Search

Your search keyword '"Bagatin, M"' showing total 476 results
Start Over Author "Bagatin, M"
476 results on '"Bagatin, M"'

204. The wall conditioning techniques in RFX

Author

Sonato, P, primary, Baker, W.R., additional, Fiorentin, P, additional, Marchiori, G, additional, Zaccaria, P, additional, Zollino, G, additional, Antoni, V, additional, Bagatin, M, additional, Desideri, D, additional, Serianni, G, additional, Tramontin, L, additional, and Bertoncello, R, additional

Published
1996
Full Text
View/download PDF

206. Plasma wall interaction and energy fluxes in RFX

Author

Antoni, V., primary, Bagatin, M., additional, Bergsåker, H., additional, Della Mea, G., additional, Desideri, D., additional, Martines, E., additional, Rigato, V., additional, Serianni, G., additional, Sonato, P., additional, Tramontin, L., additional, and Zandolin, S., additional

Published
1995
Full Text
View/download PDF

207. RFX diagnostics

Author

Bagatin, M, primary, Buffa, A, additional, Antoni, V, additional, Bassan, M, additional, Carraro, L, additional, Costa, S, additional, Desideri, D, additional, Gadani, G, additional, Giudicotti, L, additional, Innocente, P, additional, Martin, P, additional, Martini, S, additional, Monari, M, additional, Moresco, M, additional, Murari, A, additional, Parini, A, additional, Pasqualotto, R, additional, Puiatti, M.E, additional, Sardella, A, additional, Scarin, P, additional, Valisa, M, additional, and Zilli, E, additional

Published
1995
Full Text
View/download PDF

208. Confinement studies on RFX

Author

Antoni, V, primary, Apolloni, L, additional, Bagatin, M, additional, Baker, W, additional, Bassan, M, additional, Bellina, F, additional, Benfatto, L, additional, Bergsaker, H, additional, Buffa, A, additional, Campostrini, P, additional, Cappello, S, additional, Carraro, L, additional, Casarotto, E, additional, Chitarin, G, additional, Collarin, P, additional, Costa, S, additional, Lorenzi, A De, additional, Desideri, D, additional, Fauri, M, additional, Ferrer, C, additional, Fiorentin, P, additional, Gaio, E, additional, Giudicotti, L, additional, Gnesotto, F, additional, Guarnieri, M, additional, Guatieri, R, additional, Hemming, O, additional, Innocente, P, additional, Kusstatscher, P, additional, Luchetta, A, additional, Malesani, G, additional, Manduchi, G, additional, Marchiori, G, additional, Martin, P, additional, Martines, E, additional, Martini, S, additional, Maschio, A, additional, Moresco, M, additional, Murari, A, additional, O'Leary, P, additional, Paccagnella, R, additional, Pasqualotto, R, additional, Piovan, R, additional, Pomaro, N, additional, Puiatti, M E, additional, Rostagni, G, additional, Sardella, A, additional, Scarin, P, additional, Schmidt, V, additional, Serianni, G, additional, Sonato, P, additional, Spada, E, additional, Stella, A, additional, Toigo, V, additional, Tramontin, L, additional, Trevisan, F, additional, Valisa, M, additional, Vitturi, S, additional, Zaccaria, P, additional, Zilli, E, additional, and Zollino, G, additional

Published
1993
Full Text
View/download PDF

212. Langmuir and heat flux probes for RFX

Author

Antoni, V., primary, Bagatin, M., additional, Desideri, D., additional, Pomaro, N., additional, Gadani, G., additional, Gaggini, P., additional, Monari, M., additional, and Parini, A., additional

Published
1992
Full Text
View/download PDF

215. A New Hardware/Software Platform and a New lIE Neutron Source for Soft Error Studies: Testing FPGAs. at the ISIS Facility.

Author

Violante, M., Sterpone, L., Manuzzato, A., Gerardin, S., Rech, P., Bagatin, M., Paccagnella, A., Andreani, C., Gorini, G., Pietropaolo, A., Cardarilli, G., Pontarelli, S., and Frost, C.

Subjects
FIELD programmable gate arrays, COMPUTER input-output equipment, COMPUTER software, ION bombardment, NEUTRON beams, SPECTRUM analysis
Abstract

We introduce a new hardware/software platform for testing SRAM-based FPGAs under heavy-ion and neutron beams, capable of tracing the bit-flips in the configuration memory back to the physical resources affected in the FPGA. The validation was performed using, for the first time, the neutron source at the RAL-ISIS facility. The ISIS beam features a 1/E spectrum, which is similar to the terrestrial one with an acceleration between 107 and 108 in the energy range 19-100 MeV. The results gathered on Xilinx SRAM-based FPGAs are discussed in terms of cross section and circuit-level modifications. [ABSTRACT FROM AUTHOR]

Published
2007
Full Text
View/download PDF

217. Perineural invasion by carcinoma of the lower lip

Author

Bagatin, M., Orihovac, Z., and Mohammed, A.M.

Abstract

Extension of lip cancer to the mental nerve and perineural spread was found in four patients. The main complaint in all cases was sensory disturbance which preceded the diagnosis of recurrence by perineural spread as well as widening of the mandibular canal. In one patient, two cranial nerves, the trigeminal and the facial were involved and one patient had bilateral neural involvement. Three patients died within 1 year of the diagnosis of perineural spread. Prevention includes the separate examination of specimens at the resection line near the mental nerve, and follow-up by examination of the lower vestible, X-ray of the mandible and monitoring of sensory disturbance.

Published
1995
Full Text
View/download PDF

218. Investigation of plasma facing components and vacuum vessel in RFX

Author

Sonato, P., Antoni, V., Bagatin, M., Baker, W.R., Peruzzo, S., Tramontin, L., Zaccaria, P., and Zollino, G.

Abstract

The first wall components of RFX have been investigated after three years of operation and four boronization processes. The main damage is due to arcs and localized erosion. 112 new reshaped tiles have been installed and the removed ones have been carefully analysed in order to evaluate the effects due to plasma interaction. A strong redeposition of carbon and boron has been observed near the most damaged tiles. The redeposition pattern exhibits toroidal and poloidal asymmetry in agreement with the plasma flow measured in the outer region. For the first time evidence of halo currents flowing from the plasma to the vacuum vessel has been observed and their value has been estimated.

Published
1997
Full Text
View/download PDF

219. Electrostatic turbulence in the edge region of RFX-mod

Author

Serianni, G., Spolaore, M., Vianello, N., Cavazzana, R., Emilio Martines, Pomaro, N., Zuin, M., Agostini, M., Bagatin, M., Antoni, V., Serianni, G, Spolaore, M, Vianello, N, Cavazzana, R, Martines, E, Pomaro, N, Zuin, M, Agostini, M, Bagatin, M, and Antoni, V

Subjects
RFX-mod, RFP, reversed field pinch, electrostatic turbulence

222. Pierre Robin syndrome associated with bilateral femoral aplasia, shortening of upper extremities, right kidney agenesis and left kidney malformation.

Author

Handžić-Ćuk, J., Bagatin, M., and Ćuk, V.

Abstract

A 5-year-old female infant with a extremely rare combination of Pierre Robin syndrome and multiple malformations of the limbs and kidneys is presented. Orthopaedic, hearing, intellectual and speech disabilities and treatment difficulties are discussed. [ABSTRACT FROM AUTHOR]

Published
1997
Full Text
View/download PDF

224. First results on reversed field pinch plasmas with new magnetic boundary in the RFX-mod experiment

Author

Agostini, M., Alfier, A., Antoni, V., Apolloni, L., Auriemma, F., Bagatin, M., Baker, W., Barana, O., Basso, F., Bettini, P., Bolzonella, T., Bonfiglio, D., Bonomo, F., Buffa, A., Canton, A., Cappello, S., Carraro, L., Cavazzana, R., Cavinato, M., Chitarin, G., Cravotta, A., Dal Bello, F. S., Dalla Palma, M., Lorenzi, A., Pasqual, L., Desideri, D., Escande, D. F., Franz, P., Gadani, G., Gaio, E., Garzotti, L., Gazza, E., Giudicotti, L., Gnesotto, F., Gobbin, M., Grando, L., Guo, S. C., Innocente, P., Lorenzini, R., Luchetta, A., Malesani, G., Manduchi, G., Marchiori, G., Marcuzzi, D., Lionello Marrelli, Martin, P., Martines, E., Martini, S., Masiello, A., Milani, F., Moresco, M., Murari, A., Nielsen, P., Ortolani, S., Paccagnella, R., Pasqualotto, R., Peruzzo, S., Piovan, R., Piovesan, P., Pomaro, N., Predebon, I., Puiatti, M. E., Rostagni, G., Sattin, F., Scarin, P., Schmidt, V., Serianni, G., Sonato, P., Spada, E., Spizzo, G., Spolaore, M., Taccon, C., Taliercio, C., Terranova, D., Toigo, V., Valisa, M., Vianello, N., Zaccaria, P., Zanca, P., Zaniol, B., Zanotto, L., Zilli, E., Zollino, G., and Zuin, M.

226. 65 nm technology for HEP: Status and perspective

Author

Valerio, P., Barbero, M. B., Fougeron, D., Gensolen, F., Godiot, S., Menouni, M., Pangaud, P., Rozanov, A., Wang, A., Bomben, M., Calderini, G., Crescioli, F., Genat, J. -F, Le Dortz, O., Marchiori, G., Dzahini, D., Rarbi, F. E., Gaglione, R., Gonella, L., Hemperek, T., Huegging, F., Karagounis, M., Kishishita, T., Krueger, H., Rymaszewski, P., Wermes, N., Ciciriello, F., Corsi, F., Licciulli, F., Marzocca, C., Robertis, G., Loddo, F., Tamma, C., Andreazza, A., Liberali, V., Shojaii, S., Alberto Stabile, Bagatin, M., Bisello, D., Mattiazzo, S., Ding, L., Gerardin, S., Giubilato, P., Neviani, A., Paccagnella, A., Vogrig, D., Wyss, J., Bacchetta, N., Canio, F., Gaioni, L., Nodari, B., Manghisoni, M., Re, V., Traversi, G., Comotti, D., Ratti, L., Vacchi, C., Beccherle, R., Bellazzini, R., Magazzu, G., Minuti, M., Morsani, F., Palla, F., Fanucci, L., Rizzi, A., Saponara, S., Androsov, K., Bilei, G. M., Menichelli, M., Conti, E., Marconi, S., Passeri, D., Placidi, P., Della Casa, G., Demaria, N., Mazza, G., Rivetti, A., Da Rocha Rolo, M. D., Monteil, E., Pacher, L., Gajanana, D., Gromov, V., Hessey, N., Kluit, R., Zivkovic, V., Havranek, M., Janoska, Z., Marcisovsky, M., Neue, G., Tomasek, L., Kafka, V., Sicho, P., Vrba, V., Vila, I., Aguirre, M. A., Muñoz, F., Palomo, F. R., Abbaneo, D., Christiansen, J., Dannheim, D., Dobos, D., Linssen, L., Pernegger, H., Alipour Tehrani, N., Bell, S., Prydderch, M. L., Thomas, S., Christian, D. C., Deptuch, G., Fahim, F., Hoff, J., Lipton, R., Liu, T., Zimmerman, T., Garcia-Sciveres, M., Gnani, D., Mekkaoui, A., Gorelov, I., Hoeferkamp, M., Seidel, S., Toms, K., Witt, J. N., and Grillo, A.

Subjects
Physics, Multidisciplinary, Large Hadron Collider, Pixel, Pixels, Settore ING-INF/01 - Elettronica, Nanotechnology, Pixels, Reliability (semiconductor), Perspective (geometry), CMOS, Electronic engineering, Systems engineering, Nanotechnology, Detectors and Experimental Techniques
Abstract

The development of new experiments such as CLIC and the the foreseen Phase 2 pixel upgrades of ATLAS and CMS have very challenging requirements for the design of hybrid pixel readout chips, both in terms of performances and reliability. To face these challenges, the use of a more downscaled CMOS technology compared to previous projects is necessary. The CERN RD53 collaboration is undertaking a R&D programme to evaluate the use of a commercial 65 nm technology and to develop tools and frameworks which will help to design future pixel detectors. This paper gives a short overview of the RD53 collaboration activities and describes some examples of recent developments.

227. Experimental investigation on the magneto-hydrodynamic interaction in the shock layer on a hypersonic body

Author

Borghi, C. A., Carraro, M. R., Cristofolini, A., Veefkincf, A., Biagioni, L., Fantoni, G., Passaro, A., Capitelli, M., Gianpiero Colonna, Bagatin, M., Zuin, M., C.A. Borghi, M.R. Carraro, A. Cristofolini, A. Veefkind, L. Biagioni, G. Fantoni, A. Passaro, M. Capitelli, G. Colonna, M. Bagatin, and M. Zunin

Subjects
MHD INTERACTION, Physics::Space Physics, PLASMA DIAGNOSTICS, HYPERSONIC PLASMA FLOWS
Abstract

This paper describes the results of an experimental investigation on the effect of the MHD interaction with the plasma of the shock layer above a test body immersed into a hypersonic argon flow. The hypersonic flow is obtained from the high-enthalpy arc-heated wind tunnel of Alta-CPR (Pisa) at Mach 6. Test at heating chamber stagnation pressures of 0.65, 0.85, and 1 bar, and magnetic fields in the range of 0.15-0.35 T, are carried out. The experimental observations are done by means of a set of electrical probes, an optical multi-channel analyser, and a fast shutter CCD camera. In order to maximize the effect of the MHD interaction the Faraday field is shorted ad a magnetic field perpendicular to the test body surface is used. Due to the MHD interaction increases of the distance between the shock front and the body surface are observed. The MHD interaction effect is reduced by the low conductivity of the plasma in the boundary layer above the test body surface.

228. First results on Reversed Field Pinch plasmas with new magnetic plasma boundary in the RFX experiment

Author

Martini, S., Innocente, P., Agostini, M., Alfier, A., Antoni, V., Apolloni, L., Auriemma, F., Bagatin, M., Baker, W., Barana, O., Basso, F., PAOLO BETTINI, Bolzonella, T., Bonfiglio, D., Bonomo, F., Buffa, Antonio, Canton, A., Cappello, S., Cavazzana, L. Carraro R., Cavinato, M., Giuseppe Chitarin, Cravotta, A., Dal Bello, F. S., Dalla Palma, M., Lorenzi, A., Pasqual, Lucia, DANIELE DESIDERI, Escande, D. F., Franz, P., Gadani, G., Gaio, E., Garzotti, L., Gazza, E., LEONARDO GIUDICOTTI, Gnesotto, Francesco, Gobbin, M., Grando, L., Guo, S. C., Lorenzini, R., Luchetta, A., Malesani, Gaetano, Manduchi, G., Marchiori, G., Marcuzzi, D., Marrelli, L., PIERO MARTIN, Martines, E., Masiello, A., Milani, F., Moresco, Maurizio, Murari, A., Nielsen, P., Ortolani, S., Paccagnella, R., Pasqualotto, R., Peruzzo, S., Piovan, R., Piovesan, P., Predebon, I., Pomaro, N., Puiatti, M. E., Rostagni, Giorgio, Sattin, F., Scarin, P., Schmidt, V., Serianni, G., piergiorgio sonato, Spada, E., Spizzo, G., Spolaore, M., Taccon, C., Taliercio, C., Terranova, D., Toigo, V., Valisa, M., Vianello, N., Zaccaria, P., Zanca, P., Zaniol, B., Zanotto, L., Zilli, Enrico, GIUSEPPE ZOLLINO, and Zuin, M.

229. RD53A: A large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades

Author

Monteil, E., Barbero, M. B., Fougeron, D., Godiot, S., Menouni, M., Pangaud, P., Rozanov, A., Breugnon, P., Bomben, M., Calderini, G., Crescioli, F., Le Dortz, O., Marchiori, G., Dzahini, D., Rarbi, F. E., Gaglione, R., Krüger, H., Daas, M., Dieter, Y., Hemperek, T., Hügging, F., Konstantinos Moustakas, Pohl, D., Rymaszewski, P., Standke, M., Vogt, M., Wang, T., Wermes, N., Karagounis, M., Stiller, A., Marzocca, C., Robertis, G., Loddo, F., Licciulli, F., Andreazza, A., Liberali, V., Stabile, A., Frontini, L., Bagatin, M., Bisello, D., Gerardin, S., Mattiazzo, S., Paccagnella, A., Vogrig, D., Bonaldo, S., Bacchetta, N., Gaioni, L., Canio, F., Manghisoni, M., Re, V., Riceputi, E., Traversi, G., Ratti, L., Vacchi, C., Androsov, K., Beccherle, R., Magazzu, G., Minuti, M., Morsani, F., Palla, F., Poulios, S., Bilei, G. M., Menichelli, M., Marconi, S., Placidi, P., Dellacasa, G., Demaria, N., Mazza, G., Pacher, L., Paternò, A., Rivetti, A., Da Rocha Rolo, M. D., Gajanana, D., Gromov, V., Eijk, B., Kluit, R., Vitkovskiy, A., Benka, T., Havranek, M., Janoska, Z., Marcisovsky, M., Neue, G., Tomasek, L., Kafka, V., Vrba, V., Lopez-Morillo, E., Palomo, F. R., Muñoz, F., Vila, I., Jiménez, E. M. S., Abbaneo, D., Christiansen, J., Orfanelli, S., Jara Casas, L. M., Conti, E., Bell, S., Prydderch, M. L., Thomas, S., Christian, D. C., Deptuch, G., Fahim, F., Hoff, J., Lipton, R., Liu, T., Zimmerman, T., Miryala, S., Garcia-Sciveres, M., Gnani, D., Krieger, A., Papadopoulou, K., Heim, T., Carney, R., Nachman, B., Renteira, C., Wallangen, V., Hoeferkamp, M., and Seidel, S.

Subjects
Large Hadron Collider, Pixel, Scale (ratio), Physics::Instrumentation and Detectors, business.industry, Computer science, Phase (waves), Chip, Settore ING-INF/01 - Elettronica, Particle Tracking, Matrix (mathematics), Microelectronics, CMOS, Feature (computer vision), business, Computer hardware, Pixel sensors
Abstract

The Phase 2 upgrades of silicon pixel detectors at HL-LHC experiments feature extreme require- ments, such as: 50x50 μm pixels, high rate (3 GHz/cm2), unprecedented radiation levels (1 Grad), high readout speed and serial powering. As a consequence a new readout chip is required. In this framework the RD53 collaboration submitted RD53A, a large scale chip demonstrator de- signed in 65 nm CMOS technology, integrating a matrix of 400×192 pixels. It features design variations in the analog and digital pixel matrix for testing purposes. An overview of the building blocks will be given together with test results on single chips.

235. Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source.

Author

Andreani, C., Senesi, R., Paccagnella, A., Bagatin, M., Gerardin, S., Cazzaniga, C., Frost, C. D., Picozza, P., Gorini, G., Mancini, R., and Sarno, M.

Subjects
NEUTRON irradiation, FLASH memory, NEUTRON sources
Abstract

This paper presents a neutron accelerated study of soft errors in advanced electronic devices used in space missions, i.e. Flash memories performed at the ChipIr and VESUVIO beam lines at the ISIS spallation neutron source. The two neutron beam lines are set up to mimic the space environment spectra and allow neutron irradiation tests on Flash memories in the neutron energy range above 10 MeV and up to 800 MeV. The ISIS neutron energy spectrum is similar to the one occurring in the atmospheric as well as in space and planetary environments, with intensity enhancements varying in the range 108- 10 9 and 106- 10 7 respectively. Such conditions are suitable for the characterization of the atmospheric, space and planetary neutron radiation environments, and are directly applicable for accelerated tests of electronic components as demonstrated here in benchmark measurements performed on flash memories. [ABSTRACT FROM AUTHOR]

Published
2018
Full Text
View/download PDF

239. A Fast Code Using Nonmagnetic Measurements for RFX Current and Magnetic Field Profile Reconstruction.

Author

Desideri, D., Zabeo, L., Bagatin, M., Chitarin, G., and Piovan, R.

Subjects
*PLASMA devices, *REVERSED field pinches, *PLASMA dynamics
Abstract

Proposes a fast identification code using plasma internal nonmagnetic measurements. Application of the code to reversed field pinch experiment; Formulation of the plasma model; Implementation of the model assumptions related to the machine geometry.

Published
2002
Full Text
View/download PDF

240. The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors.

Author

Stockman, A., Tajalli, A., Meneghini, M., Uren, M. J., Mouhoubi, S., Gerardin, S., Bagatin, M., Paccagnella, A., Meneghesso, G., Zanoni, E., Moens, P., and Bakeroot, B.

Subjects
*MODULATION-doped field-effect transistors, *POWER transistors, *PROTONS, *WIDE gap semiconductors, *IRRADIATION, *ALUMINUM gallium nitride
Abstract

Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm−2, the dynamic ON-resistance is almost completely suppressed at 600 V and $T$ = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance. [ABSTRACT FROM AUTHOR]

Published
2019
Full Text
View/download PDF

243. Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs.

Author

Rossetto, I., Rampazzo, F., Gerardin, S., Meneghini, M., Bagatin, M., Zanandrea, A., Dua, C., di Forte-Poisson, M.-A., Aubry, R., Oualli, M., Delage, S.L., Paccagnella, A., Meneghesso, G., and Zanoni, E.

Subjects
*RADIATION trapping, *ALUMINUM nitrate, *GALLIUM nitride, *PROTONS, *MODULATION-doped field-effect transistors, *ELECTRIC properties of metals
Abstract

Robustness of InAlN/GaN devices under proton radiation is investigated. Several proton fluences ranging from 1 × 10 14 to 4 × 10 14 have been considered on two typologies of devices. Displacement damage is found to be the major responsible of device DC degradation leading to threshold voltage positive shift, ON resistance increase and drain current decrease, in all cases well correlated with proton fluence. Negligible difference is noticed in displacement damage effects measured on different device typologies. Furthermore, device geometry does not influence the impact of proton radiation on main DC parameters, either if gate width or length are considered. Radiation significantly affects trapping properties. A good correlation between the so-called current collapse increase and proton fluence is demonstrated when a high gate drain voltage value is imposed as trapping condition. Moreover radiation enhances the contribution of dynamic ON resistance and transconductance peak variation on current collapse increase. [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
View/download PDF

244. Machine modification for active MHD control in RFX

Author

Sonato, P., Chitarin, G., Zaccaria, P., Gnesotto, F., Ortolani, S., Buffa, A., Bagatin, M., Baker, W.R., Dal Bello, S., Fiorentin, P., Grando, L., Marchiori, G., Marcuzzi, D., Masiello, A., Peruzzo, S., Pomaro, N., and Serianni, G.

Subjects
*PLASMA gases, *TRANSDUCERS, *STAINLESS steel, *ELECTROMECHANICAL devices
Abstract

Recent studies on RFP and Tokamak devices call for an active control of the MHD and resistive wall modes to induce plasma mode rotation and to prevent mode phase locking. The results obtained on RFX, where slow rotation of phase locked modes has been induced, support the possibility of extending active MHD mode control through a substantial modification of the device. A new first wall with an integrated system of electric and magnetic transducers has been realised. A close fitting 3 mm thick Cu shell replaces the 65 mm Al shell. A toroidal support structure (TSS) made of stainless steel replaces the shell in supporting all the forces acting on the torus. A system of 192 saddle coils is provided to actively control the MHD modes. This system completely surrounds the toroidal surface and allows the generation of harmonic fields with m=0 and m=1 poloidal wave number and with a toroidal spectrum up to n=24. [Copyright &y& Elsevier]

Published
2003
Full Text
View/download PDF

245. Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source

Author

Alessandro Paccagnella, M. Sarno, Christopher D. Frost, Giuseppe Gorini, Roberto Senesi, R. Mancini, Simone Gerardin, Carlo Cazzaniga, Marta Bagatin, Carla Andreani, P. Picozza, Andreani, C, Senesi, R, Paccagnella, A, Bagatin, M, Gerardin, S, Cazzaniga, C, Frost, C, Picozza, P, Gorini, G, Mancini, R, and Sarno, M

Subjects
Materials science, VESUVIO, Astrophysics::High Energy Astrophysical Phenomena, Nuclear engineering, Nuclear Theory, Radiation environment, Flash memories, ChipIr, VESUVIO, ISIS spallation neutron source, General Physics and Astronomy, 01 natural sciences, Flash memories, Space exploration, Physics and Astronomy (all), Flash (photography), 0103 physical sciences, ISIS spallation neutron source, Neutron, Nuclear Experiment, neutron irradiation, 010302 applied physics, 010308 nuclear & particles physics, ChipIr, Neutron radiation, lcsh:QC1-999, Neutron temperature, Settore FIS/07 - Fisica Applicata(Beni Culturali, Ambientali, Biol.e Medicin), Radiation environment, Physics::Accelerator Physics, lcsh:Physics, Beam (structure), Spallation Neutron Source, Space environment
Abstract

This paper presents a neutron accelerated study of soft errors in advanced electronic devices used in space missions, i.e. Flash memories performed at the ChipIr and VESUVIO beam lines at the ISIS spallation neutron source. The two neutron beam lines are set up to mimic the space environment spectra and allow neutron irradiation tests on Flash memories in the neutron energy range above 10 MeV and up to 800 MeV. The ISIS neutron energy spectrum is similar to the one occurring in the atmospheric as well as in space and planetary environments, with intensity enhancements varying in the range 108- 10 9 and 106- 10 7 respectively. Such conditions are suitable for the characterization of the atmospheric, space and planetary neutron radiation environments, and are directly applicable for accelerated tests of electronic components as demonstrated here in benchmark measurements performed on flash memories.

Published
2018

246. Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

Author

A. Pezzotta, A. Marchioro, Chun-Min Zhang, Alessandro Paccagnella, Simone Gerardin, Dario Bisello, Marta Bagatin, Devis Pantano, Andrea Baschirotto, Serena Mattiazzo, Mattiazzo, S, Bagatin, M, Bisello, D, Gerardin, S, Marchioro, A, Paccagnella, A, Pantano, D, Pezzotta, A, Zhang, C, and Baschirotto, A

Subjects
Materials science, Semiconductor device modeling, Radiation-hard electronic, Orders of magnitude (temperature), 01 natural sciences, law.invention, law, Front-end electronics for detector readout, 0103 physical sciences, Irradiation, Metal gate, GigaradMOST, Instrumentation, Radiation-hard electronics, Mathematical Physics, 010302 applied physics, 010308 nuclear & particles physics, business.industry, Transistor, Settore FIS/01 - Fisica Sperimentale, Semiconductor device, CMOS, Absorbed dose, Optoelectronics, Electric current, business
Abstract

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. For nMOSFETs, the leakage current shows an increase of 2–3 orders of magnitude, while only moderate degradation for other parameters has been observed. For pMOSFETs, a more severe degradation of parameters has been measured, especially in the drain current. This work is relevant as the evaluation of a new generation of CMOS technologies to be used in future HEP experiments.

Published
2017

247. A New Hardware/Software Platform and a New 1/E Neutron Source for Soft Error Studies: Testing FPGAs at the ISIS Facility

Author

Marta Bagatin, Paolo Rech, Alessandro Paccagnella, A. Manuzzato, Massimo Violante, Christopher D. Frost, Antonino Pietropaolo, Salvatore Pontarelli, Carla Andreani, Simone Gerardin, Gian Carlo Cardarilli, Luca Sterpone, Giuseppe Gorini, Violante, M, Sterpone, L, Manuzzato, A, Gerardin, S, Rech, P, Bagatin, M, Paccagnella, A, Andreani, C, Gorini, G, Pietropaolo, A, Cardarilli, G, Pontarelli, S, and Frost, C

Subjects
Nuclear and High Energy Physics, Engineering, Hardware_PERFORMANCEANDRELIABILITY, Tracing, Single event upset (SEU), FPGA, neutron source, radiation testing, Single Event Upset (SEU), Computer Science::Hardware Architecture, Software, Electronic engineering, Neutron, Static random-access memory, Electrical and Electronic Engineering, Field-programmable gate array, business.industry, Neutron source, Radiation testing, Nuclear Energy and Engineering, Settore FIS/07 - Fisica Applicata(Beni Culturali, Ambientali, Biol.e Medicin), Soft error, neutron sources, ING-INF/01 - ELETTRONICA, Physics::Accelerator Physics, business, Computer hardware, Energy (signal processing)
Abstract

We introduce a new hardware/software platform for testing SRAM-based FPGAs under heavy-ion and neutron beams, capable of tracing the bit-flips in the configuration memory back to the physical resources affected in the FPGA. The validation was performed using, for the first time, the neutron source at the RALILSIS facility. The ISlS beam features a 1/E spectrum, which is similar to the terrestrial one with an acceleration between 107 and 10 8 in the energy range 10-100 MeV. The results gathered on Xilinx SRAM-based FPGAs are discussed in terms of cross section and circuit-level modifications. © 2007 IEEE.

Published
2007

248. Characterization of a DC magnetron sputtering device

Author

M. Spolaore, Emilio Martines, G. Serianni, V. Antoni, Matteo Zuin, Mario Bagatin, Roberto Cavazzana, Daniele Desideri, Desideri, D, Bagatin, M, Spolaore, M, Antoni, V, Cavazzana, R, Martines, E, Serianni, G, and Zuin, M

Subjects
Materials science, magnetic devices, magnetostatics, electromagnetism, magnetron sputtering, plasma, symbols.namesake, Electric field, Electronic engineering, Langmuir probe, Magnetostatic, Electrical and Electronic Engineering, Thin film, Plasma processing, business.industry, Applied Mathematics, Plasma, Sputter deposition, Computer Science Applications, Magnetic field, Computational Theory and Mathematics, Magnetic device, symbols, Optoelectronics, Electron temperature, business
Abstract

Purpose - The aim of this paper is to obtain an extensive experimental characterization of a DC magnetron sputtering device used for plasma processing of materials. Design/methodology/approach - Models and measurements are combined for an interdisciplinary characterization of a DC magnetron sputtering device. Langmuir probes are used for the plasma characterization; the magnetic field is measured by using Hall probes and the data are used to validate a magnetostatic three-dimensional numerical analysis of the device; precision mechanical measurements are done for the target erosion profile and the results are related to a simple estimation formula; a simple model is proposed for the target heating. Findings - Data on magnetic and electric fields, electron temperature and density, plasma potential and target erosion are provided. An estimation of the target heating is proposed. Finally, an application concerning thin film deposition is reported. Research limitations/implications - Measurement of the target surface temperature for the validation of the proposed target heating estimation has not been done. Originality/value - In the field of the electromagnetic processing of materials, the reported extensive device characterization is a valuable set of information for an optimized utilization of DC magnetron sputtering devices. © Emerald Group Publishing Limited.

Published
2005

249. Automatic Langmuir probe measurement in a magnetron sputtering system

Author

V. Antoni, Monica Spolaore, N. Pomaro, G. Serianni, Emilio Martines, A. Buffa, L. Tramontin, Mario Bagatin, Roberto Cavazzana, Daniele Desideri, Spolaore, M, Antoni, V, Bagatin, M, Buffa, A, Cavazzana, R, Desideri, D, Martines, E, Pomaro, N, Serianni, G, and Tramontin, L

Subjects
Materials science, electron temperature, magnetron sputtering, Plasma parameters, ion density, Langmuir probe, Analytical chemistry, Ion current, Surfaces and Interfaces, General Chemistry, Plasma, Sputter deposition, Condensed Matter Physics, Surfaces, Coatings and Films, Magnetic field, symbols.namesake, Physics::Plasma Physics, Sputtering, Materials Chemistry, symbols, Plasma diagnostics, Atomic physics
Abstract

The electron temperature, ion density, plasma potential and magnetic field are measured in a plasma produced by a magnetron sputtering device. The magnetic field has been mapped by measuring the axial and radial components with Hall probes. The plasma parameters have been measured by a diagnostic system consisting of several Langmuir probes with different collecting areas that can be positioned by a linear translator. The automatic analysis system allows one to take into account non-saturation of the ion current due to sheath thickness variation. The Langmuir probes have been used in various conditions of magnetic field and source power with a gas filling pressure of 1 Pa. It has been found that the diagnostic system gives reliable measurements of the plasma parameters in static and inhomogeneous magnetic fields. (C) 1999 Elsevier Science S.A. All rights reserved.

Published
1999

250. Automatic fast fitting of single Langmuir probe characteristics on RFX

Author

Gabriele Manduchi, Emilio Martines, V. Antoni, Mario Bagatin, G. Serianni, D. Desideri, Bagatin, M, Desideri, D, Martines, E, Manduchi, G, Serianni, G, and Antoni, V

Subjects
Physics, Reversed field pinch, Langmuir probe, reversed field pinch, Function (mathematics), Backpropagation, symbols.namesake, RFP, symbols, Curve fitting, Cutoff, Plasma diagnostics, Instrumentation, Algorithm, RFX, Voltage
Abstract

An array of single Langmuir probes is routinely used in the RFX reversed field pinch for time-resolved measurements of edge electron density and temperature. In order to allow an automatic analysis of the large number of current - voltage characteristics, three different methods have been developed, which consider restricted subsets of data with voltage lower than an upper cutoff value. The first one determines this limiting voltage by a neural network based technique, combined with criteria for the rejection of too noisy characteristics. In the second one a standard fitting routine is applied repeatedly to the data while varying the upper cutoff voltage. The third one consists of a numerical technique, where the best fit is obtained by minimizing a properly defined cost function. An error index is also calculated, which allows the reliability of the results to be easily estimated. The best results have been achieved using the last two methods.

Published
1997

Catalog

Books, media, physical & digital resources
See catalog results