201. Sonos Nonvolatile Memory Cell Programming Characteristics
- Author
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Fat D. Ho, Thomas A. Phillips, and Todd C. MacLeod
- Subjects
Hardware_MEMORYSTRUCTURES ,Materials science ,business.industry ,Charge (physics) ,Hardware_PERFORMANCEANDRELIABILITY ,Condensed Matter Physics ,Flash memory ,Electronic, Optical and Magnetic Materials ,law.invention ,Non-volatile memory ,Hardware_GENERAL ,Control and Systems Engineering ,law ,Charge trap flash ,Hardware_INTEGRATEDCIRCUITS ,Materials Chemistry ,Ceramics and Composites ,Optoelectronics ,Tunneling current ,Electrical and Electronic Engineering ,business ,Drain current ,Hardware_LOGICDESIGN ,Voltage ,EEPROM - Abstract
Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. more...
- Published
- 2011
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