151. Graded bit patterned magnetic arrays fabricated via angled low-energy He ion irradiation
- Author
-
Paul Ruchhoeft, Dmitri Litvinov, Sakhrat Khizroev, A Nasruallah, and Long Chang
- Subjects
Materials science ,chemistry.chemical_element ,Bioengineering ,Helium ,Ion ,chemistry.chemical_compound ,Nuclear magnetic resonance ,Materials Testing ,Heavy Ions ,General Materials Science ,Irradiation ,Particle Size ,Electrical and Electronic Engineering ,Anisotropy ,Hydrogen silsesquioxane ,business.industry ,Mechanical Engineering ,Cobalt ,Equipment Design ,General Chemistry ,Coercivity ,Nanostructures ,Equipment Failure Analysis ,chemistry ,Resist ,Mechanics of Materials ,Magnet ,Magnets ,Optoelectronics ,business ,Palladium - Abstract
A bit patterned magnetic array based on Co/Pd magnetic multilayers with a binary perpendicular magnetic anisotropy distribution was fabricated. The binary anisotropy distribution was attained through angled helium ion irradiation of a bit edge using hydrogen silsesquioxane (HSQ) resist as an ion stopping layer to protect the rest of the bit. The viability of this technique was explored numerically and evaluated through magnetic measurements of the prepared bit patterned magnetic array. The resulting graded bit patterned magnetic array showed a 35% reduction in coercivity and a 9% narrowing of the standard deviation of the switching field.
- Published
- 2012
- Full Text
- View/download PDF