltage characteristics under illumination: photogeneration, recombination, and tunneling. When the structure is illuminated with the same LED in quantum wells, the photorecombination process plays a leading role. An expression has been obtained that describes the current through the sample in this case.

International audience; Doping of transition metals within a semiconductor quantum dot (QD) has a high impact on the optical and magnetic properties of the QD. In this study, we report the synthesis of Mn 2+-doped Ag−In−Ga−Zn−S (Mn:AIGZS) QDs via thermolysis of a dithiocarbamate complex of Ag + , In 3+ , Ga 3+ , and Zn 2+ and of Mn(stearate) 2 in oleylamine. The influence of the Mn 2+ loading on the photoluminescence (PL) and magnetic properties of the dots are investigated. Mn:AIGZS QDs exhibit a diameter of ca. 2 nm, a high PL quantum yield (up to 41.3% for a 2.5% doping in Mn 2+), and robust photo-and colloidal stabilities. The optical properties of Mn:AIGZS QDs are preserved upon transfer into water using the glutathione tetramethylammonium ligand. At the same time, Mn:AIGZS QDs exhibit high relaxivity (r 1 = 0.15 mM −1 s −1 and r 2 = 0.57 mM −1 s −1 at 298 K and 2.34 T), which shows their potential applicability for bimodal PL/magnetic resonance imaging (MRI) probes.

Due to complex structure and surface functionalities, photoluminescence mechanisms of Carbon Dots are unknown, and it is challenging to synthesize Carbon Dots to achieve the desired optical properties. Herein, Carbon Dots simultaneously exhibiting high-color-purity (FWHM~24 nm) long wavelength one-photon fluorescence emission at 620 nm and NIR induced two-photon fluorescence emission at 630 and 680 nm are prepared by edge amino protonation treatment. Systematic analysis reveals that the protonation of 2,3-diaminophenazine changes the molecular state of Carbon Dots, decreases the photon transition band gap, and triggers red fluorescence emission with the dramatically narrowed peak width. As the oxidation products of reactant o-phenylendiamine, the emergence of 2,3-diaminophenazine as a photoluminescence determiner suggests that fluorophore products of precursor conversion are viable determinants of the desired luminescence properties of Carbon Dots. This work shows a new way for predicting and controlling photoluminescence properties of Carbon Dots, and may guide the development of tunable Carbon Dots for a broad range of applications., Carbon dots have garnered great interest due to their optical properties, however, engineering of the optical properties remains a challenge. Here, Zhang et al. produce carbon dots with a high color purity, providing a useful approach for engineering the optical properties of carbon dots.