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171. IllustrisTNG in the HSC-SSP: Image data release and the major role of mini mergers as drivers of asymmetry and star formation

Author

Bottrell, Connor, primary, Yesuf, Hassen M, additional, Popping, Gergö, additional, Omori, Kiyoaki Christopher, additional, Tang, Shenli, additional, Ding, Xuheng, additional, Pillepich, Annalisa, additional, Nelson, Dylan, additional, Eisert, Lukas, additional, Gao, Hua, additional, Goulding, Andy D, additional, Kalita, Boris S, additional, Luo, Wentao, additional, Greene, Jenny E, additional, Shi, Jingjing, additional, and Silverman, John D, additional

Published
2023
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196. IllustrisTNG in the HSC-SSP: image data release and the major role of mini mergers as drivers of asymmetry and star formation.

Author

Bottrell, Connor, Yesuf, Hassen M, Popping, Gergö, Omori, Kiyoaki Christopher, Tang, Shenli, Ding, Xuheng, Pillepich, Annalisa, Nelson, Dylan, Eisert, Lukas, Gao, Hua, Goulding, Andy D, Kalita, Boris S, Luo, Wentao, Greene, Jenny E, Shi, Jingjing, and Silverman, John D

Subjects
MERGERS & acquisitions, STAR formation, DATA release, STELLAR mass, GALAXY mergers, RADIATIVE transfer
Abstract

At fixed galaxy stellar mass, there is a clear observational connection between structural asymmetry and offset from the star-forming main sequence, ΔSFMS. Herein, we use the TNG50 simulation to investigate the relative roles of major mergers (stellar mass ratios μ ≥ 0.25), minor (0.1 ≤ μ < 0.25), and mini mergers (0.01 ≤ μ < 0.1) in driving this connection amongst star-forming galaxies (SFGs). We use dust radiative transfer post-processing with SKIRT to make a large, public collection of synthetic Hyper Suprime-Cam Subaru Strategic Program (HSC-SSP) images of simulated IllustrisTNG (TNG) galaxies over 0.1 ≤ z ≤ 0.7 with log (M ⋆/M⊙) ≥ 9 (∼750 k images). Using their instantaneous star formation rates (SFRs), known merger histories/forecasts, and HSC-SSP asymmetries, we show (1) that TNG50 SFGs qualitatively reproduce the observed trend between ΔSFMS and asymmetry and (2) a strikingly similar trend emerges between ΔSFMS and the time-to-coalescence for mini mergers. Controlling for redshift, stellar mass, environment, and gas fraction, we show that individual mini merger events yield small enhancements in SFRs and asymmetries that are sustained on long time-scales (at least ∼3 Gyr after coalescence, on average) – in contrast to major/minor merger remnants which peak at much greater amplitudes but are consistent with controls only ∼1 Gyr after coalescence. Integrating the boosts in SFRs and asymmetries driven by μ ≥ 0.01 mergers since z  = 0.7 in TNG50 SFGs, we show that mini mergers are responsible for (i) 55 per cent of all merger-driven star formation and (ii) 70 per cent of merger-driven asymmetric structure. Due to their relative frequency and prolonged boost time-scales, mini mergers dominate over their minor and major counterparts in driving star formation and asymmetry in SFGs. [ABSTRACT FROM AUTHOR]

Published
2024
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197. Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3|4H-SiC.

Author

Liao, Michael E., Huynh, Kenny, Cheng, Zhe, Shi, Jingjing, Graham, Samuel, and Goorsky, Mark S.

Subjects
SEMICONDUCTOR wafer bonding, THERMAL conductivity, ION implantation, X-ray diffraction measurement, RECRYSTALLIZATION (Metallurgy), HETEROJUNCTIONS
Abstract

The impact of postbond annealing on the structural and thermal characteristics of 130 nm thick exfoliated (201) β-Ga2O3 (via H+ ion implantation) wafer bonded to (0001) 4H-SiC was studied. Thirty nanometer amorphous-Al2O3 was grown on the β-Ga2O3 substrates prior to bonding as an interlayer between β-Ga2O3 and 4H-SiC. The surface activated bonding technique was utilized for bonding, which induces a thin nanometer amorphous interfacial region at the bonded interface (Al2O3|4H-SiC). We demonstrate annealing the bonded structure at 800 °C up to 1 h is beneficial: (1) the removal of residual strain in the exfoliated β-Ga2O3 layer that was due to the exfoliation implant, (2) reduction of lattice mosaicity in the β-Ga2O3 layer, (3) nearly complete recrystallization of the amorphous bonded interfacial region, and (4) partial recrystallization of the initially amorphous-Al2O3 interlayer. The thermal characteristics correspondingly improve with the improvement in structural characteristics. The thermal conductivity of the as-bonded β-Ga2O3 layer was 2.9 W/m K, and the thermal boundary conductance of the bonded interface was 66 MW/m2 K. After annealing at 800 °C for 1 h, triple-axis x-ray diffraction ω:2θ measurements showed a reduction in strain for the β-Ga2O3 layer and the symmetric (201) rocking curve widths. We simultaneously observe a doubling of the β-Ga2O3 thermal conductivity to 6.0 W/m K and a 20% increase in the thermal boundary conductance. However, upon further annealing up to 10 h and fully recrystallizing both the Al2O3 interlayer and bonded interface, the thermal boundary conductance dropped by ∼30%. This preliminary result suggests that crystalline heterointerfaces may not necessarily be the most optimal interfacial structure for thermal transport. [ABSTRACT FROM AUTHOR]

Published
2023
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