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Prognostic factors of chemotherapy against advanced testicular cancer were analysed in 33 cases studied by East Japan Testicular Tumor Study Group. In this study a discriminant analysis of quantification theory (a multivariate analysis) was adapted, taking 7 factors as comparative variables. The significant factors for complete tumor response were clinical stage, histology, and tumor markers (HCG-beta, AFP). Prognostic score was calculated in each case by quantification theory, which correctly discriminated the group with CR from that without CR, at a probability of 90.1%. The results of our study indicate that the outcome of chemotherapy on advanced testicular cancer may be predicted with probability, by patients' status and adopted treatment. It may enable one to make an adequate treatment schedule for each patient.

Bone marrow and spleen are the major hematopoietic tissue in adult mice. However, little is known about the specific mechanism regulating hematopoiesis within these tissues. Since Dexter et al. first described conditions to maintain bone marrow hematopoiesis, long term bone marrow culture (LTBMC) has been developed in order to analyze the mechanism of the maintenance of proliferation and differentiation of hematopoietic stem cells in vitro. Furthermore, several stromal cell lines which are able to support the growth and differentiation of hematopoietic lineage, has been established from LTBMC. Although it is well known that bone marrow stromal cell lines are able to produce colony stimulating factors, it has been suggested that the stromal cell factors which involve membrane bound moieties must have a key role in the regulation of hematopoiesis. We expect that monoclonal antibodies to the surface of bone marrow stromal cells could detect such a critical stroma-associated protein that bounds the cell surface of the bone marrow stroma.

The purpose of this study is to clarify the limit of extended hepatectomy, such as 84% hepatectomy for normal liver and 70% hepatectomy for Dimethylnitrosamine-induced cirrhotic liver in dogs, using ligation of the portal vein branch (PBL) in advance. Portal vein branch could be ligated up to 84% area in normal liver and 70% area in cirrhotic liver, for survival. Four weeks after PBL the non-ligated area of the liver was obviously enlarged, and the hepatic function was almost equal to that before PBL. Four weeks after PBL of 84% area in normal liver and 70% area in cirrhotic liver, the ligated area was resected by two staged procedure. Although the four-week survival rates after one staged 84% hepatectomy in normal liver and 70% hepatectomy in cirrhotic liver were 22.2% and 0% respectively, they markedly improved such as 66.7% and 50.0% after two staged hepatectomy respectively, and they were 42.1% and 30.0% respectively even if the death of PBL was count in. ICG Rmax prior to hepatectomy after PBL indicated clearly the functional resectability of the liver. The remnant liver function after two staged hepatectomy was significantly better than that after one staged hepatectomy, due to sufficient hepatic blood flow.

Using a questionnaire, the urinary function of 68 patients and the sexual function of 81 patients were evaluated after rectal cancer operation. The patients with carcinoma of the rectum suffered from severe damage to the urinary system following Miles' operation (Miles) which included 85.7% of the male and 42.9% female. On the other hand, 31.8% male and 33.3% female suffered following anterior resection or pull through operation (AR). Following Miles 64.3% male and 71.4% female had developed urinary incontinence while 36.4% male and 33.3% female developed the same following AR. These results indicate that dysfunction of the urinary voiding system was more common in the males while the females experienced urinary incontinence. This difference may be due to the severity of the surgical intervention to the bladder neck and partly to the anatomical difference of pelvic floor and of urethra. The recovery was poor in the patients who had developed disorder of the urinary voiding system and unfortunately 84% patients following Miles and 75% patients after AR could not return to normal voiding even five years after operation. Urinary incontinence persisted after Miles and after AR in 77.8% and 31% patient respectively. Sexual activity was remarkably reduced following Miles. The males lost the power of erection and ejaculation, the females suffered due to the existence of artificial colostomy. In order to maintain the normal physiological activity of the urogenital system following operation, it is important to avoid any damage preferably to the bladder neck and urethra in case of males and to avoid artificial stoma in females.

We have applied a combinatorial technique to fabricate work function (WF) tuned Pt-W alloy films and used the films as metal electrodes for HfO2∕SiO2∕Si capacitors. As the ratio, RPt, of Pt to W changes from 0 to 1, the WF value varies continuously from 4.7 to 5.5 eV. This tunability enables us to systematically investigate the effect of WF variation on electrical properties. After a forming gas annealing process, the values of flatband voltage (Vfb) from capacitance-voltage properties are almost constant, regardless of the WF variation, because of oxygen vacancy formation that results in Fermi level pinning. On additional oxidizing gas annealing (OGA), the effect of WF value on Vfb becomes dominant. However, the difference in Vfb between W and Pt is 0.34 V, which is much smaller than the observed WF difference of 0.8 eV. We attribute this phenomenon to the lowering of the effective WF due to an electric dipole, induced by oxygen vacancy formation at the metal/HfO2 interface. Moreover, a decrease in Vfb i...

Leakage sites in hafnium silicon oxynitride gate dielectrics of metal-oxide-semiconductor field-effect transistors were directly identified by means of electron-beam-induced current (EBIC) technique. Leakage sites were observed as bright spots mostly on the periphery of gate. With the gate bias increasing, the EBIC current of bright spots increased exponentially, but the number of bright spots did not increase.

The impact of TiN deposition on thin HfO2 films formed on Si substrates was studied using x-ray photoelectron spectroscopy and a monoenergetic positron beam. For the predeposition sample, the positrons implanted into Si were found to diffuse toward the HfO2∕Si interface under the influence of the electric field, suggesting the presence of negative charges in HfO2. After TiN was deposited by chemical vapor deposition, no large change in the defect species was observed. After TiN was deposited by physical vapor deposition, however, positive charges were introduced at the TiN∕HfO2 interface, which were associated with the incorporation of nitride into HfO2 and/or the plasma damage at the surface of HfO2, and the resultant formation of positively charged oxygen vacancies.

The impact of nitridation on open volumes in thin HfSiOx films fabricated on Si substrates by atomic layer deposition was studied using monoenergetic positron beams. For HfSiOx, positrons were found to annihilate from the trapped state due to open volumes which exist intrinsically in an amorphous structure. After plasma nitridation, the size of open volumes decreased at a nitrogen concentration of about 20at.%. An expansion of open volumes, however, was observed after postnitridation annealing (PNA) (1050°C, 5s). We found that the size of open volumes increased with increasing nitrogen concentration in HfSiOx. The change in the size of open volumes was attributed to the trapping of nitrogen by open volumes, and an incorporation of nitrogen into the amorphous matrix of HfSiOx during PNA. We also examined the role of nitrogen in HfSiOx using x-ray photoelectron spectroscopy and first principles calculations.

The large homogeneous bandwidth of a thulium-doped fibre amplifier makes it suitable for optical gain clamping. This has been demonstrated experimentally. Gain variation of 1.2 dB for 15 dB input dynamic range has been achieved, with less than 1 dB gain ripple over 20 nm, and no noise figure degradation, while pumped at 1050 nm.

A 65 nm EDFA and a 100 nm EDFA/Raman hybrid amplifier with over 20 dB gain based on cerium codoped fluoride EDF with 980 nm pumping are demonstrated. The hybrid configuration also achieves low-noise performance over 100 nm.

We propose a channel engineering guideline for the low threshold voltage (V th) metal oxide silicon field effect transistor (MOSFET) with metal gate, which is promising for highly miniaturized MOSFETs. For lowering V th of metal gate MOSFET, counter doping is useful. However, a buried channel with heavy counter doping has several disadvantages, such as the degradation of subthreshold swing. In this work, using a design with light counter doping, a surface channel complementary metal oxide silicon (CMOS) of low V th with a single work function gate electrode was successfully fabricated showing superior characteristics. Device simulation was used to investigate the impacts of the channel profile of such a device. It was found that using counter doping with low concentration to an optimized depth results in better subthreshold characteristics than that using shallow counter doping with high concentration. A lower counter dopant concentration also suppresses V th deviations. The damascene gate process was used in the fabrication.

Distributed Raman amplification is used to reduce the optical power launched into the transmission fibre of an analogue communication system. This reduces all impairments caused by fibre nonlinearities. The authors have experimentally demonstrated 8–15 dB nonlinear crosstalk reduction in an analogue wavelength division multiplexed (WDM) system.

Models are presented which show that, for WDM systems, XPM and FWM in EDFAs can be far larger for tellurite than for silica (tens of dB larger for RWM), because tellurite is highly nonlinear. Experimental results for XPM are presented.

An agglomeration resistant self-aligned silicide (SALICIDE) process using N2 implantation into TiSi2 films has been developed. The film morphology and the film sheet resistance after high-temperature annealing in an Ar ambient were evaluated as a function of implanted nitrogen doses. High implantation doses of 5×1016 cm-2 or more realized the completely flat film after the annealing; however there is an optimum dose of approximately 1×1016 cm-2 for maintaining the film sheet resistance at its minimum value. This phenomenon could be explained by the fact that the main composition of the film was changed from TiSi2 (C54) to TiN with a 5×1016 cm-2 or more nitrogen implantation and that the TiN film contains Si crystals. A successful application of this technique to a 0.8 µm n-MOS transistor is also presented.

This paper describes a fast 8K × 8 static RAM fabricated with a mixed CMOS technology. To realize a fast access time and yet a low active power, a block-oriented die architecture with four submodules and a new sense amplifier are applied. An address access time of 34 ns and a chip select access time of 38 ns have been achieved at an active power of 90 mW. In addition to redundant memory cells, the RAM incorporates a spare element disable (SED) function to make it easy to obtain the information of the replaced memory cell. Another feature is a high latchup immunity of the CMOS peripheral circuits. This is obtained from an optimized well structure and guard bands around the wells. A 2-µm design rule combined with the double-level polysilicon layer allowed for layout of the NMOS memory cell in 266.5 µm2and design of the die in 34.3 mm2.

A 32K words by 8-bit static RAM fabricated with a CMOS technology is described. The key feature of the RAM is a tri-level word-line, in which an automatic power down by a pulsed word-line in the READ cycle and a power saving by a middle-level word-line in the WRITE cycle are combined. This circuit technique minimizes bitline swing, shortens the precharging time, and depresses the transient current. An improved address transition detection circuit reduces the chip select access time. The sense amplifier uses internally synchronized signals for improved operation. The RAM has a typical access time of 45 ns with an active power dissipation of 7 mW. The peak transient current is less than 40 mA. A double-level polysilicon technology with a 1.3-/spl mu/m design rule allowed layout of the NMOS memory cell in an area of 116.0 /spl mu/m/SUP 2/ and the die in 49.6 mm/SUP 2/.

Through a metal option, a 256K word/spl times/1-bit and a 64K word/spl times/4-bit CMOS SRAM organization has been obtained. A fast access time has been achieved with a short bit-line structure and a data-bus precharging technique which minimize the bit-line and data-bus delay. A feedback-controlled address-transition-detector circuit has been adopted to assure the fast access time in the presence of address skew. A 1.0-/spl mu/m double-polysilicon and single-metal process technology with a polycide gate offers a memory cell size of 90 /spl mu/m/SUP Z/ and a chip size of 47.4 mm/SUP 2/.

A 4-bit flash A/D converter has been fabricated using a silicon-on-insulator (SOI)/CMOS process technology. A transistor structure is introduced to suppress the floating-body effect in SOI n-channel transistor. The maximum conversion rate is 30 Msample/s. The power consumption is 18 mW (V/sub dd/=5 V) at 1 Msample/s. The SOI A/D converter is useful for the realization of image signal processing systems by using a stacked three-dimensional structure. >

VLSI will be reaching to the limit of minimization in the 1990s, and after that, further increase of packing density or functions might depend on the vertical integration technology. Three-dimensional (3-D) integration is expected to provide several advantages, such as 1) parallel processing, 2) high-speed operation, 3) high packing density, and 4) multifunctional operation. Basic technologies of 3-D IC are to fabricate SOI layers and to stack them monolithically. Crystallinity of the recrystallized layer in SOI has increasingly become better, and very recently crystalaxis controlled, defect-free single-crystal area has been obtained in chip size level by laser recystallization technology. Some basic functional medels showing the concept or image of a future 3-D IC were fabricated in two or three stacked active layers. Some other proposals of subsystems in the application of 3-D structure, and the technical issues for realizing practical 3-D IC, i.e., the technology for fabricating high-quality SOI crystal on complicated surface topology, crosstalk of the signals between the stacked layers, total power consumption and cooling of the chip, will also be discussed in this paper.

A 64-kbit SRAM with high latch-up immunity has been developed with the application of a well-source structure combined with an epi-substrate. Heavy-ion beam exposure tests reveal that the device has high immunity from cosmic-ray induced latch-up, and the soft-error cross section is about 8.6 × 10-7cm2/(bit particle) for 73-MeV Ar ions.

In order to clarify an influence of the spin density or the optical absorption coefficient on the pulsed‐laser annealing effect, we have performed systematically ion‐backscattering and channeling analysis and ESR measurement as a funcion of spin densities in ion‐implanted Si samples. It was found that the spin density can yield a good criterion for predicting the annealing effect because the spin density is strongly correlated with the optical absorption coefficient. From spin‐density measurements, the initial absorption coefficient of the as‐implanted Si layer was found to be a very important factor which dominates the effect of laser annealing even if there is a nonlinear absorption mechanism.

Experimental evidence is presented for stimulated far‐infrared emission from population‐inverted hot‐carrier system in p Ge. The spectroscopic study by use of an n‐InSb cyclotron‐resonance detector reveals that the spectrum of the emission consists of a fairly sharp band located at the photon energy ∼5 or ∼10 meV depending on the applied fields.

Follow-up studies on 172 patients who had undergone curative surgery for breast cancer, were done. 1) There was no significant difference in the 5-year-survival rate between stage I and stage II, however, this survival rate was lower in stage III. 2) The survival rate of patients with metastasis to fewer than 3 lymph node tended to be higher than in patients with metastatic involvement of 4 or more lymph nodes. 3) Patients with papillo-tubular type cancer had the best prognosis followed by medullo-tubular type and scirrhous type. 4) The operative procedures used made no significant difference on the long-term results, although extended operation for stage II cancer showed better result than typical operation in terms of 10-year-survival. 5) The chemotherapy group showed better results than the radiation-treated group in terms of 5-year-survival.

To prevent urogenital infections occurring after urethrocystoscopy, we have studied the prevalence of these diseases without the use of antibiotic agents subsequent to urethrocystoscopy to determine the relative importance of aseptic procedures and whether administration of antibiotics is really required for this purpose. Patients enrolled in the present study included those undergoing urethrocystoscopy at four hospitals, totaling 146 patients (93 male and 53 female patients). All of these patients were apparently free of urogenital infections prior to urethrocystoscopy, with less than 5 leucocytes per field in urinary sediment, and a bacteria count of less than 10(4) cells/ml. Each patient was checked between 3 and 14 days after examination for 1) presence of clinical symptoms such as fever, bladder irritation symptoms and urethral secretion, 2) urinalysis and urinary culture, and 3) palpation of epididymis, testis and prostatic gland as required. The endoscope was sterilized for 20 to 30 minutes with 2% glutaraldehyde at 3 clinical institutions and with 0.5% chlorhexidine at the other, in a total of 116 and 30 patients, respectively. Sterilized distilled water was used as perfusate. The external urethral meatus of the subject was disinfected with 0.5% chlorhexidine, followed by local anesthesia with xylocaine jelly. Ten minutes after disinfecting the hands of the examiner, urethroscopy and cystoscopy were performed in this order. Urinary tract infection was detected in one male patient (1.1%) and 2 female patients (3.3%). In these cases, the endoscope was sterilized with glutaraldehyde in 2 cases and with chlorhexidine in the other. None of the subjects demonstrated fever or genital infections.(ABSTRACT TRUNCATED AT 250 WORDS)

This paper demonstrates the technological approach to the high performance thin film transistor (TFT) fabricated by using the laser-recrystallization technique on a fused quartz wafer and its application for active matrix type liquid crystal display (LCD) with transmissive mode. Problem to be overcome and still ahead in the recrystallization, TFT performance, and application for LCD are addressed.

A new very thin glass fiber endoscope ("baby scope") has been developed, which can be passed through the channel of a modified duodenoscope ("mother scope") for catheterization of the choledochus or of the pancreatic duct. Peroral choledocho-pancreatoscopy (PCPS) was performed in 9 patients, the endoscopic results are presented. Other new auxiliary instruments for diagnostic or therapeutic purposes in biliary or pancreatic diseases are described: a brushing catheter, a special biopsy forceps, a retention probe and a balloon-tipped catheter.

Endoscopic sphincterotomy of the ampulla of Vater was performed in seven patients suffering from gallstones in the common bile duct and/or bile flow stasis. After this procedure, spontaneous delivery of gallstones occurred in two cases and a gallstone was extracted by our basket-tipped catheter in two cases. The electromyogram of the sphincter of Oddi after endoscopic sphincterotomy showed the similar patterns and rhythms to those before this procedure. Thus, the function (bile flow mechanism) of the sphincter was not destroyed by this procedure. Morphologic and physiologic data, therefore, lead to the conclusion that endoscopic sphincterotomy is a safe and useful procedure.