Search

Static RAM-based field programmable gate arrays (SRAM-based FPGAs) are widely adopted in trigger and data acquisition systems of high-energy physics detectors for imple-menting fast logic due to their reconfigurability, large real-time processing capabilities and embedded high-speed serial IOs. These devices are sensitive to radiation-induced upsets, which may alter the functionality of the implemented circuit. Presently, their usage on-detector is limited and there is a strong interest in finding solutions for improving their tolerance to radiation-induced upsets. In this paper, we show a novel configuration-redundancy generation and scrubbing technique for SRAM-based FPGAs. It leads to a power saving with respect to other solutions in the literature. Moreover, our technique is compatible with several Xilinx FPGA families. Our solution does not require neither the usage of external memories nor third-party layout tools. We describe an example of our solution applied to a benchmark design implemented in a Xilinx Kintex-7 FPGA. In order to prove the effectiveness of the solution, we present results from a proton irradiation test.

This study concerns the domain of the microelectronics. It consists in study the impact of the 3D morphology of the energy deposit on the Single Event Effect (SEE) modelisation, induced by atmospheric muons. Over a first phase, the approach has consisted in modelize the energy deposit induced by protons in nanometric volumes. For that purpose the use of the Monte Carlo code GEANT4 has allowed to simulate and stock in a database the tracks characteristics of the energy deposit induced by protons. Once the approach validated for the protons, simulations of the energy deposit induced by muons have been realized. A CCD camera has been used in order to measure the radiative atmospheric environment and to constrain the modelization of the energy deposit induced by muons. This study highlights and quantify the contribution of the radial distribution of the energy deposit incuced by protons in nanometric volumes for the SEE prediction. On the other hand, the study shows that the contribution of the radial distribution of the energy deposit induced by muons in nanometric volumes has a negligeable impact on the SEE modelization. It will be interesting to realize measurements of the energy deposit induced by muons in nanometric technologies under accelerator. This will allow to bring experimental data still nonexistant necessary to the developpment of new physical models more accurate on the modelization of the energy deposit induced by muons., Cette étude s'inscrit dans le domaine de la microélectronique. Elle consiste à étudier l'impact de la morphologie 3D du dépôt d'énergie sur la modélisation des événements singuliers (SEE) induits par les muons atmosphériques. La démarche a consisté dans un premier temps à modéliser le dépôt d'énergie induits par des protons dans des volumes nanométriques. Pour cela, l'utilisation du code Monte-Carlo GEANT4 a permis de simuler et de stocker dans une base de donnée, les caractéristiques des traces des dépôts d'énergie des protons. Une fois la démarche validée pour les protons, des simulations du dépôt d'énergie induits par des muons ont été réalisées. Une caméra CCD a été utilisée afin de réaliser des mesures de l'environnement radiatif atmosphérique et de contraindre la modélisation des dépôts d'énergie induits par les muons. Cette étude met en évidence et quantifie l'apport de considérer la distribution radiale du dépôt d'énergie induit par des protons pour des volumes nanométriques, dans les calculs de prédiction des SEE. En revanche, l'étude montre que la considération de la distribution radiale du dépôt d'énergie induits par des muons dans des volumes nanométriques a un impact négligeable sur la modélisation des SEE. Il serait intéressant de réaliser des mesures du dépôt d'énergie induit par des muons dans des technologies nanométriques sous accélérateur. Cela permettrait d'apporter des données expérimentales encore inexistantes nécessaires au développement de nouveaux modèles physiques plus précis sur la modélisation du dépôt d'énergie induit par des muons.

Currently, there is a special interest in validating the use of Commercial-Off-The-Shelf (COTS) multi/many-core processors for critical applications thanks to their high performance, low power consumption and affordability. However, the continuous shrinking of transistor geometry and the increasing complexity of these devices dramatically affect their sensitivity to natural radiation, and thus diminish their reliability. One of the most common effects produced by natural radiation is the Single Event Upset which is the bit-flip of a memory content producing unexpected results at application-level. For this reason, manufacturers and users implement hardware and software error-mitigation techniques on multi/many-core processors. In this context, the present work aims at evaluating a new fault-tolerance approach based on N-Modular redundancy (NMR) and partitioning called NMR-MPar by means of 14 MeV neutron radiation ground testing in order to emulate the effects of high-energy neutrons present at avionics altitudes. For evaluation purposes, a case-study is implemented on the 28 nm CMOS KALRAY MPPA-256 many-core processor running two complementary benchmarks applications: a distributed Matrix Multiplication and the Travel Salesman Problem. Radiation experiments were conducted in GENEPI2 particle-accelerator. The correctness of the results of the application when an error is detected confirms the approach&rsquo, s effectiveness and boosts their usage on avionics applications.

Beyond their important economic role in commercial communications, satellites in general are critical infrastructure because of the services they provide. In addition to satellites providing information which facilitates a better understanding of the space environment and improved performance of physics experiments, satellite observations are also used to actively monitor weather, geological processes, agricultural development and the evolution of natural and man-made hazards. Defence agencies depend on satellite services for communication in remote locations, as well as for reconnaissance and intelligence. Both commercial and government users rely on communication satellites to provide communication in the event of a disaster that damages ground-based communication systems, provide news, education and entertainment to remote areas and connect global businesses. The space radiation environment is an hazard to most satellite missions and can lead to extremely difficult operating conditions for all of the equipment travelling in space. Here, we first provide an overview of the main components of space radiation environment, followed by a description of the basic mechanism of the interaction of radiation with matter. This is followed by an introduction to the space radiation hardness assurance problem and the main effects of natural radiation to the microelectronics (total ionizing dose, displacement damage and the single-event effect and a description of how different effects occurring in the space can be tested in on-ground experiments by using particle accelerators and radiation sources. We also discuss standards and the recommended procedures to obtain reliable results.

This paper presents an intended test setup and methodology for testing micro-controller SoCs against the effects of ionizing radiations. The method structure is based on a modular test sequence for test definition, coding, validation and setup. It will be illustrated by the relevant example of a microcontroller solution including lockstep options. Our methodology proposes using low-energy protons for irradiation, and this paper compares this approach with current techniques, showing how proton testing is becoming increasingly interesting, especially for ultra-deep submicron processes in proton dominated environments like low-shielded Low Earth Orbit missions or aircraft avionics. Beyond the convenience of a simplified test setup one of the main advantages of the proton irradiation approach is that it can be used for simultaneous Single Event Effects (SEE) and Total Ionizing Dose (TID) characterization, closer to the "test as you fly" approach.

International audience; This study is driven by the need to optimize reliability and failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. Nowadays, single event effect (SEE) evaluations due to radiation impacts are critical in fault tolerance and security field. The prediction of a SEE occurring on electronic devices is proposed by the determination and modeling of the phenomena under pulsed laser stimulation. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an inverter in a triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals the possible activation change of the parasitic bipolar transistors. Based on these experimental mea- surements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation. Therefore this electrical model could be used as a tool for characterizing more complex CMOS circuits under photoelectrical laser stimulation.

This thesis highlights the effects of natural atmospheric particles. The study mainly focuses on the neutrons impact on highly integrated electronic component. The first part deals with the natural radiative environment and the tests facility. Laser beams facilities are point out. The second part explains the devlopment of a memory test platform which is based on a FPGA and programmed with VHDL. Hardware and software designs are detailed. A microprocessor test platform is presented too. The last part deals with the sensibility evaluation of a 90 nm bulk SRAM memory under a 1064 nm laser. The descrambling of the memory is explained and hardening solutions are proposed; Cette thèse s’intéresse aux effets des particules présentent naturellement dans l’atmosphère. L'étude se focalise principalement sur l'impact des neutrons sur des composants électroniques fortement intégrés. La première partie détaille l'environnement radiatif naturel ainsi que les moyens de tests existants. Les technique de test sous faisceau laser sont mise en avant. La seconde partie s’intéresse au développement d'une plateforme de test de mémoires à base de FPGA programmée en VHDL. Les conceptions matérielle et logicielle sont explicitées. Une plateforme de test pour microprocesseur est également présentée. La dernière partie traite de l'évaluation de la sensibilité d'une mémoire SRAM bulk 90 nm sous faisceau laser 1064 nm. Le décodage de son plan mémoire est effectué et des solutions de durcissement sont suggérées

The SIRAD irradiation facility is located at the Tandem-ALPI accelerating system of the INFN National Laboratories of Legnaro, Italy. SIRAD is devoted to Single Event Effects and bulk damage studies on semiconductor detectors and electronic devices and systems. Here we describe the status of SIRAD by reporting the characteristics of the ion beams, of the irradiation chamber and of the monitoring and dosimetry systems for particle fluence measurements. The Ion Electron Emission Microscope which allows micrometric SEE sensitivity mapping is also briefly described. Single Event Upset (SEU) cross-section measurements of the ESA SEU monitor, presented here, show full compatibility with those obtained at irradiation facilities supported by ESA.

В работе приведено описание разработанных в ЭНПО СПЭЛС лазерных имитационных комплексов семейства «ПИКО», основанных на использовании сфокусированного лазерного излучения пикосекундной длительности и предназначенных для проведения научных исследований и испытаний интегральных схем на стойкость к воздействию высокоэнергетичных отдельных заряженных частиц. Обсуждаются основные требования к лазерным имитаторам подобного класса, представлены краткое описание и технические характеристики созданных комплексов, This work describes the «PICO» laser simulation systems family, utilizing focused picosecond laser pulses for ICs single event effects investigations and tests. The main requirements for such systems are discussed; technical characteristics of designed facilities are presented.

In this contribution we describe how single event effect (SEE) studies will be performed with the ion electron emission microscope (IEEM) of the SIRAD irradiation facility located at the INFN Legnaro Laboratory. The IEEM will be used to locate with micrometric precision the impact points of impinging ions that give rise to SEE in an electronic device under test (DUT). In the IEEM technique the ion beam is not microfocused: the position of single ion impact is reconstructed by locating the secondary electron emission points on the DUT surface. We briefly review the original solutions under implementation at SIRAD, such as the opto-electronic approach used to reconstruct the secondary electron emission points by means of a fast, high-resolution imaging of point-like light sources, and a new IEEM test system under development based on a commercial memory array sensitive to single event upsets.

In small satellite development, general electronic (COTS) devices are needed to use due to some severe restrictions of resource for installed components. For this reason, it is important to keep reliability for using COTS devices in small satellite development. Therefore, in order to ensure reliability for small satellite, our company has evaluated COTS devices mainly for tolerance of single event at Japan Atomic Energy Agency (JAEA) Takasaki Advanced Radiation Research Institute from fiscal year 2008., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889005, レポート番号: JAXA-SP-12-008E

International audience; The purpose of this work is to present one investigation utilizing a pulsed laser as a tool to improve the Single Event Upset tolerance of a memory cell. These results coming with a previous ion testing evaluation of the circuit allow an optimization of the design. The laser results permit a more detailed analysis of the phenomenon leading to the upset and a precise localization of the most sensitive areas. As a result the behavior verification of the design combined with the use of robust elementary blocks strengthens the hardening capabilities of the cell.

International audience; The behaviour of Integrated Circuits (IC), in Space, the high atmosphere or even in earth environment, are adversely affected by radiation. One of the most concerning effect is stochastic, caused by heavy ions of high energy which cannot be shielded. Striking the circuits, the invasive particles induce transient current upsets, being the cause of unpredictable soft errors in combinatorial logic and memory cells. After a brief survey of the phenomenon and its consequences, we report a strategy to improve the hardening capabilities of a standard commercial technology only using a design methodology. We present a new inverter architecture for which robustness is naturally attained during upset. The hardening is carried out through the use of an integrated information redundancy and a double tri-state output. The design prevents errors to propagate and gives an uncorrupted information source. Post layout SPICE simulations of the cells confirm the efficiency of our integrated approach to avoid the induced effect of a pulse shape current generation inside the IC.

1 - Introduction|2 - Ten-Koh Mission Overview|3 - Ten-Koh Communication System Architecture|4 - Proposed SDR Implementation|5 - Results and Discussion|6 - Radiation Test|7 - Conclusion, In nano-satellite missions, Software Defined Radios （SDR） have been widely used in the implementation of communication subsystems in order to increase the flexibilization both in the space segment and on the ground stations. Also, Commercial Off-The-Shelf components （COTS） are widely used to develop subsystems for nano-satellite missions in order to reduce development costs and because those are relatively easy to purchase especially for developing countries. However, COTS components are not space-certified and it becomes a problem when satellites are wanted to be used in high reliability missions. An example of that is Ten-Koh, a Low Earth Orbit （LEO） environment observation satellite developed in the Kyushu Institute of Technology in Japan, in which one of the top-level mission requirements was to re-use as much as possible the components utilized on a previous successful mission （Shinen-2） in order to mitigate the failure risks by using non-certified/non-space heritage components and to decrease the development time following the lean satellite design methodology. In this research, an SDR implementation for the space segment is proposed in order to optimize the communication system designed for Ten-Koh satellite. The proposed implementation consists of the integration of two COTS modules （a single-board computer with a radio frequency module） using embedded Linux, Python and GNU radio developing tools. The purpose is to demonstrate that the proposed system can be used safely in future satellite missions overcoming the design constraints, limitations and issues experimented during the Ten-Koh design and operation phases showing the improvements in terms of performance, flexibility, cost and development time. In addition to above, this research shows the on-orbit issues presented in the Ten-Koh mission due to the radiation effects and describes the facilities, equipment, methodology and results of a radiation test performed for the main processor used in the Ten-Koh mission and for the single-board computer used in the proposed SDR system in order to find the possible causes of the failures presented on-orbit and to compare the results for verifying if the proposed system can be used safely in the radiation environment on LEO orbit., 九州工業大学博士学位論文 学位記番号：工博甲第498号 学位授与年月日：令和2年3月25日, 令和元年度