151. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
- Author
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Tian Liang, He Zhao, Wudi Wang, Nai Phuan Ong, Tonica Valla, Andras Gyenis, Ivo Pletikosic, Kenneth S. Burch, Jingjing Lin, R. J. Cava, Ali Yazdani, Yao Tian, Satya Kushwaha, Huiwen Ji, Saul H. Lapidus, and Alexei V. Fedorov
- Subjects
Diffraction ,Materials science ,Photoemission spectroscopy ,Science ,General Physics and Astronomy ,02 engineering and technology ,01 natural sciences ,General Biochemistry, Genetics and Molecular Biology ,Article ,symbols.namesake ,0103 physical sciences ,010306 general physics ,Quantum tunnelling ,Surface states ,Multidisciplinary ,Condensed matter physics ,Quantum oscillations ,General Chemistry ,021001 nanoscience & nanotechnology ,cond-mat.mtrl-sci ,Topological insulator ,symbols ,cond-mat.str-el ,0210 nano-technology ,Single crystal ,Raman scattering - Abstract
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states., An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects. Here, the authors show that Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman technique might overcome this hurdle.
- Published
- 2016
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