201. Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device
- Author
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Jie Liu, You-Mei Sun, Li-Hua Mo, Tao Liu, and Bing Ye
- Subjects
Physics and Astronomy (miscellaneous) ,Proton ,General Mathematics ,01 natural sciences ,Upset ,SRAM ,single-event upset ,on-orbit error rate ,low-energy proton ,Nuclear physics ,Low energy ,0103 physical sciences ,Nano ,Computer Science (miscellaneous) ,Static random-access memory ,010302 applied physics ,Orbital elements ,Physics ,010308 nuclear & particles physics ,lcsh:Mathematics ,Space radiation ,lcsh:QA1-939 ,Chemistry (miscellaneous) ,Single event upset ,Astrophysics::Earth and Planetary Astrophysics - Abstract
The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.
- Published
- 2020