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1,096 results on '"Sano, N."'

153. Formation of Shallow PN Junction by Cluster Boron Implantation and Rapid Annealing Using Infrared Semiconductor Laser.

Author

Hasumi, M., Ukawa, K., Sameshima, T., Sano, N., Naito, M., and Hamamoto, N.

Subjects
PIN diodes, CLUSTER theory (Nuclear physics), ION implantation, BORON, SEMICONDUCTOR lasers, INFRARED detectors, HEAT treatment, ELECTRIC properties of materials
Abstract

We report shallow PN junctions and analysis of their electrical characteristics. Infrared semiconductor laser annealing using carbon films as optical absorption layer was adapted to the activation of silicon implanted with boron cluster ions. We carried out implantations of boron clusters at 6 keV with an equivalent boron concentration of 1.0×1015 cm-2. Laser irradiation at 375 kW/cm2 was conducted to activate impurities. Secondary ion mass spectroscopy revealed that boron atoms with a concentration of 6.0×1014 cm-2 were incorporated into silicon surface within a 10 nm depth. The free carrier absorption analyses and current-voltage characteristics of the PN junction diode indicated that the boron atoms were effectively activated by laser annealing. [ABSTRACT FROM AUTHOR]

Published
2011
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166. Clinical use of stereotactic 3-D conformal multiple dynamic arc radiotherapy for stage I non-small cell lung cancer using a linear accelerator combined with self-moving ct scanner and patient’s self-breath and beam control technique

Author

Onishi, H, primary, Kuriyama, K, additional, Komiyama, T, additional, Tanaka, S, additional, Sano, N, additional, Aikawa, Y, additional, Tateda, Y, additional, Araki, T, additional, Sano, M, additional, and Hori, M, additional

Published
2002
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173. Stationary collective fluctuation in Brownian motions of particles within the limited field of vision.

Author

Otsuka, K., Abe, K., Sudo, S., Sano, N., Makino, H., and Ko, J.-Y.

Subjects
TIME measurements, LASERS, SPECTRUM analysis, LASER beams, LASER spectroscopy, MATHEMATICAL physics
Abstract

We report on our successful real-time measurement of the dynamic frequency-shift of light by particles in Brownian motion through self-mixing laser spectroscopy with extreme optical sensitivity. We show that the changes over time in the non-stationary random walks of small particles suspended in water result in different averaged dynamics when the field of vision for particles seen by the laser beam (scale of the observation) is changed. At a small focal volume of the laser beam, in which the relevant diffusion broadening is observed, the averaged motion which can be represented by the motion of a “virtual” single particle, whose velocity possesses a Gaussian-white property, constitutes stationary fluctuations, featuring random sequences of the Lorentz-type spectrum and double-peaked probability distribution function for displacements. © 2004 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2004
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184. Passivation of Silicon Surface by Laser Rapid Heating.

Author

Abe, H., Akiyama, C., Hasumi, M., Sameshima, T., Mizuno, T., and Sano, N.

Subjects
PASSIVATION, SILICON surfaces, LASER heating, SUBSTRATES (Materials science), SURFACE coatings, SEMICONDUCTOR lasers, RECOMBINATION in semiconductors
Abstract

We report rapid laser-induced passivation of the silicon surface. When the top surfaces of n-type 500-μm-thick silicon substrates with surfaces coated with 100 nm thermally grown SiO2 layers (initial samples) were irradiated with Ar plasma at 50 W for 120 s, the 635-nm-light induced minority carrier effective lifetime τeff decreased from 1.7×10-3 (initial) to 1.7×10-5 s because Ar plasma caused substantial carrier recombination defect states at the silicon surfaces, τeff was markedly increased to 1.7×10-3 s by 940 -nm-semiconductor laser irradiation at 3.57×10-4 W/cm2 for 4 ms. Laser heating effectively decreased the density of plasma induced carrier recombination defect. However, laser heating of the initial sample at 4.0×10 W/cm2 decreased τeff from 2.2×10-3 (initial) to 1.7×10-4 s. Additional laser heating at 3.70×10-4 W/cm2 increased τeff to 3.9×10-4 s-and it partially cured laser induced carrier recombination defects. [ABSTRACT FROM AUTHOR]

Published
2014
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