151. Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposure
- Author
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Khorsand, A.R., Sobierajski, R., Louis, E., Bruijn, S., Van Hattum, E.D., Vande Kruijs, R.W.E., Jurek, M., Klinger, D., Pelka, J.B., Juha, L., Burian, T., Chalupsky, J., Cihelka, J., Hajkova, V., Vysin, L., Jastrow, U., Stojanovic, Nenad, Toleikis, S., Wabnitz, H., Tiedtke, K., Sokolowski-Tinten, Klaus, Shymanovich, Uladzimir, Krzywinski, J., Riege Hau, S., London, R., Gleeson, A., Gullikson, E.M., Bijkerk, F., van de Kruijs, R. W. E., Hau-Riege, S., Faculty of Science and Technology, XUV Optics, and Laser Physics & Nonlinear Optics
- Subjects
Silicon ,Materials science ,Ultraviolet Rays ,chemistry.chemical_element ,law.invention ,Optics ,Optical microscope ,law ,Materials Testing ,Thin film ,Reflectometry ,Molybdenum ,business.industry ,Optical Devices ,Membranes, Artificial ,Equipment Design ,Nanosecond ,Physik (inkl. Astronomie) ,Laser ,Atomic and Molecular Physics, and Optics ,Equipment Failure Analysis ,chemistry ,Extreme ultraviolet ,business ,Ultrashort pulse - Abstract
We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and "post-mortem" by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources. (C)2010 Optical Society of America
- Published
- 2010