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Current interferometric gravitational wave detectors use the combination of quasi-monochromatic, continuous-wave laser light at 1064 nm and fused silica test masses at room temperature. Detectors of the third generation, such as the Einstein-Telescope, will involve a considerable sensitivity increase. The combination of 1550 nm laser radiation and crystalline silicon test masses at low temperatures might be important ingredients in order to achieve the sensitivity goal. Here we compare some properties of the fused silica and silicon test mass materials relevant for decreasing the thermal noise in future detectors as well as the recent technology achievements in the preparation of laser radiation at 1064 nm and 1550 nm relevant for decreasing the quantum noise. We conclude that silicon test masses and 1550 nm laser light have the potential to form the future building blocks of gravitational wave detection. DFG/EXC/QUEST DFG/SFB/TR7 EC/FP7/2007-2013

We have repeated some of our previous measurements of the intra-pixel response of the infrared detector arrays for the Fine Guidance Sensor (FGS) instrument on the James Webb Space Telescope (JWST). This set of tests was performed on a 5 micron cutoff substrate-removed HAWAII-1RG from the new batch of devices produced for JWST. The measurements were done at wavelengths from 650 nm to 1550 nm. The results from these tests indicate that there are no significant differences in the intra-pixel response between the older JWST devices and the new ones. Modeling suggests that the primary contributor to the response profile is diffusion in the bulk detector material., High Energy, Optical, and Infrared Detectors for Astronomy VI, June 22-25, 2014, Montreal, QC, Canada, Series: Proceedings of SPIE; no. 9154

Three InGaAs/InP structures for photodetector applications were grown with different indium compositions by MBE technique. The structural properties of the samples have been obtained by means of high resolution X-ray diffraction and secondary ion mass spectrometry measurements. Three InGaAs/InP metal-semiconductor-metal devices were fabricated at room temperature. The experimental forward and reverse bias current-voltage characteristics of the devices such as ideality factor, barrier height, and saturation current were evaluated considering the structural properties of the grown structures. The carrier recombination lifetime and diffusion length in the devices were also calculated using carrier density and mobility data obtained with Hall effect measurement at room temperature. It was determined that all room temperature fabricated devices improved the Schottky barrier height. Especially, the device fabricated on the lower mismatched structure exhibited barrier height enhancement from 0.2 eV, which is the conventional barrier height to 0.642 eV. In addition, the obtained results show that the room temperature fabricated devices on InGaAs/InP structures can be convenient for infrared photodetector applications. (C) 2014 AIP Publishing LLC.

We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped fiber based master oscillator power amplifier. The effect of repetition frequency of pump source and length of germania-doped fiber has also been investigated. Further, germania doped fiber has been pumped by conventional supercontinuum source based on silica photonic crystal fiber supercontinuum source. At low power, a considerable broadening of 200-300 nm was observed. Further broadening of spectrum was limited due to limited power of pump source. Our investigations reveal the unexploited potential of germania doped fiber for mid-infrared supercontinuum generation. These measurements ensure the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source based on silica and germania fiber ever demonstrated to the date. (C) 2016 Optical Society of America

Date of Conference: 6–11 May 2012 We demonstrate all-fiber-integrated nonlinear CPA system operating at 1550 nm, seeded by a soliton-similariton laser. Chirped 2-μJ pulses are compressed to 700-fs, 0.5-μJ pulses at 1 MHz. Amplifier output is through a strictly singlemode fiber. © 2012 OSA.

We demonstrate all-fiber-integrated nonlinear CPA system operating at 1550 nm, seeded by a solitonsimilariton laser. Chirped 2-μJ pulses are compressed to 700-fs, 0.5-μJ pulses at 1 MHz. Amplifier output is through a strictly singlemode fiber. © OSA 2012.

We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V. © 2011 IEEE.

We report on our most recent results on quantum dot (QD) laser devices around 1550 nm based on InAs/InP QD gain materials. These devices include monolithic QD multi-wavelength lasers (MWLs), mode-locked lasers (MLLs) and distributed feedback (DFB) lasers. The performance and potential applications of fiber communications will be discussed. © 2011 IEEE., 2011 ICO International Conference on Information Photonics, IP 2011, 18 May 2011 through 20 May 2011, Ottawa, ON

[EN] We demonstrate theoretically that photons and acoustic phonons can be simultaneously guided and slowed down in specially designed nanostructures. Phoxonic crystal waveguides presenting simultaneous phononic and photonic band gaps were designed in perforated silicon membranes that can be conveniently obtained using silicon-on-insulator technology. Geometrical parameters for simultaneous photonic and phononic band gaps were first chosen for optical wavelengths around 1550 nm, based on the finite element analysis of a perfect phoxonic crystal of circular holes. A plain core waveguide was then defined, and simultaneous slow light and elastic guided modes were identified for some waveguide width. Joint guidance of light and elastic waves is predicted with group velocities as low as c/25 and 180 m/s, respectively. © 2011 Optical Society of America., This research has received funding from the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement number 233883 (TAILPHOX).

Conference name: Frontiers in Optics 2010 Date of Conference: 24–28 October 2010 Near-infrared light (λ=1550 nm) was coupled into a 100-nm-core Ag/SiO2/Ag waveguide using dipole antennas. We demonstrate that using antennas, the field intensity inside the waveguide can be enhanced by changing the antenna size and location. © 2010 OSA /FiO/LS 2010.

Development of chemical and biochemical sensors is the current need of the society. In this report, we present our investigation on the development of a label-free fibre-optic biosensor based on evanescent wave absorbance to detect the presence of analytes such as bacteria, virus and some clinically important proteins. A simple UV-LED (280 nm) and photodetector combination along with a fibre probe was used for developing cost-effective, user-friendly and field applicable device. To improve the sensitivity of the detection technique, the probe design was modified and the U-bent probe was fabricated by simple procedure. Further, to overcome the problems for using UV light source in the fibre, the localized surface plasmon resonance of noble metal nanoparticles at visible wavelength was exploited as a sensing medium for the biochemical reactions. Our systematic studies in this regard presented in this communication may bring the excitement for developing the waterborne pathogen detection device for house-hold as well as field applications.

Date of Conference: 4-8 Oct. 2009 Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.

High altitude Platforms represent a very attractive solution to enhance space communications in terms of available capacity and system topology. They can be geared with multi-functional payload, both for communications and Earth Observation missions. Thanks to their opportune position, they are the key for optics and RF technology integration in space communications. In this paper we evaluate the feasibility of an optical HAP-GEO-HAP link over more than 80,000 km above the stratosphere. In particular, we consider a system based on 1550 nm technology, that exploits the potentialities of DPSK modulation format with Direct-Detection balanced interferometer receiver, and optical amplifier.

A hybrid integration concept has been investigated which combines the advantages of ultra-low loss silica waveguides and low power consumption polymer thermo-optic switches. A 1/spl times/2 vertical coupler type switch (VCS) has been realised. Preliminary results exhibited a crosstalk of

We report on a broad-band all-optical switch that exhibits high linearity (>30 dB), high switching contrast (>25 dB), and large data wavelength tunability (100 nm). The switching principle is based on four-wave mixing. Two control pulse trains are placed in the gain wavelength region of a 1300-nm semiconductor-optical amplifier. The data signal, however, is at 1550 nm in the transparent wavelength region where four-wave mixing sidebands are generated due to index modulations. The switch is used to sample a 160-Gb/s data signal with a temporal resolution of approximately 1.7 ps.

We experimentally demonstrate 112-Gbit/s PAM-4 over 80 km SSMF at 1550 nm. It is shown, that a channel shortening filter (CSF) matched to the memory of a subsequent MLSE significantly improves the performance while keeping complexity manageable.

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 µm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling. (Some figures in this article are in colour only in the electronic version)

LP01-LP02 mode converters based on UV-written intracore gratings have been fabricated for chromatic-dispersion compensation. The mode converters operate in transmission at wavelengths near 1550 nm with spectral bandwidths of 14-25 nm and coupling efficiencies of as much as 90%. A large negative dispersion of -335 ps/(nm km) is obtained for a compensator consisting of the mode converter and a 1490-m-long few-mode fiber. The compensator shows negative dispersion over a wavelength region of 5 nm. Its figure of merit is estimated to be 370 ps/(nm dB)

Date of Conference: 29 January–1 February 2012 We demonstrate all-fiber, high-power chirped-pulse-amplifier system, operating at 1550 nm. 156-MHz soliton oscillator seeds a two-stage single-mode amplifier with output power of 10 W. After external compression, pulse duration is 0.6 ps. © 2012 Optical Society of America.