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One way to unambiguously confirm the existence of particle dark matter and determine its mass would be to detect its annihilation into monochromatic gamma-rays in upcoming telescopes. One of the most minimal models for dark matter is the inert doublet model, obtained by adding another Higgs doublet with no direct coupling to fermions. For a mass between 40 and 80 GeV, the lightest of the new inert Higgs particles can give the correct cosmic abundance of cold dark matter in agreement with current observations. We show that for this scalar dark matter candidate, the annihilation signal of monochromatic \gamma\gamma and Z\gamma final states would be exceptionally strong. The energy range and rates for these gamma-ray line signals make them ideal to search for with the soon upcoming GLAST satellite., Comment: 4 pages, 3 figures; minor changes and text improvements; references updated; published version

Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc., v. 128, p. 3518-3519, 2006), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that under large biasing conditions two-phonon scattering may also become important., Comment: 20 pages, 5 figures

We present the detailed treatment of dissipative quantum transport in carbon nanotube field-effect transistors (CNTFETs) using the non-equilibrium Green's function formalism. The effect of phonon scattering on the device characteristics of CNTFETs is explored using extensive numerical simulation. Both intra-valley and inter-valley scattering mediated by acoustic (AP), optical (OP), and radial breathing mode (RBM) phonons are treated. Realistic phonon dispersion calculations are performed using force-constant methods, and electron-phonon coupling is determined through microscopic theory. Specific simulation results are presented for (16,0), (19,0), and (22,0) zigzag CNTFETs that are in the experimentally useful diameter range. We find that the effect of phonon scattering on device performance has a distinct bias dependence. Up to moderate gate biases the influence of high-energy OP scattering is suppressed, and the device current is reduced due to elastic back-scattering by AP and low-energy RBM phonons. At large gate biases the current degradation is mainly due to high-energy OP scattering. The influence of both AP and high-energy OP scattering is reduced for larger diameter tubes. The effect of RBM mode, however, is nearly independent of the diameter for the tubes studied here., Comment: 52 pages, 1 table, 9 figures

A Michigan State University policy analysis class explored migrant education in Michigan through literature reviews and interviews with policymakers, teachers, and migrant children and their families. They identified four areas that need attention. First, people who understand the learning needs of migrant students should be recruited as teachers. Teachers who have the dispositions and ability to teach Latinos and other minority groups should be selected. Quality professional development should be available to teachers and aides instructing migrant children, and these teachers and aides should have knowledge of Spanish and English as well as pedagogies that allow self-regulated learning and critical thinking without devaluing diverse cultures. Second, family-school relationships can be strengthened through a "students as ambassador program" to facilitate teacher-parent communication. Third, technologies used in schools should be evaluated for cost-effectiveness, appropriateness for migrant students, and contributions to equitable access to quality education, higher achievement rates, and lower dropout rates. Finally, the allocation of resources should be studied to see how migrant students can gain real access to school personnel and facilities, how qualified teachers and aides can be hired and developed, how students can get technology they can use and "take with them," how to develop funding formulas that are more equitable to small rural schools, and how to deliver the most help at the elementary school level. An appendix presents two articles about educational initiatives in Colombia and the Dominican Republic. (Contains 55 references.) (TD)

In this paper we demonstrate how Stromgren uvby photometry can be efficiently used to: 1. Identify red giant branch stars that are members in a dwarf spheroidal galaxy. 2. Derive age-independent metallicities for the same stars and quantify the associated errors. Stromgren uvby photometry in a 11 x 22 arcmin field centered on the Draco dwarf spheroidal galaxy was obtained using the Isaac Newton Telescope on La Palma. Members of the Draco dSph galaxy were identified using the surface gravity sensitive c_1 index which discriminates between red giant and dwarf stars. Thus enabling us to distinguish the (red giant branch) members of the dwarf spheroidal galaxy from the foreground dwarf stars in our galaxy. The method is evaluated through a comparison of our membership list with membership classifications in the literature based on radial velocities and proper motions. The metallicity sensitive m_1 index was used to derive individual and age-independent metallicities for the members of the Draco dSph galaxy. The derived metallicities are compared to studies based on high resolution spectroscopy and the agreement is found to be very good. We present metallicities for 169 members of the red giant branch in the Draco dwarf spheroidal galaxy (the largest sample to date). The metallicity distribution function for the Draco dSph galaxy shows a mean [Fe/H] = -1.74 dex with a spread of 0.24 dex. The correlation between metallicity and colour for the stars on the red giant branch is consistent with a dominant old, and coeval population. There is a possible spatial population gradient over the field with the most metal-rich stars being more centrally concentrated than the metal-poor stars., Comment: Accepted for publication in A&A. 26 pages, 27 figures (some at reduced resolution). High resolution version available at http://www.astro.lu.se/~daniel/draco/faria.ps

We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured performance of the device with the effects of series resistance removed to the simulated result assuming ballistic transport shows that the experimental device operates between 60 to 85% of the ballistic limit. For this ~15 nm diameter Ge nanowire, we also find that 14-18 modes are occupied at room temperature under ON-current conditions with ION/IOFF=100. To observe true one dimensional transport in a <110> Ge nanowire transistor, the nanowire diameter would have to be much less than about 5 nm. The methodology described here should prove useful for analyzing and comparing on common basis nanowire transistors of various materials and structures.

We aim to provide engineers with an introduction to the non-equilibrium Green's function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method to treat small electronic devices quantum mechanically and atomistically. We first review the basis for the traditional, semiclassical description of carriers that has served device engineers for more than 50 years. We then describe why this traditional approach loses validity at the nanoscale. Next, we describe semiclassical ballistic transport and the Landauer-Buttiker approach to phase coherent quantum transport. Realistic devices include interactions that break quantum mechanical phase and also cause energy relaxation. As a result, transport in nanodevices are between diffusive and phase coherent. We introduce the non equilbrium Green's function (NEGF) approach, which can be used to model devices all the way from ballistic to diffusive limits. This is followed by a summary of equations that are used to model a large class of layered structures such as nanotransistors, carbon nanotubes and nanowires. An application of the NEGF method in the ballistic and scattering limits to silicon nanotransistors is discussed., Comment: 42 pages, 23 figures, Matlab code in appendix; revised version with corrected references

We derive expressions for the coupling coefficients for electromagnetic four-wave mixing in the non-linear quantum vacuum. An experimental setup for detection of elastic photon-photon scattering is suggested, where three incoming laser pulses collide and generate a fourth wave with a new frequency and direction of propagation. An expression for the number of scattered photons is derived and, using beam parameters for the Astra Gemini system at the Rutherford Appleton Laboratory, it is found that the signal can reach detectable levels. Problems with shot-to-shot reproducibility are reviewed, and the magnitude of the noise arising from competing scattering processes is estimated. It is found that detection of elastic photon-photon scattering may for the first time be achieved., Comment: 11 pages, 6 figures, to appear in Physical Review A

The role of self-heating and hot-phonons on electronic transport in metallic single walled carbon nanotube is examined by solving a coupled electron-optical phonon (OP) Boltzmann transport equation and the classical heat equation. We find that self-heating reduces the high bias conductance, thus explaining the short OP mean free paths observed experimentally, while the non-equilibrium OP population reduces the overall current level. Comparison with experimental data shows that for tubes on a substrate, no significant population of hot phonons builds up under the normal range of applied bias. These results shed light on OP phonon decay paths in carbon nanotubes.

According to the theory of quantum electrodynamics, photon-photon scattering can take place via exchange of virtual electron-positron pairs. Effectively, the interaction can be formulated in terms of non-linear corrections to Maxwell's equations, and hence may be treated by classical non-linear electrodynamics. Due to the strong electromagnetic fields needed to reach any noticeable effect, photon-photon scattering has not yet been observed experimentally, but recent improvements in laser technology have increased the possibility of direct detection. A verification of the phenomena would be of great scientific value as a confirmation of quantum electrodynamics. In this thesis the possibility of direct detection of elastic photon-photon scattering through four-wave coupling is investigated, both for current and future systems. It is shown how three colliding laser pulses satisfying certain matching conditions, can generate scattered radiation in a fourth resonant direction. The interaction is modeled, and the number of scattered photons is estimated for optimized configurations of incoming pulses, both for the Vulcan laser at the Rutherford Appleton Laboratory as well as for the planned XFEL at DESY. An experiment using the Vulcan laser is predicted to produce 22 scattered photons per shot, an amount which is definitely detectable. The usefulness of the XFEL highly depends on future developments in laser technology, but a realistic estimation gives a result of 30000 scattered photons per second., Comment: MSc thesis. 70 pages, 8 figures. Including appendix with the geometric factors referred to in hep-ph/0510076

We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. It means that elastic scattering mechanisms are most detrimental to nanotube MOSFETs. (ii) For comparable mean free paths, a lower phonon energy leads to a larger degradation of drive current. Thus for semiconducting nanowire FETs, the drive current will be more sensitive than carbon nanotube FETs because of the smaller phonon energies in semiconductors. (iii) Radial breathing mode phonons cause an appreciable reduction in drive current., Comment: 16 pages, 1 table, 4 figures

The properties of four-wave interaction via the nonlinear quantum vacuum is investigated. The effect of the quantum vacuum is to generate photons with new frequencies and wave vectors, due to elastic photon-photon scattering. An expression for the number of generated photons is derived and using state-of-the-art laser data it is found that the number of photons can reach detectable levels. In particular, the prospect of using the high repetition Astra Gemini system at the Rutherford Appleton Laboratory is discussed. The problem of noise sources is reviewed, and it is found that the noise level can be reduced well below the signal level. Thus, detection of elastic photon-photon scattering may for the first time be achieved., Comment: 4 pages, 3 figures (color), to appear in Physical Review Letters

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering., Comment: 13 pages, 4 figures

In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic structure of the Si/SiO2 interface roughness directly by using a 3D finite element technique. The results show that 1) SRS reduces the electron density of states in the channel, which increases the SNWT threshold voltage, and 2) the SRS in SNWTs becomes more effective when more propagating modes are occupied, which implies that SRS is more important in planar metal-oxide-semiconductor field-effect-transistors with many transverse modes occupied than in small-diameter SNWTs with few modes conducting., Comment: 13 pages, 4 figures

This paper examines the validity of the widely-used parabolic effective-mass approximation for computing the current-voltage (I-V) characteristics of silicon nanowire transistors (SNWTs). The energy dispersion relations for unrelaxed Si nanowires are first computed by using an sp3d5s* tight-binding model. A semi-numerical ballistic FET model is then adopted to evaluate the I-V characteristics of the (n-type) SNWTs based on both a tight-binding dispersion relation and parabolic energy bands. In comparison with the tight-binding approach, the parabolic effective-mass model with bulk effective-masses significantly overestimates SNWT threshold voltages when the wire width is <3nm, and ON-currents when the wire width is <5nm. By introducing two analytical equations with two tuning parameters, however, the effective-mass approximation can well reproduce the tight-binding I-V results even at a \~1.36nm wire with., Comment: 23 pages, 9 figures

In this work, we present a quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors (SNWTs). The simulation domain is discretized with a three-dimensional (3D) finite element mesh, and the microscopic structure of the Si/SiO2 interface roughness is directly implemented. The 3D Schrodinger equation with open boundary conditions is solved by the non-equilibrium Green's function method together with the coupled mode space approach. The 3D electrostatics in the device is rigorously treated by solving a 3D Poisson equation with the finite element method. Although we mainly focus on computational techniques in this paper, the physics of SRS in SNWTs and its impact on the device characteristics are also briefly discussed., Comment: 4 pages, 2 figures

In this letter, we explore the bandstructure effects on the performance of ballistic silicon nanowire transistors (SNWTs). The energy dispersion relations for silicon nanowires are evaluated with an sp3d5s* tight binding model. Based on the calculated dispersion relations, the ballistic currents for both n-type and p-type SNWTs are evaluated by using a semi-numerical ballistic model. For large diameter nanowires, we find that the ballistic p-SNWT delivers half the ON-current of a ballistic n-SNWT. For small diameters, however, the ON-current of the p-type SNWT approaches that of its n-type counterpart. Finally, the carrier injection velocity for SNWTs is compared with those for planar metal-oxide-semiconductor field-effect transistors, clearly demonstrating the impact of quantum confinement on the performance limits of SNWTs., Comment: 12 pages, 4 figures

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained., Comment: Nano Letters, in press

The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation approach to treat various SNWTs within the effective-mass approximation. We begin by assuming ballistic transport, which gives the upper performance limit of the devices. The use of a mode space approach (either coupled or uncoupled) produces high computational efficiency that makes our 3D quantum simulator practical for extensive device simulation and design. Scattering in SNWTs is then treated by a simple model that uses so-called Buttiker probes, which was previously used in metal-oxide-semiconductor field effect transistor (MOSFET) simulations. Using this simple approach, the effects of scattering on both internal device characteristics and terminal currents can be examined, which enables our simulator to be used for the exploration of realistic performance limits of SNWTs., Comment: 38 pages, 11 figures, submitted to Journal of Applied Physics

The general theory for quantum simulation of cubic semiconductor n-MOSFETs is presented within the effective mass equation approach. The full three-dimensional transport problem is described in terms of coupled transverse subband modes which arise due to quantum confinement along the body thickness direction. Couplings among the subbands are generated for two reasons: due to spatial variations of the confinement potential along the transport direction, and due to non-alignment of the device coordinate system with the principal axes of the constant energy conduction band ellipsoids. The problem simplifies considerably if the electrostatic potential is separable along transport and confinement directions, and further if the potential variations along the transport direction are slow enough to prevent dipolar coupling (Zener tunneling) between subbands. In this limit, the transport problem can be solved by employing two unitary operators to transform an arbitrarily oriented constant energy ellipsoid into a regular ellipsoid with principal axes along the transport, width and confinement directions of the device. The effective masses for several technologically important wafer orientations for silicon and germanium are calculated in this paper.

A sample of 229 nearby thick disk stars has been used to investigate the existence of an age-metallicity relation (AMR) in the Galactic thick disk. The results indicate that that there is indeed an age-metallicity relation present in the thick disk. By dividing the stellar sample into sub-groups, separated by 0.1 dex in metallicity, we show that the median age decreases by about 5-7 Gyr when going from [Fe/H]=-0.8 to [Fe/H]=-0.1. Combining our results with our newly published alpha-element trends for a local sample of thick disk stars, that show signatures from supernovae type Ia (SNIa), we can here draw the conclusion that the time-scale for the peak of the SNIa rate is of the order 3-4 Gyr in the thick disk. The tentative evidence for a thick disk AMR that we present here also has implications for the thick disk formation scenario; star-formation must have been an ongoing process for several billion years. This is further discussed here and appear to strengthen the hypothesis that the thick disk originates from a merger event with a companion galaxy that puffed up a pre-existing thin disk., Comment: Accepted for publication in A&A, 8 pages

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that hierarchy, the simulation of ballistic CNTFETs by self-consistently solving the Poisson and Schrodinger equations using the non-equilibrium Greens function (NEGF) formalism. The NEGF transport equation is solved at two levels: i) a semi-empirical atomistic level using the pz orbitals of carbon atoms as the basis, and ii) an atomistic mode space approach, which only treats a few subbands in the tube-circumferential direction while retaining an atomistic grid along the carrier transport direction. Simulation examples show that these approaches describe quantum transport effects in nanotube transistors. The paper concludes with a brief discussion of how these semi-empirical device level simulations can be connected to ab initio, continuum, and circuit level simulations in the multi-scale hierarchy.

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with metal source/drain, or devices commonly referred to as Schottky barrier FETs.

We present oxygen abundances for 72 F and G dwarf stars in the solar neighbourhood. Using the kinematics of the stars we divide them into two sub-samples with space velocities that are typical for the thick and thin disks, respectively. The metallicities of the stars range from [Fe/H] = -0.9 to +0.4 and we use the derived oxygen abundances of the stars to: (1) perform a differential study of the oxygen trends in the thin and the thick disk; (2) to follow the trend of oxygen in the thin disk to the highest metallicities. We analyze the forbidden oxygen lines at 6300 {\AA} and 6363 {\AA} as well as the (NLTE afflicted) triplet lines around 7774 {\AA}. For the forbidden line at 6300 A we have spectra of very high S/N (>400) and resolution (R=215 000). This has enabled a very accurate modeling of the oxygen line and the blending Ni lines. The high internal accuracy in our determination of the oxygen abundances from this line is reflected in the very tight trends we find for oxygen relative to iron........, Comment: Accepted for publication in A&A, 16 pages

We present multiwavelength observations of a gamma-ray burst detected by INTEGRAL (GRB 030227) between 5.3 hours and ~1.7 days after the event. Here we report the discovery of a dim optical afterglow (OA) that would not have been detected by many previous searches due to its faintess (R~23). This OA was seen to decline following a power law decay with index Alpha_R= -0.95 +/- 0.16. The spectral index Beta_opt/NIR yielded -1.25 +/- 0.14. These values may be explained by a relativistic expansion of a fireball (with p = 2.0) in the cooling regime. We also find evidence for inverse Compton scattering in X-rays., Comment: 5 pages, 5 figures, accepted for publication in A&A

Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean free path (mfp) for acoustic phonon scattering is estimated to be lap~300 nm, and that for optical phonon scattering is lop~15 nm. Transport through very short (~10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasi-ballistic at the low and high bias voltage limits respectively. High currents of up to 70 uA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects., Comment: 4 figures. PRL, in press

Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when the Schottky barrier for electrons (or for holes) is zero. The resulting leakage current, which increases exponentially with the drain voltage, constrains the potential applications of such devices. In this paper, we use numerical simulations to show that if CNT based metal-oxide-semiconductor (MOS) FETs can be achieved by using heavily doped CNT sections as source and drain, ambipolar conduction will be suppressed, leakage current will be reduced, and the scaling limit imposed by source-drain tunneling will be extended. By eliminating the Schottky barrier between the source and channel, the transistor will be capable of delivering more on-current. The leakage current of such devices will be controlled by the full bandgap of CNTs (instead of half of the bandgap for SB CNTFETs) and band-to-band tunneling. These factors will depend on the diameter of nanotubes and the power supply voltage., Comment: 5 figures

We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be carefully considered in device design, especially when the gate oxide is thin. The channel length scaling limit imposed by source-drain tunneling is found to be between 5nm and 10nm, depending on the off-current specification. Using a large diameter tube increases the on-current, but it also increases the leakage current. Our study of gate dielectric scaling shows that the charge on the nanotube can play an important role above threshold., Comment: 26 pages, 8 figures

First results from a study into the abundance trends of oxygen in the Galactic thin and thick disks are presented. Oxygen abundances for 21 thick disk and 42 thin disk F and G dwarf stars based on very high resolution spectra (R\sim 215000) and high signal-to-noise (S/N>400) of the faint forbidden oxygen line at 6300 A have been determined. We find that [O/Fe] for the thick disk stars show a turn-down, i.e. the ``knee'', at [Fe/H] between -0.4 and -0.3 dex indicating the onset of SNe type Ia. The thin disk stars on the other hand show a shallow decrease going from [Fe/H] \sim -0.7 to the highest metallicities with no apparent ``knee'' present indicating a slower star formation history., Comment: To be published in "CNO in the Universe", ASP Conference Series, C. Charbonnel, D. Schaerer & G. Meynet (eds.)

We present the first results of a larger study into the stellar abundances and chemical trends in long-lived dwarf stars in the solar neighbourhood that belong to (based on their kinematics) the thin and thick galactic disk, respectively. We confirm that the trends of alpha-elements in the thin and thick disk are distinct (this has previously been shown for Mg by Fuhrmann 1998, but e.g. Chen et al. 2000 claimed the trends to follow smoothly upon each other). We find that the thick disk show the typical signature of contribution from SN Ia (i.e. the ``knee'') to the enrichment of the interstellar gas out of which the later generations of thick disk stars formed. The trend starts out as [Mg/Fe] ~0.35 at [Fe/H] ~ -0.7 and continue on this level with increasing [Fe/H] until -0.4 dex where a decline in [Mg/Fe] starts and steadily continues down to 0 dex at solar metallicity. The same is true for the other alpha-elements (e.g. Si). Using ages from the literature we find that the thick disk in the mean is older than the thin disk. Combining our results with other observational facts we suggest that the most likely formation scenario for the thick disk is, still, a violent merger event. We also suggest that there might be tentativeevidence for diffusion of orbits in todays thin disk (based on kinematics in combination with elemental abundances)., Comment: 4 pages, 3 figures, A&A Letter in press