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153. Impact of El-Niño Event on Seasonal and Annual Rainfall over Odisha State.

155. Status and outlook of STT-MRAM development

157. Hourglass concept for RRAM: A dynamic and statistical device model

158. Field-driven ultrafast sub-ns programming in WAl 2O 3TiCuTe-based 1T1R CBRAM system

159. Middleware Platform Management Based on Portable Interceptors

160. Evaluation of constrained mobility for programmability in network management

161. (Invited) Optimization of WAl2O3Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells

162. Performance and reliability of Ultra-Thin HfO2-based RRAM (UTO-RRAM)

163. Intrinsic switching variability in HfO2 RRAM

165. Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories

168. Reliability of low current filamentary HfO2 RRAM discussed in the framework of the hourglass SET/RESET model

170. Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

171. Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system

176. Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory

177. Investigation of Forming and Its Controllability in Novel HfO2-Based 1T1R 40nm-Crossbar RRAM Cells

178. Novel Bi-Layer Poly-Silicon Channel Vertical Flash Cell for Ultrahigh Density 3D SONOS NAND Technology

179. Characterization Of Nanodevices By STEM Tomography

180. A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology

192. A novel cell arrangement enabling Trench DRAM scaling to 40nm and beyond

198. Characterization Of Nanodevices By STEM Tomography.

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