1,100 results on '"Toyoda, S."'
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152. Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates
153. Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure
154. Effects of thermal annealing on charge density and N chemical states in HfSiON films
155. In-Depth Profile of Hf-Based Gate Insulator Films on Si Substrates Studied by Angle-Resolved Photoelectron Spectroscopy Using Synchrotron Radiation
156. Cathodoluminescence microcharacterization of ballen silica in impactites
157. Chemical‐state‐resolved in‐depth profiles of gate‐stack structures on Si studied by angular‐dependent photoemission spectroscopy
158. Control of oxidation and reduction reactions at HfSiO∕Si interfaces through N exposure or incorporation
159. Analysis of x-ray irradiation effect in high-k gate dielectrics by time-dependent photoemission spectroscopy using synchrotron radiation
160. Thermal stability in a-Si/HfSiO(N)/Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation
161. Provenance changes of eolian dust at Lingtai section in the Chinese Loess Plateau since 7 Ma and its implication for desert development in East Asia
162. Depth profiling of chemical states and charge density in HfSiON by photoemission spectroscopy using synchrotron radiation
163. Suppression of silicidation and crystallization by atmosphere controlled annealing for poly-crystalline silicon/HfO2∕SiO2∕Si gate stack structures
164. Contribution of aeolian dust in Japan Sea sediments estimated from ESR signal intensity and crystallinity of quartz
165. High Performance and High Reliability Dual Metal CMOS Gate Stacks Using Novel High-k Bi-layer Control Technique
166. Tinv Scaling and Jg Reducing for nMOSFET with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone Water Treatment Process
167. Annealing-induced Interfacial Reactions between Gate Electrodes and HfO2/Si Gate Stacks Studied by Synchrotron Radiation Photoemission Spectroscopy
168. Isotopically enriched ammonium shows high nitrogen turnover in the pile top zone of dairy manure compost.
169. Development of an atmospheric N2O isotopocule model and optimization procedure, and application to source estimation.
170. Large magnetochromism in multiferroic MnWO4.
171. Feasibility and efficacy of intraperitoneal docetaxel administration as salvage chemotherapy for malignant gynaecological ascites.
172. Ferroelectricity driven by charge ordering in the A-site ordered perovskite manganite SmBaMn2O6.
173. Crystal structures and band offsets of ultrathin HfO2–Y2O3 composite films studied by photoemission and x-ray absorption spectroscopies
174. Erratum: “Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2∕Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy” [Appl. Phys. Lett. 89, 012102 (2006)]
175. Composition dependence of band offsets for (LaAlO3)1−x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy
176. Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2∕Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy
177. Phase I-II trial of irinotecan (CPT) and cisplatin (P) as concurrent chemo-radiotherapy (CCRT) for patients (pts) with primary local advanced cervical cancer (LACC): A KCOG 0328 trial
178. Mechanism of Hf-silicide formation at interface between poly-Si electrode and HfO2∕Si gate stacks studied by photoemission and x-ray absorption spectroscopy
179. The Third International Intercomparison on EPR Tooth Dosimetry: part 2, final analysis
180. Surface electronic structure in transition-metal (Cr and Mn) doped GaAs (001) studied by in situ photoemission spectroscopy
181. Interfacial reaction in ZrO2/Si gate-stack structure probed by photoemission spectroscopy combined with combinatorial annealing system
182. Measurement of isotopomer signatures of N2O in groundwater
183. Crystallization and chemical structures with annealing in ZrO2 gate insulators studied by photoemission spectroscopy and x-ray absorption spectroscopy
184. Spin–spin relaxation times of the center in quartz with and without irradiation: implications for the formation process of the oxygen vacancies in nature
185. Precise determination of band offsets and chemical states in SiN∕Si studied by photoemission spectroscopy and x-ray absorption spectroscopy
186. Chemical reaction at the interface between polycrystalline Si electrodes and HfO2∕Si gate dielectrics by annealing in ultrahigh vacuum
187. TSSG pulling and LPE growth of KTa Nb1−O3 for optical waveguides
188. Highly efficient waveguide device using electro-optic KTN crystals
189. Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si
190. Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy
191. Effects of interlayer and annealing on chemical states of HfO2 gate insulators studied by photoemission spectroscopy
192. Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy
193. KTN-crystal-waveguide-based electro-optic phase modulator with high performance index
194. TSV process solution for 3D-IC.
195. Effect of nitrogen doping into SiO2 studied by photoemission spectroscopy
196. Dual isotope and isotopomer ratios of N2O emitted from a temperate grassland soil after fertiliser application
197. Chemistry and band offsets of HfO2 thin films for gate insulators
198. Density, viscosity and surface tension of 50RO–50P2O5 (R: Mg, Ca, Sr, Ba, and Zn) glass melts
199. Artificial optical bleaching of the Aluminium center in quartz implications to ESR dating of sediments
200. Precise isotope abundance ratio measurement of nitrous oxide using diode lasers
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