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We present the development of a system-on-a-package at millimeter-wave frequencies utilizing a commercially available multichip-module process. This technology has established a platform for integrating multiple components of different material systems to combine digital application-specific integrated circuits (ASICs), radio-frequency integrated circuits, and microelectromechanical devices onto a package. The multilayer polymer thin films also empower the design and fabrication of integral passive devices, including thin-film resistors, filters, and Wilkinson power combiners.

We present the design and development of a K-band surface mount package for ∼10 Watt DC power dissipation devices. The package forms a near hermetic cavity enclosed by liquid crystal polymer (LCP) and copper. The measured junction temperature of ∼10 Watt DC power dissipation is 143.9oC with the base plate at 80oC. The package feedthrough achieves a measured insertion loss of ∼ 0.5 dB to 0.8 dB at K-band frequencies.

We present the design and development of a push-pull inverse class F power amplifier in X band using a novel harmonic matching network. The harmonic matching network is realized by a simple, low-loss, Marchand balun and a harmonic trap circuit. This novel harmonic matching network not only provides 3-dB power combining, but also enables waveform shaping for enhanced efficiency. This 1-stage power amplifier using discrete GaAs pHEMTs achieves a measured saturated output power of 33 dBm with a power added efficiency of 63% and a gain of 10 dB. This amplifier operates at 10 GHz with a 6% fractional bandwidth.

In this paper we present a light weight broadband phased array hybrid receiver module on a multi-layer Liquid Crystal Polymer (LCP) substrate. The phased array module has 8 channels and is designed to operate in the Ka-band, from 32–37 GHz. A broadband linear tapered slot antenna array with a corporate power combiner, chip-on-board MMICs, and all control chips necessary for beam steering are all integrated on a multi-layered near-hermetic LCP substrate. The phased array antenna has a measured bandwidth of 5 GHz with ±30 degree beam steering capability from boresight, and shows less than 6.75 degree of beam squint across the full bandwidth of operation. The total size of the array is 100 mm × 100 mm with a board thickness of only 16 mils and weighs only 12.3 grams.

We present the design and development of a compact resonator and a 4-cell transmission line based on the concept of composite right/left-handed transmission lines (CRLH TL). The CRLH TL is composed of unit cells which are built on a multilayer substrate with series metal-insulator-metal (MIM) capacitors on the top and shunt inductors etched on the ground plane. A compact resonator and a 4-cell CRLH TL are designed and fabricated based on this multi-layer CRLH structure. The experimental results demonstrate that the CRLH TL resonator with a length of 125 mils has a measured resonant frequency at 4.2 GHz. The 4-cell CRLH TL having left-handed band from 1 GHz to 2 GHz with a physical length of 590 mils is also demonstrated. Within this left-handed band, the measured electrical lengths of the TL are 180 degree at 1.031 GHz and 1.712 GHz and 90 degree at 1.109 GHz and 1.435 GHz.

We present the development of a broadband multi-section Wilkinson power combiner on Liquid Crystal Polymer (LCP) with integrated thin film resistors. The designed frequency of operation is from 2–18 GHz. The measured VSWR is better than 1.6∶1, the measured excess insertion loss is less than 1.1dB, and 11dB of isolation is measured across the full band. This work presents the highest performance Wilkinson combiner with the widest bandwidth ratio of 9∶1 reported in literature.

In this chapter, we present the design and development of thin-film liquid crystal polymer (LCP) surface mount packages for X, K, and Ka-band applications. The packages are constructed using multi-layer LCP films and are surface mounted on a printed circuit board (PCB). Packages include a typical low pass feedthrough design, as well as a new bandpass feedthrough design. Our experimental results demonstrate that the low pass package feedthrough transition including a PCB launch and bond wires achieve a return loss of better than 20 dB and an insertion loss of less than 0.4 dB around Ka-band. We achieve more than 45 dB measured port-to-port isolation of the package across Ka-band. The leak rate of LCP cavities has been found to be 3.6×10–8 atm-cc/s. Experiments show exceptional reliability results for several reliability tests including temperature cycling and prolonged exposure to humidity of packaged amplifiers. Finally, we demonstrate that our bandpass package feedthrough transition including bond wires achieve a 13 dB or higher return loss and less than 0.5 dB insertion loss across K-band. The package transition offers 0.2 dB insertion loss and > 15 dB return loss across X-band, and operates well across 8–27 GHz.

Preface. Acknowledgements. Chapter 1: Fundamentals of Communication Systems. Introduction. 1.1 Communication systems. 1.2 History and Overview of Wireless Communication Systems. 1.3 History and Overview of Wired Communication Systems. 1.4 Communication System Fundamentals. 1.5 Electromagnetics. 1.6 Analysis of circuits and systems. 1.7 Broadband,wideband and narrowband systems. 1.8 Semiconductor technology and devices. 1.9 Key circuit topologies. 1.10 Gain/Linearity/Noise. Conclusion. Chapter 2: Wireless Communication Systems Architectures. Introduction. 2.1 Fundamental considerations. 2.2 Link Budget Analysis. 2.3 Propagation Effects. 2.4 Interface Planning. 2.5 Superheterodyne architecture. 2.6 Low IF architecture. 2.7 Direct conversion architecture. 2.8 Two stage direct conversion. 2.9 Current mode architecture. 2.10 Subsampling architecture. 2.11 Multi-band direct conversion radio. 2.12 Polar modulator. 2.13 Harmonic reject architectures. 2.14 Practical considerations for transceiver integration. Conclusion. Chapter 3: Systems Architectures for High Speed Wired Communications. 3.1 Introduction. 3.2 Band-limited channel. 3.3 Equalizer system study. References. Chapter 4: Mixed Signal Communication Systems Building Blocks. Introduction. 4.1 Inverters. 4.2 Static D flipflop. 4.3 Bias circuits. 4.4 Transconductor cores. 4.5 Load networks. 4.6 A versatile analog signal processing core. 4.7 Low noise amplifier. 4.8 Power amplifiers. 4.9 Balun. 4.10 Signal Generation Path. 4.11 Mixers. 4.12 Baseband filters. 4.13 Signal strength indicator (SSI). 4.14 ADC/DAC. Conclusion. Chapter 5 Examples of Integrated Communication Microsystems. Introduction. 5.1 Direct conversion receiver front-end. 5.2 Debugging: A practical scenario. 5.3 High speed wired communication example. Conclusion. References. Chapter 6: Low voltage, low power and low area designs. Introduction. 6.1. Power consumption considerations. 6.2 Device technology and scaling. 6.3 Low voltage design techniques. 6.4 Injection locked techniques. 6.5. Subharmonic architectures. 6.6. Superregenerative architectures. 6.7. Hearing aid applications. 6.8. Radio frequency identification tags. 6.9. Ultra low power radios. Conclusion. References. Chapter 7: Packaging for Integrated Communication Microsystems. Introduction. 7.1. Background. 7.2 Elements of a package. 7.4 Driving Forces for RF Packaging Technology. 7.5 MCM Definitions and Classifications. 7.6 RF - SOP modules. 7.7 Package modeling and optimization. 7.8 Future packaging trends. 7.9 Chip Package Co-design. 7.10 Package models and transmission lines. 7.11 Calculations for package elements. 7.12 Cross-talk. 7.13 Grounding. 7.14 Practical issues in working with packages. 7.15 Chip-package codesign examples. 7.16 Wafer scale package. 7.17 Filters using bondwire. 7.18 Packaging Limitation. Conclusion. References. Chapter 8: Advanced SOP Components and Signal Processing. Introduction. 8.1 History of compact design. 8.2 Previous Techniques in Performance Enhancement. 8.3 Design Complexities. 8.4 Modeling Complexities. 8.5 Compact Stacked Patch Antennas Using LTCC Multilayer Technology. 8.6 Suppression of Surface Waves and Radiation Pattern Improvement Using SHS Technology. 8.7 Radiation-Pattern Improvement Using a Compact Soft Surface Structure . 8.8 A Package-Level Integrated Antenna Based on LTCC Technology. Chapter 9: Characterization and Computer aided analysis of integrated microsystems. Introduction. 9.1 Computer aided analysis of wireless systems. 9.2 Measurement equipments and their operation. 9.3 Network analyzer calibration. 9.4 Wafer probing measurement. 9.5 Characterization of integrated radios. 9.6 In the laboratory.

This chapter contains sections titled: Introduction Inverters Static D Flip-Flop Bias Circuits Transconductor Cores Load Networks A Versatile Analog Signal Processing Core Low Noise Amplifier Power Amplifiers Balun Signal Generation Path Mixers Baseband Filters Signal Strength Indicator (SSI) ADC/DAC Latch Conclusion References

This chapter contains sections titled: Introduction Direct Conversion Receiver Front End Debugging: A Practical Scenario High-Speed Wired Communication Example Conclusion References ]]>

This chapter contains sections titled: Introduction Fundamental Considerations Link Budget Analysis Propagation Effects Interface Planning Superheterodyne Architecture Low IF Architecture Direct Conversion Architecture Two-Stage Direct Conversion Current-Mode Architecture Subsampling Architecture Multiband Direct Conversion Radio Polar Modulator Harmonic Reject Architecture Practical Considerations for Transceiver Integration Conclusion References ]]>

This chapter contains sections titled: Introduction Power Consumption Considerations Device Technology and Scaling Low-Voltage Design Techniques Injection-Locked Techniques Subharmonic Architectures Super-Regenerative Architectures Hearing Aid Applications Radio Frequency Identification Tags Ultra-Low-Power Radios Conclusion References

Introduction Communication Systems History and Overview of Wireless Communication Systems History and Overview of Wired Communication Systems Communication System Fundamentals Electromagnetics Analysis of Circuits and Systems Broadband, Wideband, and Narrowband Systems Semiconductor Technology and Devices Key Circuit Topologies Gain/Linearity/Noise Conclusion References

We present the development of thin-film Liquid Crystal Polymer (LCP) surface mount packages with a novel bandpass feedthrough at K-band (18 – 27 GHz). The packages are constructed using multi-layer LCP films and can be surface mounted on a printed circuit board. Our experimental results demonstrate that the bandpass package feedthrough transition including bond wires achieve a return loss of 13 dB or higher and an insertion loss of less than 0.5 dB across K-band. The package transition offers 0.2 dB insertion loss and ≫15 dB return loss across X-band, and operates well across 8 – 27 GHz.

This paper presents an integrated balun design optimized for low insertion loss and minimal imbalance. The concept of an integrated dual-band balun is proposed to significantly improve the integration and reliability of WLAN a/b/g transceivers. The design has been implemented in standard 90nm CMOS technology. The measured minimum insertion loss (ILmin) is 1.6 dB in the 2.4 GHz band, and 1.2 dB at 5.6 GHz. The measured phase imbalance is less than 0.4deg, and the amplitude imbalance is below 0.1 dB, in both frequency bands. Attributed to its symmetry, the balun yields more than 40 dB attenuation of undesired mode conversions. The balun core occupies 220 mum x 220 mum, and has the lowest measured insertion loss reported to date for integrated baluns in standard CMOS.

We demonstrate a compact monolithically-integrated InP optical arbitrary waveform generator, consisting of an arrayed waveguide grating pair with 10 GHz channel spacing, 10 high-speed optical amplitude modulators, and 10 high-speed optical phase modulators.

We present the development of a Ka-band receiver module using liquid crystal polymer (LCP) thin-film surface mount packages. The packages are constructed using multi-layer LCP films and can be surface mounted on a printed circuit board (PCB). The package utilizes vias to connect the RF input from the PCB signal launch onto the package substrate. The use of an LCP enclosure provides near-hermetic capabilities in a compact structure. The receiver module consists of a low-noise amplifier (LNA), an image-rejection mixer and a driver amplifier. The surface mount package feedthrough simulation predicts better than 20 dB return loss up to 42 GHz. We show the conversion gain measurement of the receiver and derive a chart that explains sources of loss in the module. From the chart we discern that the package feedthrough loss is approximately 0.7 dB at 38.4 GHz.

We present the development of a microwave push-pull power amplifier (PA) module that achieves both high output power and wide bandwidth 2nd-order harmonic cancellation from 6 GHz to 18 GHz. Measured PldB output power for the push-pull PA is 31 dBm, while its 2nd-order harmonic distortion is reduced by a minimum 20 dB throughout the 6-18 GHz passband compared to a single PA. The 2nd-harmonic output of the push-pull PA was also measured to be lower than -40 dBc all the way up to 36 GHz. The PA module was integrated into a liquid crystal polymer (LCP) substrate that enables the design of wide bandwidth baluns with less than 0.5 dB and 6deg amplitude and phase imbalances, respectively.

We present the electrical characterization of our Liquid Crystal Polymer (LCP) at microwave and millimeter frequencies and the applications of LCP to circuit components. We use several methodologies to determine the electrical characteristics of LCP for microwave and millimeter wave frequencies. Cavity resonators [1], microstrip T-resonators [2], and microstrip ring resonators [1, 3] are measured in order to characterize both the dielectric constant and loss tangent up to 40 GHz. The measured dielectric constant is shown to be steady near 3.0, and the loss tangent stays below 0.002, which is better than conventional FR-4, BT, and polyimide materials. Furthermore, microstrip lines are designed and fabricated on both LCP substrate and other conventional materials in order to compare loss characteristics. The measured insertion loss at 40 GHz of microstrip lines on a LCP substrate (25 mum) and a polyimide substrate (25 mum) is 0.11dB/mm and 0.18 dB/mm, respectively. These results show that LCP has excellent and stable dielectric properties at high frequencies and the data suggests that this material can be used for applications extending through millimeter wave frequencies. LCP's inherent properties such as multi-layer capabilities, excellent electrical properties, flexibility, and near hermetic nature suit it to a wide range of applications such as passive devices, packages, and RF cables. Finally, we demonstrate the development of a banpass filter on LCP flex to achieve an insertion loss less than 1 dB at 6 GHz in the passband, which is comparable to that of LTCC. The microwave characteristics of LCP have provided the feasibility of this material for low cost and high performance substrates for microwave and millimeter wave applications.

We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for optical code division multiplex access (OCDMA) networking applications.

The paper presents the design of a broadband amplifier with two-dimensional linearization. The amplifier features high efficiency and linearity, wide bandwidth, and full integration in 180-nm RF CMOS technology. The experimental results demonstrate that the amplifier achieves a measured 3-dB bandwidth of 3.7 to 8.8 GHz, and a gain of 8.24 dB. The amplifier draws only 55 mA DC current from a 2.8 V power supply. The third-order intermodulation (IM3) is improved by about 11-dB. The measured output power at 1dB compression point (P1dB) and saturation power (Psat) are 15.6 dBm and 19 dBm, respectively. The peak power-added efficiency (PAE) is measured to be 25%, which is the highest efficiency reported for broadband CMOS power amplifiers

We present the development of a CMOS power amplifier covering full-band of emerging ultra wideband (UWB) applications. The UWB amplifier is designed using a combined high-pass and low-pass artificial transmission line architecture to achieve high output power and spectrum pre-shaping for UWB signals. The amplifier is implemented in 180 nm RF CMOS technology and achieves a measured transducer gain of 10.46 dB with corner frequencies at 3 GHz and 12.6 GHz. The measured return loss is less than -10 dB through the whole UWB bandwidth. The measured output power at 1 dB compression point (P1dB) is above 5.6 dBm from 3 to 10 GHz. The measured output-referred third-order intercept point is more than 16.6 dBm. The group delay dispersion is near zero within the passband, and the time domain pulse measurements indicate that the faithful signal reproduction can be achieved for wideband signals.

We present the development of thin-film Liquid Crystal Polymer (LCP) surface mount packages for packaging MMIC's in Ka-band. The packages are constructed using multi-layer LCP films and can be surface mounted on a printed circuit board. Our experimental results demonstrate that the package feed-through transition including bond wires achieve a return loss of ?15 dB at 30 GHz and an insertion loss of less than 1 dB in the Ka-band. With the use of an off-package matching network, we achieve the input return loss of less than ~ ?15 dB from 28 GHz to 31 GHz and less than ~ ?20 dB from 31 GHz to 36 GHz. The use of LCP enclosure provides the near hermetic capabilities in a compact structure.

We present the development of molded liquid crystal polymer (LCP) surface mount packages for millimeter wave applications. We show that a coplanar waveguide transmission line on a molded liquid crystal polymer has a measured insertion loss of less than 0.16 dB/mm. The LCP quad flat no-lead (QFN) has demonstrated a return loss of less than -16dB and insertion loss of less than -1.2 dB at 25 GHz.

We report error-free spectral encoding and decoding operation of an InP monolithic, ultra-compact optical-CDMA encoder/decoder photonic chip pair. The experimental results demonstrate the strong potential for realizing high performance O-CDMA networks with InP micro-systems.

We present the design and development of a multi-layer organic module that can integrate Micro-Electro-Mechanical Systems (MEMS) into a System-in-a-Package (SiP). A cavity formed in Liquid Crystal Polymer (LCP) has been laminated, at low temperature, onto a MEMS silicon switch to create a hermetically sealed package. Multi-layer organic dielectrics can be integrated on top of LCP films to form a 3-D SiP module. The entire SiP hermetically sealed package has a total insertion loss of ~0.1 dB at X-band. The package also passes Method 1014, MIL-STD-883 gross leak and fine leak hermeticity tests. We have demonstrated a 2-bit RF MEMS TTD (True-Time Delay) switched line phase shifter in this multi-layer organic module. The phase shifter achieves an average insertion loss of 1.8 dB/bit, with less than 3° phase shift variation.

We present the development of an empirical nonlinear model for silicon carbide MESFETs. The proposed channel current model is single piece, continuously differentiable and capable of accurately modeling the current-voltage characteristics of SiC MESFETs. The nonlinear model has been implemented in a commercial computer-aided-design (CAD) tool and its validity has been verified against DC I-V curves, S-parameters (up to 8 GHz) and load-pull power measurements.

We present the development of a new adaptive circuit that preserves the performance of a power amplifier (PA) under impedance mismatch caused at the antennas. The circuit includes a phase detector and a phase shifter that dynamically provide the optimal phase of the reflection coefficient at the output of the PA, to achieve the optimal performance under mismatch. Using this technique, the power amplifier maintains its performance close to that at 50 /spl Omega/, even under severe mismatch of VSWR 10:1. A 900 MHz CDMA GaAs power amplifier achieves an improvement of 6.4 dB in IP3 and 6.9 dB in the P/sub 1dB/ in a high power mode (28.5 dBm) at a VSWR of 10:1. The same PA in low power mode (18.6 dBm) has improvement of 4.35 dB in IP3 and 2.3 dB in P/sub 1dB/ at a VSWR of 10:1. A SiGe PA at 2.4 GHz using the adaptive technique shows an improvement in IP3, by 5.8 dB, and in P/sub 1dB,/ by 4.5 dB, at a VSWR of 20:1.

In this paper, we present the design and development of two low loss, ultra-wide band, planar Marchand baluns (1). The baluns were implemented in a multi-layered liquid crystal polymer (LCP) flex, and in a LCP film laminated on an organic substrate. The best performing balun achieved a bandwidth exceeding 3.1-10.6 GHz with a less than 0.6 dB insertion loss. The amplitude and phase imbalance was measured to be less than 1.2 dB and 2°. The baluns are highly applicable to ultra-wide band communication systems specified by the IEEE 802.15.3a standard. To the best of our knowledge, this is the first reported multi-octave bandwidth balun capable of being implemented in organic substrates using standard printed circuit technologies.

We present the development of a hermetic shield packaging enclosure for RF microelectromechanical system switches (MEMS) using Liquid Crystal Polymer (LCP). A cavity formed in LCP has been laminated, at low temperature, onto a Si MEMS switch to create a hermetically sealed package. The hermetically sealed enclosure is a stack-up layer of the multi-layer organic chip-on-flex system-on-a-package (SOP). The entire SOP hermetically sealed package has a total insertion loss of ∼0.5 dB at X-band. E595 outgas tests demonstrate that the LCP package is reliable and hermetically protects the MEMS switch.Copyright © 2005 by ASME

We present the development of a multilayered Marchand balun that operates over a 4-20 GHz bandwidth. The balun achieves a measured insertion loss of less than 0.5 dB from 4 to 17 GHz, and less than 0.7 dB from 17 to 20 GHz. Measured amplitude and phase imbalances are less than 0.5 dB and 5°, respectively within 4-20 GHz. The balun design employs a novel twin dielectric thin-film thickness structure to achieve a low insertion loss and a wide bandwidth.

We present the design, development and analysis of electromagnetic microwave resonant carbon nanotube bio-sensors. These bio-sensing sensors consist of circular disk electromagnetic resonant circuits coated with single and multi walled carbon nanotubes (SWNTs and MWNTs) that are highly sensitive to adsorbed bio-molecules. The principle operation of these sensors is based on the changes of resonant frequency when the carbon nanotube interface is exposed to bio-materials. Our initial experimental results demonstrate that resonant frequency of the carbon nanotube resonator sensors changes 2 MHz upon exposure to Isopropanol.

We present the design and development of an isolation scheme for highly integrated RF transceivers on a chip. The on-chip isolation structure consists of a 700 /spl mu/m micromachined SU-8 bar and a 100 /spl mu/m V-groove etched beneath a 475 /spl mu/m silicon substrate. We have achieved a measured cumulative isolation of more than 30 dB up to 4 GHz. A variety of backside etch profiles which will further improve the isolation are also to be presented.

We present the design, development and analysis of highly sensitive and ultra-fast responsive electromagnetic microwave resonant sensors for monitoring the presence of gas. These novel sensors consist of circular electromagnetic resonant circuits coated with single and multi walled carbon nanotubes (SWNT & MWNT) that are highly sensitive to adsorbed gas molecules. Upon exposure to ammonia, the electrical resonant frequency of the sensor exhibits a frequency shift of as high as 6.25 MHz. The recovery and response times of these sensors is nominally 10 minutes when operating at room temperatures. This sensor technology is suitable for designing remote sensing systems to monitor gases inside sealed opaque packages and for environmental conditions that do not allow physical wire connections.

We present the design and development of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a 4-inch Si wafer. The GaN HEMT devices demonstrate a maximum drain current of 900 mA/mm, a peak g/sub m/ of 300 mS/mm, and a microwave output power density of 1.5 W/mm. To the best of the authors' knowledge, these are the best results reported on GaN HEMTs on 4-inch Si wafers.

We present the development of a novel organic-micromachined packaging scheme at the wafer level for highly integrated RF transceivers. This process enables the integration of on-chip passive devices and isolation structures at the wafer level. We demonstrate the development of inductors that achieve a Q-factor of about 61 at 1.7 GHz and on-chip isolation structures that provide an isolation of more than 50 dB in the GHz range.

We present the design and development of a low-IF receiver and a fixed wireless utility network. This receiver is designed to achieve a dynamic range of 80 dB, a sensitivity of -105 dBm and a noise figure of 5 dB for a narrow band spread spectrum modulation scheme at 900 MHz. We demonstrate the feasibility of the low-IF receiver for low-cost implementation that alleviates the issue of 60 Hz power line in wireless electricity meter networks.

Major educational barriers exist in providing both quality and quantity of RF and electronic packaging engineers to meet industry needs. Although the National Science Foundation Microsystems Packaging Research Center has done excellent work in revolutionizing its education program with an outreach component, nation-wide students still have limited exposure to the field. For example, students at a nearby engineering institution, Clemson University (1.5-hour drive to Georgia Tech) do not have any courses in electronics packaging. This has been due to the lack of experts in the rapid growth of electronic technology. This is true in the RF electronics and MEMS that represent emerging technologies for developing the next-generation microsystems. Other barriers include the lack of departmental support for offering courses in electronics packaging, where the needs are to fulfil the core and traditional courses.

We present the design, development and characterization of planar and multilayer (3-D) inductor structures fabricated on a multi-layer ceramic-based Multi-Chip-Module (MCM-C) technology. We experimentally demonstrate the feasibility of utilizing both planar and compact 3-D helical inductors for hybrid RF and microwave system implementation. For the same numbers of turns and dimensions as the conventional planar inductor, the 3-D helical inductors occupies significantly less area and demonstrate better quality (Q) factor, higher inductance and comparable self resonant frequency (SRF).

We present the development of a lumped element model for the BGA transition using both measurements and simulations results. Measurements of the test structure are used to generate a circuit model for a single bump configuration. This model is used to calibrate EM simulations of the bump geometry. Furthermore, the effect of the bump diameter on the equivalent circuit model is presented. This model approach is scaleable and extendible to a more global behavior of BGA interconnects for RF packaging.

We present the design and development of the membrane probe prototype for nondestructive characterization of thin-film materials. This material membrane probe (MMP) is designed with multiple polyimide coplanar wave guide transmission lines (CPW), which enable effective and accurate on-wafer Thru-Reflect-Line calibration. This MMP significantly improves upon the calibration integrity and measurements over previous results. We have measured dielectric properties of various materials at microwave frequencies and conclusively demonstrate that the MMP can be used to nondestructively characterize thin-film materials.

We present the design and characterization of a 20-layer ceramic-based multichip module (MCM-C) using low temperature co-fired ceramic (LTCC) at microwave frequencies. Various aspects of this technology have been experimentally investigated, including material properties, the Q factor of passive devices and 3D (multilayer) interconnects. We establish the design rules and demonstrate the feasibility of utilizing LTCC for multi-layer microwave packaging.

We present the design and development of multi-layer organic based MCM's for use at millimeter wave frequencies. In this technology, we utilize a multi-layer interconnect using a vertical stacked via process. We experimentally develop and analyze an equivalent circuit model for this multi-layer interconnect to millimeter wave frequencies. We demonstrate that this vertical interconnect has ultra low parasitics and can be used to realize high performance modules at millimeter wave frequencies.

We present a plastic package characterization technique using coplanar waveguide to package adapters (CPA) and line-reflect-match (LRM) calibrations. LRM calibrations on off-set CPA standards are employed to de-embed the response of CPA adapters in measured S-parameters. A variety of small shrink outline packages (SSOP) has been characterized to 26.5 GHz using this technique.

We apply the on-wafer thru-reflect-line (TRL) and thru-reflect-match calibrations and measurements to evaluate and compare the performance of waveguide and coax fed microprobes at W-band. The results compare the repeatability, isolation, and performance of these probes.

We present the design and development of ultra low loss and high density organic interconnect packaging technology at millimeter wave frequencies. Various microstrip passive components have been designed and characterized to demonstrate that the high density organic interconnect approach is suitable for W-band (75 GHz-110 GHz) packaging. The loss of the organic interconnects has been found to be comparable with that of microstrip lines on alumina substrates at W-band frequencies.