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We demonstrate the anti-reflection properties of lithographically defined subwavelength gratings applied to the facets of integrated waveguides realized in the InP membrane-on-silicon platform. The subwavelength gratings are based on the gradient index effect to create a smooth index transition between the core material and air, making it possible to obtain reflections below -30 d B at a wavelength of 1550 nm for both TE and TM polarized modes, as shown by 3D finite-difference time-domain simulations. Characterizations performed using Mach-Zehnder interferometers as test structures show relative reflections as low as -25 d B , confirming the effectiveness of the technique.

We report the achievement of colliding pulse mode-locked (CPM) regimes on a novel on-chip mode locked laser diode (OCCP-MLLD). The advantage of the resonator structure that we present is that the end-mirrors are defined through multimode interference reflectors (MIRs), which provide precise control of the cavity length avoiding the need for cleaved facets. This simplifies positioning the saturable absorber at the center of the resonator to achieve the colliding pulse mode-locked regime and double the repetition rate, reaching the millimeter wave frequency range. An additional advantage is that the pulsed output is delivered within the Photonic Integrated Circuit chip for further processing (i.e. modulation). We demonstrate a colliding pulse passive mode locked regime with pulse widths below a picosecond (Δτ = 0.64 ps), timing jitter σ T = 75 fs and amplitude noise N AM = 0.012 dBc. The samples were fabricated in a generic InP foundry service through multi-project wafer (MPW) runs.

We report on an integrated approach to obtain multiwavelength emission from semiconductor ring lasers with filtered optical feedback. The filtered feedback is realized on-chip employing two arrayed-waveguide gratings to split/recombine light into different wavelength channels. Through experimental observations and numerical simulations, we find that the effective gain of the different modes is the key parameter which has to be balanced in order to achieve multiwavelength emission. This can be achieved by tuning the injection current in each amplifier.

We present a new, integrated all-optical multiplexer for wavelength grooming of many WDM channels into a single TDM channel. The chips were realized in a novel generic InP foundry process. For design and mask layout of the multiplexer circuits, we developed a simple equivalent circuit, representing the incorporated wavelength converter. With the chips realized, successful WDM to TDM transmultiplexing is demonstrated, as well as multiplexing of clock and NRZ data.

The use of the postprocessing method consisting of bitwise Exclusive-OR and least significant bits extraction to generate random bit sequences typically requires two distinct chaotic outputs. While the two signals are, in general, generated using two separated devices, e.g. two Fabry-Perot lasers, a single semiconductor ring laser can be used as an alternative due to its circular symmetry which facilitates lasing in two counterpropagating mode directions. We consider a chaotic semiconductor ring laser and investigate both numerically and experimentally its characteristics for fast random bit generation. In particular, we show that by sampling each directional mode's output signal using a 8-bit analog-digital converter and through Exclusive-OR operation applied to the two resulting signals (after throwing away 4 most significant bits), we can achieve fast random bit-streams with a bit rate 4 × 10 = 40 Gbit/s, passing the statistical randomness tests. To optimize the system performance, we also study the dependence of randomness on the main system parameters and on noise.