151. Effects of annealing on optical properties of Zn-implanted ZnO thin films
- Author
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X.T. Zu, S. W. Xue, Hongxiang Deng, W.G. Zheng, Z.L. Yuan, X.D. Jiang, and L.X. Shao
- Subjects
Diffraction ,Photoluminescence ,Materials science ,Silica glass ,Annealing (metallurgy) ,business.industry ,Mechanical Engineering ,Metals and Alloys ,Deep level emission ,Analytical chemistry ,Ion implantation ,Optics ,Absorption edge ,Mechanics of Materials ,Materials Chemistry ,Thin film ,business - Abstract
Zn-ion-implantation to a dose of 1 × 1017 ions/cm2 was performed on ZnO thin films deposited on fused silica glass substrates by the sol–gel technique. After ion implantation, Zn-implanted ZnO films were annealed in air at different temperatures from 500 to 900 °C. The effects of ion implantation and post-thermal annealing on the structural and optical properties of the ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL) and optical absorption measurements. XRD reveals that diffraction peaks recover at ∼700 °C. Optical absorption measurements show that the absorption edge blueshifts when the annealing temperature is below 600 °C while redshifts when the annealing temperature exceeds 600 °C. Urbach energy decreases with increasing the annealing temperature from 500 to 600 °C while increases from 600 to 900 °C. PL results showed that both near band edge (NBE) excitonic UV emission and defect related deep level emission (DLE) increased with increasing annealing temperatures from 500 to 900 °C.
- Published
- 2008
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