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377 results on '"Sudarshan, T.S."'

165. Postinoculating ductile iron with graphite

Author

Sudarshan, T.S. and Mallya, U.D.

Subjects
Iron, Nodular -- Analysis, Iron-founding -- Analysis, Business, Metals, metalworking and machinery industries
Abstract

DUCTILE IRON is being used increasingly in the automotive industry because of its excellent strength, ductility, and casting characteristics, along with lower processing costs and weight. Strength of nodular irons [...]

Published
1986

173. Evolution of interface in pulsed electrode deposited titanium diboride on copper and steel

Author

Agarwal, A., Dahotre, N.B., and Sudarshan, T.S.

Abstract

Pulsed electrode surfacing (PES) is a microwelding surfacing process for the successful deposition of ultrahard wear and erosion resistant ceramic coatings on metals. The present study investigates titanium diboride deposition on oxygen free high conductivity Cu. A thin and irregular coating with cracks was obtained on the Cu substrate, with the ceramic/metal interface distinct in TiB2deposited on Cu leading to decohesion at the interface. The present work has been compared with an earlier study on TiB2coatings deposited on 1018 steel using the PES technique. The difference in nature of the interfaces has been related to wettability, and the role of copper and iron as binders for TiB2ceramics has been addressed. Iron acts as an excellent binder for TiB2, providing a crack free coating and a strong interface, whereas Cu is a poor binder, leading to a weak ceramic/metal interface.

Published
1999
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175. Diamond deposition from a cascaded arc DC plasma

Author

Bachmann, P.K., Lydtin, H., Wiechert, D.U., Beulens, J.J., Kroesen, Gerrit, Schram, Daan, Sudarshan, T.S., Bhat, D.G., Applied Physics, Elementary Processes in Gas Discharges, and Plasma & Materials Processing

Published
1989

176. Electrical properties of high resistivity 6H-SiC under high temperature/high field stress.

Author

Gradinaru, G. and Sudarshan, T.S.

Subjects
*CRYSTALS, *SILICON carbide
Abstract

Examines the electrical properties of single-crystal silicon carbide. Current-voltage characteristics of lateral metal-semiconductor-metal test structures; Effects of ambient temperature on the dominant activation energy of semi-insulating vanadium-compensated material; Discussion on the resistivity of undoped silicon carbide.

Published
1997
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177. High field effects in high resistivity silicon carbide in lateral configurations.

Author

Sudarshan, T.S. and Gradinaru, G.

Subjects
*CRYSTALS, *COMPLEX compounds, *CHEMICAL reactions
Abstract

Analyzes the high field performance of single-crystal bulk 6H-SiC in relatively high resistivity. Prebreakdown and breakdown phenomena of silicon carbide (SiC) at high fields; Influence of the electrode configuration, gap length, sample geometry and contact technology on the high field responses of SiC; Details on the ohmic response.

Published
1995
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178. Diamond growth by laser-driven reactions in a CO/H[sub 2] mixture.

Author

Rebello, J.H.D., Subramaniam, V.V., and Sudarshan, T.S.

Subjects
MIXTURES, DIAMONDS
Abstract

Describes the use of carbon monoxide/hydrogen gas mixture for diamond growth on single crystal silicon substrate. Excitation of gas mixture reaction via excimer laser irradiation; Occurrence of diamond particle growth on unheated substrate; Observation of diamond growth using scanning electron microscopy and reflection electron diffraction pattern.

Published
1993
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