151. Forming laterally structured heterojunction with FAPbI3 film for improving performance of MAPbBr3 photodetectors.
- Author
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Zhang, Minmin, Lifang, Wu, Gong, Shunfa, Han, Qiuju, and Wu, Wenzhi
- Subjects
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PHOTODETECTORS , *SINGLE crystals , *ELECTRIC fields , *HETEROJUNCTIONS - Abstract
MAPbBr 3 single crystal is coated with FAPbI 3 film through the half-cladding method, which forms the laterally structured heterojunction. In comparison with pure MAPbBr 3 single crystal, the optoelectronic properties of the heterojunction exhibit a rare dual narrowband detection characteristic located at excitonic absorption of respective MAPbBr 3 and FAPbI 3 due to the different penetration depth of light photodetection. In addition, as the applied bias voltage decreases, the charge collection efficiency at the shorter wavelength range also decreases. The self-power characteristics of the device can be attributed to the existence of the built-in electric field in the heterojunction, achieving a detectivity of 5.38 × 1012 Jones for red light at 0 V. And the fast response time without an external electric field is 6.6 × 10−2 s, which is much shorter than the reported MAPbI 3 /MAPbBr 3 heterojunction photodetector. Our results pave the way for the simple synthesis of MAPbBr 3 /FAPbI 3 heterojunction and their applications in photodiode and a high-performance photodetector with a fast response. [Display omitted] • First reported MAPbBr 3 single crystal coated with FAPbI3 film forms the laterally structured heterojunction. • a rare dual narrowband detection characteristic located at excitonic absorption of respective MAPbBr 3 and FAPbI 3. • Response time without an external electric field is 6.6 × 10−2 s. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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