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202. Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3D charge trap flash memory

207. Semiconducting Carbon Nanotube Schottky Diode and Integrated Circuit Applications

211. Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel

213. 19-3: Late-News Paper: Universal Method to Determine the Dynamic NBIS- and PBS-induced Instabilities on Self-aligned Coplanar InGaZnO Thin-film Transistors

214. Three-Dimensionally Printed Micro-electromechanical Switches

218. Effect of oxygen content of the LaAlO 3 layer on the synaptic behavior of Pt/LaAlO 3 /Nb-doped SrTiO 3 memristors for neuromorphic applications

220. Ohmic contact probed by dark injection space-charge-limited current measurements.

222. Community facilities as a 'global platform': the global centres in Seoul, Korea

228. Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques

232. Breast cancer-derived extracellular vesicles stimulate myofibroblast differentiation and pro-angiogenic behavior of adipose stem cells

235. Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

236. 21-4: Distinguished Paper : Experimental Decomposition of the Positive Bias Temperature Stress-induced Instability in Self-aligned Coplanar InGaZnO Thin-film Transistors and its Modeling based on the Multiple Stretched-exponential Functions

242. Automatic image fusion of real-time ultrasound with computed tomography images: a prospective comparison between two auto-registration methods

243. A prospective comparison between auto-registration and manual registration of real-time ultrasound with MR images for percutaneous ablation or biopsy of hepatic lesions

245. Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponential functions

248. Cost-effective fabrication of In0.53Ga0.47As-on-insulator on Si for monolithic 3D via novel epitaxial lift-off (ELO) and donor wafer re-use

249. First demonstration of a wrap-gated CNT-FET with vertically-suspended channels

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