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We calculated Single Event Upset (SEU) cross-section as well as the neutron Soft Error Rate (SER) at ground level for three SRAMs (90 nm, 65 nm an 40 nm). For this purpose, we first investigate the transient current pulse induced at each drain electrode, by using the diffusion model for the transient current pulses. Then, we performed the same simulations by replacing each transient current by a simple double exponential law model, for which the parameters were set in order to keep the same fundamental parameters of the diffusion model such as total charge, maximum value of current and its corresponding occurrence time. Our results show a little systematic increase of the cross section while using the double exponential law. Moreover, we showed that only two parameters of the double exponential law are actually required to investigate Single Event Upsets. Finally, we provided for the 90-nm some analytical expression in order to estimate the distribution of parameters that appear in the double exponential law. [ABSTRACT FROM PUBLISHER]

At ground level, alpha particles are a major source of soft errors. They may result from radioactive isotopes found in electronic device materials. In this paper, the materials' contributions to alpha particle-induced Soft Error Rate (SER) and MCU are evaluated for a 65 nm CMOS technology. The trend of SER on 45 and 32 nm is also reported in this paper. These evaluations are performed by Monte Carlo simulations, taking into account the radioactive impurity contamination levels in the device. [ABSTRACT FROM AUTHOR]

The PHISco simulation tool was known to be able to predict the SEU cross section for incident ions. This tool is improved in this work to also predict the MCU rate. Experimental and predicted results are shown to be in good agreement on a 90 nm bulk SRAM. The simulated SHAM structure includes the N-well, which is known to be a barrier to the charge carriers. [ABSTRACT FROM AUTHOR]

The possibility to evaluate simultaneously the total ionizing dose and the displacement damage dose using a single OSL integrated sensor is demonstrated. Results obtained during the real time monitoring of both proton and electron beams are presented. [ABSTRACT FROM AUTHOR]

This paper investigates the sensitivity of bulk technologies in the terrestrial neutron environment as a function of technology scaling. Their sensitivity is analyzed with both experiments and Monte Carlo simulations. The soft error rate (SER) of future technology generations is extrapolated, analyzed and discussed on the basis of different parameters such as the interaction volume, the secondary ion species and the incident neutron energy ranges. [ABSTRACT FROM AUTHOR]

Presents a study that developed a model to evaluate both the optimum temperature and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar junction transistors. Information on the extraction of the model parameters; Comparison between degradation and the temperature of the devices; Analysis of the effect of an ionizing environment on bipolar-junction transistors.

Presents a study that assessed the results of proton irradiation in a commercial off-the-shelf charge-coupled device (CCD). Investigation of the mean dark current of the CCD; Examination of the mean dark-current function of non-ionizing energy loss; Analysis of the appearance of dark-signal nonuniformity pixel to pixel after proton irradiation.

Focuses on a study that investigated the effect of high-temperature irradiation on commercial bipolar junction transistors for four dose rates. Experimental procedure and results; Discussion; Conclusion.

Focuses on a study that proposed a contribution to the analysis of the permanent damage effects in a commercial off-the-shelf optocoupler. Radiation effects on optocouplers; Experimental results; Analysis and discussion.

Presents information on an accelerated method of oxide-trap-level characterization used in metal oxide semiconductor devices. Basis of method; Information on the radiation-induced trapped charge within the gate and field oxides of metal oxide semiconductor (MOS) structures; Reference to the low-dose-rate effect prediction method.

This work presents an radiation hardness assurance (RHA) methodology that combines both component and system level data to predict system-level reliability, based on system instrumentation for system-level testing. The methodology is illustrated by its application to two system-on-modules based on recent generations of system-on-chips irradiated with protons. [ABSTRACT FROM AUTHOR]

The mechanisms responsible for neutron-induced single-event burnout (SEB) in commercial silicon carbide power MOSFETs under atmospheric-like neutron spectrum were investigated and analyzed. The combined effect of applied reverse gate voltage and drain voltage was evaluated. First, local analysis of the packaged device at the wafer level is performed to reveal the failure mechanism inside the semiconductor lattice. Second, based on gate stress testing of surviving devices and looking at the influence of reverse gate bias during irradiation, an enhanced failure sensitivity especially for drain voltage values close to the safe operating area was demonstrated. In addition to support this assumption, TCAD simulations with damage sites were performed in order to address physical mechanisms related to gate leakage degradation and SEB. [ABSTRACT FROM AUTHOR]

Radiation-hardening techniques can be extensively used in the design level to improve the robustness of very large-scale integration (VLSI) circuits used in space applications. Accordingly, this work analyzes the efficiency of transistor folding layout in improving the single-event transient (SET) robustness of digital circuits. Additionally, diffusion splitting is proposed to reduce the area overhead of multiple-finger designs. Besides increasing threshold linear energy transfer, results show that both techniques can also reduce the overall cross section and the in-orbit SET rate for protons and heavy ions in low-earth orbit (LEO) and international space station (ISS) orbits. [ABSTRACT FROM AUTHOR]

The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling. [ABSTRACT FROM AUTHOR]

The influence of the oxide thickness in the surface tracks formation in thin silicon dioxide layered-silicon substrate (SiO2-Si) irradiated with swift heavy ion is dealt with. In this respect, SiO2-Si samples with different oxide thicknesses have been characterized using atomic force microscopy before and after 7.51 MeV/u Xe ion irradiation at a grazing incident angle of 1° relative to the surface plane. Experimental evidence of the existence of a threshold thickness in the formation of swift heavy ion-induced surface tracks has been addressed and discussed according to the thermal spike theory. This experimental upshot can be helpful when assessing metal–oxide–semiconductor ultrathin-gate oxide reliability issues and for growth of silicon-based nanostructures. [ABSTRACT FROM AUTHOR]

The design methodology based on standard cells is widely used in a broad range of very-large-scale integration (VLSI) applications. Furthermore, several optimization algorithms can be employed to address different constraints such as power consumption or reliability. This paper evaluates the implications of the usage of complex logic cells from a 45-nm standard-cell library to the single-event transient (SET) sensitivity under heavy ions. Results show that even though a reduction in the layout area is obtained when adopting complex logic gates, a slight reduction in the total sensitive area of the circuit is observed. Moreover, the effectiveness of the logical masking can be suppressed, leading to a higher SET cross section for high particle linear energy transfer (LET). [ABSTRACT FROM AUTHOR]

In this paper, the single-event effects on a 28-nm static random access memory-based field-programmable gate array (FPGA) under CERN’s mixed-particle field are analyzed. The methodology followed for CERN electronics radiation hardness assurance and the particularities of testing an FPGA under a mixed-particle field are demonstrated. More specifically, the potential contribution of low-energy particles to the configuration memory (CRAM) and block memory (BRAM) bit upset sensitivity is investigated. By using a method of irradiating the device in different locations at CERN high-energy accelerator mixed field/facility with different particle energy spectra, it has been found that there is a significant impact of thermal neutrons, increasing the CRAM and BRAM cross section by a factor of $\times 3$. As a complement to this paper, an example application is also tested, in the context of future upgrades at the CERN accelerator complex. Results estimate that the application fails less than 10 times per year, leading to the conclusion that such devices may be used for low criticality applications along the accelerator complex. [ABSTRACT FROM AUTHOR]

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed. [ABSTRACT FROM AUTHOR]

This paper presents a comparative analysis of the single-event effect (SEE) sensitivity of Double Data Rate memories from different manufacturers. Two-photon laser testing is performed to extract technological information such as the memory array organization and an estimation of the cell size. SEE laser energy thresholds are compared as well as the impact of the applied power mode. Bitline upsets are experimentally observed and confirmed by an analysis based on Monte-Carlo simulations. Heavy-ion testing results, including various kinds of SEFIs, are presented and discussed. [ABSTRACT FROM PUBLISHER]