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The research and development of diamond as a functional material has been reviewed focusing attention on diamond films synthesized by chemical vapor deposition (CVD). Diamond has a potential as a versatile functional material characterized by unique properties. Initially, a brief overview on the relation between the well-known properties and applications is given. It is shown that practical applications rely on polycrystalline films, while future applications as semiconductors or solid state lasers rely on single crystal films and require further technical advancement in high quality (and high purity) crystal growth, epitaxial growth and impurity doping. It is also pointed out that the unique surface property of diamond provides new fields of applications in addition to those that utilize the known bulk properties. A few examples of interesting applications including surface acoustic wave (SAW) filters andelectrodes for electrochemical uses, and results of surface studies are described in some detail. Interesting topics related to future applications are described briefly covering various categories as an overview for future possibilities.

We have investigated polarized Raman spectra on the {100} facet of B-doped CVD diamond single crystals grown under different diborane additions in the gas phase. An asymmetrical feature was observed on the one-phonon Raman line shape of B-doped diamond crystal which depended on the boron concentration. We have performed Fano line fitting for each one-phonon line of the Raman components. Fano parameters which were calculated from Fano line fitting quantitatively represented the asymmetry of the one-phonon line. The relation between Fano parameters and boron concentrations obtained in this study can predict a certain amount of boron concentration of B-doped diamond. The difference of the Fano asymmetric parameters q between that obtained from 〈100〉 and 〈110〉 decreased with increasing boron concentration. This tendency was similar to that observed in the relation between the crystallinity and boron concentration. We suggest that the asymmetry of the one-phonon line is dominantly induced by crystalline disorder with boron incorporation. Copyright © 1999 John Wiley & Sons, Ltd.

Surface-enhanced Raman scattering spectroscopy has been applied so that hydrogen chemisorption on the diamond (111) and (100) surfaces could be observed. Raman scattering signals from the surface species were enhanced by means of contact with thin Ag films. $\mathrm{C}\ensuremath{-}\mathrm{H}$ stretching vibrations were observed in the region 2800--3000 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ from the hydrogenated diamond surface. C-D stretching vibrations were observed in the region 2050--2250 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ from the deuterated diamond surface. $\mathrm{C}\ensuremath{-}\mathrm{H}$ and C-D stretching vibration modes were assigned according to ab initio molecular orbital calculations.

The model presented considers surface kinetics processes, such as adsorption/desorption of hydrocarbon radicals, thermal dehydrogenation, evaporation, and carbon insertion into silicon, together with the bulk diffusion equation. The calculations performed show that surface protrusions present preferential locations for diamond nucleation due to a superposition of diffusion fluxes of carbon that is able to decrease the carbonization time on the protrusion tips by an order of magnitude compared with the untreated surfaces. This mechanism allows us to explain a number of observations in which the diamond is found to nucleate on the tips of surface protrusions. It is suggested that the surface carbon increases adsorption energy for hydrocarbon species and their concentration in the adlayer, resulting in high supersaturation which provokes nucleation. The analysis also shows that increased methane concentration in the feed gas and lower substrate temperature provide conditions for surface nucleation without a preliminary carbonization stage. The resulting diagram, outlining the operational parameters for both nucleation modes (via or without carbonization) on a Si (1,0,0) surface, is given.

Results on numerical modeling of the influence of a substrate’s nanoscale curvature on nucleation, growth kinetics, and morphological stability of nuclei during thin film vapor deposition are given. The problem is considered within the framework of the continuum surface diffusion equation taking into account the dependence of the adsorption energy, chemical potential, and the relevant surface mass fluxes on the surface curvature, together with the effect of surface self-shadowing from direct collisions from the gas phase and the contribution of readsorption fluxes. The nuclei growth kinetics are described by an Arrhenius type equation. Linear perturbation analysis of the growth model shows that positive nanoscale curvature (a concave surface) is able (i) to considerably increase the prenucleation concentration and thereby to increase the probability of nucleation and even to enable nucleation on substrates which do not have an affinity for nucleation under the given operating conditions, (ii) to increase ...

We have investigated Raman spectra of {100} and {111} facets of B-doped diamond crystals grown by microwave plasma assisted chemical vapor deposition as a function of boron concentration. We have used individual crystals rather than films to avoid stresses which can cause shifts and broadening of the Raman line. A small amount of diborane improves the crystal quality of deposited diamond with changing the Raman spectral features. The asymmetry and broadening of the one-phonon are due to Fano interference, and broad bands centered ca 500 and 1230 cm−1 appear.

Progress of etching of diamond (100) surface by atomic hydrogen was observed in real time with the help of reflection high energy reflection diffraction. The initial 1×1 pattern that indicates smooth two dimensional extension of the crystal surface transformed into the pattern corresponding to the (110) reciprocal lattice plane that indicates surface roughening. Ex situ atomic force microscope observation of the etched surface revealed a lot of shallow etch pits with a few nm in depth and a few degrees in the slope of the pit. It is supposed that deposition is effective against etching in actual chemical vapor deposition conditions partially because of the difference in their favorable temperatures, in addition to the absolute difference in their rates.

The separation and identification of higher fullerenes extracted from carbon soot were studied using high-performance liquid chromatography coupled with electrospray ionization mass spectrometry (LC-ESI-MS). The mixture of fullerenes extracted from carbon soot was first separated by a preparative-scale column packed with monomeric octadecylsilica (ODS), which mainly controls the elution order of fullerenes by their relative molecular mass. Then five batches of the fraction which should contain higher fullerenes larger than C84 were collected and subsequently concentrated, followed by analytical-scale separation with a polymeric ODS column, which can elute fullerenes according to their shape and structure. Therefore, this stationary phase can separate many isomers of higher fullerenes. By identification using LC-ESI-MS, the existence of several higher fullerenes up to C98 and their isomers were confirmed. Temperature effects in the separation of fullerenes were also examined and the results indicated that separation of C82 and C84 isomers could be achieved at a column temperature lower than 15°C using a polymeric ODS column. © 1998 John Wiley & Sons, Inc. J Micro Sep10: 79–88, 1998

A brief perspective on the present diamond surface studies has been attemped. First, unique properties of diamond surface have been described with a brief summary of those of hydrogenated and oxygenated surfaces. Some topics have been presented with an emphasis on the studies motivated by the new method of diamond synthesis, i.e., chemical vapor deposition (CVD) techniques. Finally, possible directions of future studies have been pointed out.

Relationship between growth condition and quality of homoepitaxially grown B-doped diamond (001) film has been studied using physical measurements of defect density as a function of doping concentration. In particular, electrical properties of the homoepitaxial diamond film were characterized using measurements of conductivity, carrier concentration and mobility. The highest mobility is found to be about 1000 cm2V−1s−1 at 293 K, indicating that the quality of the CVD diamond film is further improved through optimizing the growth condition. The density of the compensation donor was determined from the temperature-dependent hole concentration. The lowest donor density is found to be 8.4 × 1015 cm−3 in the present work. This is an order of magnitude greater than the lowest value measured in natural IIb diamond. Furthermore, it is also found that the donor density increases with increasing doping concentration during the growth. On the other hand, the mobility decreases rapidly with increasing doping concentration. From these results, we speculate that the compensation donor is an origin of an additional scattering center in diamond, and excessive B-doping makes the quality of the CVD diamond worse.

In-flight modification of MoSi2 powders has been carried out by using an Ar–H2 induction plasma. Reactor pressure, powder feed rate, and plate power level were taken as the experimental parameters to alter the thermal history of the injected powder particles. Metastable hexagonal structure of β–MoSi2 is the major phase observed in the Ar–H2 induction plasma-treated molybdenum disilicide powders, while the stable phase of tetragonal structure of α–MoSi2 usually retains no less than 30 wt. %. Depending on the experimental condition and the deviation from stoichiometry in raw materials, low silicides, Mo5Si3 and Mo3Si, and free Si were observed

In order to clarify the effect of bias treatments on the highly oriented growth of diamond, we investigated the relation between the silicon surface morphology changes after applying a bias voltage, and the orientation of the diamond crystallites after growth. We report two major findings. First, a textured structure on the Si surface after the bias pretreatment was found to be a necessary but insufficient indicator for the subsequent growth of highly oriented diamond. Second, although bias pretreatments effectively enhance nucleation, we did not find a clear relationship between the nucleation density and the percentage of oriented crystallites. The highest nucleation densities resulted in randomly oriented films. We conclude that bias pretreatments affect the nucleation enhancement and the diamond orientation through different mechanisms.

In the development of a software system using UML, consistency between state machine diagrams and sequence diagrams is crucial. This study proposes a verification method for the consistency of a sequence diagram and state machine diagrams. The proposed method represents state machine diagrams and a sequence diagram as processes, and can verify the consistency by checking weak simulation of the processes. We confirms the method could detect inconsistency with an example.

This paper presents, for the first time, the 3D Glass Photonics (3DGP) technology being developed by Georgia Tech, based on ultra-thin 3D glass interposer [1]. The 3DGP system integrates both optical and electrical interconnects in the same glass substrate using photo-sensitive polymer core, and polymer cladding within an ultra-thin glass substrate. The 3DGP processes are demonstrated using 180 & 100 um thick glass substrates with 30 um diameter via and 8 um wide waveguide structures. The optical vias are used as mode transformer and high-tolerance coupler between fibers and chips. Finite-difference analysis is performed to determine the alignment tolerances of such vias.

This paper demonstrates ultra-miniaturized RF passive components integrated on thin glass substrate with small Through Package Vias (TPVs) to realize 3D Integrated Passive and Actives Component (IPAC) concept. Miniaturization is achieved through; a) ultra-thin glass, b) low-loss thin dielectrics and c) small TPVs. Inductors, capacitors and low pass filters functioning in the frequency range of 0.8 GHz to 5.4 GHz were modeled and fabricated between thin dielectric layers on 100 μm thin glass, and then assembled on PCB through BGA interconnections. The simulated results corroborated well with measured results, providing guidelines for RF module fabrication.

This paper compares thermal performance of glass and silicon interposers for mobile applications, using computational modeling. It is well known that while silicon is a good thermal conductor, glass is a poor conductor, potentially making it unsuitable for packaging applications. This study proposes to address this short coming of glass by comparing and contrasting with silicon. In this study, for more accurate thermal analysis, effective thermal conductivity of glass interposer substrates is measured by infrared microscopy. Subsequently, equivalent thermal conductivity of TPV (Through Package Via) is calculated through numerical analyses. For comparison of thermal performance of glass and silicon interposers, 2.5D interposer structures with logic and memory chips are considered. The comparison shows that by incorporating thermal vias, junction temperature for the glass interposer decreases by about 60%, while junction temperature for silicon interposer decreases 45%, making both acceptable. However, the glass interposer provides significantly better thermal isolation between logic and memory chips. Glass and silicon interposer structures placed in enclosures, representative of mobile applications, provide comparable performance in the presence of thermal vias.

This paper reports reliability of copper-plated through-package-vias (TPVs) in glass interposer by modeling and experimental validation using accelerated life tests. In this paper, both thermomechanical reliability and electrochemical reliability of fine-pitch TPVs in glass interposer were investigated. Thermomechanical reliability was investigated by developing finite element models to calculate the thermomechanical stresses and strains inside TPVs during thermal cycling tests with several glass and polymer liner combinations. Fatigue lifetime of TPVs in glass is predicted based on these simulation results and then validated using experiments. Test samples with daisy chains of TPVs are fabricated with different glass and polymer material combinations and subjected to accelerated temperature cycling tests to assess the thermomechanical reliability of TPVs in glass interposer. Resistance of each daisy chain is monitored using 4-point probe during cycling. It is observed that majority of test samples passed 1000 thermal cycles without any significant changes in electrical resistance. Cross-sectioning of TPV daisy chains that showed significant changes in resistance, revealed that failures were related to defects induced during copper plating in TPV side walls. Electrochemical migration reliability of TPVs in glass was investigated to study conductive anodic filament (CAF) resistance of glass at very small via spacing. Test samples with different material combinations were subjected to biased and highly accelerated stress temperature-humidity test (HAST) to assess electrochemical migration reliability of TPVs. After biased-HAST for 100 hours at 130°C, 85% relative humidity (RH) and 5 V DC, no CAF failures were detected in either of the two material combinations, indicating good insulation reliability under high temperature and humidity conditions.

Chemical modification of diamond powder surfaces was performed using chlorine chemisorption as an intermediate. We found OH, NH, and CF groups on the diamond surface. Chemisorbed species on the diamond powder surface were characterized by diffuse reflectance IR Fourier-transform spectroscopy, X-ray photoelectron spectroscopy, and temperature-programmed desorption spectroscopy. Hydrogen chemisorbed on the diamond surface is abstracted by chlorine above 250 °C, followed by the chemisorption of chlorine. Chlorine desorbs thermally from the diamond surface at approximately 300 °C. Hydroxyl groups are produced by treatment of the chlorinated diamond with water vapor at room temperature. Amino groups are produced by treatment of chlorinated diamond with ammonia at 425 °C. CF groups are produced by treatment of chlorinated diamond with CHF3 at 600 °C. Chlorine can easily chemisorb onto the diamond surface and easily desorb from the diamond surface. Using the chlorinated surface as an intermediate state, it is possible further to modify chemically the diamond surface.

Direct fluorinations of (i) hydrogenated diamond surfaces and (ii) oxidized diamond surfaces have been performed by thermal reaction in elemental fluorine. Chemisorption of fluorine on diamond powder surfaces has been investigated by diffuse-reflectance infrared Fourier transform spectroscopy. The hydrogenated diamond surface is fluorinated by thermal reaction in fluorine molecules. Hydrogen chemisorbed on the diamond surface is abstracted by the reaction with fluorine molecules even at −10 °C. Peaks due to CF stretching vibrations are observed at 1096, 1251 and 1347 cm−1 after the fluorination of the hydrogenated diamond at 100 °C. These CF stretching peaks increase in intensity with increase in fluorination temperature. CO species on the oxidized diamond surface are affected by fluorine molecules above 100 °C. Peaks due to CO stretching vibrations on the oxidized diamond surface remained and shifted into the higher wavenumber region after reaction with fluorine at low temperatures below 400 °C. The fluorination of the oxidized diamond at 500 °C gives similar chemisorbed states of fluorine to those of the hydrogenated diamond. The diamond surface is fully covered with fluorine by the fluorination at 500 °C.

The electrical properties of Schottky barriers formed on homoepitaxially grown diamond (001) films has been studied by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, it is found that the Schottky-barrier height of the as-grown film depends strongly on the work function or the electronegativity of the metal while that of the oxidized film is almost independent of the metal. This result implies that the mechanisms of the barrier formation on the as-grown surface are drastically changed by oxidation. A difference between the electrical properties of the as-grown film and those of the oxidized film is also observed from C-V measurements. The high density of space charge due to ionized gap states is found in the vicinity of the as-grown diamond film and disappears after oxidation. These results suggest the presence of new acceptor centers, which are not related to boron, in the hydrogenated diamond.

We have investigated impurities at the interface between homoepitaxial diamond thin layers and diamond substrates as well as the diffusion of the impurities, using secondary ion mass spectrometry (SIMS). A significant amount of oxygen has been observed at the interface. The amount of oxygen remaining at the interface between the grown layer and substrate diamond decreases with increasing deposition temperature. No oxygen is detected at the interface of samples grown above the deposition temperature of 850 °C. No significant change in the impurities was observed after annealing treatment under high pressure and high temperature conditions (7.7 GPa, 2350 °C), at which diamond is thermodynamically stable.

Background: Walking in water is an effective rehabilitation exercise for patients with various diseases. However, how the mechanical properties of water alter the temporal parameters of human walking is still

The devastating electoral defeat of the ruling Liberal Democratic Party (LDP) in fall 2009 resulted in a period of turmoil in the US-Japan relations. A de javu of the 1993 defeat of the LDP to long-term observers of Japanese foreign policy, the current state of US-Japan relations suffers from both amateurism of the inexperienced politicians and lack of cohesion in the new ruling party.

Vibrational sum-frequency generation (VSFG) spectroscopy was applied to a study of the CH bonds on a homoepitaxially-grown diamond C(100) surface. The VSFG spectrum taken under the (p,p) polarization combination of visible and infrared excitation beams gave vibrational resonance peaks at 2910 and 2960 cm−1 along with a significant background (BG) signal, and the spectrum taken under the (s,p) combination had a peak at 2910 cm−1 and a negligibly weak BG signal. From analyses of the spectral features and polarization characteristics, the 2910 cm−1 band was assigned to the CH stretching vibration of the monohydride (CH) groups on a reconstructed C(100) 2 × 1 surface, and the 2960 cm−1 band to the anti-symmetric CH stretching vibration of the dihydride (CH2) groups located at either the unreconstructed C(100) 1 × 1 island surface or step sites. The tilt angle of the CH group was estimated to be in the range of 30–60°, the large uncertainty originating from the lack of data on the Raman depolarization ratio. The tilt angle of the CH2 group was estimated to be less than 40°.

Background: The side population (SP) of cancer cells is reportedly enriched with cancer stem cells (CSCs), however, the functional role and clinical relevance of CSC marker molecules upregulated in the SP of head and neck squamous carcinoma (HNSCC) cells are yet to be elucidated. Patients with clinical stage I/II (T1-2N0M0) tongue squamous cell carcinoma (TSCC) typically undergo partial glossectomy alone; however, development of delayed neck metastasis (DNM) tends to reduce their survival. In the present study, we aimed to determine the CSC markers in the SP of HNSCC cells along with their functions in cellular behaviors, and to clarify the association of these markers with DNM. Methods: Flow cytometry was applied to isolate SP from main population (MP) in HNSCC cells (SCC4, SAS, and HSC4). The expression of the CSC markers was examined by semi-quantitative RT-PCR and immunocytochemistry. In vitro proliferation, migration, and invasion assays were performed to assess cellular behaviors. Clinicopathological factors and immunohistochemical expressions of Oct3/4 and Nanog were evaluated using surgical specimens from 50 patients with stage I/II TSCC who underwent partial glossectomy alone. Results: SPs were isolated in all three cell lines examined. Expression levels of Oct3/4 and Nanog were higher in SP cells than MP cells. Additionally, cell migration and invasion abilities were higher in SP cells than MP cells, whereas there was no difference in proliferation. Univariate analysis showed that expression of Oct3/4 and Nanog, vascular invasion, muscular invasion, and mode of invasion were significantly correlated with DNM. Multivariate logistic regression revealed that Oct3/4 expression (risk ratio = 14.78, p = 0.002) and vascular invasion (risk ratio = 12.93, p = 0.017) were independently predictive of DNM. Regarding the diagnostic performance, Oct3/4 showed the highest accuracy, sensitivity, and negative predictive value of 82.0%, 61.5%, and 86.8%, respectively, while vascular invasion showed the highest specificity and positive predictive value of 94.6% and 71.4%, respectively. Conclusion: These results suggest that Oct3/4 and Nanog represent probable CSC markers in HNSCC, which contribute to the development of DNM in part by enhancing cell motility and invasiveness. Moreover, along with vascular invasion, expression of Oct3/4 in the primary cancer cells can be considered a potential predictor for selecting patients at high risk of developing DNM. Citation Format: Noboru Habu, Yorihisa Imanishi, Kaori Kameyama, Masayuki Shimoda, Yutaka Tokumaru, Koji Sakamoto, Ryoichi Fujii, Seiji Shigetomi, Kuninori Otsuka, Yoichiro Sato, Yoshihiro Watanabe, Hiroyuki Ozawa, Toshiki Tomita, Masato Fujii, Kaoru Ogawa. Expression of stem cell markers Oct3/4 and Nanog in the head and neck squamous carcinoma cells and its clinical implications for delayed neck metastasis in stage I/II tongue squamous cell carcinoma. [abstract]. In: Proceedings of the 107th Annual Meeting of the American Association for Cancer Research; 2016 Apr 16-20; New Orleans, LA. Philadelphia (PA): AACR; Cancer Res 2016;76(14 Suppl):Abstract nr 3359.

The H-D isotope exchange reaction of chemisorbed species on diamond surfaces has been investigated by diffuse reflectance Fourier-transform IR spectroscopy and temperature-programmed reaction mass spectrometry using powdered diamond. C-H stretching vibrations are observed in the region 2700–3000 cm−1 and C-D stretching vibrations are observed in the region 2000–2250 cm−1. The CH-CD exchange reaction of the pre-hydrogenated diamond with molecular deuterium (CD-CH exchange reaction of the pre-deuterated diamond with molecular hydrogen) was performed. Both reactions occur on the diamond surface above 450 °C. HD formation is observed in the vapor phase during the exchange reaction.

Using high-resolution electron energy loss spectroscopy (HREELS), the surface vibrations of adsorbed hydrogen were investigated on homoepitaxially grown boron-doped single-crystal (001) and (111) films. As-grown surfaces are terminated by hydrogen and the surface carbon atoms are in the sp3 hybridized state. Hydrogen desorption by heating affects the long-range and/or shortrange ordering of the surface. On hydrogen readsorption the long-range ordering on the (001) surface is not recovered, and even the short-range structure remains disturbed in the (111) case. In contrast, heating the sample in D2 (H2) gas results in H-D exchange of the adsorbate without largely disturbing the surface structure. Off-specular HREELS shows two C-H stretching modes and two C-H bending modes on the as-grown (111) surface, which is consistent with CH3 termination. The dispersionless C-H modes indicate weak direct interaction between each adsorbed species. An acoustic surface phonon is observed and shows a small isotope shift, which can be explained by either a CH3 termination or H (monohydride) termination model.

The interaction of chlorine with the hydrogenated diamond surface has been investigated by diffuse reflectance Fourier-transform Infrared (FTIR) spectroscopy, temperature-programmed desorption (TPD) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The hydrogenated diamond surface is chlorinated by thermal reaction in chlorine. Hydrogen chemisorbed on the diamond surface is abstracted by chlorine and the chemisorption of chlorine is yielded. Hydroxyl groups are produced by treatment of the chlorinated diamond with water vapor at room temperature. Amino groups are produced by treatment of the chlorinated diamond with ammonia at 425 °C.

Boron-doped semiconducting diamond thin films were epitaxially grown on a natural diamond (111) single crystal by microwave-plasma-assisted chemical vapor deposition. We investigated chemisorption of hydrogen on the diamond surface by X-ray photoemission spectroscopy measurements and first-principles molecular orbital calculations. By comparison between the experimental and calculated spectra, we conclude that hydrogen termination of the epitaxially grown diamond (111) surface is in the form of the CH 3 group.

化学気相法によるダイヤモンドのエピタキシー研究の現状を概観する。立方晶窒化ほう素では典型的なエピタキシャル成長が可能である。また従来は部分的なエピタキシーの傾向のみが観察されていたシリコン,炭化けい素,ニッケルについても,新しい成果が生まれつつある。

Analysis of kinetics processes involved in carbon nanotube (NT) forest growth during chemical vapor deposition suggests that: (i) carbon species are unable to penetrate to the forest bottom whenever the mean free path in gas is much larger than the typical distance between NTs; instead they collide with NT surfaces, chemisorbing within the top few microns, diffuse along the surface, and feed the growth at nanotube tips, (ii) wherever a catalyst nanoparticle is present, at the substrate or on the nanotube tip, in the postnucleation stage its role in feeding NT growth by C dissolution and bulk diffusion is negligibly small in comparison with the surface diffusion of C species adsorbing on the lateral surface of nanotubes, and (iii) bulk diffusion of C through the catalyst nanoparticle, defining the characteristic times of C penetration to nanoparticle base and surface saturation with C, is shown to play a major role in selection of the initial mode of nanotube nucleation and growth.

This paper demonstrates thin glass interposers with fine pitch through package vias (TPV) as a low cost and high I/O substrate for 3D integration. Interposers for packaging of ULK and 3D-ICs need to support large numbers of die to die interconnections with I/O pitch below 50 μm. Current organic substrates are limited by CTE mismatch, wiring density, and poor dimensional stability. Wafer based silicon interposers can achieve high I/Os at fine pitch, but are limited by high cost. Glass is an ideal interposer material due to its insulating property, large panel availability and CTE match to silicon. The main focus of this work is on a) electrical and mechanical design, b) TPV and fine line formation and c) integration process and electrical characterization of thin glass interposers. This work for the first time demonstrates high throughput formation of 30 μm pitch TPVs in ultrathin glass using a parallel laser process. An integration process was demonstrated for glass interposer with polymer build-up layers on both sides. The glass interposer had stable electrical properties up to 20GHz and low insertion loss of less than 0.15dB was measured for TPVs at 9GHz.

1 Introduction, Marie Soderberg 2 Why the History issue between Japan and South Korea is likely to Persist, Kan Kimura 3 Increasing Cooperation in the Midst of Recurring Frictions, Cheol Hee Park 4 Resurgence of the Hard Liners: Japan and the two Koreas, T.J. Pempel 5 Historical Memory Versus Democratic Reassurance, Paul Midford 6 Substituting Multilateralism, Guiding Trilateralism, Yoichiro Sato 7 Ambivalence and Resistance, Mikyoung Kim 8 Toward a Post-Cold War and Post-industrial Harmony between Japan and Korea, Ingyu Oh 9 The struggle for a decent life in Japan, Marie Soderberg 10 Conclusion, Marie Soderberg

Both President Barack Obama and Secretary of State Hilary Clinton hailed Japan as “the cornerstone of United States global security.”1 Both Prime Minister Taro Aso and Foreign Minister Hirofumi Nakasone reaffirmed the alliance with the United States as key to peace and prosperity in Japan and the region.2 Even just judging from their words, it is crystal clear that the United States is intensely global, whereas Japan is intensely inward looking and essentially preoccupied with Japan and its vicinity. Besides the paraphernalia of the leaders about the alliance, subtle differences and divergences in their priorities seem to manifest themselves between the two governments. They should not be exaggerated. Rather, they should be overcome. Nevertheless these divergent priorities could grow as remedies are ignored.

The year 2010 marks the fiftieth anniversary of the Revised U.S.-Japan Mutual Security Treaty of 1960. The Liberal Democratic Party (LDP), which led Japan’s recovery from the Second World War and growth into one of the richest nations in the world, did not get to host the anniversary event, as it lost control of the parliament in summer 2009. The victorious Democratic Party of Japan (DPJ) is in no mood to celebrate the occasion either. The DPJ-led coalition government pledged to revise the plan to relocate the U.S. Marine Corps Airfield at Futenma, Okinawa, which was agreed between the LDP government and the United States, at the cost of considerable discord between the two governments. After nearly six months of search for a suitable alternative site, the DPJ government has returned to a plan, which seems to stay within minor modifications of the original relocation plan. The politically weakened Prime Minister Hatoyama announced his resignation in early June 2010. Whether DPJ under a new leadership can push through with the plan now is questionable at best. Much political damage has been done to the overall relations between the Obama administration and the Hatoyama government for sure, yet how much harm this issue might cause to the long-term strategic-level relations between the two countries is yet to be seen. Further, two more important issues remain to be seen. The first is whether the DPJ will achieve an upper-house majority of its own and be able to form a government without coalition with the Social Democratic Party of Japan (SDPJ) members, who seem to have held veto power on most security cooperation issues with the United States.