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4,055 results on '"YE Sheng"'

151. Structural basis for sugar perception by Drosophila gustatory receptors

Author

Ma, Demin, primary, Hu, Meiqin, additional, Yang, Xiaotong, additional, Liu, Qiang, additional, Ye, Fan, additional, Cai, Weijie, additional, Wang, Yong, additional, Xu, Ximing, additional, Chang, Shenghai, additional, Wang, Ruiying, additional, Yang, Wei, additional, Ye, Sheng, additional, Su, Nannan, additional, Fan, Minrui, additional, Xu, Haoxing, additional, and Guo, Jiangtao, additional

Published
2024
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152. Microbiome: Role in Inflammatory Skin Diseases

Author

Zhang, Xue-Er, additional, Zheng, Pai, additional, Ye, Sheng-Zhen, additional, Ma, Xiao, additional, Liu, E, additional, Pang, Yao-Bin, additional, He, Qing-Ying, additional, Zhang, Yu-Xiao, additional, Li, Wen-Quan, additional, Zeng, Jin-Hao, additional, and Guo, Jing, additional

Published
2024
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157. Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor

Author

Wang, Xuepei, primary, Cui, BoYao, additional, Jing, Lingling, additional, Wang, Xiaolin, additional, Wu, Maokun, additional, Wen, Yicheng, additional, Wu, Yishan, additional, Liu, Jinhao, additional, Zhang, Feilong, additional, Lin, Zidong, additional, Sun, Yanan, additional, Ren, Pengpeng, additional, Ye, Sheng, additional, Wang, Runsheng, additional, Ji, Zhigang, additional, and Huang, Ru, additional

Published
2024
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165. Predictive Value of Nutritional Risk for All-Cause Death and Functional Outcomes in Chinese Elderly Patients with Acute Stroke: A 3-Year Follow-Up Study

Author

Cong, Wen-Jie, primary, Liu, Zhi-Peng, additional, Liang, Yi-Xin, additional, Ye, Sheng-Lie, additional, Cai, Zhong-Ming, additional, Chen, Hao-Man, additional, Liao, Cheng-Wei, additional, Lin, Qun-Li, additional, Feng, Ren-Qian, additional, Zhou, Xu-Dong, additional, Wu, Yan-Zhi, additional, Sun, Le-Qiu, additional, Huang, Xue-Rong, additional, Zhang, Man-Man, additional, Huang, Gui-Qian, additional, and Zhu, Bei-Lei, additional

Published
2024
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170. Analysis of Suspension Characteristics of a New High-Temperature Superconducting Magnetic Levitation Bearing Based on Frozen-Image Model

Author

Wang, Si-yu, Wu, Nan, Yang, Dongsheng, Zhu, Ye-sheng, Filipe, Joaquim, Editorial Board Member, Ghosh, Ashish, Editorial Board Member, Prates, Raquel Oliveira, Editorial Board Member, Zhou, Lizhu, Editorial Board Member, Fei, Minrui, editor, Li, Kang, editor, Yang, Zhile, editor, Niu, Qun, editor, and Li, Xin, editor

Published
2020
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171. What's in a (First) Name? Personized Advertising Messages Enhance Consumer Perceived Ethicality.

Author

Septianto, Felix, Paramita, Widya, and Ye, Sheng

Subjects
CONSUMERS, SOCIAL belonging, PERSONAL names, ADVERTISING
Abstract

Despite the significance of consumer perceived ethicality (CPE) in the current business world, it remains unclear how companies can foster CPE among consumers. The present research investigates the potential of personizing a stakeholder (e.g., an employee or a supplier) by incorporating the person's first name in advertising messages. Across four experimental studies, this research shows how personized advertising messages can increase CPE when consumers perceive a high degree of social connectedness between a company and its employees or suppliers. The findings of this research add to the understanding of CPE and further offer practical implications for advertisers in developing effective strategies to foster CPE. [ABSTRACT FROM AUTHOR]

Published
2023
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183. Unveiling RowPress in Sub-20 nm DRAM Through Comparative Analysis With Row Hammer: From Leakage Mechanisms to Key Features

Author

Zhou, Longda, Ye, Sheng, Wang, Runsheng, and Ji, Zhigang

Abstract

In this article, we explored the underlying physical mechanisms of RowPress (RP)-induced leakage and its key features in sub-20 nm dynamic random access memory (DRAM). Employing 3-D TCAD simulations, single-sided and double-sided RP were studied and compared with their row hammer (RH) counterparts, focusing on the mechanisms of electron migration (EM) and capacitive crosstalk (CC). The results reveal that RP-induced leakage is not primarily driven by e-trap-assisted EM and CC mechanisms, which are the primary causes of the RH effect. Instead, it is the increased electrical field that facilitates EM, acting as the main contributor to the RP effect. Furthermore, the bit-flip directionality, temperature dependence, access pattern dependence, and data pattern dependence of RP were studied and differences from RH were emphasized, with the underlying mechanisms being thoroughly examined. The scalability of the RP effect is also evaluated. The findings provide a solid theoretical foundation for developing effective mitigation techniques and for the design of DRAM chips with enhanced reliability and security.

Published
2024
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184. Plasticity in single-crystalline Mg3Bi2thermoelectric material

Author

Zhao, Peng, Xue, Wenhua, Zhang, Yue, Zhi, Shizhen, Ma, Xiaojing, Qiu, Jiamin, Zhang, Tianyu, Ye, Sheng, Mu, Huimin, Cheng, Jinxuan, Wang, Xiaodong, Hou, Shuaihang, Zhao, Lijia, Xie, Guoqiang, Cao, Feng, Liu, Xingjun, Mao, Jun, Fu, Yuhao, Wang, Yumei, and Zhang, Qian

Abstract

Most of the state-of-the-art thermoelectric materials are inorganic semiconductors. Owing to the directional covalent bonding, they usually show limited plasticity at room temperature1,2, for example, with a tensile strain of less than five per cent. Here we discover that single-crystalline Mg3Bi2shows a room-temperature tensile strain of up to 100 per cent when the tension is applied along the (0001) plane (that is, the abplane). Such a value is at least one order of magnitude higher than that of traditional thermoelectric materials and outperforms many metals that crystallize in a similar structure. Experimentally, slip bands and dislocations are identified in the deformed Mg3Bi2, indicating the gliding of dislocations as the microscopic mechanism of plastic deformation. Analysis of chemical bonding reveals multiple planes with low slipping barrier energy, suggesting the existence of several slip systems in Mg3Bi2. In addition, continuous dynamic bonding during the slipping process prevents the cleavage of the atomic plane, thus sustaining a large plastic deformation. Importantly, the tellurium-doped single-crystalline Mg3Bi2shows a power factor of about 55 microwatts per centimetre per kelvin squared and a figure of merit of about 0.65 at room temperature along the abplane, which outperforms the existing ductile thermoelectric materials3,4.

Published
2024
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186. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

Author

Zhang, Kun, Li, Huan-huan, Grünberg, Peter, Li, Qiang, Ye, Sheng-tao, Tian, Yu-feng, Yan, Shi-shen, Lin, Zhao-jun, Kang, Shi-shou, Chen, Yan-xue, Liu, Guo-lei, and Mei, Liang-mo

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices., Comment: 11pages, 3figures

Published
2015

188. Kelvin Probe Force Microscopy (KPFM) for nanoelectronic device characterisation

Author

Ye, Sheng and Tsuchiya, Yoshishige

Subjects
621.38
Abstract

This project is to develope a new method of characterization for Silicon-nano-wire (SiNW) FET and SET devices by using KPFM technology to derive the information of local surface potential change on the channel of SiNW devices. The surface potential is related to many important parameters on material's surface, e.g. fixed surface charge, doping profile variation, distribution of charge carriers under applied bias, and individual dopant atoms near the surface. Those parameters are strongly related to the characteristics of SiNW devices. The KPFM equipment is designed to extract the contact potential difference (CPD) between tip and sample. The change of CPD is related to the Fermi energy level in materials. Therefore any factors which induce Fermi energy level change inside material are detectable. The significantly improved lateral resolution (sub-nanometer) gives us confidence for the measurement of local surface potential variation. Much of the time has been dedicated for the KPFM equipment calibration and optimization. By the end of PhD project the surface potential characterisation of three different types of the silicon-nano-wire (SiNW) devices (uniformly doped SiNW, n-pn SiNW Field-Effect-Transistor (FET), and n-p-n-p-n SiNW Single-Electron-Transistor (SET)) has been achieved. By using surface potential information the surface traped charge and change in local resistivity in SiNW is successfully estimated and the result is confirmed well agreed with the characterisation of other conventional method. This characterisation result also suggest the accuracy of local surface potential measurement. In-situ potential mapping and proling of n-p-n FET channel under device operation has been successfully performed. By comparing the data with simulation and electrical characterisation of the same device, correspondence between the line-shape of the surface potential and electrical field profiles and device parameters has been clarified for the first time. An attempt has been made to observe the surface potential of the channel of SET devices which have shown clear Coulomb oscillation at low temperature (5K). The formation of a conductive channel in 330-nm-wide SiNW channel by the side gate modulation is successfully observed. Four main achievements can be claimed at the end of this project. First, the metallurgic p-n junction in thin (50nm) SOI has been first time ever detected by Ex curve extraction from measured potential profile and the Ex curve was used to study the charge transport in the n-p-n structure under different biasing condition. Secondary, the novel single side gate doping modulated single electron transistors was fabricated and shown Coulomb oscillations which was consistent with theoretical predictions. Furthermore, the operation of FET/SET was investigated by scanned high resolution surface potential profile which revealed the status of p-n junction under biasing. In the end, this study discovered a new method to investigate nano-electronic devices by KPFM scan and more information such as change in build-in voltage at low temperature, and charge in charge state of island can be extracted if the high vacuum and low temperature is applied.

Published
2016

192. Junctional and somatic hypermutation-induced CX4C motif is critical for the recognition of a highly conserved epitope on HCV E2 by a human broadly neutralizing antibody

Author

Yi, Chunyan, Xia, Jing, He, Lan, Ling, Zhiyang, Wang, Xuesong, Yan, Yu, Wang, Jiangjun, Zhao, Xinhao, Fan, Weiguo, Sun, Xiaoyu, Zhang, Ronghua, Ye, Sheng, Zhang, Rongguang, Xu, Yongfen, Ma, Liyan, Zhang, Yaguang, Zhou, Honglin, Huang, Zhong, Niu, Junqi, Long, Gang, Lu, Junxia, Zhong, Jin, and Sun, Bing

Published
2021
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194. Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films.

Author

Wang, Xuepei, Wu, Maokun, Zhang, Ting, Cui, Boyao, Li, Yu-Chun, Liu, Jinhao, Wu, Yishan, Wen, Yichen, Ye, Sheng, Ren, Pengpeng, Zhang, David Wei, Lu, Hong-Liang, Wang, Runsheng, Ji, Zhigang, and Huang, Ru

Subjects
FERROELECTRIC thin films, FERROELECTRIC polymers, TUNGSTEN alloys, FERROELECTRIC devices, LEAKAGE, STRAY currents, DENSITY functional theory
Abstract

The recent discovery of ferroelectric properties in HfO2 has sparked significant interest in the fields of nonvolatile memory and neuromorphic computing. Yet, as device scaling approaches sub-nanometer dimensions, leakage currents present a formidable challenge. While tungsten (W) electrodes are favored over traditional TiN electrodes for their superior strain and interface engineering capabilities, they are significantly hampered by leakage issues. In this study, we elucidate a positive feedback mechanism attributable to W electrodes that exacerbates oxygen vacancy defects, as evidenced by density functional theory computations. Specifically, intrinsic oxygen vacancies facilitate the diffusion of W, which, in turn, lowers the formation energy of additional oxygen vacancies. This cascade effect introduces extra defect energy levels, thereby compromising the leakage characteristics of the device. We introduce a pre-annealing method to impede W diffusion, diminishing oxygen vacancy concentration by 5%. This reduction significantly curtails leakage currents by an order of magnitude. Our findings provide a foundational understanding for developing effective leakage suppression strategies in ferroelectric devices. [ABSTRACT FROM AUTHOR]

Published
2024
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195. Genetic characteristics of the first imported monkeypox virus in the mainland, China.

Author

TANG Yun, WEN Hai-yan, ZHAO Hua, HUANG Wei, YE Sheng, and PEI Xiao-fang

Subjects
MONKEYPOX, WHOLE genome sequencing, NUCLEOTIDE sequencing, SMALLPOX, VACCINIA
Abstract

Objective Different library construction methods, combined with high-throughput sequencing methods, were used to understand the genetic characteristics of the virus of the first confirmed imported monkeypox case in mainland China, and to compare the advantages and disadvantages of different library types. Methods The herpetic fluids and nasopharyngeal swabs of the first imported monkeypox case in the Chinese mainland were used as samples. After nucleic acid extraction and quantification, the library was directly constructed or the amplicon library was constructed using the monkeypox virus whole genome capture kit, and the whole genome sequence of the virus was obtained by high-throughput sequencing. Combined with 34 monkeypox virus sequences downloaded from the NCBI and GISAID databases, a phylogenetic evolutionary tree was constructed using vaccinia, variola, and cowpox sequences as out groups. Results The whole genome sequence of the virus was obtained by both library construction methods, named hMpxV/China/CQ-CQCDC-001/2022, which belongs to the monkeypox virus branch lib, located in the same branch as hMpxV/Germany/BE-ChVir28656/2022 belonging to the IIb B.1 branch. Metagenomic libraries have more uniform sequence coverage than amplicon libraries, but the sequencing depth is lower and the effective data volume accounts for less. Conclusion Clade IIb B.1 monkeypox viruses have already been introduced into the mainland China, and the sequencing of subsequently discovered monkeypox viruses should be based on the sample size and sequencing timeframe, sequencing cost-effectiveness ratio, and other factors to choose the appropriate library construction method. [ABSTRACT FROM AUTHOR]

Published
2024
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