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154. Room temperature Fe2+:ZnS laser

164. Specific Features of the Temperature Dependence of the Low- and Infralow-Frequency Spectra of Complex Permittivity [variant_greek_epsilon]* for the Polar Phase of Diglycine Nitrate Crystals.

165. Initial Stages of Growth of the GaN(112) Layer on a Nano-structured Si(113) Substrate.

166. The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH-H-Ar system.

171. Parameters of thulium-doped gallium nitride crystals with wurtzite structure

172. Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer.

175. L’epatite cronica da virus B: confronto degli aspetti istologici, clinici e di laboratorio in una casistica dal Sud dell’Italia

177. The bile secretion in experimental porphyria

179. 17O and 14N quadrupole coupling and the mechanism of the ferroelectric transition in diglycine nitrate

190. DISCUSSION. SITE INVESTIGATIONS INCLUDING BORING AND OTHER METHODS OF SUB-SURFACE EXPLORATION. WORKS CONSTRUCTION PAPER NO 12.

196. Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam.

197. Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate.

198. On origin of genetic code and tRNA before translation

199. One ancestor for two codes viewed from the perspective of two complementary modes of tRNA aminoacylation

200. Calculation of the Ga+ FIB Ion Dose Distribution by SEM Image.

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