691 results on '"Brandt, Oliver"'
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202. Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots
203. Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime
204. Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy
205. (Al,Ga)OxMicrowire Ensembles on Si Exhibiting Luminescence over the Entire Visible Wavelength Range
206. Simulations of the electronic properties of GaAs polytype superlattices
207. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
208. Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence
209. Impact of substrate nitridation on the growth of InN on In 2 O 3 (111) by plasma-assisted molecular beam epitaxy
210. Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures
211. Crystal-phase quantum dots in GaN quantum wires
212. Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene.
213. Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry.
214. Differential IgG Recognition of Desmoglein 3 by Paraneoplastic Pemphigus and Pemphigus Vulgaris Sera
215. Radial Stark Effect in (In,Ga)N Nanowires
216. Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires
217. Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature
218. Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy
219. Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films
220. Impact of individual dopants on the electronic properties of axial InxGa1−xN/GaN nanowire heterostructures
221. In-plane sixfold symmetry forα-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constantK3of Fe
222. High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN
223. Impact of Random Dopant Fluctuations on the Electronic Properties of InxGa1–xN/GaN Axial Nanowire Heterostructures
224. Brandschutz in Parkgebäuden
225. Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires
226. Monitoring the Formation of Nanowires by Line-of-Sight Quadrupole Mass Spectrometry: A Comprehensive Description of the Temporal Evolution of GaN Nanowire Ensembles
227. Electronic properties of axial In $$_x$$ x Ga $$_{1-x}$$ 1 - x N insertions in GaN nanowires
228. Lokalisiertes Lernen oder funktionale Spezialisierung - wie nachhaltig gelingt die Integration von gering Qualifizierten in den regionalen Arbeitsmarkt? : Antworten aus Niedersachsen
229. Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces.
230. The anti-inflammatory potency of dexamethasone is determined by the route of application in vivo
231. GaN Films and Quantum Wells with Nonpolar Surfaces: Growth and Structural Properties
232. Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors
233. Eine kaum beachtete unerwünschte Wirkung. Diarrhoe bei Drospirencon-haltigen oralen Kontrazeptiva
234. Origin of the nonradiative decay of bound excitons in GaN nanowires
235. Luminescence associated with stacking faults in GaN
236. Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy
237. Minimizing the influence of surface potentials in axial InxGa1−xN/GaN nanowire heterostructures by reducing their diameter
238. Risk of sensitization and allergy in Ragweed workers – a pilot study
239. Statistical Analysis of the Shape of One-Dimensional Nanostructures: Determining the Coalescence Degree of Spontaneously Formed GaN Nanowires
240. Radiative and nonradiative decay of excitons in GaN nanowires
241. Uniaxial magnetic anisotropy in epitaxial α-Fe(h0ℓ) films
242. Input/Output and Dynamics of Heavy Metals and Arsenic in River Wetlands - a Case Study in the Wetlands of River Mulde between Bitterfeld/Wolfen and Dessau, Saxony-Anhalt
243. Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene
244. Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy
245. Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy
246. Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells
247. Narrow-band photodetection based on M-plane GaN films
248. Strain Engineering of Nanowire Multi-Quantum Well Demonstrated by Raman Spectroscopy
249. Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires
250. Influence of surface and polarization potentials on the electronic and optical properties of InxGa1−xN/GaN axial nanowire heterostructures
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