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Bernal (AB)-stacked bilayer graphene (BLG) is a semiconductor whose bandgap can be tuned by a transverse electric field, making it a unique material for a number of electronic and photonic devices. A scalable approach to synthesize high-quality BLG is therefore critical, which requires minimal crystalline defects in both graphene layers and maximal area of Bernal stacking, which is necessary for bandgap tunability. Here we demonstrate that in an oxygen-activated chemical vapour deposition (CVD) process, half-millimetre size, Bernal-stacked BLG single crystals can be synthesized on Cu. Besides the traditional 'surface-limited' growth mechanism for SLG (1st layer), we discovered new microscopic steps governing the growth of the 2nd graphene layer below the 1st layer as the diffusion of carbon atoms through the Cu bulk after complete dehydrogenation of hydrocarbon molecules on the Cu surface, which does not occur in the absence of oxygen. Moreover, we found that the efficient diffusion of the carbon atoms present at the interface between Cu and the 1st graphene layer further facilitates growth of large domains of the 2nd layer. The CVD BLG has superior electrical quality, with a device on/off ratio greater than 10(4), and a tunable bandgap up to ∼100 meV at a displacement field of 0.9 V nm(-1).

Two-dimensional boron is expected to exhibit various structural polymorphs, all being metallic. Additionally, its small atomic mass suggests strong electron-phonon coupling, which in turn can enable superconducting behavior. Here we perform first-principles analysis of electronic structure, phonon spectra, and electron-phonon coupling of selected 2D boron polymorphs and show that the most stable structures predicted to feasibly form on a metal substrate should also exhibit intrinsic phonon-mediated superconductivity, with estimated critical temperature in the range of Tc ≈ 10-20 K.

Nanostructured materials, such as zeolites and metal-organic frameworks, have been considered to capture CO2. However, their application has been limited largely because they exhibit poor selectivity for flue gases and low capture capacity under low pressures. We perform a high-throughput screening for selective CO2 capture from flue gases by using first principles thermodynamics. We find that elements with empty d orbitals selectively attract CO2 from gaseous mixtures under low CO2 pressures (~10(-3) bar) at 300 K and release it at ~450 K. CO2 binding to elements involves hybridization of the metal d orbitals with the CO2 π orbitals and CO2-transition metal complexes were observed in experiments. This result allows us to perform high-throughput screening to discover novel promising CO2 capture materials with empty d orbitals (e.g., Sc- or V-porphyrin-like graphene) and predict their capture performance under various conditions. Moreover, these findings provide physical insights into selective CO2 capture and open a new path to explore CO2 capture materials.

A MoS2(1-x) P(x) solid solution (x = 0 to 1) is formed by thermally annealing mixtures of MoS2 and red phosphorus. The effective and stable electrocatalyst for hydrogen evolution in acidic solution holds promise for replacing scarce and expensive platinum that is used in present catalyst systems. The high performance originates from the increased surface area and roughness of the solid solution., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Two-dimensional (2D) semiconductors can be very useful for novel electronic and optoelectronic applications because of their good material properties. However, all current 2D materials have shortcomings that limit their performance. As a result, new 2D materials are highly desirable. Using atomic transmutation and differential evolution global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has shown good electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer control and applied strain, and good air stability as well. Therefore, Pma2-SiS is expected to be a promising 2D material in the field of 2D electronics and optoelectronics. The designing principles demonstrated in identifying these two tantalizing examples have great potential to accelerate the finding of new functional 2D materials.

Hexagonal boron nitride (h-BN) sheet is a structural analogue of graphene, yet its growth mechanism has been rarely studied, as complicated by its binary composition. Here, we reveal an atomistic growth mechanism for the h-BN islands by combining crystal growth theory with comprehensive first-principles calculations. The island shapes preferred by edge equilibrium are found to be inconsistent with experimental facts, which is in contrast to previous common views. Then the growth kinetics is explored by analyzing the diffusion and docking of boron and nitrogen atoms at the edges in a step-by-step manner of the nanoreactor approach. The determined sequence of atom-by-atom accretion reveals a strong kinetic anisotropy of growth. Depending on the chemical potential of constituent elements, it yields the h-BN shapes as equilateral triangles or hexagons, explaining a number of experimental observations and opening a way for the synthesis of quality h-BN with controlled morphology. The richer growth kinetics of h-BN compared to graphene is further extendable to other binary two-dimensional materials, notably metal dichalcogenides.

Here we report a unique method to locally determine the mechanical response of individual covalent junctions between carbon nanotubes (CNTs), in various configurations such as "X", "Y", and "Λ"-like. The setup is based on in situ indentation using a picoindenter integrated within a scanning electron microscope. This allows for precise mapping between junction geometry and mechanical behavior and uncovers geometry-regulated junction stiffening. Molecular dynamics simulations reveal that the dominant contribution to the nanoindentation response is due to the CNT walls stretching at the junction. Targeted synthesis of desired junction geometries can therefore provide a "structural alphabet" for construction of macroscopic CNT networks with tunable mechanical response.

Traditional inductors in modern electronics consume excessive areas in the integrated circuits. Carbon nanostructures can offer efficient alternatives if the recognized high electrical conductivity of graphene can be properly organized in space to yield a current-generated magnetic field that is both strong and confined. Here we report on an extraordinary inductor nanostructure naturally occurring as a screw dislocation in graphitic carbons. Its elegant helicoid topology, resembling a Riemann surface, ensures full covalent connectivity of all graphene layers, joined in a single layer wound around the dislocation line. If voltage is applied, electrical currents flow helically and thus give rise to a very large (∼1 T at normal operational voltage) magnetic field and bring about superior (per mass or volume) inductance, both owing to unique winding density. Such a solenoid of small diameter behaves as a quantum conductor whose current distribution between the core and exterior varies with applied voltage, resulting in nonlinear inductance.

The practical recycling of carbon dioxide (CO2) by the electrochemical reduction route requires an active, stable, and affordable catalyst system. Although noble metals such as gold and silver have been demonstrated to reduce CO2 into carbon monoxide (CO) efficiently, they suffer from poor durability and scarcity. Here we report three-dimensional (3D) graphene foam incorporated with nitrogen defects as a metal-free catalyst for CO2 reduction. The nitrogen-doped 3D graphene foam requires negligible onset overpotential (-0.19 V) for CO formation, and it exhibits superior activity over Au and Ag, achieving similar maximum Faradaic efficiency for CO production (∼85%) at a lower overpotential (-0.47 V) and better stability for at least 5 h. The dependence of catalytic activity on N-defect structures is unraveled by systematic experimental investigations. Indeed, the density functional theory calculations confirm pyridinic N as the most active site for CO2 reduction, consistent with experimental results.

Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices.

High-quality organic and inorganic van der Waals (vdW) solids are realized using methylammonium lead halide (CH3 NH3 PbI3 ) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids exhibit dramatically different light emissions. Futhermore, organic/h-BN vdW solid arrays are patterned for red-light emission., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

The properties and growth processes of graphene are greatly influenced by the elemental distributions of impurity atoms and their functional groups within or on the hexagonal carbon lattice. Oxygen and hydrogen atoms and their functional molecules (OH, CO, and CO2 ) positions' and chemical identities are tomographically mapped in three dimensions in a graphene monolayer film grown on a copper substrate, at the atomic part-per-million (atomic ppm) detection level, employing laser assisted atom-probe tomography. The atomistic plan and cross-sectional views of graphene indicate that oxygen, hydrogen, and their co-functionalities, OH, CO, and CO2 , which are locally clustered under or within the graphene lattice. The experimental 3D atomistic portrait of the chemistry is combined with computational density-functional theory (DFT) calculations to enhance the understanding of the surface state of graphene, the positions of the chemical functional groups, their interactions with the underlying Cu substrate, and their influences on the growth of graphene., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Nitrogen-doped carbon nanotubes (NCNTs) have been considered as a promising electrocatalyst for carbon-dioxide-reduction reactions, but two fundamental chemistry questions remain obscure: 1) What are the active centers with respect to various defect species and 2) what is the role of defect density on the selectivity of NCNTs? The aim of this work is to address these questions. The catalytic activity of NCNTs depends on the structural nature of nitrogen in CNTs and defect density. Comparing with pristine CNTs, the presence of graphitic and pyridinic nitrogen significantly decreases the overpotential (ca. -0.18 V) and increases the selectivity (ca. 80%) towards the formation of CO. The experimental results are in congruent with DFT calculations, which show that pyridinic defects retain a lone pair of electrons that are capable of binding CO2. However, for graphitic-like nitrogen, electrons are located in the π* antibonding orbital, making them less accessible for CO2 binding., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Intrinsic semimetallicity of graphene and silicene largely limits their applications in functional devices. Mixing carbon and silicon atoms to form two-dimensional (2D) silicon carbide (SixC1-x) sheets is promising to overcome this issue. Using first-principles calculations combined with the cluster expansion method, we perform a comprehensive study on the thermodynamic stability and electronic properties of 2D SixC1-x monolayers with 0 ≤ x ≤ 1. Upon varying the silicon concentration, the 2D SixC1-x presents two distinct structural phases, a homogeneous phase with well dispersed Si (or C) atoms and an in-plane hybrid phase rich in SiC domains. While the in-plane hybrid structure shows uniform semiconducting properties with widely tunable band gap from 0 to 2.87 eV due to quantum confinement effect imposed by the SiC domains, the homogeneous structures can be semiconducting or remain semimetallic depending on a superlattice vector which dictates whether the sublattice symmetry is topologically broken. Moreover, we reveal a universal rule for describing the electronic properties of the homogeneous SixC1-x structures. These findings suggest that the 2D SixC1-x monolayers may present a new "family" of 2D materials, with a rich variety of properties for applications in electronics and optoelectronics.

Two-dimensional (2D) materials, such as graphene and boron nitride, have specific lattice structures independent of external conditions. In contrast, the structure of 2D boron sensitively depends on metal substrate, as we show herein using the cluster expansion method and a newly developed surface structure-search method, both based on first-principles calculations. The preferred 2D boron on weaker interacting Au is nonplanar with significant buckling and numerous polymorphs as in vacuum, whereas on more reactive Ag, Cu, and Ni, the polymorphic energy degeneracy is lifted and a particular planar structure is found to be most stable. We also show that a layer composed of icosahedral B12 is unfavorable on Cu and Ni but unexpectedly becomes a possible minimum on Au and Ag. The substrate-dependent 2D boron choices originate from a competition between the strain energy of buckling and chemical energy of electronic hybridization between boron and metal., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted significant attention recently due to its direct bandgap semiconducting characteristics. Experimental studies on monolayer MoS2 show that S vacancy concentration varies greatly; while recent theoretical studies show that the formation energy of S vacancy is high and thus its concentration should be low. We perform density functional theory calculations to study the structures and energetics of vacancy and interstitial in both grain boundary (GB) and grain interior (GI) in monolayer MoS2 and uncover an anomalous formation pathway for dislocation-double S vacancy (V2S) complexes in MoS2. In this pathway, a (5|7) defect in an S-polar GB energetically favorably converts to a (4|6) defect, which possesses a duality: dislocation and double S vacancy. Its dislocation character allows it to glide into GI through thermal activation at high temperatures, bringing the double vacancy with it. Our findings here not only explain why VS is predominant in exfoliated 2D MoS2 and V2S is predominant in chemical vapor deposition (CVD)-grown 2D MoS2 but also reproduce GB patterns in CVD-grown MoS2. The new pathway for sulfur vacancy formation revealed here provides important insights and guidelines for controlling the quality of monolayer MoS2.

Grain boundaries (GBs) of hexagonal boron nitride (h-BN) grown on Cu(111) were investigated by scanning tunneling microscopy/spectroscopy (STM/STS). The first experimental evidence of the GBs composed of square-octagon pairs (4|8 GBs) was given, together with those containing pentagon-heptagon pairs (5|7 GBs). Two types of GBs were found to exhibit significantly different electronic properties, where the band gap of the 5|7 GB was dramatically decreased as compared with that of the 4|8 GB, consistent with our obtained result from density functional theory (DFT) calculations. Moreover, the present work may provide a possibility of tuning the inert electronic property of h-BN via grain boundary engineering.

The search for new candidate semiconductors with direct band gaps of ∼1.4 eV has attracted significant attention, especially among the two-dimensional (2D) materials, which have become potential candidates for next-generation optoelectronics. Herein, we systematically studied 2D B(x)/2N(x/2)C(1-x) (0 < x < 1) compounds in particular focus on the four stoichiometric B(x)/2N(x/2)C(1-x) (x = 2/3, 1/2, 2/5 and 1/3) using a recently developed global optimization method (CALYPSO) in conjunction with density functional theory. Furthermore, we examine more stoichiometries by the cluster expansion technique based on a hexagonal lattice. The results reveal that all monolayer B(x)/2N(x/2)C(1-x) stoichiometries adopt a planar honeycomb character and are dynamically stable. Remarkably, electronic structural calculations show that most of B(x)/2N(x/2)C(1-x) phases possess direct band gaps within the optical range, thereby they can potentially be used in high-efficiency conversion of solar energy to electric power, as well as in p-n junction photovoltaic modules. The present results also show that the band gaps of B(x)/2N(x/2)C(1-x) can be widely tuned within the optical range by changing the concentration of carbon, thus allowing the fast development of band gap engineered materials in optoelectronics. These new findings may enable new approaches to the design of microelectronic devices.

We report theoretical analysis of the electronic flexoelectric effect associated with nanostructures of sp(2) carbon (curved graphene). Through the density functional theory calculations, we establish the universality of the linear dependence of flexoelectric atomic dipole moments on local curvature in various carbon networks (carbon nanotubes, fullerenes with high and low symmetry, and nanocones). The usefulness of such dependence is in the possibility to extend the analysis of any carbon systems with local deformations with respect to their electronic properties. This result is exemplified by exploring of flexoelectric effect in carbon nanocones that display large dipole moment, cumulative over their surface yet surprisingly scaling exactly linearly with the length, and with sine-law dependence on the apex angle, dflex ~ L sin(α). Our study points out the opportunity of predicting the electric dipole moment distribution on complex graphene-based nanostructures based only on the local curvature information.

The applied uniaxial stress can break the original symmetry of a material, providing an experimentally feasible way to alter material properties. Here, we explore the effects of uniaxial stress along an arbitrary direction on mechanical and electronic properties of phosphorene, showing the enhancement of inherent anisotropy. Basic physical quantities including Young's modulus, Poisson's ratio, band gap, and effective carrier masses under external stress are all computed from first principles using density functional theory, while the final results are presented in compact analytical forms.

The challenge in the electrosynthesis of fuels from CO2 is to achieve durable and active performance with cost-effective catalysts. Here, we report that carbon nanotubes (CNTs), doped with nitrogen to form resident electron-rich defects, can act as highly efficient and, more importantly, stable catalysts for the conversion of CO2 to CO. The unprecedented overpotential (-0.18 V) and selectivity (80%) observed on nitrogen-doped CNTs (NCNTs) are attributed to their unique features to facilitate the reaction, including (i) high electrical conductivity, (ii) preferable catalytic sites (pyridinic N defects), and (iii) low free energy for CO2 activation and high barrier for hydrogen evolution. Indeed, DFT calculations show a low free energy barrier for the potential-limiting step to form key intermediate COOH as well as strong binding energy of adsorbed COOH and weak binding energy for the adsorbed CO. The highest selective site toward CO production is pyridinic N, and the NCNT-based electrodes exhibit no degradation over 10 h of continuous operation, suggesting the structural stability of the electrode.

The two-dimensional (2D) transition metal dichalcogenides (TMDC, of generic formula MX2) monolayer displays the "triple-decker" structure with the chemical bond organization much more complex than in well-studied monatomic layers of graphene or boron nitride. Accordingly, the makeup of the dislocations in TMDC permits chemical variability, depending sensitively on the equilibrium with the environment. In particular, first-principles calculations show that dislocations state can be switched to highly mobile, profoundly changing the lattice relaxation and leading to superplastic behavior. With 2D MoS2 as an example, we construct full map for dislocation dynamics, at different chemical potentials, for both the M- and X-oriented dislocations. Depending on the structure of the migrating dislocation, two different dynamic mechanisms are revealed: either the direct rebonding (RB) mechanism where only a single metal atom shifts slightly, or generalized Stone-Wales (SW(g)) rotation in which several atoms undergo significant displacements. The migration barriers for RB mechanism can be 2-4 times lower than for the SW(g). Our analyses show that within a range of chemical potentials, highly mobile dislocations could at the same time be thermodynamically favored, that is statistically dominating the overall material property. This demonstrates remarkable possibility of changing material basic property such as plasticity by changing elemental chemical potentials of the environment.

In graphene growth, island symmetry can become lower than the intrinsic symmetries of both graphene and the substrate. First-principles calculations and Monte Carlo modeling explain the shapes observed in our experiments and earlier studies for various metal surface symmetries. For equilibrium shape, edge energy variations δE manifest in distorted hexagons with different ground-state edge structures. In growth or nucleation, energy variation enters exponentially as ∼e(δE/k(B)T), strongly amplifying the symmetry breaking, up to completely changing the shapes to triangular, ribbonlike, or rhombic.

Creation of free edges in graphene during mechanical fracture is a process that is important from both fundamental and technological points of view. Here we derive an analytical expression for the energy of a free-standing reconstructed chiral graphene edge, with chiral angle varying from 0° to 30°, and test it by first-principles computations. We then study the thermodynamics and kinetics of fracture and show that during graphene fracture under uniaxial load it is possible to obtain fully reconstructed zigzag edges through sequential reconstructions at the crack tip. The preferable condition for this process is high temperature (T ∼ 1000 K) and low (quasi-static) mechanical load (KI ∼ 5.0 eV Å(-5/2)). Edge configurations of graphene nanoribbons may be tuned according to these guidelines.

Defects in solids commonly limit mechanical performance of materials by reducing their rigidity and strength. However, topological defects also induce a prominent geometrical effect in addition to local stress buildup, which is especially pronounced in two-dimensional crystals. These dual roles of defects modulate mechanical responses of the material under local and global probes in very different ways. We demonstrate through atomistic simulations and theoretical analysis that local response of two-dimensional crystals can even be stiffened and strengthened by topological defects as the structure under indentation features a positive Gaussian curvature, while softened and weakened mechanical responses are measured at locations with negative Gaussian curvatures. These findings shed lights on mechanical characterization of two-dimensional materials in general. The geometrical effect of topological defects also adds a new dimension to material design, in the scenario of geometrical and topological engineering.

Transition metal dichalcogenides monolayers and black phosphorus thin crystals are emerging two-dimensional materials that demonstrated extraordinary optoelectronic properties. Exotic properties and physics may arise when atomic layers of different materials are stacked together to form van der Waals solids. Understanding the important interlayer couplings in such heterostructures could provide avenues for control and creation of characteristics in these artificial stacks. Here we systematically investigate the optical and optoelectronic properties of artificial stacks of molybdenum disulfide, tungsten disulfide, and black phosphorus atomic layers. An anomalous photoluminescence quenching was observed in tungsten disulfide-molybdenum disulfide stacks. This was attributed to a direct to indirect band gap transition of tungsten disulfide in such stacks while molybdenum disulfide maintains its monolayer properties by first-principles calculations. On the other hand, due to the strong build-in electric fields in tungsten disulfide-black phosphorus or molybdenum disulfide-black phosphorus stacks, the excitons can be efficiently splitted despite both the component layers having a direct band gap in these stacks. We further examine optoelectronic properties of tungsten disulfide-molybdenum disulfide artificial stacks and demonstrate their great potentials in future optoelectronic applications.

The electronic and magnetic properties of MoS2 nanoribbons doped with 3d transitional metals (TMs) were investigated using first-principles calculations. Clean armchair MoS2 nanoribbons (AMoS2NRs) are nonmagnetic semiconductors whereas clean zigzag MoS2 nanoribbons (ZMoS2NRs) are metallic magnets. The 3d TM impurities tend to substitute the outermost cations of AMoS2NRs and ZMoS2NRs, which are in agreement with the experimental results reported. The magnetization of the 3d-TM-impurity-doped AMoS2NRs and ZMoS2NRs is configuration dependent. The band gap and carrier concentration of AMoS2NRs can be tuned by 3d-TM doping. Fe-doped AMoS2NRs exhibit ferromagnetic characteristics and the Curie temperature (T(C)) can be tuned using different impurity concentrations. Co-doped ZMoS2NRs are strongly ferromagnetic with a T(C) above room temperature.

CONSPECTUS: While some exceptional properties are unique to graphene only (its signature Dirac-cone gapless dispersion, carrier mobility, record strength), other features are common to other two-dimensional materials. The broader family "beyond graphene" offers greater choices to be explored and tailored for various applications. Transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), and 2D layers of pure elements, like phosphorus or boron, can complement or even surpass graphene in many ways and uses, ranging from electronics and optoelectronics to catalysis and energy storage. Their availability greatly relies on chemical vapor deposition growth of large samples, which are highly polycrystalline and include interfaces such as edges, heterostructures, and grain boundaries, as well as dislocations and point defects. These imperfections do not always degrade the material properties, but they often bring new physics and even useful functionality. It turns particularly interesting in combination with the sheer openness of all 2D sheets, fully exposed to the environment, which, as we show herein, can change and tune the defect structures and consequently all their qualities, from electronic levels, conductivity, magnetism, and optics to structural mobility of dislocations and catalytic activities. In this Account, we review our progress in understanding of various defects. We begin by expressing the energy of an arbitrary graphene edge analytically, so that the environment is regarded by "chemical phase shift". This has profound implications for graphene and carbon nanotube growth. Generalization of this equation to heteroelemental BN gives a method to determine the energy for arbitrary edges of BN, depending on the partial chemical potentials. This facilitates the tuning of the morphology and electronic and magnetic properties of pure BN or hybrid BN|C systems. Applying a similar method to three-atomic-layer TMDCs reveals more diverse edge structures for thermodynamically stable flakes. Moreover, CVD samples show new types of edge reconstruction, providing insight into the nonequilibrium growth process. Combining dislocation theory with first-principles computations, we could predict the dislocation cores for BN and TMDC and reveal their variable chemical makeup. This lays the foundation for the unique sensitivity to ambient conditions. For example, partial occupation of the defect states for dislocations in TMDCs renders them intrinsically magnetic. The exchange coupling between electrons from neighboring dislocations in grain boundaries further makes them half-metallic, which may find its applications in spintronics. Finally, brief discussion of monoelemental 2D-layer phosphorus and especially the structures and growth routes of 2D boron shows how theoretical assessment can help the quest for new synthetic routes.

Doped, substituted, or alloyed graphene is an attractive candidate for use as a tunable element of future nanomechanical and optoelectronic devices. Here we use the density functional theory, density functional tight binding, cluster expansion, and molecular dynamics to investigate the thermal stability and electronic properties of a binary 2D alloy of graphitic carbon and nitrogen (C(1-x)N(x)). The stability range naturally begins from graphene and must end before x = 1, where pure nitrogen rather forms molecular gas. This poses a compelling question of what highest x < 1 still permits stable 2D hexagonal lattice. Such upper limit on the nitrogen concentration that is achievable in a stable alloy can be found based on the phonon and molecular dynamics calculations. The stability switchover is predicted to between x = 1/3 (33.3%) and x = 3/8 (37.5%), and no stable hexagonal lattice two-dimensional CN alloys can exist at the N concentration of x = 3/8 (37.5%) and higher.

The cost effective synthesis and patterning of carbon nanomaterials is a challenge in electronic and energy storage devices. Here we report a one-step, scalable approach for producing and patterning porous graphene films with three-dimensional networks from commercial polymer films using a CO 2 infrared laser. The sp 3 -carbon atoms are photothermally converted to sp 2 -carbon atoms by pulsed laser irradiation. The resulting laser-induced graphene (LIG) exhibits high electrical conductivity. The LIG can be readily patterned to interdigitated electrodes for in-plane microsupercapacitors with specific capacitances of >4 mF cm -2 and power densities of ~9 mW cm -2 . Theoretical calculations partially suggest that enhanced capacitance may result from LIG's unusual ultra-polycrystalline lattice of pentagon-heptagon structures. Combined with the advantage of one-step processing of LIG in air from commercial polymer sheets, which would allow the employment of a roll-to-roll manufacturing process, this technique provides a rapid route to polymer-written electronic and energy storage devices.

The deep gap states created by defects in semiconductors typically deteriorate the performance of (opto)electronic devices. This has limited the applications of two-dimensional (2D) metal dichalcogenides (MX2) and underscored the need for a new 2D semiconductor without defect-induced deep gap states. In this work, we demonstrate that a 2D mono-elemental semiconductor is a promising candidate. This is exemplified by first-principles study of 2D phosphorus (P), a recently fabricated high-mobility semiconductor. Most of the defects, including intrinsic point defects and grain boundaries, are electronically inactive, thanks to the homoelemental bonding, which is not preferred in heteroelemental system such as MX2. Unlike MX2, the edges of which create deep gap states and cannot be eliminated by passivation, the edge states of 2D P can be removed from the band gap by hydrogen termination. We further find that both the type and the concentration of charge carriers in 2D P can be tuned by doping with foreign atoms. Our work sheds light on the role of defects in the electronic structure of materials.

The bulk properties of polycrystalline materials are directly influenced by the atomic structure at the grain boundaries that join neighboring crystallites. In this work, we show that graphene grain boundaries are comprised of structural building blocks of conserved atomic bonding sequences using aberration corrected high-resolution transmission electron microscopy. These sequences appear as stretches of identically arranged periodic or aperiodic regions of dislocations. Atomic scale strain and lattice rotation of these interfaces is derived by mapping the exact positions of every carbon atom at the boundary with ultrahigh precision. Strain fields are organized into local tensile and compressive dipoles in both periodic and aperiodic dislocation regions. Using molecular dynamics tension simulations, we find that experimental grain boundary structures maintain strengths that are comparable to idealized periodic boundaries despite the presence of local aperiodic dislocation sequences.

Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of the MoS2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p-n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties.

Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapour deposition, but has not yet been fully explored. Here we systematically characterize chemical vapour deposition-grown MoS2 by photoluminescence spectroscopy and mapping and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced bandgap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. Furthermore, our work demonstrates that photoluminescence mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

Three key positions of graphene on a catalyst surface can be identified based on precise computations, namely as sunk (S), step-attached (SA), and on-terrace (OT). Surprisingly, the preferred modes are not all alike but vary from metal to metal, depending on the energies of graphene-edge "wetting" by the catalyst: on a catalyst surface of soft metal like Au(111), Cu(111) or Pd(111), the graphene tends to grow in step-attached or embedded mode, while on a rigid catalyst surface such as Pt(111), Ni(111), Rh(111), Ir(111), or Ru(0001), graphene prefers growing as step-attached or on-terrace. Accordingly, as further energy analysis shows, the graphene formed via the S and SA modes should have orientations fixed relative to the metal crystal lattice, thus prescribing epitaxial growth of graphene on Au(111), Cu(111) and Pd(111). This conclusion indeed correlates well with numerous experimental data, also solving some puzzles observed, and suggesting better ways for growing larger-area single-crystalline graphene by making proper catalyst selections.

Carbon nanotubes hold enormous technological promise. It can only be harnessed if one controls their chirality, the feature of the tubular carbon topology that governs all the properties of nanotubes-electronic, optical, mechanical. Experiments in catalytic growth over the last decade have repeatedly revealed a puzzling strong preference towards minimally chiral (near-armchair) tubes, challenging any existing hypotheses and making chirality control ever more tantalizing, yet leaving its understanding elusive. Here we combine the nanotube/catalyst interface thermodynamics with the kinetic growth theory to show that the unusual near-armchair peaks emerge from the two antagonistic trends at the interface: energetic preference towards achiral versus the faster growth kinetics of chiral nanotubes. This narrow distribution is inherently related to the peaked behaviour of a simple function, xe(-x).

Dislocations have a significant effect on mechanical, electronic, magnetic and optical properties of crystals. For a dislocation to migrate in bulk crystals, collective and simultaneous movement of several atoms is needed. In two-dimensional crystals, in contrast, dislocations occur on the surface and can exhibit unique migration dynamics. Dislocation migration has recently been studied in graphene, but no studies have been reported on dislocation dynamics for two-dimensional transition metal dichalcogenides with unique metal-ligand bonding and a three-atom thickness. This study presents dislocation motion, glide and climb, leading to grain boundary migration in a tungsten disulphide monolayer. Direct atomic-scale imaging coupled with atomistic simulations reveals a strikingly low-energy barrier for glide, leading to significant grain boundary reconstruction in tungsten disulphide. The observed dynamics are unique and different from those reported for graphene. Through strain field mapping, we also demonstrate how dislocations introduce considerable strain along the grain boundaries and at the dislocation cores.

Mimicking the conventional barrier-based kinetic Monte Carlo simulation, an energy-driven kinetic Monte Carlo (EDKMC) method was developed to study the structural transformation of carbon nanomaterials. The new method is many orders magnitude faster than standard molecular dynamics or Monte Marlo (MC) simulations and thus allows us to explore rare events within a reasonable computational time. As an example, the temperature dependence of fullerene coalescence was studied. The simulation, for the first time, revealed that short capped single-walled carbon nanotubes (SWNTs) appear as low-energy metastable structures during the structural evolution.

First-principles calculations for carbyne under strain predict that the Peierls transition from symmetric cumulene to broken-symmetry polyyne structure is enhanced as the material is stretched. Interpretation within a simple and instructive analytical model suggests that this behavior is valid for arbitrary 1D metals. Further, numerical calculations of the anharmonic quantum vibrational structure of carbyne show that zero-point atomic vibrations eliminate the Peierls distortion in the mechanically free chain, preserving the cumulene symmetry. The emergence and increase of Peierls dimerization under tension then implies a qualitative transition between the two forms, which our computations place around 3% strain. Thus, the competition between the zero-point vibrations and mechanical strain determines a switch in symmetry resulting in the transition from metallic state to a dielectric, with a small effective mass and a high carrier mobility. In any practical realization, it is important that the effect is also chemically modulated by the choice of terminating groups. These findings are promising for applications such as electromechanical switching and band gap tuning via strain, and besides carbyne itself, they directly extend to numerous other systems that show Peierls distortion.

Many key performance characteristics of carbon-based lithium-ion battery anodes are largely determined by the strength of binding between lithium (Li) and sp(2) carbon (C), which can vary significantly with subtle changes in substrate structure, chemistry, and morphology. Here, we use density functional theory calculations to investigate the interactions of Li with a wide variety of sp(2) C substrates, including pristine, defective, and strained graphene, planar C clusters, nanotubes, C edges, and multilayer stacks. In almost all cases, we find a universal linear relation between the Li-C binding energy and the work required to fill previously unoccupied electronic states within the substrate. This suggests that Li capacity is predominantly determined by two key factors-namely, intrinsic quantum capacitance limitations and the absolute placement of the Fermi level. This simple descriptor allows for straightforward prediction of the Li-C binding energy and related battery characteristics in candidate C materials based solely on the substrate electronic structure. It further suggests specific guidelines for designing more effective C-based anodes. The method should be broadly applicable to charge-transfer adsorption on planar substrates, and provides a phenomenological connection to established principles in supercapacitor and catalyst design.

Binary alloys present a promising venue for band gap engineering and tuning of other mechanical and electronic properties of materials. Here we use the density-functional theory and cluster expansion to investigate the thermodynamic stability and electronic properties of 2D transition metal dichalcogenide (TMD) binary alloys. We find that mixing electron-accepting or electron-donating transition metals with 2D TMD semiconductors leads to degenerate p- or n-doping, respectively, effectively rendering them metallic. We then proceed to investigate the electronic properties of semiconductor-semiconductor alloys. The exploration of the configurational space of the 2D molybdenum-tungsten disulfide (Mo1-xWxS2) alloy beyond the mean field approximation yields insights into anisotropy of the electron and hole effective masses in this material. The effective hole mass in the 2D Mo1-xWxS2 is nearly isotropic and is predicted to change almost linearly with the tungsten concentration x. In contrast, the effective electron mass shows significant spatial anisotropy. The values of the band gap in 2D Mo1-xWxS2 and MoSe2(1-x)S2x are found to be configuration-dependent, exposing the limitations of the mean field approach to band gap analysis in alloys.

Electron irradiation of anthracite functionalized by dodecyl groups leads to recrystallization of the carbon network into diamonds. The diamonds range in size from ∼2 to ∼10 nm and exhibit {111} spacing of 2.1 Å. A bulk process consistent with bias-enhanced nucleation is proposed in which the dodecyl group provides hydrogen during electron irradiation. Recrystallization into diamond occurs in the hydrogenated graphitic subsurface layers. Unfunctionalized anthracite could not be converted into diamond during electron irradiation. The dependence of the phase transition pressure on cluster size was estimated, and it was found that diamond particles with a radius up to 20 nm could be formed.

We study the Li clustering process on graphene and obtain the geometry, nucleation barrier, and electronic structure of the clusters using first-principles calculations. We estimate the concentration-dependent nucleation barrier for Li on graphene. While the nucleation occurs more readily with increasing Li concentration, possibly leading to the dendrite formation and failure of the Li-ion battery, the existence of the barrier delays nucleation and may allow Li storage on graphene. Our electronic structure and charge transfer analyses reveal how the fully ionized Li adatoms transform to metallic Li during the cluster growth on graphene.

The discovery of two-dimensional materials became possible due to the mechanical cleavage technique. Despite its simplicity, the as-cleaved materials demonstrated surprising macro-continuity, high crystalline quality and extraordinary mechanical and electrical properties that triggered global research interest. Here such cleavage processes and associated mechanical behaviours are investigated by a direct in situ transmission electron microscopy probing technique, using atomically thin molybdenum disulphide layers as a model material. Our technique demonstrates layer number selective cleavage, from a monolayer to double layer and up to 23 atomic layers. In situ observations combined with molecular dynamics simulations reveal unique layer-dependent bending behaviours, from spontaneous rippling (<5 atomic layers) to homogeneous curving (~ 10 layers) and finally to kinking (20 or more layers), depending on the competition of strain energy and interfacial energy.

We demonstrate how substrate interfacial chemistry can be utilized to tailor the physical properties of single-crystalline molybdenum disulfide (MoS2) atomic-layers. Semiconducting, two-dimensional MoS2 possesses unique properties that are promising for future optical and electrical applications for which the ability to tune its physical properties is essential. We use self-assembled monolayers with a variety of end termination chemistries to functionalize substrates and systematically study their influence on the physical properties of MoS2. Using electrical transport measurements, temperature-dependent photoluminescence spectroscopy, and empirical and first-principles calculations, we explore the possible mechanisms involved. Our data shows that combined interface-related effects of charge transfer, built-in molecular polarities, varied densities of defects, and remote interfacial phonons strongly modify the electrical and optical properties of MoS2. These findings can be used to effectively enhance or modulate the conductivity, field-effect mobility, and photoluminescence in MoS2 monolayers, illustrating an approach for local and universal property modulations in two-dimensional atomic-layers.

Synthesizing bilayer graphene (BLG), which has a band gap, is an important step in graphene application in microelectronics. Experimentally, it was broadly observed that hydrogen plays a crucial role in graphene chemical vapor deposition (CVD) growth on a copper surface. Here, by using ab initio calculations, we have revealed a crucial role of hydrogen in graphene CVD growth, terminating the graphene edges. Our study demonstrates the following. (i) At a low hydrogen pressure, the graphene edges are not passivated by H and thus tend to tightly attach to the catalyst surface. As a consequence, the diffusion of active C species into the area beneath the graphene top layer (GTL) is prohibited, and therefore, single-layer graphene growth is favored. (ii) At a high hydrogen pressure, the graphene edges tend to be terminated by H, and therefore, its detachment from the catalyst surface favors the diffusion of active C species into the area beneath the GTL to form the adlayer graphene below the GTL; as a result, the growth of BLG or few-layer graphene (FLG) is preferred. This insightful understanding reveals a crucial role of H in graphene CVD growth and paves a way for the controllable synthesis of BLG or FLG. Besides, this study also provides a reasonable explanation for the hydrogen pressure-dependent graphene CVD growth behaviors on a Cu surface.

In the formation of a carbon nanotube (CNT) nucleus, a hemispherical fullerene end-cap, a specific pattern of six pentagons encodes what unique (n,m) chirality a nascent CNT would inherit, with many possible pentagon patterns corresponding to a single chirality. This configurational variety and its potential role in the initial stages of CNT catalytic growth remain essentially unexplored. Here we present large-scale calculations designed to evaluate the intrinsic energies of all possible CNT caps for selected chiralities corresponding to tube diameters d ≲ 1 nm. Our quantitative analysis reveals that for all chiral angles χ the energy scale variability associated with the CNT caps is small, compared to that of the CNT/catalyst interface. Such a flat energy landscape cannot therefore be a dominant factor for chiral distribution and lends further credibility to interface-controlled scenarios for selective growth of single-walled CNT of desired chirality.

We explore how a few-layer graphene can undergo phase transformation into thin diamond film under reduced or no pressure, if the process is facilitated by hydrogenation of the surfaces. Such a "chemically induced phase transition" is inherently nanoscale phenomenon, when the surface conditions directly affect thermodynamics, and the transition pressure depends greatly on film thickness. For the first time we obtain, by ab initio computations of the Gibbs free energy, a phase diagram (P, T, h) of quasi-two-dimensional carbon-diamond film versus multilayered graphene. It describes accurately the role of film thickness h and shows the feasibility of creating novel quasi-two-dimensional materials. Further, the role of finite diameter of graphene flakes and possible formation of the diamond films with the (110) surface are described as well.

Bi- and trilayer graphene have attracted intensive interest due to their rich electronic and optical properties, which are dependent on interlayer rotations. However, the synthesis of high-quality large-size bi- and trilayer graphene single crystals still remains a challenge. Here, the synthesis of 100 μm pyramid-like hexagonal bi- and trilayer graphene single-crystal domains on Cu foils using chemical vapor deposition is reported. The as-produced graphene domains show almost exclusively either 0° or 30° interlayer rotations. Raman spectroscopy, transmission electron microscopy, and Fourier-transformed infrared spectroscopy were used to demonstrate that bilayer graphene domains with 0° interlayer stacking angles were Bernal stacked. Based on first-principle calculations, it is proposed that rotations originate from the graphene nucleation at the Cu step, which explains the origin of the interlayer rotations and agrees well with the experimental observations., (Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)