151. A 0.5erms− Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion Gain
- Author
-
X. Ge and Albert J. P. Theuwissen
- Subjects
Correlated double sampling ,subelectron ,02 engineering and technology ,Topology ,01 natural sciences ,Transfer function ,law.invention ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Image noise ,Electronic engineering ,sinc-type filter ,Electrical and Electronic Engineering ,Image sensor ,010302 applied physics ,Physics ,conversion gain (CG) ,Noise measurement ,Pixel ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,period controlled ,low pass ,Electronic, Optical and Magnetic Materials ,Capacitor ,low noise ,CMOS image sensor ,pixel-level amplification ,Charge-domain sampling - Abstract
A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS, which is implemented in a standard 0.18- $\mu \text{m}$ CIS process, features pixel-level amplification and achieves an input-referred noise of 0.5 erms− with a correlated double sampling period of $5~ \mu \text{s}$ and a row read-out time of $10~\mu \text{s}$ . The proposed structure also realizes a variable conversion gain (CG) with a period-controlled method. This enables the read-out path CG and the noise-equivalent number of electrons to be programmable according to the application without any change in hardware. The experiments show that the measured CG can be tuned from $50~\mu \text{V}$ /e- to 1.6 mV/e- with a charging period from 100 ns to $4~\mu \text{s}$ . The measured characteristics of the prototype CIS are in a good agreement with expectations, demonstrating the effectiveness of the proposed techniques.
- Published
- 2017