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In this study, a TiO2-CNT-Ag ternary composite film was successfully synthesized using the plasma-enhanced chemical vapor deposition method by simultaneously feeding a carbon nanotube (CNT)/Ag suspension and titanium tetraisopropoxide gas. The prepared TiO2-CNT-Ag film was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and ultraviolet-visible spectroscopy. Moreover, the Ag/Ti ratio of the film was confirmed using an inductivity-coupled plasma optical emission spectrometer. The performance of the TiO2-composite film for the degradation of rhodamine 6G under simulated solar light irradiation was evaluated. The rate constant of the prepared TiO2-CNT-Ag for rhodamine 6G degradation was approximately 1.8 times greater than that of prepared TiO2. This result indicates that the addition of CNT and Ag significantly improved the photocatalytic activity of the prepared films. [ABSTRACT FROM AUTHOR]

TiO2 is a promising photocatalyst, but its large bandgap restricts its light absorption to the ultraviolet region. The addition of noble metals can reduce the bandgap and electron-hole recombination; therefore, we prepared TiO2-Ag nanoparticle composite films by plasma-enhanced chemical vapor deposition (PECVD) using a mixture of aerosolized AgNO3, which was used as a Ag nanoparticle precursor, and titanium tetraisopropoxide, which acted as the TiO2 precursor. Notably, the use of PECVD enabled a low process temperature and eliminated the need for pre-preparing the Ag nanoparticles, thereby increasing the process efficiency. The structures and morphologies of the deposited films were characterized by ultraviolet (UV)—visible spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy and energy-dispersive X-ray spectroscopy, and the effects of the AgNO3 concentration on the photocatalytic activity of the deposited films were determined by assessing the degradation of methylene blue under UV light irradiation. The Ag ions were successfully reduced to metallic nanoparticles and were embedded in the TiO2 film. The best photocatalytic activity was achieved for a 1 wt% Ag-loaded TiO2 composite film, which was 1.75 times that of pristine TiO2. [ABSTRACT FROM AUTHOR]

This study aimed to investigate the influence of reactive oxygen species (i.e., neutral O atom and O 2 + ion) on deposition rates and film thickness uniformity in tetraethoxysilane (TEOS) plasma, utilizing a combination of plasma-fluid dynamic and quantum chemical (QC) simulations. The plasma simulations employed an improved model based on a previous study [H. Li et al., Jpn. J. Appl. Phys. 58, SEED06 (2019)], specifically tailored for a TEOS/O2/Ar/He gas mixture. In the QC simulations, both flat and step silicon oxide (SiO2) surfaces were employed to investigate the adsorption behavior of SiO molecules, the predominant silicon-containing species in TEOS plasma. These simulations also enabled the examination of the rates of SiO molecule adsorption on SiO2 surfaces, facilitating a direct comparison with the sticking coefficients utilized in the plasma simulation. The results of QC simulations revealed that SiO molecules exhibited a higher energetic preference for adsorption on step surfaces than on flat surfaces, resulting in the formation of new SiOH surface sites. Meanwhile, the plasma simulations demonstrated a strong correlation between the deposition rate and film thickness uniformity and the generation of oxygen species, specifically O atoms and O 2 + ions, as well as their respective fluxes. This relationship takes precedence over the influence of TEOS or its fragments colliding with the surface. Notably, higher plasma source frequencies were found to enhance the production of atomic O, which contributed significantly to achieving higher deposition rates. [ABSTRACT FROM AUTHOR]

Two distinct ultra-thin Ge1−xSnx (x ≤ 0.1) epilayers were deposited on (001) Si substrates at 457 and 313 °C through remote plasma-enhanced chemical vapor deposition. These films are considered potential initiation layers for synthesizing thick epitaxial GeSn films. The GeSn film deposited at 313 °C has a thickness of 10 nm and exhibits a highly epitaxial continuous structure with its lattice being compressed along the interface plane to coherently match Si without mismatch dislocations. The GeSn film deposited at 457 °C exhibits a discrete epitaxial island-like morphology with a peak height of ∼30 nm and full-width half maximum (FWHM) varying from 20 to 100 nm. GeSn islands with an FWHM smaller than 20 nm are defect free, whereas those exceeding 25 nm encompass nanotwins and/or stacking faults. The GeSn islands form two-dimensional modulated superlattice structures at the interface with Si. The GeSn film deposited at 457 °C possesses a lower Sn content compared to the one deposited at lower temperature. The potential impact of using these two distinct ultra-thin layers as initiation layers for the direct growth of thicker GeSn epitaxial films on (001) Si substrates is discussed. [ABSTRACT FROM AUTHOR]

Nanocomposite coatings are made by atmospheric‐pressure plasma‐enhanced chemical vapor deposition from ethyl lactate (EL) and silica nanoparticles (NPs) in a dielectric barrier discharge (DBD) using frequency‐shift keying (FSK) to alternate between 1‐ and 15‐kHz voltages. In situ plasma Fourier‐transform infrared spectroscopy (FTIR) and thin film FTIR, scanning electron microscopy, atomic force microscopy, and profilometry show that (i) 1 kHz DBD mainly deposits NPs, 15 kHz only polymerizes EL; (ii) the EL polymerization rate is the same in FSK and continuous modes; (iii) despite the 50/50 contribution of both frequencies, the NP deposit is three times faster in FSK mode than in 1 kHz DBD and compared with 1 and 15 kHz coatings, in the nanocomposite, NP Si–O–Si and EL C═O bonds per unit length are equal to 68% and 34%, respectively. In situ FTIR detects SiO2 NPs, their functionalization, and the formation of CO2. [ABSTRACT FROM AUTHOR]

Nanotwinned Cu (NT-Cu) is a promising candidate for Cu redistribution lines (RDLs). However, oxidation in NT-Cu lines is of concern because it increases electrical resistance and endangers the reliabilities of semiconductor devices such as temperature cycling tests (TCTs). In order to enhance the reliabilities, the passivation of NT-Cu lines is needed. In this study, immersion Ag/Sn and plasma-enhanced chemical vapor deposition (PECVD) SiCN were used to passivate the surfaces of NT-Cu RDLs at low operating temperatures (60 °C for immersion and 150 °C for PECVD). We found that Ag- and SiCN-capped NT-Cu lines showed negligible changes in microstructures and resistance after TCTs. As for Sn-coated NT-Cu lines, the resistance remained stable after 250 cycles of TCTs, with low oxygen signals detected. These three coating layers can block oxygen and moisture, effectively preventing oxidation and maintaining the resistance of NT-Cu RDLs during the TCT. The findings demonstrate the effectiveness of Ag, Sn, and SiCN coatings in enhancing reliability, providing options for passivation layers of NT-Cu RDLs. [ABSTRACT FROM AUTHOR]

Plasma-enhanced chemical vapor deposition (PECVD) was used to obtain several graphite nanowall (GNW)-type films at different deposition times on silicon and copper to achieve various thicknesses of carbonic films for the development of electrochemical sensors for the detection of anthracene. The PECVD growth time varied from 15 min to 30 min to 45 min, while scanning electron microscopy (SEM) confirmed the changes in the thickness of the GNW films, revealing a continuous increase in the series. X-ray diffraction (XRD) analysis revealed that the crystallinity of the GNW film samples increased with increasing crystallite size and decreasing dislocation density as the deposition time increased. Electrochemical characterization of the GNW-based electrodes indicated that the electroactive area and heterogeneous electron transfer rate constant were greater for the GNW 45 min film in the carbonic material series. We present the transfer of GNW films on flexible polyethylene substrates for achieving flexible electrochemical sensors for further use in anthracene determination. The flexible GNW-based electrodes were investigated using differential pulse voltammetry (DPV) in the presence of anthracene. The results showed that the highest sensitivity in anthracene detection was provided by the sensor with the GNW film obtained after 45 min of PECVD growth. The optimization of the GNW film thickness for the development of flexible electrochemical sensors on polyethylene substrates represents a successful approach for enhancing the electrochemical performance of carbonic materials. [ABSTRACT FROM AUTHOR]

In this Letter, we present a p-GaN gate enhancement-mode GaN-on-Si high-electron mobility transistor fabricated using Mg-acceptor re-passivation realized through ammonia plasma treatment. The gate-to-source and gate-to-drain access regions of the device were treated with ammonia plasma using a plasma-enhanced chemical vapor deposition system, resulting in the formation of a high-resistivity GaN cap layer. The fabricated device has a high threshold voltage (VTH) of 2.0 V and a low gate reverse leakage current (IGR) of 10−11 A/mm. A breakdown voltage (BVOFF) of 670 V together with a specific on-resistance (Ron,sp) of 0.87 mΩ cm2 was obtained in a device with LGD = 6 μm. The measured dynamic on-resistance (Ron,d) at a quiescent drain voltage (Vds,q) of 600 V with a stress time of 10 and 120 s is 1.06 and 1.34 times of the static on-resistance (Ron,s), respectively. Good thermal stability of VTH and gate current IG were observed after a thermal stress at 175 °C for 100 h. The developed fabrication techniques exhibit a great potential to be applied into GaN power transistors. [ABSTRACT FROM AUTHOR]

The high surface area and transfer-less growth of graphene on dielectric materials is still a challenge in the production of novel sensing devices. We demonstrate a novel approach to graphene synthesis on a C-plane sapphire substrate, involving the microwave plasma-enhanced chemical vapor deposition (MW-PECVD) technique. The decomposition of methane, which is used as a precursor gas, is achieved without the need for remote plasma. Raman spectroscopy, atomic force microscopy and resistance characteristic measurements were performed to investigate the potential of graphene for use in sensing applications. We show that the thickness and quality of graphene film greatly depend on the CH4/H2 flow ratio, as well as on chamber pressure during the synthesis. By varying these parameters, the intensity ratio of Raman D and G bands of graphene varied between ~1 and ~4, while the 2D to G band intensity ratio was found to be 0.05–0.5. Boundary defects are the most prominent defect type in PECVD graphene, giving it a grainy texture. Despite this, the samples exhibited sheet resistance values as low as 1.87 kΩ/□. This reveals great potential for PECVD methods and could contribute toward efficient and straightforward graphene growth on various substrates. [ABSTRACT FROM AUTHOR]

In this study, for the first time, the optimization of applied pressure for achieving the one of the best tribological properties of diamond-like carbon (DLC) coating on graphite surface using plasma-enhanced chemical vapor deposition (PECVD) method was investigated. Raman spectroscopy and microscopy methods were used to characterize the applied coating. Additionally, the mechanical properties of the coating were investigated through nanoindentation testing. The wear resistance of coating has been tested as functional test. The results indicated that with increasing gas pressure, the sp3 hybridization percentage decreases, while the ID/IG ratio increases. The average roughness values for the uncoated sample and the coated samples at working pressures of 25, 30, and 35 mTorr were obtained as 1.6, 5.1, 3, and 2.4 nm, respectively. The results of hardness and wear tests showed that these properties were optimized by reducing the applied gas pressure. The highest hardness was 11.59 GPa, and the best sample in terms of the mechanical properties of the coating was the sample applied at a gas pressure of 25 mTorr. Results show that the optimal sample in tribological performance is the one applied at a working pressure of 25 mTorr. Because this sample demonstrates the lowest coefficient of friction, and wear depth. [ABSTRACT FROM AUTHOR]

Cubic gauche nitrogen (cg-N) has received wide attention for its exceptionally high energy density and environmental friendliness. However, traditional synthesis methods for cg-N predominantly rely on high-pressure techniques or the utilization of nanoconfined effects using highly toxic and sensitive sodium azide as precursor, which substantially restrict its practical application. On the basis of the first-principles simulations, we found that adsorption of potassium on the cg-N surface exhibits superior stabilization compared to sodium. Then, we chose safer potassium azide as precursor for synthesizing cg-N. Through plasma-enhanced chemical vapor deposition treatment, the free-standing cg-N was successfully synthesized without the need for high-pressure and nanoconfined effects. It demonstrated excellent thermal stability up to 760 K, and then rapid and intense thermal decomposition occurred, exhibiting typical thermal decomposition behaviors of high-energy-density materials. The explosion parameters were also measured using laser-induced plasma spectroscopy. Our work has substantially promoted the practical application of cg-N as HEDMs. [ABSTRACT FROM AUTHOR]

This study reports a direct approach to synthesizing vertically aligned carbon nanorod arrays (VA-CNRA) using microwave plasma-enhanced chemical vapor deposition (MW-PECVD) at 300 °C, on cobalt (Co) catalyst nanoparticles grown by thermal annealing (750 °C) of 10 nm thick Co layer deposited by radio frequency (RF) magnetron sputtering. To grow the VA-CNRA, the gas ratio in the plasma was optimized, focusing on the kinetics of the source gas dissociation and recombination. The reduced concentrations of acetylene (C 2 H 2) impede the optimal alignment of CNRA in the absence of the steric hindrance, resulting in their horizontal growth along the direction of gas flow via the "kite-mechanism". However, at a higher gas flow ratio, the attractive van der Waals potential among the CNRs was anticipated to induce aggregation when they arrive in proximity and vertical growth alignment of the nanorods via the higher deposition rates. Carbon nanorod films were analyzed using various spectroscopic techniques to understand the growth orientations, which suggests that the carbon nanorods were formed via the base-growth mechanism. Nano flower-like VA-CNRA were formed at higher C 2 H 2 /H 2 ratios. Notably, a distinct flower-like structure with whisker-like nanostructure petals was formed at a C 2 H 2 /H 2 flow ratio of ∼0.57. Compared to other nanorod structures, VA-CNRA, grown at optimal gas ratio, exhibited superior crystalline graphite, with 76 % sp 2 C C bonding along with a maximum of I 2D /I G , and a minimum of I D /I G intensity ratio in the Raman data. High-resolution TEM confirmed robust growth of CNRs, with an average diameter of ∼370 ± 3 nm. This innovative method enables large-scale production of VA-CNRA with high surface areas for energy applications. [ABSTRACT FROM AUTHOR]

This study investigates carbon-nitrogen thin films as active materials in photocatalytic methanol reforming, addressing the need for eco-friendly fuels with minimal waste and non-metallic photocatalysts. Additionally, it explores the synthesis of these materials using plasma-enhanced chemical vapor deposition (PECVD) from acrylonitrile or acetonitrile. This area has limited prior attention in carbon-nitrogen materials synthesis, particularly with subsequent application in methanol reforming offering potential advancements in clean energy production. The aim is to develop effective, environmentally friendly sources of hydrogen, where photocatalysts play a crucial role. The studies involved also characterization for morphology, and chemical structure. The results confirmed the activity in hydrogen production through methanol reforming, achieving a promising rate of 82 ± 6 μmol h−1 cm−2. [Display omitted] • Facile preparation of carbon-nitrogen films by cold plasma. • Non-metallic carbon-nitrogen catalysts for hydrogen production. • Hydrogen production rate of 32–82 μmol h−1 cm−2 over studied materials. [ABSTRACT FROM AUTHOR]

We present a study of the structural features of polycrystalline a diamond film (PCDF) synthesized by the microwave plasma-enhanced chemical vapor deposition method from a hydrogen/pentane mixture and consider its photoelectric response to synchrotron radiation. Raman spectroscopy analysis of the PCDF cross-section revealed the presence of sp2-hybridized inclusions. As the distance from the PCDF growth surface increases, the amount of the non-diamond phase also increases, while its morphology changes from amorphous to crystalline graphite-like carbon. The investigation of the photoelectric response of PCDF was carried out at the "Cosmos" station using synchrotron radiation from the VEPP-4M storage ring. The PCDF detector exhibited maximum sensitivity at low bias voltage. This effect was attributed to the increased efficiency of collecting photo-induced charge carriers from the diamond to the sp2-hybridized inclusions followed by their subsequent transport through conductive paths along the boundaries between diamond crystallites. [ABSTRACT FROM AUTHOR]

In typical industrial processing of tunnel oxide passivated contact (TOPCon) solar cells, poly‐Si is deposited on the entire back of the cells. During the deposition process, a wrap‐around of poly‐Si onto the edges and the front side of the cells is virtually unavoidable if chemical vapor deposition processes are used. Plasma‐enhanced chemical vapor deposition (PECVD) is used to investigate very thin poly‐Si films and their effect on wrap‐around on bifacial TOPCon solar cells fabricated without wrap‐around etching. As a result, reduction of the poly‐Si thickness down to 30 nm significantly increases the shunt resistance, reduces the reverse bias current, and thus reduces the risk of hot spots as measured by IR imaging and microcharacterization by secondary electron microscopy. Electroplated metallization proves to be a suitable candidate for contacting such thin TOPCon layers, being less sensitive than screen‐printed metallization. [ABSTRACT FROM AUTHOR]

In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond structure of the amorphous SiNx films. Variation of mechanical and optical properties were also evaluated. It is found that SiNx deposited at low temperature is easily oxidized, especially at elevated temperature and moisture. The hardness and elastic modulus did not change significantly with the increase of oxidation. The changes of the surface morphology, transmittance, and fracture extensibility are negligible. Finally, it is determined that SiNx films deposited at low-temperature with proper processing parameters are suitable for thin-film encapsulation of flexible devices.